JPH0361278B2 - - Google Patents

Info

Publication number
JPH0361278B2
JPH0361278B2 JP56204820A JP20482081A JPH0361278B2 JP H0361278 B2 JPH0361278 B2 JP H0361278B2 JP 56204820 A JP56204820 A JP 56204820A JP 20482081 A JP20482081 A JP 20482081A JP H0361278 B2 JPH0361278 B2 JP H0361278B2
Authority
JP
Japan
Prior art keywords
clock
transistor
pair
cross
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56204820A
Other languages
Japanese (ja)
Other versions
JPS58108089A (en
Inventor
Masaki Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56204820A priority Critical patent/JPS58108089A/en
Publication of JPS58108089A publication Critical patent/JPS58108089A/en
Publication of JPH0361278B2 publication Critical patent/JPH0361278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type

Landscapes

  • Static Random-Access Memory (AREA)

Description

【発明の詳細な説明】 本発明は集積化され差電圧を検知する検知増幅
回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an integrated sense amplifier circuit for sensing differential voltages.

従来の容量性結合で昇圧を行うフリツプフロツ
プ型の検知増幅回路を第1図a,bに示す。この
回路はフリツプ・フロツプを構成するトランジス
タ1及び2と、入力をサンプリングするトランス
フア・ゲート3及び4と、衰圧用の集積化容量素
子5,6と、放電用トランジスタ7とを備え、ク
ロツクφ1で入力信号電圧をサンプリングし、ク
ロツクφpの立上りで容量性結合により昇圧する
と同時にトランジスタ7を導通し、フリツプ・フ
ロツプを活性化し、節点A,Bから任意の出力回
路に出力電圧を出力する。この様な駆動方法では
昇圧時に容量素子の非対称性により昇圧量の差が
発生し、感度を劣化させるとともに、昇圧と同時
にコモンソース点に向つて急速に放電が行なわれ
ることも感度を劣化させる等の欠点があつた。フ
リツプフロツプ型増幅回路の感度は放電速度が遅
い程、高感度となることはよく知られている。
A conventional flip-flop type sense amplifier circuit that boosts voltage by capacitive coupling is shown in FIGS. 1a and 1b. This circuit includes transistors 1 and 2 constituting a flip-flop, transfer gates 3 and 4 for sampling the input, integrated capacitive elements 5 and 6 for voltage reduction, and a discharge transistor 7. 1 samples the input signal voltage, and at the rising edge of clock φ p , boosts the voltage through capacitive coupling, simultaneously turns on transistor 7, activates the flip-flop, and outputs the output voltage from nodes A and B to any output circuit. . In such a driving method, a difference in boost amount occurs due to the asymmetry of the capacitive element when boosting the voltage, which degrades sensitivity. At the same time, rapid discharge toward the common source point occurs at the same time as boosting, which also degrades sensitivity. There were some shortcomings. It is well known that the sensitivity of a flip-flop type amplifier circuit becomes higher as the discharge rate becomes slower.

本発明の目的は、この様な従来の欠点を除去
し、低入力オフセツト電圧を可能とする検知増幅
回路を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a sense amplifier circuit which eliminates these conventional drawbacks and allows a low input offset voltage.

本発明の検知増幅回路は、少くともドレインと
ゲートを交差結合し、ソースを共通接続したトラ
ンジスタ対と、それぞれ一方を入力端子に接続
し、他方を前記交差結合したドレインあるいはゲ
ートに接続した1対のトランスフア・ゲートと、
前記交差結合した結合点のそれぞれに一端を接続
し、他端を共通接続した集積化容量素子対と、前
記トランジスタ対の共通ソース点を放電する第1
及び第2のトランジスタとを備え、前記トランス
フア・ゲートを第1のクロツクで駆動し、前記第
1のクロツクを低レベルとした後、前記第1の放
電用トランジスタを第2のクロツクを高レベルと
して導通した後、前記集積化容量素子対の共通接
続端子と前記第2の放電用トランジスタに第3の
クロツクの立上り信号を印加することを特徴とす
る。
The sense amplifier circuit of the present invention includes at least a pair of transistors whose drains and gates are cross-coupled and whose sources are commonly connected, and a pair of transistors whose respective one is connected to an input terminal and the other is connected to the cross-coupled drain or gate. transfer gate,
a pair of integrated capacitor elements having one end connected to each of the cross-coupled coupling points and the other end commonly connected; and a first transistor discharging a common source point of the transistor pair;
and a second transistor, the transfer gate is driven by a first clock, and after the first clock is set to a low level, the first discharging transistor is driven by a second clock set to a high level. The third clock rising signal is applied to the common connection terminal of the integrated capacitive element pair and the second discharge transistor after the integrated capacitive element pair becomes conductive.

以下、本発明について実施例を示す図面を参照
して説明する。第2図a,bは本発明の一実施例
を示す回路図及びクロツク・タイミング図であ
る。トランジスタ1及び2はドレインとゲートを
交差結合し、ソースを共通接続する。トランスフ
アゲート3,4はそれぞれ一方を入力端子INあ
るいはに接続し、他方を前記交差結合点に接
続する。集積化容量素子対5,6はそれぞれ1端
を前記交差結合点に接続し、他端を共通接続す
る。トランジスタ7,8は共通ソース点を放電す
る様接続する。駆動方法は先ずクロツクφ1をト
ランスフアゲート3,4のゲート電極に印加し、
入力をサンプリングする。次にクロツクφ2を放
電用トランジスタ7のゲート電極に印加し、フリ
ツプ・フロツプを活性化し、初期増幅を行う。次
にクロツクφ3を放電用トランジスタ8のゲート
電極と集積化容量素子の共通接続端子に印加し、
クロツクの立上りで節点A,Bを昇圧すると同時
に、トランジスタ8を導通し、放電を加速し、更
に増幅を行ない、低電圧側を接地電位まで放電す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to drawings showing embodiments. 2a and 2b are circuit diagrams and clock timing diagrams showing one embodiment of the present invention. Transistors 1 and 2 have their drains and gates cross-coupled, and their sources commonly connected. The transfer gates 3 and 4 each have one end connected to the input terminal IN or the other end connected to the cross-coupling point. The integrated capacitive element pairs 5 and 6 each have one end connected to the cross-coupling point and the other ends commonly connected. Transistors 7 and 8 are connected to discharge a common source point. The driving method is to first apply clock φ1 to the gate electrodes of transfer gates 3 and 4,
Sample the input. Next, the clock φ2 is applied to the gate electrode of the discharge transistor 7 to activate the flip-flop and perform initial amplification. Next, a clock φ 3 is applied to the gate electrode of the discharge transistor 8 and the common connection terminal of the integrated capacitor element,
At the rising edge of the clock, nodes A and B are boosted, and at the same time transistor 8 is made conductive, discharge is accelerated, further amplification is performed, and the low voltage side is discharged to ground potential.

以上の説明はnチヤネルMOS回路で行なつた
が、本発明はこれに限定されるものではなく、P
チヤネルMOS回路でも良く、その時はクロツク
の極性は逆になる。またクロツク波形は簡単化の
為理想化して表現したが、パルス幅は回路定数に
より決まるもので固定した値ではない。パルス電
圧値は一例として、低レベルが0V,高レベルが
電源電圧となる様にすれば良いが、これに限定さ
れるものではなく、トランジスタを導通,非導通
に制御できるレベルであれば良い。クロツクの相
互関係は、φ1とφ2については重畳することなく
φ1が低レベルとなつてから、φ2が立上がる様に
し、φ2とφ3についてはφ2立上つた後、φ3が立上
がる様にする。またクロツクφ2,φ3の立上がり
時間は遅い程、低入力オフセツト電圧となること
はよく知られている。
Although the above explanation was made using an n-channel MOS circuit, the present invention is not limited to this.
A channel MOS circuit may also be used, in which case the polarity of the clock will be reversed. Furthermore, although the clock waveform is idealized for simplicity, the pulse width is determined by the circuit constants and is not a fixed value. For example, the pulse voltage value may be such that the low level is 0V and the high level is the power supply voltage, but it is not limited to this, and any level that can control the transistor to be conductive or nonconductive may be used. The mutual relationship between the clocks is such that φ 1 and φ 2 do not overlap and φ 2 rises after φ 1 goes to a low level, and φ 2 and φ 3 rise after φ 2 rises. 3 will stand up. It is also well known that the slower the rise time of the clocks φ 2 and φ 3 , the lower the input offset voltage will be.

本発明による検知増幅回路を用いれば、初期増
幅で節点電圧差は充分に増幅されるので、集積化
容量素子のバラツキにより、昇圧時に低電圧側が
高く、高電圧側が低く昇圧されてもフリツプ・フ
ロツプが反転することはない。また昇圧するとゲ
ート・ソース間の電圧が大きくなり、節点は急速
に放電するが初期増幅しているので反転動作する
ことはない。
If the detection amplifier circuit according to the present invention is used, the node voltage difference is sufficiently amplified in the initial amplification, so even if the low voltage side is high and the high voltage side is low due to variations in the integrated capacitance elements, the flip-flop is never reversed. Also, when boosting the voltage, the voltage between the gate and the source increases, and the node rapidly discharges, but since the node is initially amplified, there is no inversion operation.

本発明は以上説明した様に容量結合で昇圧する
フリツプフロツプ型増幅回路に於て、初期増幅を
行なつた後、昇圧増幅する様なタイミングで駆動
することにより回路定数の非対称性による入力オ
フセツト電圧を小さくできる。
As explained above, in a flip-flop type amplifier circuit that boosts voltage through capacitive coupling, the present invention reduces the input offset voltage due to the asymmetry of the circuit constants by driving at a timing that boosts the voltage after initial amplification. Can be made smaller.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,bは従来の検知増幅回路の回路図及
びそのクロツク・タイミング図である。第2図
a,bは本発明の一実施例の回路図とクロツク・
タイミングである。 1,2……交差結合トランジスタ、3,4……
入力トランスフア・ゲート、5,6……集積化容
量素子、7,8……放電用トランジスタ。
FIGS. 1a and 1b are a circuit diagram of a conventional sense amplifier circuit and its clock timing diagram. Figures 2a and 2b are a circuit diagram and a clock diagram of an embodiment of the present invention.
It's the timing. 1, 2...Cross-coupled transistor, 3, 4...
Input transfer gate, 5, 6... integrated capacitive element, 7, 8... discharge transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 少くともドレインとゲートを交差結合し、ソ
ースを共通接続したトランジスタ対と、それぞれ
一方を入力端子に接続し、他方を前記交差結合し
たドレインあるいはゲートに接続した1対のトラ
ンスフア・ゲートと、前記交差結合した結合点の
それぞれに一端を接続し、他端を共通接続した集
積化容量素子対と、前記トランジスタ対の共通ソ
ース点を放電する第1及び第2のトランジスタと
を備え、前記トランスフア・ゲートを第1のクロ
ツクで駆動し、前記第1のクロツクを低レベルと
した後、前記第1の放電用トランジスタを第2の
クロツクを高レベルとして導通した後、前記集積
化容量素子対の共通接続端子と前記第2の放電用
トランジスタに第3のクロツクの立上り信号を印
加することを特徴とする検知増幅回路。
1. A pair of transistors whose drains and gates are cross-coupled at least, and whose sources are commonly connected; and a pair of transfer gates, each of which has one connected to an input terminal and the other connected to the cross-coupled drain or gate; A pair of integrated capacitive elements having one end connected to each of the cross-coupled coupling points and the other end commonly connected, and first and second transistors discharging a common source point of the transistor pair, After driving the first clock with the first clock and setting the first clock to a low level, the first discharging transistor is turned on by setting the second clock to a high level, and then the integrated capacitive element pair is turned on. 2. A detection amplification circuit characterized in that a rising signal of a third clock is applied to a common connection terminal of the transistor and the second discharge transistor.
JP56204820A 1981-12-18 1981-12-18 Detecting and amplifying circuit Granted JPS58108089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204820A JPS58108089A (en) 1981-12-18 1981-12-18 Detecting and amplifying circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204820A JPS58108089A (en) 1981-12-18 1981-12-18 Detecting and amplifying circuit

Publications (2)

Publication Number Publication Date
JPS58108089A JPS58108089A (en) 1983-06-28
JPH0361278B2 true JPH0361278B2 (en) 1991-09-19

Family

ID=16496918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204820A Granted JPS58108089A (en) 1981-12-18 1981-12-18 Detecting and amplifying circuit

Country Status (1)

Country Link
JP (1) JPS58108089A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0265572A1 (en) * 1986-10-29 1988-05-04 International Business Machines Corporation High signal sensitivity high speed receiver in CMOS technology
US5297097A (en) 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation

Also Published As

Publication number Publication date
JPS58108089A (en) 1983-06-28

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