JPH0359833A - Optical disk substrate - Google Patents
Optical disk substrateInfo
- Publication number
- JPH0359833A JPH0359833A JP1195963A JP19596389A JPH0359833A JP H0359833 A JPH0359833 A JP H0359833A JP 1195963 A JP1195963 A JP 1195963A JP 19596389 A JP19596389 A JP 19596389A JP H0359833 A JPH0359833 A JP H0359833A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- water
- acid mixture
- contact angle
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000013032 Hydrocarbon resin Substances 0.000 claims abstract description 9
- 229920006270 hydrocarbon resin Polymers 0.000 claims abstract description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- KPVWDKBJLIDKEP-UHFFFAOYSA-L dihydroxy(dioxo)chromium;sulfuric acid Chemical compound OS(O)(=O)=O.O[Cr](O)(=O)=O KPVWDKBJLIDKEP-UHFFFAOYSA-L 0.000 claims description 8
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims description 4
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 description 26
- 229920005989 resin Polymers 0.000 description 26
- 229920000642 polymer Polymers 0.000 description 18
- -1 TbFe Chemical class 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 229920002554 vinyl polymer Polymers 0.000 description 12
- 238000005984 hydrogenation reaction Methods 0.000 description 11
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 10
- 239000012760 heat stabilizer Substances 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229920001400 block copolymer Polymers 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 150000005675 cyclic monoalkenes Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 241000219095 Vitis Species 0.000 description 2
- 235000009754 Vitis X bourquina Nutrition 0.000 description 2
- 235000012333 Vitis X labruscana Nutrition 0.000 description 2
- 235000014787 Vitis vinifera Nutrition 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000001993 dienes Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000012994 photoredox catalyst Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- AHAREKHAZNPPMI-AATRIKPKSA-N (3e)-hexa-1,3-diene Chemical compound CC\C=C\C=C AHAREKHAZNPPMI-AATRIKPKSA-N 0.000 description 1
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- VSAWBBYYMBQKIK-UHFFFAOYSA-N 4-[[3,5-bis[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]-2,4,6-trimethylphenyl]methyl]-2,6-ditert-butylphenol Chemical compound CC1=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C1CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 VSAWBBYYMBQKIK-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- 229910014033 C-OH Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910014570 C—OH Inorganic materials 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000007868 Raney catalyst Substances 0.000 description 1
- 229910000564 Raney nickel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- PMJHHCWVYXUKFD-UHFFFAOYSA-N piperylene Natural products CC=CC=C PMJHHCWVYXUKFD-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Optical Record Carriers (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は光ディスク基板に係り、特に軟化点が100℃
以上の炭化水素樹脂よりなり、基板表面が硫酸クロム酸
混液で処理後の基板表面の水に対する接触角が60〜1
00度になるように接触処理されている、表面記録膜層
との密着性に優れた光ディスク基板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical disk substrate, particularly an optical disc substrate having a softening point of 100°C.
Made of the above hydrocarbon resin, the contact angle of the substrate surface to water after being treated with a sulfuric acid chromic acid mixture is 60 to 1.
The present invention relates to an optical disc substrate that has been subjected to contact treatment so as to have an angle of 00 degrees and has excellent adhesion with a surface recording film layer.
(従来の技術)
レーザーを用いた光学記録は高密度の情報記録、保存、
及び再生が可能であるため、近年その開発が積極的に行
われている。この様な光学記録の一例として光ディスク
を挙げることが出来る。(Prior technology) Optical recording using lasers is a method of high-density information recording, storage,
Since it can be recycled and regenerated, its development has been actively carried out in recent years. An optical disk can be cited as an example of such optical recording.
一般に光ディスクは、透明な基板とその上にコートされ
た種々の記録媒体とから基本的に構成される。In general, an optical disk basically consists of a transparent substrate and various recording media coated thereon.
光ディスクの透明基板は無色透明な合成樹脂が用いられ
るケースが多く、その代表的なものとしてポリカーボネ
ート(以下、rPCJと略称する。)又はポリメチルメ
タクリレート(以下、rPMMA」と略称する。)を挙
げることができる。これらの樹脂は無色透明性に秀でる
他、夫々に固有の優れた性質を有するものではあるが、
光学材料、特に光ディスク基板としての要件を全て備え
ている訳ではなく、解決すべき問題点を有している。例
えば、PCにおいてはその芳香族環に起因する複屈折性
の問題があり、また、吸水性或いは透水性においても問
題がある。一方、PMMAにおいては、耐熱性、吸水性
、靭性の面における問題点がかねてより指摘されている
。このように、これらの樹脂は夫々固有の問題点を内在
させつつ使用に供されているのであるが、実際には更に
、これらの樹脂よりなる透明基板の上にコートされる記
録媒体との関係において、後述のような新たな問題が生
じている。Colorless and transparent synthetic resins are often used for the transparent substrates of optical discs, and typical examples include polycarbonate (hereinafter referred to as rPCJ) or polymethyl methacrylate (hereinafter referred to as rPMMA). I can do it. In addition to being colorless and transparent, these resins each have their own unique properties;
It does not meet all the requirements for an optical material, especially an optical disk substrate, and there are problems that need to be solved. For example, PC has a problem with birefringence due to its aromatic ring, and also has problems with water absorption or water permeability. On the other hand, problems with PMMA in terms of heat resistance, water absorption, and toughness have been pointed out for some time. In this way, each of these resins is used with its own inherent problems, but in reality, there are also problems with the relationship with recording media coated on transparent substrates made of these resins. However, new problems have arisen as described below.
一方、記録媒体については、従来より光ディスクの用途
に応じて多岐にわたる開発が行われている。例えば、ラ
イト、ワンス型と呼ばれる記録−再生専用のものでは穴
あけタイプのものが、またイレーザブル型と呼ばれる、
記録−再生一消去一再記録用のものでは、結晶転移現象
を利用した相転移タイプのもの、光磁気効果を利用した
光磁気タイプのもの等が知られている。これらの記録媒
体用材料は、ライト・ワンス型ではテルル又はその酸化
物、合金化合物等、イレーザブル型では、GdFe 。On the other hand, regarding recording media, a wide variety of developments have been made in the past depending on the uses of optical discs. For example, there is a write-once type that is dedicated to recording and playback, and there is a hole-drilling type that is called an erasable type.
As recording-reproducing, erasing, and re-recording devices, there are known phase change types that utilize crystal transition phenomena, magneto-optical types that utilize magneto-optical effects, and the like. These recording medium materials include tellurium or its oxide, alloy compound, etc. for the write-once type, and GdFe for the erasable type.
TbFe 、 GdFeCo 、 TbFeCoといっ
た希土類−遷移金属のアモルファス合金化合物等、無機
系材料が主流とされており、一般に高真空下でのスパッ
タリング等の乾式処法により、透明基板上に成膜するこ
とにより形成されている。Inorganic materials such as rare earth-transition metal amorphous alloy compounds such as TbFe, GdFeCo, and TbFeCo are mainstream, and are generally formed by forming a film on a transparent substrate by dry processing such as sputtering under high vacuum. has been done.
ところで、PC,PMMA、の吸湿性及び透水性は、一
方では基板自身の吸湿時の膨張によるソリの問題を引き
起こすものであるが、他方、基板を通しての水分の透過
により記録媒体の腐蝕を引き起こし、光ディスクの寿命
を縮める原因となっている。By the way, the hygroscopicity and water permeability of PC and PMMA, on the one hand, cause the problem of warpage due to expansion of the substrate itself when it absorbs moisture, but on the other hand, it causes corrosion of the recording medium due to moisture permeation through the substrate. This causes the lifespan of optical discs to be shortened.
また、基板用樹脂の耐熱性について更に言及すれば、次
のような問題がある。即ち、光ディスク、特にライト・
ワンス型、イレーザブル型等の光ディスクにおいては、
記録の書き込み、消去時の記録媒体の温度は200℃以
上にもなる。このため、ディスク基板にこの熱が直接か
かることは無いにしても、記録の書き込み、消去時には
基板が相当高温になることが予想され、耐熱性の低い樹
脂では、基板の変形成いはグループの変形等の問題が起
こり得る。Further, regarding the heat resistance of the substrate resin, there are the following problems. That is, optical discs, especially light discs,
For optical discs such as once type and erasable type,
The temperature of the recording medium during writing and erasing of records reaches 200° C. or higher. For this reason, even though this heat is not directly applied to the disk substrate, it is expected that the substrate will reach a considerably high temperature when writing and erasing records, and resins with low heat resistance may cause deformation of the substrate or group formation. Problems such as deformation may occur.
一方、光ディスクの生産工程においては、基板或いは記
録媒体の経時変化防止等の目的で、熱処理工程を取り入
れることが多いが、生産性の向上のためには、できるだ
け高い処理温度で処理することにより処理時間を短縮す
ることが望まれる。On the other hand, in the production process of optical discs, a heat treatment process is often incorporated in order to prevent aging of the substrate or recording medium. It is desirable to shorten the time.
この様な親点からも、樹脂の耐熱性が低いと高い処理温
度を採用することができず、生産性を上げることができ
ないという不具合がある。Even from this point of view, there is a problem that if the heat resistance of the resin is low, a high processing temperature cannot be used and productivity cannot be increased.
このようなことから、光ディスクの生産工程或いは使用
状況の高温度に耐えるには、耐熱性の低いPMMAでは
全く不十分であり、従来においては専ら、より耐熱性の
高いPCが透明基板材料として検討されている。しかし
ながら、PCでも必ずしも耐熱性が十分であるという評
価を受けているわけではなく、より高い耐熱性を備える
樹脂材料の出現が望まれている。For these reasons, PMMA, which has low heat resistance, is completely insufficient to withstand the high temperatures of the optical disc production process and usage conditions, and conventionally, PC, which has higher heat resistance, has been exclusively considered as a transparent substrate material. has been done. However, even PC is not necessarily evaluated as having sufficient heat resistance, and the emergence of resin materials with higher heat resistance is desired.
PC,、PMMA等の従来の樹脂の欠点を補うものとし
て主に炭素、水素のみよりなりかつ軟化点の高い透明性
の樹脂を用いる方法があり、特開昭63−43910等
において提案されている。To compensate for the shortcomings of conventional resins such as PC, PMMA, etc., there is a method of using transparent resins that mainly consist of only carbon and hydrogen and have a high softening point, and this method has been proposed in JP-A-63-43910, etc. .
(発明が解決しようとする問題点]
しかしながら、軟化点の高い炭化水素樹脂は、いわゆる
ポリオレフィンの低接着性の例に洩れず、記録膜層との
密接性が悪く光ディスクとしての十分な寿命が得られな
いという問題があった。(Problems to be Solved by the Invention) However, hydrocarbon resins with a high softening point have poor adhesion to the recording layer, as is the case with so-called polyolefins, and do not have a sufficient lifespan as optical discs. The problem was that I couldn't do it.
(問題点を解決するための手段)
そこで、本発明者等は、上述の記録膜層との密着性向上
の方法について鋭意検討した結果、成製品の表面を硫酸
クロム酸混液で処理後の基板表面の水に対する接触角が
60〜100度になるように処理することにより記録膜
との密着性が顕著に向上する事を見出し、本発明に到達
した。(Means for Solving the Problem) Therefore, as a result of intensive study on a method for improving the adhesion with the above-mentioned recording film layer, the inventors of the present invention discovered that the surface of the finished product was treated with a sulfuric acid chromic acid mixture, and then the substrate It was discovered that the adhesion to the recording film was significantly improved by treating the surface so that the contact angle with water was 60 to 100 degrees, and the present invention was achieved based on this finding.
すなわち、本発明の光ディスク基板は、軟化点が100
℃以上の透明性炭化水素樹脂よりなり、その表面を硫酸
クロム酸混液で軽度に接触処理している事を特徴とする
。That is, the optical disc substrate of the present invention has a softening point of 100
It is made of transparent hydrocarbon resin with a temperature of ℃ or above, and its surface is lightly contact-treated with a mixture of sulfuric acid and chromic acid.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明における軟化点が100 ’C以上の透明性炭化
水素樹脂としては、脂環式構造を主鎖或いは側鎖に持つ
高ガラス転移点の非品性樹脂が考えられるが、結晶性で
あっても高透明性が維持されるものであれば、必ずしも
除外するものではない。In the present invention, the transparent hydrocarbon resin with a softening point of 100'C or higher may be a non-grade resin with a high glass transition point and having an alicyclic structure in the main chain or side chain, but it may be crystalline. However, as long as a high level of transparency is maintained, this is not necessarily excluded.
本発明で用いられる軟化点が100℃以上の脂環式構造
を主鎖或いは側鎖に持つ非品性樹脂としては第一にポリ
ビニルシクロヘキサン系樹脂が挙げられる。The non-grade resin having an alicyclic structure with a softening point of 100° C. or higher in its main chain or side chain used in the present invention is firstly polyvinylcyclohexane resin.
本発明で用いられるポリビニルシクロヘキサン系樹脂は
、好ましくはスチレン系樹脂(スチレン系重合体)を核
水添して得られる。The polyvinylcyclohexane resin used in the present invention is preferably obtained by nuclear hydrogenation of a styrene resin (styrene polymer).
原料のスチレン系重合体としては、ビニル芳香族炭化水
素重合体或いはビニル芳香族炭化水素ブロック共重合体
が挙げられる。後者のビニル芳香族炭化水素ブロック共
重合体としてはビニル芳香族炭化水素重合体セグメント
(以下、「Aセグメント]と略称する。)と少なくとも
1種以上の共役ジエン重合体セグメント(以下、「Bセ
グメント]と略称する。)とから成るものが挙げられる
。Examples of the raw material styrenic polymer include vinyl aromatic hydrocarbon polymers and vinyl aromatic hydrocarbon block copolymers. The latter vinyl aromatic hydrocarbon block copolymer includes a vinyl aromatic hydrocarbon polymer segment (hereinafter referred to as "A segment") and at least one conjugated diene polymer segment (hereinafter referred to as "B segment"). ).
モノマーとして用いられるビニル芳香族炭化水素として
は、スチレン、p−メチルスチレン、α−メチルスチレ
ン等を挙げることができ、特に代表的なものとしてスチ
レンが挙げられる。Examples of the vinyl aromatic hydrocarbon used as a monomer include styrene, p-methylstyrene, and α-methylstyrene, with styrene being a particularly representative example.
ビニル芳香族炭化水素重合体としては、これらのビニル
芳香族炭化水素1種よりなる単独重合体或いは2種以上
の共重合体が挙げられる。Examples of the vinyl aromatic hydrocarbon polymer include a homopolymer of one kind of these vinyl aromatic hydrocarbons or a copolymer of two or more kinds thereof.
また、上記ビニル芳香族炭化水素と、これと共重合可能
な他の不飽和単量体とを、ビニル芳香族炭化水素重合体
の特性が失なわれない範囲で共重合して得られる共重合
体を用いる事もできる。In addition, a copolymer obtained by copolymerizing the vinyl aromatic hydrocarbon and other unsaturated monomers copolymerizable with the vinyl aromatic hydrocarbon to the extent that the properties of the vinyl aromatic hydrocarbon polymer are not lost. You can also use fusion.
次に、ビニル芳香族炭化水素ブロック共重合体中のAセ
グメントとしては上述のビニル芳香族炭化水素重合体と
同様のものが挙げられる。また、ブロック共重合体中の
Bセグメントの共役ジエンとしては、1,3−ブタジェ
ン、イソプレン、2,3.ジメチル−1,3−フタジエ
ン、1,3−ペンタジェン、1,3−へキサジエン等が
挙げられ、特に、1,3−ブタジェン、イソプレンが一
般的である。Aセグメント及びBセグメントからなるブ
ロック共重合体は、いわゆるリビングアニオン重合と称
せられる公知の方法、例えば有機リチウム化合物を開始
剤とし、ヘキサン、ヘプタンの様な炭化水素溶媒中で重
合する方法等により容易に得ることができる。なお、こ
のようなブロック共重合体中のAセグメントの含有量は
80%重量以上、好ましくは90重量%以上、更に好ま
しくは93重景%以上である。Aセグメントの含有量が
80%重量未満の場合には、水素付加後に得られる樹脂
の耐熱性が低下し、光ディスク基板としては不適なもの
となる。Next, examples of the A segment in the vinyl aromatic hydrocarbon block copolymer include those similar to those of the vinyl aromatic hydrocarbon polymer described above. Further, examples of the conjugated diene of the B segment in the block copolymer include 1,3-butadiene, isoprene, 2,3. Examples include dimethyl-1,3-phtadiene, 1,3-pentadiene, 1,3-hexadiene, and 1,3-butadiene and isoprene are particularly common. A block copolymer consisting of an A segment and a B segment can be easily produced by a known method called living anion polymerization, such as a method in which polymerization is performed using an organic lithium compound as an initiator in a hydrocarbon solvent such as hexane or heptane. can be obtained. The content of the A segment in such a block copolymer is 80% by weight or more, preferably 90% by weight or more, and more preferably 93% by weight or more. When the content of the A segment is less than 80% by weight, the heat resistance of the resin obtained after hydrogenation decreases, making it unsuitable for use as an optical disc substrate.
本発明において、このような原料スチレン系重合体の分
子量は、数平均分子量で50,000以上であることが
好ましい。スチレン系重合体の分子量が低過ぎると、水
素付加接待られる樹脂の耐熱性、靭性が低下する。In the present invention, the molecular weight of such raw material styrenic polymer is preferably 50,000 or more in terms of number average molecular weight. If the molecular weight of the styrenic polymer is too low, the heat resistance and toughness of the hydrogenated resin will decrease.
一方、分子量の上限については特に制限はないが、通常
の場合、400,000以下であることが好ましい。On the other hand, there is no particular restriction on the upper limit of the molecular weight, but it is usually preferably 400,000 or less.
ポリビニルシクロヘキサン系樹脂は、このようなスチレ
ン系重合体を、芳香族水素化能を有する水素化触媒の存
在下で、核水添して得ることができる。ここで使用され
る水素化触媒としては、例えばニッケル、コバルト、ル
テニウム、ロジウム、白金、パラジウム等の金属又はそ
の酸化物、塩、錯体及びこれらを活性炭、ケイソウ上、
アルミナ等の担体に担持したもの等が挙げられる。これ
らの中でも特にラネーニッケル、ラネーコバルト、安定
化ニッケル及びルテニウム、ロジウム又は白金のカーボ
ン又はアルミナ担持触媒が、反応性の面から好ましい。Polyvinylcyclohexane resin can be obtained by nuclear hydrogenating such a styrene polymer in the presence of a hydrogenation catalyst capable of aromatic hydrogenation. Examples of hydrogenation catalysts used here include metals such as nickel, cobalt, ruthenium, rhodium, platinum, and palladium, or their oxides, salts, and complexes, and these on activated carbon, diatom, etc.
Examples include those supported on a carrier such as alumina. Among these, Raney nickel, Raney cobalt, stabilized nickel and ruthenium, rhodium or platinum supported catalysts on carbon or alumina are particularly preferred from the viewpoint of reactivity.
核水添反応は、50〜250 kg/ cm2の圧力、
100〜200℃の温度下にて、溶媒としてシクロヘキ
サン、メチルシクロヘキサン、n−オクタン、デカリン
、テトラリン、ナフサ等の飽和炭化水素系溶媒或いは、
THF等のエーテル系溶媒を用いて行なうのが好ましい
。The nuclear hydrogenation reaction requires a pressure of 50 to 250 kg/cm2,
At a temperature of 100 to 200°C, a saturated hydrocarbon solvent such as cyclohexane, methylcyclohexane, n-octane, decalin, tetralin, naphtha, etc., or
It is preferable to use an ether solvent such as THF.
核水添反応による芳香核の核水添率は90%以上、特に
95%以上であることが好ましい。核水添率が低く、9
0%未満であると、得られる樹脂の耐熱性の低下、複屈
折の増大等の問題があり好ましくない。It is preferable that the nuclear hydrogenation rate of the aromatic nucleus by the nuclear hydrogenation reaction is 90% or more, particularly 95% or more. Nuclear hydrogenation rate is low, 9
If it is less than 0%, there are problems such as a decrease in the heat resistance of the resulting resin and an increase in birefringence, which is not preferable.
本発明の他の非品性重合体としては、エチレン等の0−
オレフィンと、環状モノオレフィンとのチーグラー触媒
によるランダム共重合体、環状オレフィンのメタセシス
触媒による開環重合体に水素添加したもの等が挙げられ
る。Other non-grade polymers of the present invention include 0-
Examples include a random copolymer of an olefin and a cyclic monoolefin using a Ziegler catalyst, and a hydrogenated ring-opening polymer of a cyclic olefin using a metathesis catalyst.
前者に用いられるa−オレフィンとしては、エチレン、
プロピレン等が挙げられ特にエチレンが好ましい。また
環状モノオレフィンとしては、2Jルボルネン、5−メ
チル−2Jルボルネン、1,4,5.8−テトラメタノ
−1,2,3,4,4a、5,8,8a−オクタヒドロ
ナフタレン、2−メチル−1,4,5,8−テトラメタ
ノ−1,2,3,4,4a、5,8,8a−オクタヒド
ロナフタレン等が挙げられる。The a-olefins used for the former include ethylene,
Examples include propylene, and ethylene is particularly preferred. In addition, as the cyclic monoolefin, 2J rubornene, 5-methyl-2J rubornene, 1,4,5.8-tetramethano-1,2,3,4,4a, 5,8,8a-octahydronaphthalene, 2-methyl -1,4,5,8-tetramethano-1,2,3,4,4a, 5,8,8a-octahydronaphthalene and the like.
後者に用いられる環状オレフィンとしては、前者で挙げ
られた、環状モノオレフィンの他、ジシクロペンタジェ
ン、トリシクロペンタジェン等の環状ポリエンも用い得
る。As the cyclic olefin used in the latter, in addition to the cyclic monoolefins mentioned in the former, cyclic polyenes such as dicyclopentadiene and tricyclopentadiene can also be used.
得られたメタセシス触媒による開環重合体は、前述のポ
リビニルシクロヘキサン系樹脂を製造されるのに用いら
れたものと同様の水素添加触媒を用いて類似の条件下で
水素添加される。The resulting metathesis-catalyzed ring-opened polymer is hydrogenated under similar conditions using a hydrogenation catalyst similar to that used to produce the polyvinylcyclohexane-based resins described above.
前者の非品性重合体は、特開昭60−168708号公
報、61・115912号公報等に、後者の非品性重合
体は、60−26024号公報、63−218726号
公報等に記載されている。The former non-quality polymers are described in JP-A-60-168708, 61-115912, etc., and the latter non-quality polymers are described in JP-A-60-26024, 63-218726, etc. ing.
また、結晶性の樹脂であっても、立体規則性触媒によっ
て重合した、4−メチルペンテン−1重合体の様な透明
性の重合体であれば用いる事が出来る。Even if the resin is crystalline, it is possible to use a transparent polymer such as 4-methylpentene-1 polymer polymerized using a stereoregular catalyst.
本発明における光ディスク基板は射出成型により成型す
る。本発明の炭化水素樹脂は射出成型に必要な流動性を
保持する為、分子量は数平均分子量で20,000より
太きく 200,000以下である。The optical disc substrate in the present invention is molded by injection molding. In order to maintain the fluidity necessary for injection molding, the hydrocarbon resin of the present invention has a number average molecular weight of greater than 20,000 and less than 200,000.
分子量の下限は、樹脂の強度により規定される。The lower limit of the molecular weight is determined by the strength of the resin.
本発明において、樹脂の軟化点はサーモメカニカルアナ
ライザーにより、針入モード用プローブを用い、荷重5
g、5℃ノ分の昇温速度で測定した場合100℃以上、
好ましくは120″C以上である。軟化温度が低いと、
基板、グレープの変形等の問題がある。In the present invention, the softening point of the resin is measured using a thermomechanical analyzer using a probe for needle insertion mode, and a load of 5
g, 100℃ or more when measured at a temperature increase rate of 5℃ minutes,
Preferably it is 120″C or higher.If the softening temperature is low,
There are problems such as deformation of the substrate and grape.
本発明においては以上の様にして得られた樹脂に熱安定
剤を配合し射出成型を行う。In the present invention, a heat stabilizer is blended with the resin obtained as described above and injection molding is performed.
熱安定剤としては、ヒンダードフェノール系熱安定剤、
イオウ系熱安定剤、リン系熱安定剤等が挙げられる。As heat stabilizers, hindered phenol heat stabilizers,
Examples include sulfur-based heat stabilizers and phosphorus-based heat stabilizers.
ヒンダードフェノール系熱安定剤とリン系熱安定剤の併
用が耐熱劣化性の向上という競点から好ましい。A combination of a hindered phenol heat stabilizer and a phosphorus heat stabilizer is preferred from the standpoint of improving heat deterioration resistance.
本発明で採用されるヒンダードフェノール系熱安定剤と
しては、テトラキス[メチレン−3−(3,5−ジ−t
−ブチル−4−ヒドロキシフェニル)プロピオネートメ
タン、3,9−ビス[1,1−ジメチル−2−(13−
(3−t−ブチル−4−ヒトロキシー5−メチルフェニ
ル)プロピオニルオキシ)エチル]−2.4,8.10
−テトラオキサスピロ[5,5]ウンデカン、1,3.
5− )リス(3,5−ジ−t−ブチル−4−ヒドロキ
シベンジル−5−)リアジン−2,4,6(IH,3H
,5H)−トリオン、1.3.5−トリメチル−2,4
,6−)リス(3,5−ジ−t−ブチル4−ヒドロキシ
ベンジル)ベンゼン等が挙げられる。The hindered phenol heat stabilizer employed in the present invention includes tetrakis[methylene-3-(3,5-di-t
-butyl-4-hydroxyphenyl)propionate methane, 3,9-bis[1,1-dimethyl-2-(13-
(3-t-butyl-4-hydroxy5-methylphenyl)propionyloxy)ethyl]-2.4,8.10
-tetraoxaspiro[5,5]undecane, 1,3.
5-) Lis(3,5-di-t-butyl-4-hydroxybenzyl-5-)riazine-2,4,6(IH,3H
,5H)-trione, 1.3.5-trimethyl-2,4
, 6-) lis(3,5-di-t-butyl4-hydroxybenzyl)benzene and the like.
また、リン系熱安定剤としては、テトラキス(2,4−
シーt−デタルフェニル)−4,4’−ビフェニレンホ
スフォナイト、ビス(2,6−ジーt−ブチル−4−メ
チルフェニル)ペンタエリストリール−ジ−ホスファイ
ト等が挙げられる。In addition, as a phosphorus-based heat stabilizer, tetrakis (2,4-
Examples include t-detalphenyl)-4,4'-biphenylene phosphonite and bis(2,6-di-t-butyl-4-methylphenyl)pentaerythryl di-phosphite.
これら安定剤の好適な添加量は各々0.01〜1重量部
である。The suitable amount of each of these stabilizers added is 0.01 to 1 part by weight.
これらの安定剤と本発明の軟化点が100℃以上の炭化
水素樹脂との混合方法については特に制限はないが、通
常は樹脂と安定剤とをリボンブレンダー、タンブラーブ
レンダー ヘンシェルミキサー等で混合し、その後、パ
ンバリーミキサー−軸押出機、二軸押出機等で溶融混練
し、ペレット形状とすることにより混合する。しかして
、このようにして得られたペレットを用い、成形温度2
70〜350℃、特に280〜340℃で射出成形する
ことにより、透明性、耐熱性等に優れ、着色もなく光学
歪みの著しく小さい光ディスク基板を得ることができる
。There are no particular restrictions on the method of mixing these stabilizers with the hydrocarbon resin of the present invention having a softening point of 100° C. or higher, but usually the resin and stabilizer are mixed using a ribbon blender, tumbler blender, Henschel mixer, etc. Thereafter, the mixture is melt-kneaded using a Panbury mixer-screw extruder, twin-screw extruder, etc. to form pellets. Using the pellets thus obtained, the molding temperature was 2.
By injection molding at 70 to 350°C, especially 280 to 340°C, it is possible to obtain an optical disc substrate that has excellent transparency, heat resistance, etc., is free from coloring, and has extremely small optical distortion.
本発明に於ては以上の様にして得られた光ディスク基板
を硫酸クロム酸混液中に含浸させて表面を軽度に接触処
理することが重要である。In the present invention, it is important to impregnate the optical disc substrate obtained in the manner described above in a sulfuric acid chromic acid mixture and to subject the surface to a slight contact treatment.
用いる硫酸クロム酸混液は、重クロム酸アルカリ塩、純
水、濃硫酸の混合物であり、純水及び濃硫酸の重クロム
酸塩に対する割合は、糸屯水/クロム酸塩重量比で1/
1〜20/1好ましくは171〜311゜濃硫酸1重ク
ロム酸重量比で1011〜200/1好ましくは101
1〜30/1である。アルカリ金属としては通常ナトリ
ウム又はカリウムが用いられる。The sulfuric acid chromic acid mixture used is a mixture of an alkali dichromate salt, pure water, and concentrated sulfuric acid, and the ratio of pure water and concentrated sulfuric acid to dichromate is 1/1 in terms of weight ratio of Itoun water/chromate.
1 to 20/1, preferably 171 to 311° Concentrated sulfuric acid monobichromic acid weight ratio of 1011 to 200/1, preferably 101
It is 1 to 30/1. Sodium or potassium is usually used as the alkali metal.
そして、かかる硫酸クロム酸混液による接触処理は軽度
なものであり、これは該処理後の基板表面の水に対する
接触角により定義され、本発明ではかかる接触角が60
〜100度の範囲になるように処理する。The contact treatment with the sulfuric acid chromic acid mixture is mild, and is defined by the contact angle of the substrate surface with water after the treatment, and in the present invention, the contact angle is 60.
It is processed so that the temperature is within the range of ~100 degrees.
処理後、水に対する接触角が低下するのは酸化力の強い
硫酸クロム酸混液によって表面が酸化され、C−OH,
C=O,C0OHなどの含酸素基が形成された為である
と推定される。表面の極性が増大することによって記録
膜の密着性が増大するものと考えられる。After treatment, the contact angle with water decreases because the surface is oxidized by the sulfuric acid chromic acid mixture, which has strong oxidizing power, and C-OH,
It is presumed that this is due to the formation of oxygen-containing groups such as C=O and COOH. It is thought that the adhesion of the recording film increases as the polarity of the surface increases.
処理温度は通常室温ないしは80℃であるが本発明の目
的を達する為には室温で十分である。The treatment temperature is usually room temperature to 80°C, but room temperature is sufficient to achieve the purpose of the present invention.
処理時間は比較的短かくてよく、室温で処理した場合は
1時間以内、好ましくはIO分以内、更に好ましくは3
分以内である。The treatment time may be relatively short, less than 1 hour when treated at room temperature, preferably less than IO minutes, more preferably 3
Within minutes.
処理時間が長ずざると表面が荒れてしまいノイ゛ズレベ
ル等に悪影響を及ぼすと考えられる。If the processing time is not long, the surface will become rough and it is thought that this will have an adverse effect on the noise level, etc.
本発明の光ディスク基板を用いて光ディスクを製造する
際には、該基板表面にスパッタリング、或いは蒸着等の
方法により、SNx、 TaOx等の皮膜を形成し更に
その上にTbFeCo等の記録層を形威し、更にAI等
の反射膜を設は保護膜で覆う等の方法を採用する事が出
来る。When manufacturing an optical disc using the optical disc substrate of the present invention, a film of SNx, TaOx, etc. is formed on the surface of the substrate by a method such as sputtering or vapor deposition, and then a recording layer of TbFeCo, etc. is formed on the film. However, it is also possible to adopt a method such as providing a reflective film such as AI or covering it with a protective film.
[実施例]
以下に実施例及び比較例を挙げて本発明をより具体的に
説明するが、本発明はその要旨を超えない限り、以下の
実施例に限定されるものではない。[Examples] The present invention will be described in more detail with reference to Examples and Comparative Examples below, but the present invention is not limited to the following Examples unless it exceeds the gist thereof.
なお、以下の実施例及び比較例における各種物性は、次
の方法によって測定したものである。In addition, various physical properties in the following Examples and Comparative Examples were measured by the following methods.
■数平均分子量ニ
ゲル・パーミェーション・クロマトグラフィー(GPC
)により、THFを溶媒としてポリスチレンと同様に測
定し、ポリスチレン換算の数平均分子量を求めた。■Number average molecular weight Nigel permeation chromatography (GPC)
) was measured in the same manner as polystyrene using THF as a solvent, and the number average molecular weight in terms of polystyrene was determined.
■核水添率(%):
ポリビニルシクロヘキサン系樹脂をテトラヒドロフラン
(THF)に溶解し、UV吸収により測定した。(2) Nuclear hydrogenation rate (%): Polyvinylcyclohexane resin was dissolved in tetrahydrofuran (THF) and measured by UV absorption.
■軟化温度(℃):
セイコー電子社製サーモメカニカルアナライザーを用い
て、針入モード用プローブを用い荷重585℃ノ分の昇
温速度で軟化温度を測定した。試験片の厚みは3mmと
した。(1) Softening temperature (°C): Using a thermomechanical analyzer manufactured by Seiko Electronics Co., Ltd., the softening temperature was measured using a needle insertion mode probe at a heating rate corresponding to a load of 585°C. The thickness of the test piece was 3 mm.
■光ディスク基板の光線透過率(%):JISK671
4に準拠して測定した。■Light transmittance of optical disc substrate (%): JISK671
Measured according to 4.
■接触角の測定
室温23℃、50%RHの条件下で、協和界面科学社製
(A−DT、 A型を用いて、液滴法により、接触角を
測定した。(2) Measurement of contact angle The contact angle was measured by the droplet method using Kyowa Kaimen Kagaku Co., Ltd. (A-DT, type A) at a room temperature of 23° C. and 50% RH.
サンプルをセットし、脱塩蒸留水を直径的1.5mmの
液球にし、サンプル上に滴下した。その液滴とサンプル
表面との接触している角度を液滴の左右で測り、その平
均値を出し、その測定を数回、測定点を変えて測定し、
その平均値で接触角を算出した。A sample was set, and demineralized distilled water was formed into a liquid sphere with a diameter of 1.5 mm and dropped onto the sample. Measure the contact angle between the droplet and the sample surface on the left and right sides of the droplet, calculate the average value, and repeat the measurement several times at different measurement points.
The contact angle was calculated from the average value.
基板製造例
スチレン単独重合体の水添により得られた、数平均分子
量70,000、核水添率99%のポリビニルシクロヘ
キサン100重量部に、1,3.5−トリメチル−2,
4,6−ドリスー(3,5−ジ−t−ブチル−4−ヒド
ロキシベンジル)ベンゼン(日本チバガイギー社製r
Irganox1330 J )0.2重量部、ビス(
2,6−ジーt−ブチル−4,メチルフェニル)−ペン
タエリスリトール−ジホスファイト(アデカアーガス社
製r MARK PEP−36J O,2重量部を添
加し、押出機を用いて260℃で溶融混線を行ないペレ
ット化した。Substrate production example 1,3.5-trimethyl-2, 1,3.5-trimethyl-2,
4,6-Dolis(3,5-di-t-butyl-4-hydroxybenzyl)benzene (manufactured by Ciba Geigy Japan)
Irganox1330 J) 0.2 parts by weight, screws (
Add 2 parts by weight of 2,6-di-t-butyl-4,methylphenyl)-pentaerythritol-diphosphite (manufactured by Adeka Argus Co., Ltd. r MARK PEP-36J O, and perform melt mixing at 260°C using an extruder. Pelleted.
このペレットを射出成形機(名機社製rM140AJ)
を用いて、可動金型側にグレープ付スタンバ−を取り付
け、樹脂温度300℃で厚さ1.2mm、直径130m
mの円盤状光ディスク基板を成形した。This pellet is molded using an injection molding machine (rM140AJ manufactured by Meiki Co., Ltd.)
Attach a stub bar with a grape to the movable mold side using
A disk-shaped optical disk substrate of m was molded.
基板樹脂の軟化温度は172℃であり、基板の光線透過
率は90%であった。水に対する接触角は109℃であ
った。The softening temperature of the substrate resin was 172° C., and the light transmittance of the substrate was 90%. The contact angle with water was 109°C.
実施例1
重クロム酸カリウム5gをメノウ乳鉢でよくすりつぶす
。この粉砕した重クロム酸カリウム5gを糺水8g中に
入れ、攪拌しながら濃硫酸100gを少量ずつ加えてい
く。Example 1 Thoroughly grind 5 g of potassium dichromate in an agate mortar. 5 g of this pulverized potassium dichromate was placed in 8 g of sizable water, and 100 g of concentrated sulfuric acid was added little by little while stirring.
1時間攪拌を続は重クロム酸カリウムを完全に溶解させ
る。この硫酸クロム酸混液中に室温にて基板製造例で得
られた光ディスク基板を含浸させ2分後に取り出し、よ
く水洗いする。この基板を100℃1時間乾燥し水に対
する接触角を測定したところ69°であった。得られた
基板をスパッタリング装置に装入し、まず8X10−7
Torr以下まで排気し、Arと02との混合ガスを用
いてTaターゲットの反応性スパッタを行ないTa20
5からなる干渉層(厚さ5ooA)を形成した。次いで
、Tbターゲット及びFeCoターゲットを用いたAr
ガスによる2元同時スパッタにより、TbFeCoの記
録層(厚さ300A )を設けた。更に、Tiチップを
配置したA1ターゲットをArガス中でスパッタして厚
さ300Aの反射層を形成した。この皮膜を設けた基板
の鏡面となっている部分に1cm X 1cmの範囲で
各10本の線を引き得られた基板目状部分に寺岡社製粘
着テープ(イミドフィルムベース)を貼りつけ、これを
引き剥す事により、基板と酸化タンタル膜の密着強度を
評価した。Continue stirring for 1 hour to completely dissolve the potassium dichromate. The optical disk substrate obtained in the substrate manufacturing example was impregnated in this sulfuric acid/chromic acid mixture at room temperature, and after 2 minutes, it was taken out and thoroughly washed with water. This substrate was dried at 100° C. for 1 hour and the contact angle with water was measured and found to be 69°. The obtained substrate was loaded into a sputtering device, and first 8X10-7
Evacuate to below Torr and perform reactive sputtering of Ta target using a mixed gas of Ar and 02.
An interference layer (thickness: 50A) consisting of 5 was formed. Next, Ar using Tb target and FeCo target
A TbFeCo recording layer (thickness: 300 Å) was provided by dual-source simultaneous sputtering using gas. Further, an A1 target on which Ti chips were placed was sputtered in Ar gas to form a reflective layer with a thickness of 300 Å. On the mirror surface of the substrate coated with this film, draw 10 lines each in an area of 1 cm x 1 cm. Apply Teraoka's adhesive tape (imide film base) to the resulting grout area of the substrate. The adhesion strength between the substrate and the tantalum oxide film was evaluated by peeling it off.
結果はlmmX1mm角の基板目状試験片100枚のう
ち剥れたものは1枚もなかった。又、酸化タンタル膜を
設けた基板を温度85℃、湿度85%RH中で100時
間高温高湿度試験した後の剥離試験においても剥れたも
のは1枚もなかった。この様に酸化タンタル膜の密着性
は良好であった。この2分処理した表面を電子顕微鏡(
1000倍)で観察したところ表面の荒れは認められな
かった。As a result, out of 100 substrate grain test pieces measuring 1 mm x 1 mm square, not a single piece peeled off. Furthermore, in a peel test after a 100-hour high-temperature, high-humidity test of a substrate provided with a tantalum oxide film at a temperature of 85° C. and a humidity of 85% RH, not a single film peeled off. In this way, the adhesion of the tantalum oxide film was good. The surface treated for 2 minutes was examined using an electron microscope (
When observed under a magnification of 1,000 times, no surface roughness was observed.
実施例−2
実施例−1においてクロム酸混液中に含浸する時間を9
分に変えた以外は実施例−1と同様に処理を行なった。Example-2 In Example-1, the immersion time in the chromic acid mixture was 9
The process was carried out in the same manner as in Example-1 except that the time was changed to minutes.
テープ剥離試験の結果は、100枚中剥れたものは1枚
もなかった。この9分処理した表面を電子顕微鏡(10
00倍)で観察したところ表面の荒れは認°められなか
りた。As a result of the tape peeling test, not a single piece out of 100 peeled off. The surface treated for 9 minutes was examined using an electron microscope (10 minutes).
When observed under a magnification of 00 times), no surface roughness was observed.
比較例−1
処理を行なわなかった基板についてテープ剥離試験を行
なったところ100枚中1O0枚剥離した。Comparative Example 1 When a tape peeling test was conducted on untreated substrates, 100 sheets out of 100 were peeled off.
実施例及び比較例の結果を表1にまとめる。The results of Examples and Comparative Examples are summarized in Table 1.
表1
(発明の効果]
本発明は以上詳述したように表面記録膜層との密着性及
び耐熱性に優れ、吸水性の小さな光ディスク基板の発明
であり、産業上の利用価値は極めて大きい。Table 1 (Effects of the Invention) As detailed above, the present invention is an invention of an optical disk substrate that has excellent adhesion with a surface recording film layer and heat resistance, and has low water absorption, and has extremely high industrial utility value.
Claims (2)
その表面が硫酸クロム酸混液で処理後の基板表面の水に
対する接触角が60〜100度になるように接触処理さ
れていることを特徴とする光ディスク基板(1) Made of hydrocarbon resin with a softening point of 100°C or higher,
An optical disk substrate, the surface of which has been contact-treated with a sulfuric acid chromic acid mixture so that the contact angle of the substrate surface to water after treatment is 60 to 100 degrees.
酸塩に対する割合が純水/重クロム酸塩重量比で1/1
〜3/1、濃硫酸/重クロム酸重量比で10/1〜30
/1である特許請求の範囲第1項に記載の光ディスク基
板(2) The ratio of pure water and concentrated sulfuric acid to dichromate in the sulfuric acid chromic acid mixture is 1/1 in terms of pure water/dichromate weight ratio.
~3/1, concentrated sulfuric acid/dichromic acid weight ratio 10/1~30
The optical disc substrate according to claim 1, which is /1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1195963A JPH0359833A (en) | 1989-07-28 | 1989-07-28 | Optical disk substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1195963A JPH0359833A (en) | 1989-07-28 | 1989-07-28 | Optical disk substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0359833A true JPH0359833A (en) | 1991-03-14 |
Family
ID=16349899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1195963A Pending JPH0359833A (en) | 1989-07-28 | 1989-07-28 | Optical disk substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0359833A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6030680A (en) * | 1998-09-04 | 2000-02-29 | The Dow Chemical Company | Adhesion of amorphous saturated hydrocarbon thermoplastic substrates |
KR20030028534A (en) * | 2003-03-19 | 2003-04-08 | 권오진 | Bingo game set |
-
1989
- 1989-07-28 JP JP1195963A patent/JPH0359833A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6030680A (en) * | 1998-09-04 | 2000-02-29 | The Dow Chemical Company | Adhesion of amorphous saturated hydrocarbon thermoplastic substrates |
KR20030028534A (en) * | 2003-03-19 | 2003-04-08 | 권오진 | Bingo game set |
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