JPH0358427A - Bump formation and conductor paste for bump formation - Google Patents
Bump formation and conductor paste for bump formationInfo
- Publication number
- JPH0358427A JPH0358427A JP1192612A JP19261289A JPH0358427A JP H0358427 A JPH0358427 A JP H0358427A JP 1192612 A JP1192612 A JP 1192612A JP 19261289 A JP19261289 A JP 19261289A JP H0358427 A JPH0358427 A JP H0358427A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- low melting
- metal
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 74
- 238000002844 melting Methods 0.000 claims abstract description 52
- 230000008018 melting Effects 0.000 claims abstract description 50
- 239000000843 powder Substances 0.000 claims abstract description 32
- 230000004907 flux Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 17
- 150000002739 metals Chemical class 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000007499 fusion processing Methods 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 230000005484 gravity Effects 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- MMCPOSDMTGQNKG-UJZMCJRSSA-N aniline;hydrochloride Chemical compound Cl.N[14C]1=[14CH][14CH]=[14CH][14CH]=[14CH]1 MMCPOSDMTGQNKG-UJZMCJRSSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＴＡＢ（Ｔａｐｅ Ａｕｔｏ＋＊ａＬｅｄ
Ｂｏｎｄｉｎｇ）に用いられるバンブ形成に際し、吐出
（吹き付け）付着させる導体ペーストに関するものであ
る．（従来の技術）
従来、このような分野の技術としては、例えば以下に示
すようなものがあった。Detailed Description of the Invention (Industrial Application Field) The present invention is directed to TAB (Tape Auto+*aLed
The present invention relates to a conductive paste that is applied by spraying when forming bumps used in bonding. (Prior Art) Conventionally, as technologies in this field, there have been the following, for example.
第３図はかかる従来のバンプ形成工程を示す断面図であ
る．
第３図（ａ）に示すように、この種の導体ペーストとし
ては、半田付け等の時に用いられるロジン系フランクス
３中に半田粉末２を混入させた半田ペースト（クリーム
半田とも呼ぶ）ｌがある．この半田ペーストｌの粘度は
３５０，０００ 〜６００，０００（ｃｐ）智度と高く
、その成分はロジン、アジピン酸、トリエタノールアミ
ン、アニリン塩酸塩であり、イソプロピルアルコール等
の有機溶剤で希釈され、加熱固化後は半田ベース｝１全
体のおよそマ０〜８０％程度の半田籾末（固形分）２と
なる．この半田扮末２は所望の組成を有し、加熱によっ
てその有機成分が除去されるため、半田ベース｝ｌ全体
の溶融後の高さは付着時よりも低くなり、体積が減少す
る．更に、加熱によって全ての半田が溶融すると、従来
、球状体の半田籾末２であったものが、第３図（ｂ）に
示すような金属平面層７となり、更に体積が減少する．
このように、従来の半田ペーストｌに含有された金属粉
末２は、加熱により溶融して金属平面層７を形成するこ
とになる．なお、第３図において、４はシリコン基板、
５はＡｌ電極、６は保護膜である．
（発明が解決しようとする課題）
上記のように、従来の半田ペーストｌでは、含有された
金属粉末２が加熱されて全て溶融するとその体積が減少
し、半田ペーストｌを付着形成したバンブの高さが低く
なるという問題があった．本発明は、上記問題点を除去
し、金属組成の安定化を図り、体積の減少を抑え、確実
な接続を行うことができるバンプ形成用導体ペースト及
びハンプ形成方法を提供することを目的とする。FIG. 3 is a cross-sectional view showing such a conventional bump forming process. As shown in Fig. 3(a), this type of conductor paste includes solder paste (also called cream solder) L, which is made by mixing solder powder 2 into rosin-based Franks 3, which is used for soldering, etc. ．． The viscosity of this solder paste is as high as 350,000 to 600,000 (cp), and its components are rosin, adipic acid, triethanolamine, and aniline hydrochloride, and it is diluted with an organic solvent such as isopropyl alcohol. After heating and solidifying, the solder powder (solid content) will be approximately 0 to 80% of the entire solder base. This solder powder 2 has a desired composition, and its organic components are removed by heating, so that the height of the entire solder base after melting becomes lower than when it is attached, and its volume decreases. Furthermore, when all the solder is melted by heating, what used to be the spherical solder powder 2 becomes a flat metal layer 7 as shown in FIG. 3(b), and the volume further decreases. In this way, the metal powder 2 contained in the conventional solder paste 1 is melted by heating to form the flat metal layer 7. In addition, in FIG. 3, 4 is a silicon substrate,
5 is an Al electrode, and 6 is a protective film. (Problems to be Solved by the Invention) As described above, in the conventional solder paste 1, when the metal powder 2 contained therein is heated and melted, its volume decreases, and the height of the bump formed by adhering the solder paste 1 decreases. There was a problem that the quality was low. An object of the present invention is to provide a conductive paste for forming bumps and a method for forming bumps, which can eliminate the above-mentioned problems, stabilize the metal composition, suppress volume reduction, and ensure reliable connection. .
（課題を解決するための手段）
本発明は、上記目的を達威するために、金属粉末を含有
したフラックス成分から成るバンプ形成用導体ペースト
において、前記金属粉末（１１． ２１）として、低融
点金属（ｌｌｂ，２ｌｂ）と高融点金属（ｌｌａ，２１
ａ）とを一体的に形成したものを用いる．
また、半導体基板（４）の電極（５）上に低融点金属（
ｌｌｂ， ２ｌｂ）と高融点金属（ｌｌａ，２１ａ）と
を一体的に形成した金属粉末（１１． ２１）を含有し
たフラックス成分から成る導体ペーストを設け、該導体
ペーストを加熱して前記低融点金属（１ｌ ｂ２ｌ ｂ
）を溶融させ、高融点金属（ｌｌａ，２１ａ）を下方
に集積させる工程とを施すようにしたものである．
（作用）
本発明によれば、上記したように、金属粉末を含有した
フラックス威分から或る導体ペーストにおいて、金属粉
末（１１． ２１）として、低融点金属（ｌｌｂ， ２
ｌｂ）と高融点金属（ｌｌａ，２１ａ）とを一体的に形
成しているため、これら両金属を均一な割合で混入する
ことができ、一定高さのバンプ電極を得ることができる
．また、半田溶融後は低融点金属（１３． ２３）が上
方に形成されるので、比較的柔らかく、融点の低いバン
ブを形成することができ、外部リード又はフエイスダウ
ンボンディング等の接続に好適である．
（実施例）
以下、本発明の実施例について図面を参照しながら詳細
に説明する．
第１図は本発明の実施例を示すバンプ形成用導体ペース
トを用いたバンプ形成工程断面図である．図中、１０は
バンプ形成用導体ペーストであり、ロジン系フラックス
ｌ２中に球状金属粉末素材１ｌを混入させたものである
．この金属粉末素材１ｌは、第２図に示すように、球状
であり、その中心核に高融点金属１１ａ、その周囲に低
融点金属１ｌｂが形成されている．
第１図（ａ）に示すように、シリコン基板４上に１！？
ｌ極５及び保護膜６を形成し、その上に導体ペースト１
０を吹き付けて付着させる．これを、例えば１９０〜２
００ ’Ｃ前後で加熱処理すると、低融点金属１ｌｂは
溶融し、第１図（ｂ）に示したように、高融点金属１１
ａが下方に集積し、上方には溶融後の低融点金属（以下
、単に低融点金属という）ｌ３の層が形成される。この
現象は、高融点金属１１ａとして比較的重い金属、例え
ば銅を用いた場合、その比重が８．９３であるのに対し
、低融点金属１ｌｂとして錫を用いた場合の比重が７．
２９、又は半田（Ｓｎ６０， Ｐｂ４０の組成）を用い
た場合の比重が８４５０であり、このように、両金属の
比重に差があることにより起こるものである．なお、こ
の時、銅の融点は１０８３℃、半田の融点は１９０゜Ｃ
である．従って、バンブｌ４はそれほど低くならず、２
０〜７０μｍ程度の高さを維持することができる。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a conductor paste for bump formation consisting of a flux component containing metal powder, in which a low melting point powder is used as the metal powder (11.21). Metal (llb, 2lb) and high melting point metal (lla, 21
Use a product that is integrally formed with a). Further, a low melting point metal (
A conductive paste made of a flux component containing a metal powder (11.21) integrally formed with a high melting point metal (lla, 21a) and a high melting point metal (lla, 21a) is provided, and the conductive paste is heated to melt the low melting point metal. (1l b2l b
) is melted and the high melting point metal (lla, 21a) is accumulated below. (Function) According to the present invention, as described above, in a conductive paste made from a flux containing metal powder, low melting point metal (llb, 2
lb) and the high melting point metal (lla, 21a) are integrally formed, it is possible to mix these two metals in a uniform ratio, and it is possible to obtain a bump electrode of a constant height. Furthermore, since the low melting point metal (13. 23) is formed above after the solder is melted, it is possible to form a bump that is relatively soft and has a low melting point, making it suitable for connections such as external leads or face down bonding. ．． (Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view of a bump forming process using a bump forming conductive paste showing an embodiment of the present invention. In the figure, 10 is a conductive paste for forming bumps, which is made by mixing 1 liter of spherical metal powder material into rosin-based flux 12. As shown in FIG. 2, this metal powder material 1l is spherical, with a high melting point metal 11a formed at its central core and a low melting point metal 1lb formed around it. As shown in FIG. 1(a), 1! ?
A l pole 5 and a protective film 6 are formed, and a conductive paste 1 is applied thereon.
Spray 0 to adhere. For example, set this to 190 to 2
When heat treated at around 00'C, 1 lb of low melting point metal melts, and as shown in Figure 1(b), high melting point metal 11
a is accumulated in the lower part, and a layer of melted low melting point metal (hereinafter simply referred to as low melting point metal) l3 is formed above. This phenomenon is caused by the fact that when a relatively heavy metal such as copper is used as the high melting point metal 11a, its specific gravity is 8.93, whereas when tin is used as the low melting point metal 1lb, the specific gravity is 7.93.
The specific gravity when using 29 or solder (composition of Sn60, Pb40) is 8450, and this is caused by the difference in the specific gravity of the two metals. At this time, the melting point of copper is 1083°C and the melting point of solder is 190°C.
It is. Therefore, bump l4 is not so low and 2
A height of about 0 to 70 μm can be maintained.
また、低融点金属ｌ３が上方に形成されるので、比較的
柔らかく、融点の低いバンブが形成され、外部リード又
はフエイスダウンボンディング等の接続に好適である。Furthermore, since the low melting point metal l3 is formed above, a relatively soft bump with a low melting point is formed, which is suitable for connections such as external leads or face down bonding.
ここで、金属粉末素材１１は、例えば２〜３μｍ程度の
粒度であり、これは、バンブ１４の形成場所、エリアの
広さ等によって変更することができる．また、上記した
金属粉末素材は、球状体でなくても、第５図に示すよう
なブロック状の金属粉末素材２ｌでもよい．つまり、第
５図（ａ）に示すように、下層に高融点金属層３１ａを
、上層に低融点金属層３ｌｂを形成した板状素材３０を
機械的に切断し、第５図（ｂ）に示すようなブロック状
の高融点金属２１ａと低融点金属２ｌｂからなる金属粉
末素材２ｌを形成するようにしてもよい．
このように構成されたブロック状の金属粉末素材２１を
、第４図に示すように、フラックス成分中に混入させ、
更にロジン系フラックス２２を混入させて、バンプ形成
用導体ペースト２０を得る．第４図（ａ）に示すように
、シリコン基板４上にＡｌ電極５及び保ｆｌ［６を形成
し、その上に導体ペースト２０を吹き付けて付着させる
．これを、例えば１９０〜２００ ’Ｃ前後で加熱処理
すると、低融点金属２ｌｂは溶融する。ここで、高融点
金属２１ａが比較的重い金属の場合は、両金属の比重に
差があるので、第４図（ｂ）に示すように、高融点金属
２１ａが下方に集積し、上方には低融点金［２３の層が
形成される．従って、前記実施例と同様、バンブ２４の
高さを２０〜７０μｍ程度に維持することができる．
また、上記において、低融点金属は一層に限定されるも
のではなく、例えば、錫の上に鉛等を形成した複数層に
してもよい．
更に、加熱処理においては、上記複数層の外側の金属だ
けが溶融するようにしてもよいし、高融点金属の方を合
金から組或される素材で構威してもよい．また、高融点
金属の表面にメッキすることにより、例えばニッケル等
の層を設けてもよい．なお、本発明は上記実施例に限定
されるものではなく、本発明の趣旨に基づいて種々の変
形が可能であり、これらを本発明の範囲から排除するも
のではない．
（発明の効果）
以上、詳細に説明したように、本発明によれば、次のよ
うな効果を奏することができる．（１）金属粉末を含有
したフラックス成分から成る導体ペーストにおいて、金
属粉末として高融点金属と低融点金属とを一体的に形成
しているため、これら両金属を均一の割合で混入するこ
とができ、一定高さのバンブを得ることができる．（２
）加熱処理後は低融点金属の層が上方に形成されるので
、比較的柔らかく、融点の低いバンブを形成することが
でき、外部リード又はフェイスダウンボンディング等の
接続に好適である．（３）金属粉末を球状に形成する場
合には、角状にしたものに比べて、電極への応力が小さ
くなり、より良好なバンプ電極接続を行うことができる
．Here, the metal powder material 11 has a particle size of, for example, about 2 to 3 μm, and this can be changed depending on the location where the bumps 14 are formed, the size of the area, etc. Further, the metal powder material described above does not have to be spherical, but may be a block-shaped metal powder material 2L as shown in FIG. That is, as shown in FIG. 5(a), a plate-shaped material 30 with a high melting point metal layer 31a formed on the lower layer and a low melting point metal layer 3lb formed on the upper layer is mechanically cut, and as shown in FIG. 5(b). As shown, a metal powder material 2l consisting of a block-shaped high melting point metal 21a and a low melting point metal 2lb may be formed. The block-shaped metal powder material 21 configured in this way is mixed into a flux component as shown in FIG.
Furthermore, a rosin-based flux 22 is mixed to obtain a conductive paste 20 for forming bumps. As shown in FIG. 4(a), an Al electrode 5 and a conductor paste 6 are formed on a silicon substrate 4, and a conductive paste 20 is sprayed onto the electrode 5 to adhere thereto. When this is heat-treated, for example, at around 190 to 200'C, 2 lb of low melting point metal is melted. Here, if the high melting point metal 21a is a relatively heavy metal, there is a difference in the specific gravity of the two metals, so as shown in FIG. A layer of low melting point gold [23] is formed. Therefore, as in the previous embodiment, the height of the bump 24 can be maintained at about 20 to 70 μm. Furthermore, in the above, the low melting point metal is not limited to one layer, but may be formed in multiple layers, for example, lead or the like formed on tin. Further, in the heat treatment, only the outer metal of the plurality of layers may be melted, or the high melting point metal may be made of a material made of an alloy. Alternatively, a layer of nickel or the like may be provided by plating the surface of the high melting point metal. Note that the present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these are not excluded from the scope of the present invention. (Effects of the Invention) As described above in detail, according to the present invention, the following effects can be achieved. (1) In the conductor paste made of a flux component containing metal powder, since the high melting point metal and the low melting point metal are integrally formed as the metal powder, these two metals can be mixed in a uniform ratio. , it is possible to obtain bumps with a constant height. (2
) After heat treatment, a layer of low melting point metal is formed above, so a relatively soft bump with a low melting point can be formed, making it suitable for connections such as external leads or face-down bonding. (3) When the metal powder is formed into a spherical shape, the stress on the electrode is smaller than when the metal powder is formed into an angular shape, and a better bump electrode connection can be achieved.
Claims (3)
プ形成用導体ペーストにおいて、 前記金属粉末は低融点金属と高融点金属とを一体的に形
成した素材であるバンプ形成用導体ペースト。(1) A bump-forming conductor paste comprising a flux component containing metal powder, wherein the metal powder is a material formed integrally with a low-melting point metal and a high-melting point metal.
て、前記金属粉末は高融点金属を核として低融点金属を
周囲に形成した素材であるバンプ形成用導体ペースト。(2) The conductor paste for bump formation according to claim 1, wherein the metal powder is a material having a high melting point metal as a core and a low melting point metal around it.
プ形成用導体ペーストを用いたバンプ形成方法において
、 （ａ）半導体基板の電極上に、低融点金属と高融点金属
とを一体的に形成した素材を含有したフラックス成分か
ら成る導体ペーストを設ける工程と、（ｂ）該導体ペー
ストを加熱して前記低融点金属を溶融させ、前記高融点
金属を下方に集積させる工程とを施すようにしたバンプ
形成方法。(3) In a bump forming method using a bump forming conductor paste made of a flux component containing metal powder, (a) a material in which a low melting point metal and a high melting point metal are integrally formed on an electrode of a semiconductor substrate; (b) heating the conductive paste to melt the low melting point metal and accumulating the high melting point metal below; Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1192612A JP2771616B2 (en) | 1989-07-27 | 1989-07-27 | Conductive paste for bump formation and bump formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1192612A JP2771616B2 (en) | 1989-07-27 | 1989-07-27 | Conductive paste for bump formation and bump formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0358427A true JPH0358427A (en) | 1991-03-13 |
| JP2771616B2 JP2771616B2 (en) | 1998-07-02 |
Family
ID=16294156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1192612A Expired - Lifetime JP2771616B2 (en) | 1989-07-27 | 1989-07-27 | Conductive paste for bump formation and bump formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2771616B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759910A (en) * | 1996-12-23 | 1998-06-02 | Motorola, Inc. | Process for fabricating a solder bump for a flip chip integrated circuit |
-
1989
- 1989-07-27 JP JP1192612A patent/JP2771616B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759910A (en) * | 1996-12-23 | 1998-06-02 | Motorola, Inc. | Process for fabricating a solder bump for a flip chip integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2771616B2 (en) | 1998-07-02 |
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