JPH0358048A - Positive type photosensitive polyiide composition - Google Patents
Positive type photosensitive polyiide compositionInfo
- Publication number
- JPH0358048A JPH0358048A JP19609489A JP19609489A JPH0358048A JP H0358048 A JPH0358048 A JP H0358048A JP 19609489 A JP19609489 A JP 19609489A JP 19609489 A JP19609489 A JP 19609489A JP H0358048 A JPH0358048 A JP H0358048A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- group
- composition
- aromatic hydrocarbon
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 14
- 239000004642 Polyimide Substances 0.000 claims abstract description 21
- 229920001721 polyimide Polymers 0.000 claims abstract description 21
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract 4
- -1 sulfonyloxy group Chemical group 0.000 claims description 22
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 abstract description 3
- 125000000524 functional group Chemical group 0.000 abstract description 2
- 150000003949 imides Chemical class 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 12
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 241001428214 Polyides Species 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 150000004984 aromatic diamines Chemical class 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- RWYFURDDADFSHT-RBBHPAOJSA-N diane Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.C1=C(Cl)C2=CC(=O)[C@@H]3CC3[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(C)=O)(OC(=O)C)[C@@]1(C)CC2 RWYFURDDADFSHT-RBBHPAOJSA-N 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000036571 hydration Effects 0.000 description 2
- 238000006703 hydration reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- BUZMJVBOGDBMGI-UHFFFAOYSA-N 1-phenylpropylbenzene Chemical compound C=1C=CC=CC=1C(CC)C1=CC=CC=C1 BUZMJVBOGDBMGI-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- JFEXPVDGVLNUSC-UHFFFAOYSA-N 3-(3-aminophenyl)sulfanylaniline Chemical compound NC1=CC=CC(SC=2C=C(N)C=CC=2)=C1 JFEXPVDGVLNUSC-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- MITHMOYLTXMLRB-UHFFFAOYSA-N 4-(4-aminophenyl)sulfinylaniline Chemical compound C1=CC(N)=CC=C1S(=O)C1=CC=C(N)C=C1 MITHMOYLTXMLRB-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- JJHHIJFTHRNPIK-UHFFFAOYSA-N Diphenyl sulfoxide Chemical compound C=1C=CC=CC=1S(=O)C1=CC=CC=C1 JJHHIJFTHRNPIK-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- 244000062793 Sorghum vulgare Species 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 235000019713 millet Nutrition 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- AAHFRWRQQDVWPX-UHFFFAOYSA-N prop-2-ene-1-sulfonyl chloride Chemical compound ClS(=O)(=O)CC=C AAHFRWRQQDVWPX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Paints Or Removers (AREA)
Abstract
Description
【発明の詳細な説明】
く産業上の利用分野〉
本発明はボジ型感光性ボリイ藁ド組戒物に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid photosensitive solid straw molded article.
く従来の技術〉
ポリイミドは優れた特性である耐熱性や電気特性、機械
的特性の点から各種電子部品への用途展開に用いられて
いるが、作業工程の合理化のためにポリイミドに感光性
を付与する試みが従来からなされている。(Conventional technology) Polyimide is used for various electronic components due to its excellent properties such as heat resistance, electrical properties, and mechanical properties. Attempts have been made to provide this.
特に、ボジ型感光性ポリイξドに関してはボリイ藁ド前
駆体に感光性オルトナフトキノンジアジド化合物を混合
する方法(特開昭52−13315号公報)や、可溶性
ボリイξドに感光性オルトナフトキノンジアジド化合物
を混合する方法などが提案されている。In particular, regarding the positive-type photosensitive polyide ξ-de, there is a method of mixing a photosensitive orthonaphthoquinone diazide compound with a polyide precursor (JP-A-52-13315), and a method of mixing a photosensitive ortho-naphthoquinone diazide compound with a soluble polyide ξ-de. A method of mixing the two has been proposed.
上記感光性ポリイミド組戒吻は、通常、溶液状態で基村
上に塗布、乾燥し、フォトマスクを施したのち紫外線な
どの活性光線を照射する。次いで、任意の現像液で露光
部を溶解除去して目的とする画像を形或させる。The above-mentioned photosensitive polyimide composite coating is usually applied in a solution state onto the substrate, dried, and after applying a photomask, is irradiated with actinic light such as ultraviolet rays. Next, the exposed area is dissolved and removed using an arbitrary developer to form a desired image.
画像形威後、高温処理を行ないポリイミド環を閉環させ
、溶媒や閉環水、ナフトキノンジアジド等を揮敗除去せ
しめることによって耐熱性を有するポリイミドフィルム
を得るのである。After forming the image, a heat-resistant polyimide film is obtained by performing high temperature treatment to close the polyimide ring and volatilize and remove the solvent, ring-closing water, naphthoquinone diazide, etc.
く発明が解決しようとする課題〉
しかし、一般に上記従来の感光性組底物は、ボリイξド
前駆体もしくはポリイミドに感光性化合物であるオルト
ナフトキノンジアジドを混合しているだけであり、光照
射によりオルトナフトキノンジアジドのみがアルカリ可
溶性となり、ボリマー骨格の構造は光によっては何ら変
化を生じないものである。Problems to be Solved by the Invention> However, in general, the above-mentioned conventional photosensitive composite soles only contain a polyimide precursor or polyimide mixed with orthonaphthoquinone diazide, which is a photosensitive compound, and when irradiated with light, Only orthonaphthoquinonediazide is alkali-soluble, and the structure of the polymer skeleton does not change in any way when exposed to light.
従って、未露光部の現像液に対する溶解阻止能を向上す
るためにオルトナフトキノンジアジドを多く混合しなけ
ればならず、硬化後の体積収縮が生じ、寸法精度の低下
が著しいという問題がある.本発明の目的は、ボリマー
自体の溶解性を向上させて微細パターンの形成において
も高感光性を有し、かつ寸法精度にも優れたボジ型感光
性ボリイξド組威吻を提供することにある。Therefore, a large amount of orthonaphthoquinone diazide must be mixed in order to improve the ability to inhibit dissolution of the unexposed area in the developing solution, resulting in volumetric shrinkage after curing and a significant drop in dimensional accuracy. The purpose of the present invention is to provide a positive photosensitive polymer ξ-doped assembly which has high photosensitivity even in the formation of fine patterns by improving the solubility of the polymer itself and has excellent dimensional accuracy. be.
く課題を解決するための手段〉
本発明者らは鋭意検討を重ねた結果、特定の官能基をイ
ミドボリマーの分子骨格中に導入することにより、上記
目的を迷或できることを見い出し、本発明を完戒するに
至った。As a result of extensive studies, the present inventors have discovered that the above object can be achieved by introducing a specific functional group into the molecular skeleton of an imide polymer, and have completed the present invention. I have come to admonish you.
即ち、本発明のボジ型感光性ポリイミド組或吻は、下記
一般式(1)、
(但し、式中Ar,は4価の芳香族炭化水素残基、Ar
zは芳香環のオルソ位またはメタ位の少なくとも1つの
位置にO−ナフトキノンジアジドスルホニルオキシ基を
有する2価の芳香族炭化水素残基である)で表わされる
繰り返し単位を有し、Rがジ型感光性ポリイミド組y′
Ii.物を提供するものである。That is, the positive type photosensitive polyimide composition of the present invention has the following general formula (1), (wherein Ar is a tetravalent aromatic hydrocarbon residue, Ar
z is a divalent aromatic hydrocarbon residue having an O-naphthoquinonediazide sulfonyloxy group at at least one ortho or meta position of the aromatic ring), and R is a di-type Photosensitive polyimide group y'
Ii. It is something that provides something.
上記一般式〔I〕中のArtは4価の芳香族炭化水素残
基であり、具体的にはベンゼン環やナフタレン環、アン
トラセン環なとの縮合多環芳香族、下記一般式、
?但し、式中Phはベンゼン環、pはOまたは1であり
、χは次の各基が好ましい。Art in the above general formula [I] is a tetravalent aromatic hydrocarbon residue, specifically a fused polycyclic aromatic group with a benzene ring, a naphthalene ring, an anthracene ring, etc., and the following general formula: ? However, in the formula, Ph is a benzene ring, p is O or 1, and χ is preferably the following group.
−C}!Z , C(C旧)! , CO
, −S−−SO■一 −o−,−o−ph−s−ph
−〇一C(CF3)! , O Ph SO
x Ph 0一O Ph C(CF3)z −
F’h O )また、前記一般式中のkrtは芳香
環のオルソ位またはメタ位の少なくとも1つの位置に0
−ナフトキノンジアジドスルホニルオキシ基を有する2
価の芳香族炭化水素残基であり、具体的には次のまた、
前記一般式CI)中の芳香族炭化水素残基である、
は、一^r3−で表される残基を導入できる芳香族ジア
aノ化合物を1〜50モル%併用することによって置き
換えることができる。^r,を導入するためのジアaン
としては、例えば4.4′−ジアもノジフェニルエーテ
ル、3.3′−ジメチル−4.4゜−ジアξノジフェニ
ルエーテル、3,3′ージメトキシー4,4゜−ジアえ
ノジフエニルエーテル、3.3゜−ジアミノジフェニル
エーテル、3,4゜−ジア旦ノジフェニルエーテル等の
ジフェニルエーテル系ジアよン、4,4゜−ジアミノジ
フェニルチオエーテル、3.3’ −ジメチルー4,4
′−ジアξノジフェニルチオエーテル、3、3゛−ジメ
トキシー4.4 −ジア短ノジフェニルチオエーテル、
3.3’ −ジアミノジフふニルチオエーテル等のジフ
ェニルチオエーテル系ジア藁ン、4,4゜−ジアξノベ
ンゾフエノン、3.3”−ジメチル−4.4゛−ジアミ
ノベンゾフエノン、3,3゜−ジア果ノベンゾフェノン
等のペンゾフエノン系ジアミン、3.3” −ジアミノ
ジフェニルメタン、4,4゜−ジアミノジフエニルメタ
ン、3.3”−ジメチル−4,4゜−ジアミノジフェニ
ルメタン等のジフェニルメタン系ジアξン、2.2’−
ビス(4−アξノフェニル)プロパン、2,2 −ビス
(3−アミノフェニル)ブロバン等のビスフエニルプロ
パン系ジアξン、4.4′−ジアミノジフェニルスルホ
キシド、3,3゛−ジアミノジフェニルスルホキシド等
のジフユニルスルホキシド系ジアミン、4.4′−ジア
ξノジフェニルスルホン、3,3゛−ジア多ノジフェニ
ルスルホン等のジフェニルスルホン系シアミン、ベンジ
ジン、3.3゜−ジメチルベンジジン、3.3゜−ジメ
トキシベンジジン、3.3′−ジア逅ノビフェニル等の
ビフェニル系ジア竃ン、2,6−ジアξノビリジン、2
.5−ジアもノビリジン、3,4−ジアミノビリジン等
のビリジン系ジア稟ン、o−,m−またはp−ジアaノ
ベンゼン等のベンゼン系ジア果ン、その他4,4゛ジ(
p−ア泉ノフェノキシ)ジフェニルプロパン、4.4′
−ジ(m−アミノフェニルスルホニル)ジフエニルエー
テル、4.4’−ジ(p−ア果ノフェニルスルホニル)
ジフェニルエーテル、4.4゜−ジ(m−ア逅ノフェニ
ルチオエーテル)ジフェニルスルフィド、4,4゛−ジ
(p−アミノフェニルチオエーテル)ジフェニルスルフ
ィド、4.4゛−ジ(m−アミノフェノキシ)ジフェニ
ルケトン、4.4゛−ジ(p−アミノフェノキシ)ジフ
エニルケトン、4.4’−ジ(m−アミノフエノキシ)
ジフェニルメタン、4.4゜−ジ(p一ア果ノフユノキ
シ)ジフェニルメタン、2,5一ジアミノトルエン、2
.4−ジアミノキシレン、ジア泉ノジュレン、1,5−
ジアミノナフタレン、2,6−ジア多ノナフタレン等が
挙げられる。-C}! Z, C (old C)! , CO
, -S--SO■1 -o-,-o-ph-s-ph
-〇1C(CF3)! , O Ph SO
x Ph 0-O Ph C(CF3)z −
F'h O ) In addition, krt in the above general formula is 0 at at least one ortho position or meta position of the aromatic ring.
-2 having a naphthoquinonediazide sulfonyloxy group
It is a valent aromatic hydrocarbon residue, specifically the following,
The aromatic hydrocarbon residue in the general formula CI) can be replaced by the combined use of 1 to 50 mol% of an aromatic diaano compound capable of introducing a residue represented by 1^r3-. can. Examples of diane for introducing ^r include 4,4'-dianodiphenyl ether, 3,3'-dimethyl-4,4゜-diaξnodiphenyl ether, 3,3'-dimethoxy4,4 Diphenyl ether type diaryons such as ゜-diaminodiphenyl ether, 3.3゜-diaminodiphenyl ether, 3,4゜-diaminodiphenyl ether, 4,4゜-diaminodiphenylthioether, 3.3'-dimethyl-4 ,4
'-diaξnodiphenylthioether, 3,3'-dimethoxy4,4-diashort diphenylthioether,
3.3'-Diphenylthioether-based diarowers such as diaminodiphnyl thioether, 4,4゜-diaξnobenzophenone, 3.3''-dimethyl-4.4゛-diaminobenzophenone, 3,3゜-dia Penzophenone diamines such as fruit benzophenone, diphenylmethane diamines such as 3.3"-diaminodiphenylmethane, 4,4°-diaminodiphenylmethane, 3.3"-dimethyl-4,4°-diaminodiphenylmethane, 2 .2'-
Bisphenylpropane-based diane such as bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)broban, 4,4'-diaminodiphenylsulfoxide, 3,3'-diaminodiphenylsulfoxide Diphenyl sulfoxide type diamines such as 4,4′-diaξnodiphenylsulfone, diphenylsulfone type cyamines such as 3,3゛-diapolinodiphenylsulfone, benzidine, 3.3゜-dimethylbenzidine, 3.3゜-dimethoxybenzidine, biphenyl-based diaphragms such as 3,3'-diatonobiphenyl, 2,6-diaxinobiridine, 2
.. 5-dia also includes pyridine-based diabenzenes such as nobilidine and 3,4-diaminobiridine, benzene-based diabenzenes such as o-, m-, or p-dianobenzene, and other 4,4-di(
p-Azunophenoxy) diphenylpropane, 4.4'
-di(m-aminophenylsulfonyl)diphenyl ether, 4,4'-di(p-aminophenylsulfonyl)
Diphenyl ether, 4.4゜-di(m-aminophenylthioether) diphenyl sulfide, 4,4゛-di(p-aminophenylthioether) diphenyl sulfide, 4.4゛-di(m-aminophenoxy) diphenyl ketone , 4.4'-di(p-aminophenoxy)diphenylketone, 4.4'-di(m-aminophenoxy)
Diphenylmethane, 4.4°-di(p-aminofuyunoxy)diphenylmethane, 2,5-diaminotoluene, 2
.. 4-diaminoxylene, diaizumi nodulene, 1,5-
Diaminonaphthalene, 2,6-diapolinonaphthalene, etc. are mentioned.
本発明のボジ型感光性ボリイ粟ド組或物は、以上のよう
な構造の繰り返し単位を含有するものであり、一般式〔
I]中のーOR,31内のRが水素原子または
ニルオキシ基の割合が5モル%以上であることを特徴と
するものである。0−ナフトキノンジアジドスルホニル
オキシ基の割合は5モル%以上、好ましくは5〜50重
量%とし、含有量が5モル%よりも少ないと、ボリマー
自体の感光性に劣るようになり、解像度の高いレリーフ
像を得ることが困難となる。The positive type photosensitive solid millet composition of the present invention contains repeating units having the above structure, and has the general formula [
-OR in [I] and R in 31 are hydrogen atoms or nyloxy groups in a proportion of 5 mol % or more. The proportion of 0-naphthoquinonediazide sulfonyloxy groups should be 5 mol% or more, preferably 5 to 50% by weight. If the content is less than 5 mol%, the polymer itself will have poor photosensitivity, resulting in a high-resolution relief. It becomes difficult to obtain images.
本発明のポジ型感光性ボリイ泉ド組或物は、例えば以下
の方法で得ることができる.
まず、上記構造を分子内に有する芳香族テトラカルボン
酸二無水物と、ヒドロキシル基を含有する芳香族ジア主
ンまたは該ジアミンと他の芳香族ジアミンとの混合物と
を略等モルで、任意の脱水縮合剤を用いて有機溶媒中に
て反応させる。有機溶媒としては、例えばN−メチル−
2−ビロリドン、ジメチルアセトアξド、ジメチルホル
ムア逅ド、ジメチルスルホキシド、ヘキサメチレンホス
ホルトリアミド、ビリジンやビリジンベルゾール、クレ
ゾール、フェノール、キシレノール等が挙げられる。場
合によっては、上記溶媒と共にヘキサン、ベンゼン、ト
ルエン、キシレン、アルコール等の汎用溶媒を併用して
もよい。脱水縮合剤としては、例えばジシクロへキシル
カルボジイミド、塩化チオニル、ジフェニルク口ロホス
フェート5、フユニルスルホン酸ジクロリド、アリルス
ルホニルクロリド等が挙げられる。また、場合により上
記脱水縮合剤と共にピリジン、トリエチルアもン、α−
ビコリン、β−ビコリン、T−ピコリン等の芳香族また
は脂肪族の第3級アξンを併用してもよい.
このようにして得られたポリイミド前駆体組或物中のヒ
ドロキシル基を0−ナフトキノンジアジドスルホニルク
ロリドおよび第三級ア逅ンにより0−ナフトキノンジア
ジドスルホニルオキシ化し、ボリイξド前駆体組底物と
する。なお、同様に、予め0−ナフトキノンジアジドス
ルホニルオキシ基を導入した芳香族ジアミン戒分と芳香
族テトラカルボン酸二無水物とを反応させることによっ
て前駆体組底物が得られることは云うまでもない。The positive-working photosensitive polyimide composition of the present invention can be obtained, for example, by the following method. First, an aromatic tetracarboxylic dianhydride having the above structure in the molecule and an aromatic diamine containing a hydroxyl group or a mixture of the diamine and another aromatic diamine are mixed in approximately equal moles to any desired amount. The reaction is carried out in an organic solvent using a dehydration condensation agent. Examples of organic solvents include N-methyl-
Examples thereof include 2-pyrrolidone, dimethylacetate, dimethylformamide, dimethylsulfoxide, hexamethylenephosphortriamide, pyridine, pyridinebersol, cresol, phenol, and xylenol. In some cases, a general-purpose solvent such as hexane, benzene, toluene, xylene, alcohol, etc. may be used in combination with the above solvent. Examples of the dehydration condensation agent include dicyclohexylcarbodiimide, thionyl chloride, diphenyl chloride phosphate 5, phenylsulfonic acid dichloride, allylsulfonyl chloride, and the like. In addition, in some cases, pyridine, triethylamone, α-
Aromatic or aliphatic tertiary amines such as vicoline, β-vicoline, and T-picoline may be used in combination. The hydroxyl groups in the polyimide precursor assembly thus obtained are 0-naphthoquinonediazide sulfonyloxygenated with 0-naphthoquinonediazide sulfonyl chloride and a tertiary amine to obtain a polyimide precursor assembly. . In addition, it goes without saying that a precursor composite can be similarly obtained by reacting an aromatic diamine component into which a 0-naphthoquinonediazide sulfonyloxy group has been introduced in advance with an aromatic tetracarboxylic dianhydride. .
上記のようにして得られたボリイξド前駆体組底物は、
常法である加熱イξド化もしくは無水酢酸とピリジンに
よる化学イもド化によってイξド転化を行ない、本発明
の感光性ポリイ逅ド組戊物とする。The solid ξ-doped precursor assembly obtained as described above is
The photosensitive polyide composite of the present invention is obtained by carrying out the ξ-d conversion using a conventional heating method or chemical hydration using acetic anhydride and pyridine.
本発明のポリイミド組或物は、以上のようにボリマー骨
格を特定構造に設計しているので、有機溶剤に対する溶
解性が極めて良好となり、例えばT−プチロラクトン、
ジグライム、トリグライム、シクロヘキサノン、ジオキ
サン、メチルセルソルブ、エチルセルソルブ、クロロホ
ルム等の汎用有機溶剤に溶解できるものである。Since the polyimide composition of the present invention has a polymer skeleton designed to have a specific structure as described above, it has extremely good solubility in organic solvents, such as T-butyrolactone,
It can be dissolved in general-purpose organic solvents such as diglyme, triglyme, cyclohexanone, dioxane, methyl cellosolve, ethyl cellosolve, and chloroform.
本発明のボジ型感光性ポリイミド組或吻は、上記一般式
〔I〕の感光性ポリイミドを含有してなるものであり、
光分解性プロトン発生剤を配合して使用に供する。この
ような光分解性プロトン発生剤としては公知の物質が使
用でき、例えばジアリルスルホニウム塩(Arzl”
X − )、トリアリルスルホニウム塩(ArzS+χ
−)、ジアルキルフェナシルスルホニウム塩、アリルジ
アゾニウム塩(^rN,” X − ) 、芳香族テト
ラカルボン酸エステル、芳香族スルホン酸エステル、ニ
トロベンジルエステル、芳香族スルファミドなどが用い
られ、これらは一種類もしくは二種類以上組み合わせて
使用する。これらのプロトン発生剤は前記ボリイ泉ドに
対してl〜50重量%、好ましくは5〜15重量%の範
囲で配合する。配合量が少ない場合は、酸加水分解速度
が遅くなって感度が低下し、また多い場合は、感光液そ
のものの安定性において好ましくない。The positive type photosensitive polyimide composition of the present invention contains the photosensitive polyimide of the above general formula [I],
A photodegradable proton generator is blended and used. Known substances can be used as such photodegradable proton generators, such as diallylsulfonium salt (Arzl"
X − ), triallylsulfonium salt (ArzS+χ
-), dialkylphenacylsulfonium salts, allyldiazonium salts (^rN," Alternatively, two or more types of proton generators are used in combination.These proton generators are blended in an amount of 1 to 50% by weight, preferably 5 to 15% by weight, based on the aforementioned Bolisendo.When the amount blended is small, acid hydration is used. The decomposition rate slows down, resulting in a decrease in sensitivity, and if the amount is large, it is unfavorable for the stability of the photosensitive solution itself.
本発明のボジ型感光性ボリイξド組或吻を用いて画像を
形戒する方法の一例を以下に示す。An example of a method of forming an image using the positive type photosensitive solid body ξ-domain assembly or proboscis of the present invention will be shown below.
まず該ポリイ幾ドに光分解性プロトン発生剤を添加し、
有機溶剤に溶解させて感光溶液を調製し、基材上に塗布
する。次に形成された塗膜を乾燥したのち、通常のフォ
トマスクを通して露光を行なう。First, a photodegradable proton generator is added to the polyamide,
A photosensitive solution is prepared by dissolving it in an organic solvent and applied onto a substrate. Next, after drying the formed coating film, it is exposed to light through an ordinary photomask.
露光後、照射部を除去すべく浸漬法やスプレー法などを
用いて現像を行なう。この際に用いる現像液としては、
露光膜を適当な時間内で完全に溶解除去しうるものがよ
く、水酸化ナトリウム、水酸化カリウム等の無機アルカ
リ水溶液、もしくはプロビルアもン、プチルアミン、モ
ノエタノールアミン、トリメチルアンモニウムハイドラ
イド、エチレンジアミン、トリメチレンジアミン等の有
機ジアもン化合物等を単独で、または2種以上混合して
用いる。場合によっては、これらのアミン化合物にメタ
ノール、エタノール、プロバノール、エチレングリコー
ル、エチルセルソルブ、プチルセルソルブ、ジエチレン
グリコール、エチルカルビトール、プチルカルビトール
、水等のボリイξドに対する貧溶媒を混合してもよい。After exposure, development is performed using a dipping method, a spray method, or the like to remove the irradiated area. The developer used in this case is
It is best to use a solution that can completely dissolve and remove the exposed film within a suitable amount of time, such as an aqueous inorganic alkali solution such as sodium hydroxide or potassium hydroxide, or probylamine, butylamine, monoethanolamine, trimethylammonium hydride, ethylenediamine, trimethylene. Organic diamine compounds such as diamines are used alone or in combination of two or more. In some cases, these amine compounds may be mixed with a poor solvent for the polyide, such as methanol, ethanol, probanol, ethylene glycol, ethyl cellosolve, butyl cellosolve, diethylene glycol, ethyl carbitol, butyl carbitol, water, or the like.
現像後、リンス液にて洗浄することにより、所望のポリ
イミドパターン(画像)を得ることができる。リンス液
としては、メタノール、エタノール、水、酢酸イソアミ
ルなどの1種または2種以上が用いられる。また、現像
液として有機溶剤、例えばクロロホルム、塩化メチレン
などを用いるとネガパターンを形或することもできる。After development, a desired polyimide pattern (image) can be obtained by washing with a rinsing solution. As the rinsing liquid, one or more of methanol, ethanol, water, isoamyl acetate, etc. can be used. Further, a negative pattern can be formed by using an organic solvent such as chloroform or methylene chloride as a developer.
く発明の効果〉
本発明のボジ型感光性ポリイミド組戒物は、感光性基で
あるO−ナフトキノンジアジドスルホニルオキシ基を主
鎖中に導入した特定構造を有するので、光照射に伴い0
−ナフトキノンジアジドスルホニルオキシ基が加水分解
され、アルカリ可溶性に変化する,その結果、従来のボ
ジ型感光性ポリイミド組或物では達戒できなかった微細
パターンの形或が可能となるのである。Effects of the Invention The positive type photosensitive polyimide composition of the present invention has a specific structure in which an O-naphthoquinonediazide sulfonyloxy group, which is a photosensitive group, is introduced into the main chain.
- The naphthoquinonediazide sulfonyloxy group is hydrolyzed and becomes alkali-soluble. As a result, it becomes possible to form fine patterns that could not be achieved with conventional positive-type photosensitive polyimide compositions.
さらに、溶剤可溶性であるので、イミド化工程における
高温加熱処理の必要がなく、体積収縮の少ない寸法安定
性に優れたレリーフ像が得られる.また、一般式〔I〕
中のO−ナフトキノンジアジドスルホニルオキシ基の割
合を制御することによって、ネガ型のレリーフ像を得る
ことも可能である。Furthermore, since it is solvent soluble, there is no need for high-temperature heat treatment in the imidization process, and relief images with excellent dimensional stability and little volume shrinkage can be obtained. Also, general formula [I]
It is also possible to obtain a negative relief image by controlling the proportion of O-naphthoquinonediazide sulfonyloxy groups therein.
従って、本発明のポリイミド組戒物は半導体工業におけ
る固体素子への保護膜や絶縁膜、バッシベーション膜な
との形戒のための耐熱性材料やフォトレジストとして好
適に用いることができるものである。Therefore, the polyimide composition of the present invention can be suitably used as a heat-resistant material or photoresist for forming protective films, insulating films, and passivation films for solid-state devices in the semiconductor industry. .
く実施例〉
以下に実施例を示し、本発明をさらに具体的に説明する
。EXAMPLES> The present invention will be explained in more detail with reference to Examples below.
実施例1〜3および比較例l〜2
前記一般式(1)中のAR+.ARzおよびRを第1表
中の残基とした芳香族テトラカルボン酸二無水物および
芳香族ジアミンとを略等モルとなるようにNMP中にて
25゜Cにて反応させてポリイミド前駆体を得た。次い
で、この溶液を1 9 0 ’Cまで2時間かけて昇温
し、さらに6時間攪拌してポリイξド溶液を得た。Examples 1 to 3 and Comparative Examples 1 to 2 AR+. in the general formula (1). Aromatic tetracarboxylic dianhydride and aromatic diamine in which ARz and R are the residues in Table 1 are reacted in approximately equimolar amounts in NMP at 25°C to form a polyimide precursor. Obtained. Next, the temperature of this solution was raised to 190'C over 2 hours, and the mixture was further stirred for 6 hours to obtain a polyide solution.
この溶液を0゜Cに維持しながら、0−ナフトキノンジ
アジドスルホニルクロリドおよびトリエチルアくンを所
定量添加して、室温下で2時間反応させた後、反応液を
貧溶媒に投入して0−ナフトキノンジアジドスルホニル
オキシ基含有のボリイξドを得た。While maintaining this solution at 0°C, predetermined amounts of 0-naphthoquinonediazide sulfonyl chloride and triethyl chloride were added, and the reaction was allowed to proceed at room temperature for 2 hours. A polyide ξ-do containing a quinonediazide sulfonyloxy group was obtained.
得られたボリイξドをジグライム中に固形分濃度が30
重量%となるように溶解して感光溶液とした。この溶液
を乾燥厚3μmとなるようにシリコーンウエハ上にスピ
ンコートし、石英マスクを通して250Wの超高圧水銀
灯を用いて光源から30cmの所から3分間真空密着露
光を行なった。The obtained solid ξ-d was mixed into diglyme with a solid concentration of 30
A photosensitive solution was prepared by dissolving the solution in an amount of % by weight. This solution was spin-coated onto a silicone wafer to a dry thickness of 3 μm, and vacuum contact exposure was performed for 3 minutes from a position 30 cm from the light source using a 250 W ultra-high pressure mercury lamp through a quartz mask.
トリメチルアンモニウムハイドライドを用い、90秒間
浸漬法にて現像を行ないJそののちリンス液として水を
用いて20秒間浸漬、乾燥した。Development was carried out by dipping for 90 seconds using trimethylammonium hydride, followed by dipping for 20 seconds using water as a rinse agent and drying.
このようにして得られたレリーフ像を電子顕微鏡にて観
察したところ、各実施例品共にアスベクト比1. 0の
3μmのラインを解像していた。また、このレリーフ像
を3 5 0 ”Cで30分間加熱処理したところ、体
積収縮率は10%以下であった。When the relief images obtained in this manner were observed using an electron microscope, the aspect ratio of each example product was 1. It was able to resolve the 0 3 μm line. Further, when this relief image was heat-treated at 350''C for 30 minutes, the volumetric shrinkage rate was 10% or less.
なお、実施例3ではネガ型のレリーフ像が得られ、露光
時間を1〜60分の範囲で変化させても同様のレリーフ
像が得られ、体積収縮率は20〜25%であった.
一方、比較例1では0−ナフトキノンジアジドスルホニ
ルオキシ基の含有量が少ないので、露光時間を30分、
現像時間を60分以上としたが、長時間にわたる浸漬の
ためにレリーフ像が浸食され、良好なレリーフ像を得る
ことができなかった.また、比較例2では露光時間を6
0分以上としても、現像時にポリイミドが膨潤するだけ
で、レリーフ像を得ることができなかった。In addition, in Example 3, a negative relief image was obtained, and even when the exposure time was varied in the range of 1 to 60 minutes, similar relief images were obtained, and the volume shrinkage rate was 20 to 25%. On the other hand, in Comparative Example 1, the content of 0-naphthoquinonediazide sulfonyloxy group was small, so the exposure time was 30 minutes.
Although the development time was set to 60 minutes or more, the relief image was eroded due to the long immersion, and a good relief image could not be obtained. In addition, in Comparative Example 2, the exposure time was 6
Even if the time was 0 minutes or more, the polyimide only swelled during development and no relief image could be obtained.
(以下、余白)(Hereafter, margin)
Claims (1)
r_2は芳香環のオルソ位またはメタ位の少なくとも1
つの位置にo−ナフトキノンジアジドスルホニルオキシ
基を有する2価の芳香族炭化水素残基である)で表わさ
れる繰り返し単位を有し、Rが水素原子または▲数式、
化学式、表等があります▼であり、後者 の割合が5モル%以上であることを特徴とするポジ型感
光性ポリイミド組成物。(1) The following general formula [I], ▲Mathematical formulas, chemical formulas, tables, etc.▼...[I] (However, in the formula, Ar_1 is a tetravalent aromatic hydrocarbon residue, A
r_2 is at least one ortho or meta position of the aromatic ring
is a divalent aromatic hydrocarbon residue having an o-naphthoquinonediazide sulfonyloxy group at two positions), and R is a hydrogen atom or ▲ formula,
A positive photosensitive polyimide composition having a chemical formula, table, etc. ▼, and characterized in that the proportion of the latter is 5 mol% or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19609489A JPH0358048A (en) | 1989-07-27 | 1989-07-27 | Positive type photosensitive polyiide composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19609489A JPH0358048A (en) | 1989-07-27 | 1989-07-27 | Positive type photosensitive polyiide composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0358048A true JPH0358048A (en) | 1991-03-13 |
Family
ID=16352115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19609489A Pending JPH0358048A (en) | 1989-07-27 | 1989-07-27 | Positive type photosensitive polyiide composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0358048A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0554040A2 (en) * | 1992-01-27 | 1993-08-04 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin compositions, their preparation and use |
JP2006249421A (en) * | 2005-02-14 | 2006-09-21 | Shin Etsu Chem Co Ltd | Photosensitive resin and method of preparing the same |
US8298747B2 (en) | 2007-03-12 | 2012-10-30 | Hitachi Chemical Dupont Microsystems, Ltd. | Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part |
US8420291B2 (en) | 2007-10-29 | 2013-04-16 | Hitachi Chemical Dupont Microsystems, Ltd. | Positive photosensitive resin composition, method for forming pattern, electronic component |
US8758977B2 (en) | 2005-09-22 | 2014-06-24 | Hitachi Chemical Dupont Microsystems, Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
-
1989
- 1989-07-27 JP JP19609489A patent/JPH0358048A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0554040A2 (en) * | 1992-01-27 | 1993-08-04 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin compositions, their preparation and use |
EP0554040A3 (en) * | 1992-01-27 | 1993-12-29 | Shinetsu Chemical Co | Photosensitive resin compositions, their preparation and use |
JP2006249421A (en) * | 2005-02-14 | 2006-09-21 | Shin Etsu Chem Co Ltd | Photosensitive resin and method of preparing the same |
US8758977B2 (en) | 2005-09-22 | 2014-06-24 | Hitachi Chemical Dupont Microsystems, Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
US8871422B2 (en) | 2005-09-22 | 2014-10-28 | Hitachi Chemical Dupont Microsystems Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
US8298747B2 (en) | 2007-03-12 | 2012-10-30 | Hitachi Chemical Dupont Microsystems, Ltd. | Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part |
US8420291B2 (en) | 2007-10-29 | 2013-04-16 | Hitachi Chemical Dupont Microsystems, Ltd. | Positive photosensitive resin composition, method for forming pattern, electronic component |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2931143B2 (en) | Heat-resistant positive photoresist composition, photosensitive substrate using the same, and pattern forming method | |
TWI490652B (en) | Positive photosensitive resin composition, cured layer, protecting layer, insulating layer, and semiconductor device and display device using same | |
DE60035482T2 (en) | POSITIVELY WORKING LIGHT-SENSITIVE POLYIMIDE COMPOSITION COMPOSITION | |
JP3709997B2 (en) | Heat resistant negative photoresist composition, photosensitive substrate, and negative pattern forming method | |
JPH03763A (en) | Positive type photosensitive polyimide composition | |
EP0378156A2 (en) | Positively photosensitive polyimide composition | |
WO2022033364A1 (en) | Photoresist and method for patterning imine material | |
JP2003121998A (en) | Photosensitive polymer composition, method for producing pattern and electronic parts | |
JPH0539281A (en) | Di-substituted aromatic dianhydride and polyimide prepared therefrom | |
JP4942552B2 (en) | Polyamide and positive photosensitive resin composition | |
TW201629630A (en) | Photosensitive resin composition, dry film and cured product thereof, electronic component or optical product comprising cured product, and adhesive comprising photosensitive resin composition | |
JPH0358048A (en) | Positive type photosensitive polyiide composition | |
JP4752902B2 (en) | Method for reducing impurities in insulating film or protective film | |
JP2006047627A (en) | Photosensitive resin precursor composition | |
JP3093055B2 (en) | Heat resistant negative photoresist composition, photosensitive substrate, and negative pattern forming method | |
JP2009175651A (en) | Positive photosensitive resin composition, cured layer, protecting layer, insulating layer and semiconductor device and display therewith | |
JPH05281717A (en) | Photosensitive material and heat resistant positive type photoresist composition containing this material and photosensitive base material as well as pattern forming method | |
JP2011133615A (en) | Positive photosensitive resin composition | |
WO2010044275A1 (en) | Positive-type photosensitive resin composition, cured film, protective film, insulating film and semiconductor device or display device utilizing the cured film, the protective film or the insulating film, and method for forming resist film | |
JPH06161110A (en) | Heat resistant positive type photoresist composition, photosensitive base material using it and pattern forming method | |
JP3460679B2 (en) | Positive photosensitive resin precursor composition | |
JP4341797B2 (en) | Positive photosensitive resin composition and pattern forming method using the same | |
JP2971188B2 (en) | Positive photosensitive resin composition | |
JPS62179563A (en) | Photosensitive polymer composition | |
JPH07134414A (en) | Heat resistant positive photoresist composition |