WO2022033364A1

WO2022033364A1 - Photoresist and method for patterning imine material

Info

Publication number: WO2022033364A1
Application number: PCT/CN2021/110464
Authority: WO
Inventors: 徐宏; 何向明; 王倩倩
Original assignee: 无锡华睿芯材科技有限公司
Priority date: 2020-08-13
Filing date: 2021-08-04
Publication date: 2022-02-17
Also published as: CN111880371B; CN111880371A

Abstract

A photoresist and a method for patterning an imine photoresist material. The photoresist comprises: an amino compound, an aldehyde group compound, an acid generator and a solvent, wherein the acid generator can be decomposed under ultraviolet light to form a photoacid catalyst, and the photoacid catalyst can catalyze the condensation reaction of the amino compound and the aldehyde group compound to form an imine polymer.

Description

Patterning method of photoresist and imine materials

Related applications

This application claims the priority of the Chinese patent application filed on August 13, 2020, the application number is 202010815574X, and the title is "Patterning method of photoresist and imine materials", which is hereby incorporated by reference in its entirety.

technical field

The present application relates to the technical field of photoresist, and in particular, to a patterning method of photoresist and imine materials.

Background technique

The main chain of polyimide contains an imide structure, which has the advantages of high heat resistance and electrical insulation. Usually polyimide has no photosensitive properties, and some photosensitive materials must be added to be used as a photoresist in the processing of microelectronic devices.

The most classic synthesis method of polyimide is a two-step method. First, the polyamic acid is pre-prepared by diamine and dianhydride, and then it is prepared by high temperature treatment or chemical imidization. The preparation process is relatively complicated. And the common polyimide photoresist mostly adopts the diazonaphthoquinone system, and there is little research on the photoacid catalyzed chemically amplified polyimide photoresist.

SUMMARY OF THE INVENTION

Based on this, we propose a photoresist based on photoacid-catalyzed imine materials and its patterning method.

A photoresist, comprising: an amino compound, an aldehyde-based compound, an acid generator and a solvent, the acid generator can be decomposed under ultraviolet light to form a photoacid catalyst, and the photoacid catalyst can catalyze the amino compound and all The aldehyde-based compound undergoes a condensation reaction to form an imine polymer.

Optionally, the mass percentage of the amino compound in the photoresist is 0.4% to 30%, the mass percentage of the aldehyde compound in the photoresist is 0.5% to 30%, the production The mass percentage of the acid agent in the photoresist is 0.01%-8%.

Optionally, the acid generator is selected from N-hydroxynaphthalimide trifluoromethanesulfonic acid, N-hydroxysuccinimide trifluoromethanesulfonic acid and N-hydroxyo-phthalimide p-toluenesulfonic acid one or more of.

Optionally, the photoacid catalyst is selected from sulfonic acids.

Optionally, the ratio of the amino compound to the aldehyde group compound, in terms of the molar ratio of the amino group to the aldehyde group, is 5/1 to 1/5.

Optionally, the amino compound is selected from 1,4-diaminocyclohexane, p-phenylenediamine, 2-trifluoromethyl-p-phenylenediamine, 4,4'-diaminobiphenyl, 3,4' -Diaminodiphenyl ether, 4,4'-diamino-3,3'-dimethylbiphenylmethane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3,5-tris One or more of p-aminophenylbenzene, tetra-p-aminophenylmethane and 1,3,5,7-tetraaminoadamantane.

Optionally, the aldehyde-based compound is selected from the group consisting of terephthalaldehyde, terephthalaldehyde, 2,4-dimethoxy terephthalaldehyde, 2,4-diethoxy terephthalaldehyde and 2,4 - one or more of dipropoxyterephthalaldehyde.

Optionally, the solvent is selected from 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, acetone, N,N-dimethylformamide and N,N- One or more of dimethylacetamide.

Optionally, the solid content in the photoresist is 1.0% to 45.0% by mass, preferably 5% to 30%.

A photoresist, comprising an amino compound, an aldehyde-based compound, an acid generator and a solvent, wherein,

The acid generator is selected from one of N-hydroxynaphthalimide trifluoromethanesulfonic acid, N-hydroxysuccinimide trifluoromethanesulfonic acid and N-hydroxy-o-phenylimide-p-toluenesulfonic acid or variety;

The amino compound is selected from 1,4-diaminocyclohexane, p-phenylenediamine, 2-trifluoromethyl-p-phenylenediamine, 4,4'-diaminobiphenyl, 3,4'-diaminodiamine Phenyl ether, 4,4'-diamino-3,3'-dimethylbiphenylmethane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3,5-tris-p-aminophenyl one or more of benzene, tetraaminophenylmethane, and 1,3,5,7-tetraaminoadamantane; and

The aldehyde-based compound is selected from the group consisting of m-phthalaldehyde, terephthalaldehyde, 2,4-dimethoxyterephthalaldehyde, 2,4-diethoxyterephthalaldehyde and 2,4-dipropoxy One or more of the base terephthalaldehyde.

A patterning method for imine materials, comprising the following steps:

coating the photoresist on the surface of the substrate, removing the solvent in the photoresist, and forming a pre-film layer on the surface of the substrate;

The exposure operation is performed by irradiating the ultraviolet light source on the pre-film-forming layer of the substrate through a mask with a preset pattern;

The developer is applied on the exposed pre-film layer, so that the unexposed area on the pre-film layer that is blocked by the mask is dissolved in the developer, while the exposed area of the pre-film layer forms an imine polymer and remains on the base.

Optionally, the exposure dose of the exposure operation under the ultraviolet light source is 20 mJ/cm ² to 1800 mJ/cm ² .

Optionally, the developer is selected from 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, butyl acetate, acetone, N,N-dimethylformamide And one or more of N,N-dimethylacetamide.

Optionally, the substrate is selected from a silicon plate.

The present invention provides a new application of imine polymer material as photoresist. The photoresist of the present invention is a photoresist system based on amino group and aldehyde-based compound monomers. During patterning, the photoresist system first removes the solvent on the substrate to form a pre-layered film, and then forms a pre-layered film through the patterned mask. Under ultraviolet light irradiation, there is no obvious change in the unexposed area, and the amino group and the aldehyde-based compound monomer do not react; in the exposed area, the acid generator will decompose to form a photoacid catalyst after being irradiated. The aldehyde-based compound monomer will undergo a rapid condensation reaction, and the imine-based polymer that is insoluble in the developer will be formed by covalent bonding. The pattern was successfully transferred to the substrate surface. Using the photoresist system compound monomer to change its solubility and polarity before and after the photoreaction, it is used in the field of photolithography to prepare micro-nano structures, which greatly expands the application range of imine materials.

The photoresist of the present invention can be used for photolithography to prepare micro-nano structures, 3D printing and the like.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present disclosure more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort.

FIG. 1 is an optical microscope photograph of the photoresist pattern of Example 2 of the present invention.

FIG. 2 is an optical microscope photograph of the photoresist pattern of Example 8 of the present invention.

detailed description

In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the disclosure of this application is provided.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Embodiments of the present invention provide a photoresist, including: an amino compound, an aldehyde-based compound, an acid generator and a solvent. The acid generator can be decomposed under ultraviolet light to form a photoacid catalyst, and the photoacid catalyst can catalyze the condensation reaction of the amino compound and the aldehyde group compound to form an imine polymer.

The present invention provides a new application of imine polymer material as photoresist. The photoresist of the present invention is a photoresist system based on amino and aldehyde-based compound monomers. During patterning, the photoresist system first removes the solvent on the substrate to form a pre-layered film. Under the irradiation of ultraviolet light through the patterned mask, there is no obvious change in the unexposed area, and the amino group and the aldehyde-based compound monomer do not react; in the exposed area, the acid generator will decompose to form a photoacid catalyst after being illuminated. Under the catalysis of the photoacid catalyst, the amino group and the aldehyde-based compound monomer will undergo a rapid condensation reaction and are connected by covalent bonds to generate imine polymers that are insoluble in the developer. After development, the unexposed areas of the pre-film layer are dissolved while the exposed areas remain, thereby successfully transferring the mask pattern to the substrate surface. The photoresist system compound monomer is used in the field of photolithography to prepare the micro-nano structure by utilizing the change in solubility caused by the polarity change before and after the photoreaction.

The mass percentage of the amino compound in the photoresist may be 0.4% to 30%, the mass percentage of the aldehyde compound in the photoresist may be 0.5% to 30%, and the acid generator The mass percentage in the photoresist can be 0.01%-8%.

The amino compound may be represented by R'-NH ₂ , and the aldehyde compound may be represented by R-CHO.

The condensation reaction of amino and aldehyde-based compound monomers is shown in the following formula:

In some embodiments, the acid generator is selected from N-hydroxynaphthalimide trifluoromethanesulfonic acid, N-hydroxysuccinimide trifluoromethanesulfonic acid, and N-hydroxyphthalimide-p-toluenesulfonic acid One or more of the acids are shown in the following structural formulas (1), (2) and (3). In some embodiments, the photoacid catalyst formed by decomposing the acid generator under ultraviolet light is a sulfonic acid compound.

In some embodiments, the mass percentage of the acid generator in the photoresist may be 0.01%-0.05%, 0.05%-0.1%, 0.1%-0.5%, 0.5%-1%, 1%- 2%, 2% to 3%, 3% to 4%, 4% to 5%, 5% to 6%, 6% to 7% or 7% to 8%.

In some embodiments, the number of amino groups in the amino compound is 1-4, such as 1, 2, 3, 4. The amino compound may be represented by R'(NH ₂ ) _n , wherein n is an integer, and n=1˜4, such as 1, 2, 3, and 4. R' may include one or more substituted or unsubstituted aromatic or aliphatic rings. The substituted or unsubstituted aromatic ring or aliphatic ring may have 5 to 10 ring atoms, such as 6 ring atoms, respectively. In some embodiments, R' may include 1, 2, 3 or 4 substituted or unsubstituted benzene rings, or 1, 2, 3 or 4 substituted or unsubstituted six-membered saturated aliphatic rings. The substitution may be, for example, C1-4 alkyl or fluoroalkyl substitution. Two or more aromatic rings or aliphatic rings in R' can be connected by covalent bonds, -O-, -CH ₂ -, -C(CF ₃ ) ₂ -, C and other groups, or bridged. The amino group in the aldehyde-based compound can be directly connected to a benzene ring or an aliphatic ring.

In some embodiments, the amino compound is selected from the group consisting of 1,4-diaminocyclohexane, p-phenylenediamine, 2-trifluoromethyl-p-phenylenediamine, 4,4'-diaminobiphenyl, 3, 4'-Diaminodiphenyl ether, 4,4'-diamino-3,3'-dimethylbiphenylmethane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3,5 -One or more of tri-p-aminophenylbenzene, tetra-p-aminophenylmethane and 1,3,5,7-tetraaminoadamantane, respectively the following structural formulas (4), (5), (6), (7), (8), (9), (10), (11), (12), (13).

In some embodiments, the mass percentage of the amino compound in the photoresist is 0.4%-1%, 1%-2%, 2%-5%, 5%-10%, 10%-15%, 15% %～20%, 20%～25% or 25%～30%.

In some embodiments, the number of aldehyde groups in the aldehyde-based compound is 1-4, such as 1, 2, 3, and 4. The aldehyde-based compound can be represented by R(CHO) _n , wherein n is an integer, n=1˜4, such as 1, 2, 3, 4. R may include one or more substituted or unsubstituted aromatic or aliphatic rings. The substituted or unsubstituted aromatic ring or aliphatic ring may have 5 to 10 ring atoms, such as 6 ring atoms, respectively. In some embodiments, R can be a substituted or unsubstituted benzene ring. The substitution may be, for example, C1-4 alkyl or alkoxy substitution. The aldehyde group in the aldehyde group compound can be directly connected with the benzene ring.

In some embodiments, the aldehyde-based compound is selected from the group consisting of terephthalaldehyde, terephthalaldehyde, 2,4-dimethoxyterephthalaldehyde, 2,4-diethoxyterephthalaldehyde, and 2,4-diethoxyterephthalaldehyde. , One or more of 4-dipropoxyterephthalaldehyde, respectively shown in the following structural formulas (14), (15), (16), (17), (18).

In some embodiments, the mass percentage of the aldehyde-based compound in the photoresist is 0.5%-1%, 1%-3%, 3%-6%, 6%-10%, 10%-15%, 15% to 20%, 20% to 25% or 25% to 30%.

In some embodiments, in the photoresist, the ratio of the amino compound to the aldehyde group compound, in terms of the molar ratio of the amino group to the aldehyde group, is 5/1˜1/ 5. Specifically, the molar ratio of the amino group to the aldehyde group may be 5:1, 4:1, 3:1, 2:1, 1:1, 1:2, 1:3, 1:4 or 1:5.

In some embodiments, the solvent may be selected from 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, acetone, N,N-dimethylformamide, and N , one or more of N-dimethylacetamide.

In some embodiments, the solid content in the photoresist ranges from 1.0% to 45.0% by mass. Specifically, the solid content mass percentage in the photoresist can be 1%-5%, 5%-10%, 10%-15%, 15%-20%, 20%-25%, 25%-30%, 30% to 35%, 35% to 40% or 40% to 45%. It is preferably 5% to 30%.

An embodiment of the present invention also provides a method for patterning imine materials, comprising the following steps:

The developer is applied on the exposed pre-film layer, so that the unexposed area on the pre-film layer that is blocked by the mask is dissolved in the developer, while the exposed area of the pre-film layer forms an imine polymer and remains On the substrate, the pre-film-forming layer is developed to form a patterned imine-based polymer material.

In some embodiments, the exposure dose (=light intensity*time) for the exposure operation under the UV light source is 20mJ/cm ² to 1800mJ/cm ² . Specifically, the exposure dose may be 20mJ/cm ² -100mJ/cm ² , 100mJ/cm ² -200mJ/cm ² , 200mJ/cm ² -500mJ/cm ² , 500mJ/cm ² -1000mJ/cm ² or 1000mJ/cm ² to 1500mJ/cm ² .

In some embodiments, the developer is selected from the group consisting of 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, butyl acetate, acetone, N,N-dimethylbenzene One or more of formamide and N,N-dimethylacetamide. The developer is mainly used to dissolve unreacted amino compounds, aldehyde-based compounds and acid generators. The imines formed by exposure do not dissolve in the developer during the developing time or have a low solubility in the developer, and even if partially dissolved, the exposed area can still be covered by the imine polymer. In some embodiments, the developing temperature may be room temperature, for example, 20°C to 30°C.

In some embodiments, the substrate is selected from a silicon plate for use in integrated circuit board fabrication. Other substrates insoluble in developer can also be selected according to actual needs.

An embodiment of the present invention also provides a method for preparing an integrated circuit board, comprising the following steps:

Prepare a pre-patterned plate with a patterned imine-based material layer on a silicon substrate according to the method for patterning imine-based materials in any of the above embodiments;

By dry or wet etching the pre-patterned sheet, the regions of the silicon substrate with the imide-based material are not etched, and the regions without the imide-based material are etched.

The photoresist of the present invention has a wide range of applications, not only limited to the manufacture of microelectronics, such as the preparation of integrated circuit boards; it can also be simply used for the preparation of patterned imine materials.

The following are specific examples.

The implementation process of the following embodiments all need to be protected from light throughout the process before the development is completed.

1. Weigh an appropriate amount of amino compounds, aldehyde-based compounds and acid generators and prepare a photoresist solution with a certain concentration in a certain proportion, shake to dissolve, and filter the glue for later use.

2. Set the rotation speed and time of the glue homogenizer (related to the thickness of the coating film), spin a small amount of photoresist solution on the surface of the silicon wafer, and remove the solvent to obtain a pre-film layer.

3. Place the pre-filmed layer under an ultraviolet light source, set exposure dose = light intensity * time, and perform exposure operation through a mask with a preset pattern.

4. After the exposure is completed, take out the silicon wafer and develop it with developer at room temperature. The developer can be selected from 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, butyl acetate , one or more of acetone, N,N-dimethylformamide and N,N-dimethylacetamide. The solubility change caused by the polarity switching before and after exposure makes the unexposed areas dissolve while the exposed areas remain after development, and the mask pattern is successfully transferred to the surface of the silicon wafer.

5. After the development is completed, the silicon wafer is blown dry by a nitrogen gun and is ready for use.

6. Observe the imaging pattern under an optical microscope or a scanning electron microscope.

The composition of the photoresist composition (imine material raw material) composed of amino compound, aldehyde compound, and acid generator is as follows:

Example 1: 2% by weight of amino compounds, 2.5% by weight of aldehyde-based compounds, 0.5% by weight of acid generators, and the balance is 1,4-dioxane . Wherein, the amino compound is p-phenylenediamine, the aldehyde compound is terephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoromethanesulfonic acid.

Example 2: 2% by weight amino compound, 3.5% by weight aldehyde compound, 0.5% by weight acid generator, and the balance N,N-dimethylformaldehyde amide. Wherein, the amino compound is p-phenylenediamine, the aldehyde compound is terephthalaldehyde, and the acid generator is N-hydroxy-o-phthalimide-p-toluenesulfonic acid. The imaging pattern under the optical microscope of this embodiment is shown in FIG. 1 .

Example 3: 2% by weight of amino compound, 4.5% by weight of aldehyde-based compound, 0.5% by weight of acid generator, and the balance is acetone. Wherein, the amino compound is p-phenylenediamine, the aldehyde compound is terephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoromethanesulfonic acid.

Example 4: 6.5% by weight of amino compound, 2.5% by weight of aldehyde-based compound, 1.0% by weight of acid generator, and the balance is acetone. Wherein, the amino compound is p-1,3,5-tris-p-aminophenylbenzene, the aldehyde compound is terephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoromethanesulfonic acid.

Example 5: 7% by weight of amino compound, 2.5% by weight of aldehyde-based compound, 0.5% by weight of acid generator, and the balance is o-dichlorobenzene. Wherein, the amino compound is tetra-p-aminophenylmethane, the aldehyde compound is terephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoromethanesulfonic acid.

Example 6: 3% by weight of amino compound, 2.5% by weight of aldehyde-based compound, 0.5% by weight of acid generator, and the balance is acetone. Wherein, the amino compound is 1,3,5-tris-p-aminophenylbenzene, the aldehyde compound is 2,5-dimethoxyterephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoro Methanesulfonic acid.

Example 7: 3.2% by weight of amino compounds, 2.5% by weight of aldehyde-based compounds, 0.6% by weight of acid generator, and the balance being acetone. Wherein, the amino compound is tetra-p-aminophenylmethane, the aldehyde compound is 2,5-dipropoxyterephthalaldehyde, and the acid generator is N-hydroxysuccinimide trifluoromethanesulfonic acid.

Example 8: 3.5% by weight of amino compounds, 2.5% by weight of aldehyde-based compounds, 0.6% by weight of acid generator, and the balance being acetone. Wherein, the amino compound is 1,3,5-tris-p-aminophenylbenzene, the aldehyde compound is 2,5-dipropoxyterephthalaldehyde, and the acid generator is N-hydroxynaphthalimide trifluoro Methanesulfonic acid. The imaging pattern under the optical microscope of this embodiment is shown in FIG. 2 .

The specific components of Examples 1 to 8 are shown in Table 1 below.

Table 1

The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

The above-mentioned embodiments only represent several embodiments of the present application, and the descriptions thereof are relatively specific and detailed, but should not be construed as a limitation on the scope of the patent application. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the scope of protection of the patent of the present application shall be subject to the appended claims.

Claims

A photoresist, characterized in that it comprises: an amino compound, an aldehyde-based compound, an acid generator and a solvent, the acid generator can be decomposed under ultraviolet light to form a photoacid catalyst, and the photoacid catalyst can catalyze the The amino compound and the aldehyde-based compound undergo a condensation reaction to form an imine-based polymer.
The photoresist according to claim 1, wherein the mass percentage of the amino compound in the photoresist is 0.4% to 30%, and the mass percentage of the aldehyde compound in the photoresist is 0.4% to 30%. The percentage is 0.5%-30%, and the mass percentage of the acid generator in the photoresist is 0.01%-8%.
The photoresist according to claim 1 or 2, wherein the acid generator is selected from the group consisting of N-hydroxynaphthalimide trifluoromethanesulfonic acid, N-hydroxysuccinimide trifluoromethanesulfonic acid and One or more of N-hydroxyphthalimide p-toluenesulfonic acid.
The photoresist according to any one of claims 1 to 3, wherein the photoacid catalyst is selected from sulfonic acid compounds.
The photoresist according to any one of claims 1 to 4, wherein the ratio of the amino compound to the aldehyde group compound, in terms of the molar ratio of the amino group to the aldehyde group, is 5/1 to 1/5.
The photoresist according to any one of claims 1 to 5, wherein the amino compound is selected from the group consisting of 1,4-diaminocyclohexane, p-phenylenediamine, and 2-trifluoromethyl-terephthalene Amine, 4,4'-diaminobiphenyl, 3,4'-diaminodiphenyl ether, 4,4'-diamino-3,3'-dimethylbiphenylmethane, 2,2-bis(4 -Aminophenyl) one or more of hexafluoropropane, 1,3,5-tris-p-aminophenylbenzene, tetra-p-aminophenylmethane and 1,3,5,7-tetraaminoadamantane.
The photoresist according to any one of claims 1 to 6, wherein the aldehyde-based compound is selected from the group consisting of terephthalaldehyde, terephthalaldehyde, 2,4-dimethoxyterephthalaldehyde, One or more of 2,4-diethoxyterephthalaldehyde and 2,4-dipropoxyterephthalaldehyde.
The photoresist according to any one of claims 1 to 7, wherein the solvent is selected from 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, One or more of acetone, N,N-dimethylformamide and N,N-dimethylacetamide.
The photoresist according to any one of claims 1 to 8, wherein the solid content in the photoresist is 1.0% to 45.0% by mass, preferably 5% to 30%.
A kind of photoresist is characterized in that, comprises: amino compound, aldehyde compound, acid generator and solvent, wherein,

The acid generator is selected from one of N-hydroxynaphthalimide trifluoromethanesulfonic acid, N-hydroxysuccinimide trifluoromethanesulfonic acid and N-hydroxy-o-phenylimide-p-toluenesulfonic acid or variety;

The amino compound is selected from 1,4-diaminocyclohexane, p-phenylenediamine, 2-trifluoromethyl-p-phenylenediamine, 4,4'-diaminobiphenyl, 3,4'-diaminodiamine Phenyl ether, 4,4'-diamino-3,3'-dimethylbiphenylmethane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3,5-tris-p-aminophenyl one or more of benzene, tetra-aminophenylmethane, and 1,3,5,7-tetraaminoadamantane; and

The aldehyde-based compound is selected from the group consisting of m-phthalaldehyde, terephthalaldehyde, 2,4-dimethoxyterephthalaldehyde, 2,4-diethoxyterephthalaldehyde and 2,4-dipropoxy One or more of the base terephthalaldehyde.
The photoresist according to claim 10, wherein the mass percentage of the amino compound in the photoresist is 0.4% to 30%, and the mass percentage of the aldehyde compound in the photoresist is 0.4% to 30%. The percentage is 0.5%-30%, and the mass percentage of the acid generator in the photoresist is 0.01%-8%.
The photoresist according to claim 10 or 11, wherein the ratio of the amino compound to the aldehyde group compound, in terms of the molar ratio of the amino group to the aldehyde group, is 5/1 ~1/5.
The photoresist according to any one of claims 10 to 12, wherein the solvent is selected from the group consisting of 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate, One or more of acetone, N,N-dimethylformamide and N,N-dimethylacetamide.
The photoresist according to any one of claims 10 to 13, wherein the solid content in the photoresist is 1.0% to 45.0% by mass, preferably 5% to 30%.
A method for patterning imine materials, comprising the following steps:

coating the photoresist according to any one of claims 1 to 14 on the surface of the substrate, removing the solvent in the photoresist, and forming a pre-film layer on the surface of the substrate;

irradiating the ultraviolet light source on the pre-film-forming layer of the substrate through a mask with a preset pattern to perform exposure operation;

The developer is applied on the exposed pre-film layer, so that the unexposed area on the pre-film layer covered by the mask is dissolved in the developer, while the exposed area of the pre-film layer forms an imine polymer and remains on the base.
The method for patterning imine materials according to claim 15, wherein the exposure dose of the exposure operation under the ultraviolet light source is 20 mJ/cm 2 to 1800 mJ/cm 2 .
The method for patterning imine materials according to claim 15, wherein the developer is selected from the group consisting of 1,4-dioxane, trimethylbenzene, o-dichlorobenzene, propylene glycol methyl ether acetate , butyl acetate, one or more of acetone, N,N-dimethylformamide and N,N-dimethylacetamide.
The method for patterning imine materials according to claim 15, wherein the substrate is selected from a silicon plate.