JPH0356627B2 - - Google Patents
Info
- Publication number
- JPH0356627B2 JPH0356627B2 JP59142288A JP14228884A JPH0356627B2 JP H0356627 B2 JPH0356627 B2 JP H0356627B2 JP 59142288 A JP59142288 A JP 59142288A JP 14228884 A JP14228884 A JP 14228884A JP H0356627 B2 JPH0356627 B2 JP H0356627B2
- Authority
- JP
- Japan
- Prior art keywords
- ketone
- developing
- resist
- solvent
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59142288A JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59142288A JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6122341A JPS6122341A (ja) | 1986-01-30 |
| JPH0356627B2 true JPH0356627B2 (enExample) | 1991-08-28 |
Family
ID=15311888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59142288A Granted JPS6122341A (ja) | 1984-07-11 | 1984-07-11 | ネガ型レジストの現像方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6122341A (enExample) |
-
1984
- 1984-07-11 JP JP59142288A patent/JPS6122341A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6122341A (ja) | 1986-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5366851A (en) | Device fabrication process | |
| CA1088737A (en) | High energy radiation curable resist and preparatory process | |
| EP0060585B1 (en) | Method of applying a resist pattern on a substrate, and resist material mixture | |
| US3987215A (en) | Resist mask formation process | |
| JPH0546535B2 (enExample) | ||
| US3387976A (en) | Photopolymer and lithographic plates | |
| US5688634A (en) | Energy sensitive resist material and process for device fabrication using the resist material | |
| US4346163A (en) | Resist for use in forming a positive pattern with a radiation and process for forming a positive pattern with radiation | |
| JPS60501777A (ja) | 二酸化ケイ素系グラフト重合リソグラフマスク | |
| EP0030107B1 (en) | Process for forming resist pattern | |
| JPH0356627B2 (enExample) | ||
| US3916035A (en) | Epoxy-polymer electron beam resists | |
| JPH0241740B2 (enExample) | ||
| US4302529A (en) | Process for developing a positive electron resist | |
| JPH0330852B2 (enExample) | ||
| JPH07225473A (ja) | デバイスの製造方法 | |
| JPS58114032A (ja) | パタ−ン形成方法 | |
| JPS647651B2 (enExample) | ||
| JPH03148659A (ja) | 電離放射線感応性ネガ型レジスト材料組成物 | |
| JPH01217341A (ja) | ポジ型電子線レジストのパターン形成方法 | |
| JPH0644153B2 (ja) | 放射線感受性ネガ型レジスト材料 | |
| JPS6091350A (ja) | 電離放射線感応ネガ型レジスト | |
| JPH0331250B2 (enExample) | ||
| JPS647375B2 (enExample) | ||
| JPS6058462B2 (ja) | ネガ型レジスト材料 |