JPH0355483B2 - - Google Patents

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Publication number
JPH0355483B2
JPH0355483B2 JP7679487A JP7679487A JPH0355483B2 JP H0355483 B2 JPH0355483 B2 JP H0355483B2 JP 7679487 A JP7679487 A JP 7679487A JP 7679487 A JP7679487 A JP 7679487A JP H0355483 B2 JPH0355483 B2 JP H0355483B2
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JP
Japan
Prior art keywords
group
photocurable resin
electron
radical generator
substituent
Prior art date
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Expired
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JP7679487A
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Japanese (ja)
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JPS63243102A (en
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Priority to JP7679487A priority Critical patent/JPS63243102A/en
Publication of JPS63243102A publication Critical patent/JPS63243102A/en
Publication of JPH0355483B2 publication Critical patent/JPH0355483B2/ja
Granted legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymerisation Methods In General (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

産業䞊の利甚分野 本発明は新芏な光硬化性暹脂組成物に関するも
のである。さらに詳しくいえば、本発明は、特に
レヌザヌビヌム走査による画像圢成材料ずしお奜
適な、特定の光重合開始剀を含む光硬化性暹脂組
成物に関するものである。 埓来の技術 近幎、光硬化性暹脂組成物は、䟋えばフオトレ
ゞスト、むンキ、塗料、ワニス、印刷補版などの
材料はもずより、レヌザヌ光を甚いる画像圢成材
料や銀塩に代る感光材料などずしおも泚目されお
いる。 このような材料ずしお甚いられる光硬化性暹脂
組成物においおは、感光速床をできるだけ高める
こずが、その性胜にず぀お重芁なこずであり、そ
のため倚くの研究がなされおいる。しかしなが
ら、これたでの研究は、その倚くが玫倖線に掻性
な光重合開始剀に関するものであ぀お、レヌザヌ
光甚ずしおの感光特性は埓来のものでは䞍十分で
あり、したが぀お、レヌザヌビヌム走査によ぀お
画像圢成を行うためには、感光波長領域を拡倧
し、か぀感光速床を飛躍的に増倧させる必芁があ
぀た。 埓来、可芖光線に感光する光重合性暹脂に関し
おは、皮々の組成物、䟋えば゚チレン系䞍飜和化
合物ずトリアゞン環が共圹した、少なくずも個
のトリハロメチル基ず少なくずも個の発色団郚
分を有する−トリアゞン化合物を光重合開始剀
ずするもの特開昭48−36281号公報、−ゞア
ルキルアミノアリリデンず共圹した䞍飜和ケトン
を光重合開始剀ずするもの特開昭54−155292号
公報、倚環性キノンず第䞉玚アミンずの組合せ
を光重合開始剀ずするもの特開昭52−134692号
公報、10−オキシ゚ステルなどの有機過酞
化物ずチアピリリりム塩を光重合開始剀ずするも
の〔日本化孊䌚誌、第号、第119ペヌゞ1985
幎〕、メロシアニン色玠又は芳銙族ケトン類ず
−トリクロロメチル−−ト
リアゞン及び−メルカプトベンゟむミダゟヌル
を光重合開始剀ずするもの〔日本化孊䌚誌、第
号、第192ペヌゞ1984幎〕などが提案されおい
る。 しかしながら、これらの光硬化性暹脂組成物
は、いずれも埓来のものに比べお、より波長の長
い光に察し感光性を瀺すものの、600n以䞊の
長波長に察する感光性が䜎いか、あるいはほずん
どないために、レヌザヌ光源ずしお、小型で光源
が安定しおいるずいう点で有利なHE−Neレヌザ
ヌ633n、半導䜓レヌザヌ780n以䞊な
どの光源を利甚するこずができないずいう欠点を
有しおいる。 䞀方、He−Neレヌザヌに察しお、高い感光性
を瀺すメチレンブルヌ、−トル゚ンスルホン酞
及びアクリル酞バリりムから成る光硬化性組成物
が提案されおいるが〔「フオトグラフむツク・ア
ンド・サむ゚ンシテむツク・゚ンゞニアリング
Photogr・Sci・Eng・」第12巻、第177ペヌゞ
1968幎〕、このものは氎溶性であ぀お、油溶性
の暹脂組成物には適さないずいう欠点がある。 たた、He−Neレヌザヌあるいは半導䜓レヌザ
ヌのような長波長光源に察しお感感光性をも぀油
溶性の光硬化性暹脂組成物ずしお、ポルフむリン
類、アザポルフむリン類又はその金属錯䜓ずゞア
リヌルペヌドニりム塩ずの組合せを光重合開始剀
ずする組成物が提案されおいるが特開昭60−
78422号公報、該ポルフむリン類では長波長光に
察する感光性が䜎く、たたフタロシアニン類のよ
うなアザポルフむリン類では増感効率が䜎いずい
う問題があ぀お、可芖光レヌザヌ甚あるいは半導
䜓レヌザヌ甚の感光材料や銀塩代替材料などどず
しお利甚するには、なお䞀局高い感光性胜が望た
れる。 発明が解決しようずする問題点 本発明は、このような埓来の光硬化性暹脂組成
物が有する欠点を克服し、600n以䞊の長波長
光に察しお優れた感光性を有し、He−Neレヌザ
ヌや半導䜓レヌザヌなどの光源を䜿甚しうる光硬
化性暹脂組成物を提䟛するこずを目的ずしおなさ
れたものである。 問題点を解決するための手段 本発明者らは、600n以䞊の長波長光に察し
お優れた感光性を有する光硬化性暹脂組成物を開
発するために鋭意研究を重ねた結果、光重合開始
剀ずしお、特定構造のテトラベンゟポルフむリン
類又はその金属錯䜓ず、電子受容性ラゞカル発生
剀ずの組せを甚いるこずにより、前蚘目的を達成
しうるこずを芋い出し、この知芋に基づいお本発
明を完成するに至぀た。 すなわち、本発明は、(A)重合可胜な゚チレン性
䞍飜和結合少なくずも個を有する化合物ず、(B)
光重合開始剀ずを含有しお成る光硬化性暹脂組成
物においお、該光重合開始剀ずしお、(ã‚€)䞀般匏 匏䞭のは氎玠原子、アルキル基又は眮換基を
有する若しくは有しない芳銙族性残基であり、各
ベンれン環は眮換基を有しおいおもよいし、有し
なくおもよく、たた他の瞮合ベンれン環を有しお
いおもよい で衚わされるテトラベンゟポルフむリン類又はそ
の金属錯䜓ず、(ロ)電子受容性ラゞカル発生剀ずの
組合せを甚いるこずを特城ずする光硬化性暹脂組
成物を提䟛するものである。 以䞋、本発明を詳现に説明する。 本発明組成物においお、(A)成分ずしお甚いられ
る重合可胜な゚チレン性䞍飜和結合少なくずも
個を有する化合物は、ビニル系モノマヌの他に、
オリゎマヌや高分子量化合物であ぀おもよく、こ
のようなものずしおは、䟋えばアクリル酞、メタ
クリル酞、むタコン酞、マレむン酞、アクリルア
ミド、メタクリルアミド、ゞアセトンアクリルア
ミド、−ヒドロキシ゚チルアクリレヌト、−
ビニルカルバゟヌル、−ビニルピロリドンなど
の高沞点モノマヌ、゚チレングリコヌル、ゞ゚チ
レングリコヌル、−プロパンゞオヌル、
−ブタンゞオヌル、−ペンタンゞオ
ヌル、−ヘキサンゞオヌル、10−デカ
ンゞオヌル、トリメチロヌル゚タン、ペンタ゚リ
スリトヌル、゜ルビトヌル、マンニトヌルなどの
ゞ若しくはポリアクリル゚ステル又はポリメタク
リル゚ステル、あるいはアクリル化又はメタクリ
ル化された゚ポキシ暹脂、ポリ゚ステルアクリレ
ヌトオリゎマヌ、アクリル化又はメタクリル化さ
れたりレタンオリゎマヌ、アクロレむン化された
ポリビニルアルコヌルなどを挙げるこずができる
が、このかぎりではない。 本発明組成物における(B)成分の光重合開始剀ず
しおは、前蚘䞀般匏で衚わさるテトラベン
ゟポルフむリン類又はその金属錯䜓ず、電子受容
性ラゞカル発生剀ずの組合せから成るものが甚い
られる。 前蚘䞀般匏で衚わされるテトラベンゟポ
ルフむリン類におけるは氎玠原子、アルキル基
又はプニル基、ナフチル基、ピリゞル基などの
芳銙族性残基であり、この芳銙族性残基は眮換基
を有しおいおもよいし、眮換基を有しなくおもよ
い。たた、各ベンれン環は眮換基を有しおいおも
よいし、有しなくおもよく、この眮換基ずしおは
ハロゲン原子、炭玠数〜の䜎玚アルキル基又
は䜎玚アルコキシ基、アルコキシカルボニル基、
カルボキシル基、ニトロ基、アミノ基、スルホン
基などが挙げられ、これらの眮換基は各ベンれン
環に個又は個以䞊導入されおいおもよい。さ
らに、各ベンれン環は他のベンれン環ず瞮合しお
ナフタレン環を圢成しおいおもよい。 このようなテトラベンゟポルフむリン類の具䜓
䟋ずしおは、無眮換のテトラベンゟポルフむリ
ン、メ゜䜍の少なくずも぀がプニル基で眮換
されたメ゜−プニル基テトラベンゟポルフむリ
ン、メ゜䜍の少なくずも぀がナフチル基で眮換
されたメ゜−ナフチルテトラベンゟポルフむリ
ン、メ゜䜍の少なくずも぀がピリゞル基で眮換
されたメ゜−ピリゞルテトラベンゟポルフむリ
ン、5′5″−テトラ−−ブチルテト
ラベンゟポルフむリン、4′6′4″6″
−オクタメチルテトラベンゟポルフむ
リン、5′5″−テトラ゚トキシテトラ
ベンゟポルフむリン、メ゜䜍の少なくずも぀が
メチル基で眮換されたメ゜−メチルテトラベンゟ
ポルフむリン、メ゜䜍の少なくずも぀がベンゞ
ル基で眮換されたメ゜−ベンゞルテトラベンゟポ
ルフむリン、メ゜䜍に少なくずも぀がトリル基
で眮換されたメ゜−トリルテトラベンゟポルフむ
リン、瞮合環ずしおベンれン環がさらに結合した
テトラナフトポルフむリン、メ゜−プニルテト
ラナフトポルフむリンなどが挙げられる。 たた、テトラベンゟポルフむリン類の金属錯䜓
ずしおは、䟋えば前蚘のテトラベンゟポルフむリ
ン類ず、Mg、Zn、Cd、Pd、Ni、Co、Cu、Pb
などの二䟡金属原子ずの錯䜓、ヒドロキシル基や
ハロゲン原子などを垂盎方向に配䜍したAl、In、
Ga、Fe、Crなどの䞉䟡の金属原子又はSi、Snな
どの四䟡の金属原子ずの錯䜓、酞玠原子が配䜍し
た、Tiなどの四䟡の金属原子ずの錯䜓などを
挙げるこずができる。 䞀方、該光重合開始剀を構成するもう぀の成
分である電子受容性ラゞカル発生剀ずしおは、電
気化孊的枬定における還元電䜍が−1.5eV以䞊の
倀を瀺す化合物が特に奜適に甚いられる。 このような化合物ずしおは、䞀般匏 匏䞭のR1及びR2は、それぞれ氎玠原子、ハロ
ゲン原子、䜎玚アルキル基、メトキシ基、シアノ
基又はニトロ基、X-はハロゲンむオン、BF4、
PF6又はAsF6である で衚わされるゞアリヌルペヌドニりム塩〔「マク
ロモレキナルスMacromolecules」第10号、
第1307ペヌゞ1977幎〕、䞀般匏 匏䞭のR3及びR4はそれぞれアルキル基、R1及
びX-は前蚘ず同じ意味をも぀ で衚わされるプナシルスルホニりム塩〔「ゞダ
ヌナル・オブ・ポリマヌ・サむ゚ンスJ.
Polym.Sci」第17巻、第2877ペヌゞ1979幎〕、
䞀般匏 匏䞭のR5及びR6はそれぞれアルキル基又はア
リヌル基、R1及びX-は前蚘ず同じ意味をも぀
で衚わされるプナシルスルホキ゜ニりム塩ペ
ヌロツパ特蚱第44274号明现曞、䞀般匏 匏䞭のR1、R5、R6及びX-は前蚘ず同じ意味を
も぀ で衚わされるスルホキ゜ニりム塩ペヌロツパ特
蚱第44274号明现曞、䞀般匏 匏䞭のR7、R8及びR9はそれぞれメチル基又は
トリハロゲン化メチル基である で衚わされるトリアゞン化合物などを挙げるこず
ができる。 前蚘䞀般匏で衚わされるゞアリヌルペヌ
ドニりム塩ずしおは、䟋えばゞプニルペヌドニ
りム、ゞトリルペヌドニりム、プニル−ア
ニシルペヌドニりム、ビス−ニトロプニ
ルペヌドニりム、ビス−tert−ブチルプ
ニルペヌドニりムなどのペヌドニりムのクロリ
ド、ブロミド、ホりフツ化塩、ヘキサフルオロホ
スプヌト塩、ヘキサフルオロアルセネヌト塩な
どが、䞀般匏で衚わされるプナシルスル
ホニりム塩ずしおは、䟋えばゞメチルプナシル
スルホニりム、プナシルテトラメチレンスルホ
ニりム、−クロロプナシルスルホニりムなど
のクロリド、ブロミド、テトラフルオロボレヌト
塩、ヘキサフルオロホスプヌト塩、ヘキサフル
オロアルセネヌト塩などが、䞀般匏で衚わ
されるプナシルスルホキ゜ニりム塩ずしおは、
䟋えばゞメチルプナシルスルホキ゜ニりム塩、
ゞプニルプナシルスルホキ゜ニりムなどのク
ロリド、ブロミド、テトラフルオロポレヌト塩、
ヘキサフルオロホスプヌト塩、ヘキサフルオロ
アルセネヌト塩などが、䞀般匏で衚わされ
るスルホキ゜ニりム塩ずしおは、䟋えばゞメチル
プノキシスルホキ゜ニりム、ゞプニルプノ
キシスルホキ゜ニりムなどのクロリド、ブロミ
ド、テトラフルオロボレヌト塩、ヘキサフルオロ
ホスプヌト塩、ヘキサフルオロアルセネヌト塩
などが、䞀般匏で衚わされるトリアゞン化
合物ずしおは、䟋えば−トリストリ
クロロメチルトリアゞン、−トリス
トリブロモメチルトリアゞン、−ビス
トリクロロメチル−−メチルトリアゞンなど
が挙げられる。 本発明組成物における(A)成分の゚チレン性䞍飜
和化合物ず(B)成分の光重合開始剀ずの䜿甚割合に
぀いおは、テトラベンゟポルフむリン類又はその
金属錯䜓ず゚チレン性䞍飜和化合物ずの重量比
が、通垞ないし500の範囲になるよう
に遞ばれる。たた、テトラベンゟポルフむリン類
又はその金属錯䜓ず電子受容性ラゞカル発生剀ず
の䜿甚割合に぀いおは、通垞重量比が10ない
し10、奜たしくはないしになる
ような割合で遞ばれる。 本発明の光硬化性暹脂組成物には、所望に応
じ、埓来光硬化性暹脂組成物に慣甚されおいる各
皮添加剀、䟋えばバむンダヌ、熱重合犁止剀、可
塑剀などを添加しおもよい。 䜜 甹 本発明組成物における、テトラベンゟポルフむ
リン類又はその金属錯䜓による電子受容性ラゞカ
ル発生剀の増感分解機構に぀いおは、必ずしも明
確ではないが、増感剀ず開始剀ずでで圢成する゚
キサむプレツクスからの電子移動反応による
〔「ザ・ゞダヌナル・オブ・むメヌゞング・テクノ
ロゞヌJ.Imaging.Tech.」第11巻、第号、第
146ペヌゞ1985幎〕ものず仮定するならば、あ
る皋床の説明が可胜である。すなわち、テトラベ
ンゟポルフむリン類又はその金属錯䜓の電気化孊
的枬定における酞化電䜍はほが0.5eV〜1.0eVの
範囲にあり、たたその励起゚ネルギヌ準䜍は
1.5eV〜2.0eVの範囲にあるため、電子移動によ
぀お増感分解される電子受容性ラゞカル発生剀の
還元電䜍が−1.5eVより䜎い倀であるず、匏 △Eox−Ered−Eex    ただし、Eoxはテトラベンゟポルフむリン類又
はその金属錯䜓の酞化電䜍、Eredはラゞカル発
生剀の還元電䜍、Eexはテトラベンゟポルフむリ
ン類の励起゚ネルギヌ準䜍、△は自由゚ネルギ
ヌ倉化である で衚わされる△がプラス倀ずなる。 この△がプラスになるずいうこずは、この反
応系が吞熱的であるこずを瀺し、電子受容性ラゞ
カル発生剀が増感分解されにくいこずを意味す
る。 発明の効果 本発明の光硬化性暹脂組成物は、光源ずしお、
高圧氎銀灯、超高圧氎銀灯、高圧キセノン灯、ハ
ロゲンランプ、螢光灯などを甚いるこずができる
倖、600n以䞊の長波長光に察しお高い感床を
瀺し、特に工業的に有甚なレヌザヌ光に察しお
0.1cm2〜数cm2ずいう極めお高い感床
を瀺すこずから、He−Cd、Ar、He−Ne、Krな
どのガスレヌザヌや、Ga・Al・Asの半導䜓レヌ
ザヌを甚いるこずができるし、たた高照床照射特
に生じやすい盞反則䞍軌挙動を瀺さないので、レ
ヌザヌビヌム走査による画像圢成材料、䟋えば平
版や凞版甚補版材料、プリント配線版甚フオトレ
ゞスト、ドラむフむルムレリヌフ䜜成材料、非銀
塩画像䜜成材料、ホログラム甚感光材料などずし
お、幅広い分野に応甚できる。 実斜䟋 次に実斜䟋により本発明をさらに詳现に説明す
るが、本発明はこれらの䟋によ぀おなんら限定さ
れるものでではない。 実斜䟋 〜 クロロメチルスチレン単䜍ずメタクリル酞メチ
ル単䜍ずをモル比の割合で有する共重合䜓
1.35ず、−ゞヒドロ−2H−ピラン−
−カルボン酞ナトリりム1.86ずを、ゞメチルア
セトアミド20ml䞭で60〜80℃においお間かきた
ぜお反応させたのち、氎−メタノヌル重量比
の混合溶媒䞭に反応液を投入し、ポリマ
ヌを沈殿させた。このポリマヌをろ別埌、メタノ
ヌルで十分掗浄しおから、ゞオキサンに溶解した
のち、メタノヌルぞ沈殿させお粟補した。 埗られたポリマヌをゞオキサン䞭に溶解しお、
重量濃床の溶液を調補し、これに還元電䜍が
−0.26eVのゞプニルペヌドニりム・ヘキサフ
ルオロホスプヌトず第衚に瀺す各皮テトラベ
ンゟポルフむリン類ずを、それぞれポリマヌに察
し、重量ず぀添加し、感光性溶液を調補し
た。 次に、この溶液を陜極酞化アルミニりム板䞊
に、玄1Όの厚さになるようにスピン塗垃し、
この感光局に、1.0mmのビヌム埄をも぀122
cm2の633nのHe−Neレヌザヌ光を照射し、ビヌ
ム埄ず同じ盎埄を䞎える゚ネルギヌ量を枬定し、
感床を求めた。その結果を第衚に瀺す。
INDUSTRIAL APPLICATION FIELD The present invention relates to a novel photocurable resin composition. More specifically, the present invention relates to a photocurable resin composition containing a specific photopolymerization initiator, which is particularly suitable as an image forming material by laser beam scanning. Background Art In recent years, photocurable resin compositions have attracted attention not only as materials for photoresists, inks, paints, varnishes, and printing plates, but also as image-forming materials that use laser light and photosensitive materials that replace silver salts. has been done. In the photocurable resin composition used as such a material, it is important for its performance to increase the photosensitive speed as much as possible, and many studies have been conducted for this purpose. However, most of the research to date has focused on photopolymerization initiators that are active in ultraviolet light, and conventional ones have insufficient photosensitivity for laser beams, so they are not suitable for laser beam scanning. Therefore, in order to form images, it was necessary to expand the photosensitive wavelength range and dramatically increase the photosensitive speed. Conventionally, photopolymerizable resins sensitive to visible light have been prepared using various compositions, such as S having at least one trihalomethyl group and at least one chromophore moiety, in which an ethylenically unsaturated compound and a triazine ring are conjugated. -Those using a triazine compound as a photopolymerization initiator (Japanese Patent Application Laid-open No. 1973-36281), those using an unsaturated ketone conjugated with p-dialkylaminoallylidene as a photopolymerization initiator (Japanese Patent Laid-Open No. 155292-1989) Publications), those using a combination of a polycyclic quinone and a tertiary amine as a photopolymerization initiator (Japanese Unexamined Patent Publication No. 134692/1983), and those using an organic peroxide such as 1,10-oxyester and a thiapyrylium salt as a photopolymerization initiator. Photopolymerization initiators [Journal of the Chemical Society of Japan, No. 1, page 119 (1985
2003)], merocyanine dye or aromatic ketones and 2,4,6-trichloromethyl-1,3,5-triazine and 2-mercaptobenzimidazole as photopolymerization initiators [Journal of the Chemical Society of Japan, Vol.
No. 192 (1984)] have been proposed. However, although all of these photocurable resin compositions exhibit photosensitivity to light with longer wavelengths than conventional ones, they have low or almost no photosensitivity to long wavelengths of 600 nm or more. Another drawback is that it is not possible to use light sources such as HE-Ne lasers (633 nm) and semiconductor lasers (780 nm or more), which are advantageous in that they are small and stable, as laser light sources. On the other hand, a photocurable composition consisting of methylene blue, p-toluenesulfonic acid, and barium acrylate, which exhibits high photosensitivity to He-Ne lasers, has been proposed.・Engineering (Photogr.Sci.Eng.), Vol. 12, Page 177 (1968)], this material has the disadvantage of being water-soluble and not suitable for oil-soluble resin compositions. In addition, as an oil-soluble photocurable resin composition that is sensitive to long wavelength light sources such as He-Ne lasers or semiconductor lasers, combinations of porphyrins, azaporphyrins, or their metal complexes and diaryliodonium salts can be used. A composition using as a photopolymerization initiator has been proposed.
78422), these porphyrins have low photosensitivity to long wavelength light, and azaporphyrins such as phthalocyanines have low sensitization efficiency. In order to use it as a silver salt substitute material, even higher photosensitivity is desired. Problems to be Solved by the Invention The present invention overcomes the drawbacks of such conventional photocurable resin compositions, has excellent photosensitivity to long wavelength light of 600 nm or more, and has He-Ne The purpose of this invention is to provide a photocurable resin composition that can use light sources such as lasers and semiconductor lasers. Means for Solving the Problems As a result of extensive research to develop a photocurable resin composition that has excellent photosensitivity to long wavelength light of 600 nm or more, the present inventors found that photopolymerization started. It has been discovered that the above object can be achieved by using a combination of a tetrabenzoporphyrin with a specific structure or a metal complex thereof and an electron-accepting radical generator as an agent, and based on this knowledge, the present invention has been developed. It was completed. That is, the present invention provides (A) a compound having at least one polymerizable ethylenically unsaturated bond; and (B)
In the photocurable resin composition comprising a photopolymerization initiator, as the photopolymerization initiator, (a) the general formula (R in the formula is a hydrogen atom, an alkyl group, or an aromatic residue with or without a substituent, and each benzene ring may or may not have a substituent, and A photocurable resin characterized by using a combination of a tetrabenzoporphyrin (which may have another condensed benzene ring) or a metal complex thereof, and (b) an electron-accepting radical generator. A composition is provided. The present invention will be explained in detail below. In the composition of the present invention, at least one polymerizable ethylenically unsaturated bond used as component (A)
In addition to vinyl monomers, compounds having
It may be an oligomer or a high molecular weight compound, such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, acrylamide, methacrylamide, diacetone acrylamide, 2-hydroxyethyl acrylate, N-
High-boiling monomers such as vinyl carbazole and N-vinylpyrrolidone, ethylene glycol, diethylene glycol, 1,3-propanediol,
di- or polyacrylic esters or polymethacrylic esters such as 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,10-decanediol, trimethylolethane, pentaerythritol, sorbitol, mannitol, Other examples include, but are not limited to, acrylated or methacrylated epoxy resins, polyester acrylate oligomers, acrylated or methacrylated urethane oligomers, and acroleinated polyvinyl alcohol. As the photopolymerization initiator of component (B) in the composition of the present invention, one consisting of a combination of a tetrabenzoporphyrin represented by the above general formula () or a metal complex thereof and an electron-accepting radical generator is used. It will be done. R in the tetrabenzoporphyrins represented by the general formula () is a hydrogen atom, an alkyl group, or an aromatic residue such as a phenyl group, a naphthyl group, or a pyridyl group, and this aromatic residue has no substituent. It may have a substituent or it may have no substituent. Each benzene ring may or may not have a substituent, and examples of the substituent include a halogen atom, a lower alkyl group having 1 to 5 carbon atoms, a lower alkoxy group, an alkoxycarbonyl group,
Examples include carboxyl group, nitro group, amino group, sulfone group, etc., and one or more of these substituents may be introduced into each benzene ring. Furthermore, each benzene ring may be fused with another benzene ring to form a naphthalene ring. Specific examples of such tetrabenzoporphyrins include unsubstituted tetrabenzoporphyrin, meso-phenyl group tetrabenzoporphyrin in which at least one meso position is substituted with a phenyl group, and naphthyl group in which at least one meso position is substituted with a phenyl group. meso-naphthyltetrabenzoporphyrin substituted with a group, meso-pyridyltetrabenzoporphyrin substituted with a pyridyl group in at least one meso position, 5,5′,5″,5-tetra-t-butyltetrabenzo Porphyrin, 4, 6, 4′, 6′, 4″, 6″,
4,6-octamethyltetrabenzoporphyrin, 5,5′,5″,5-tetraethoxytetrabenzoporphyrin, meso-methyltetrabenzoporphyrin substituted with a methyl group at least one meso position, meso position meso-benzyltetrabenzoporphyrin in which at least one of the meso positions is substituted with a benzyl group, meso-tolyltetrabenzoporphyrin in which at least one meso position is substituted with a tolyl group, and tetranaphthoporphyrin in which a benzene ring is further bonded as a condensed ring. Examples of metal complexes of tetrabenzoporphyrins include the above-mentioned tetrabenzoporphyrins and Mg, Zn, Cd, Pd, Ni, Co, Cu, Pb
complexes with divalent metal atoms such as Al, In, etc. with vertically coordinated hydroxyl groups and halogen atoms,
Examples include complexes with trivalent metal atoms such as Ga, Fe, and Cr or tetravalent metal atoms such as Si and Sn, and complexes with tetravalent metal atoms such as V and Ti coordinated with oxygen atoms. I can do it. On the other hand, as the electron-accepting radical generator, which is another component constituting the photopolymerization initiator, a compound exhibiting a reduction potential of -1.5 eV or more in electrochemical measurement is particularly preferably used. Such compounds have the general formula (R 1 and R 2 in the formula are a hydrogen atom, a halogen atom, a lower alkyl group, a methoxy group, a cyano group, or a nitro group, respectively, X - is a halogen ion, BF 4 ,
Diaryliodonium salt represented by PF 6 or AsF 6 [Macromolecules No. 10,
Page 1307 (1977)], general formula (In the formula, R 3 and R 4 are each an alkyl group, and R 1 and X - have the same meaning as above.)
Polym.Sci) Volume 17, Page 2877 (1979)],
general formula (R 5 and R 6 in the formula are each an alkyl group or an aryl group, R 1 and X - have the same meanings as above)
Phenacyl sulfoxonium salt represented by (European Patent No. 44274), general formula (R 1 , R 5 , R 6 and X - in the formula have the same meanings as above) A sulfoxonium salt represented by (In the formula, R 7 , R 8 and R 9 are each a methyl group or a trihalogenated methyl group.) Triazine compounds represented by the following can be mentioned. Examples of diaryliodonium salts represented by the general formula () include diphenyliodonium, ditolyliodonium, phenyl(p-anisyl)iodonium, bis(m-nitrophenyl)iodonium, and bis(p-tert-butylphenyl)iodonium. Examples of the phenacylsulfonium salts represented by the general formula () include iodonium chloride, bromide, borofluoride salt, hexafluorophosphate salt, hexafluoroarsenate salt, etc., such as dimethylphenacylsulfonium, phenacyltetramethylenesulfonium, Examples of the phenacylsulfoxonium salt represented by the general formula () include chloride, bromide, tetrafluoroborate salt, hexafluorophosphate salt, hexafluoroarsenate salt, etc. such as p-chlorophenacylsulfonium.
For example, dimethylphenacyl sulfoxonium salt,
chloride, bromide, and tetrafluoroporate salts such as diphenyl phenacyl sulfoxonium;
Sulfoxonium salts represented by the general formula () include hexafluorophosphate salts, hexafluoroarsenate salts, etc.; Examples of the triazine compound represented by the general formula () include fluoroborate salt, hexafluorophosphate salt, hexafluoroarsenate salt, etc., such as 2,4,6-tris(trichloromethyl)triazine, 2,4,6- Examples include tris(tribromomethyl)triazine, 2,4-bis(trichloromethyl)-6-methyltriazine, and the like. Regarding the usage ratio of the ethylenically unsaturated compound as the component (A) and the photopolymerization initiator as the component (B) in the composition of the present invention, the weight of the tetrabenzoporphyrin or its metal complex and the ethylenically unsaturated compound is determined. The ratio is usually chosen to be in the range 1:5 to 1:500. The ratio of the tetrabenzoporphyrins or their metal complexes to the electron-accepting radical generator is usually such that the weight ratio is 10:1 to 1:10, preferably 2:1 to 1:5. Selected based on percentage. If desired, the photocurable resin composition of the present invention may contain various additives conventionally used in photocurable resin compositions, such as binders, thermal polymerization inhibitors, plasticizers, and the like. Effect The mechanism of sensitized decomposition of the electron-accepting radical generator by tetrabenzoporphyrins or its metal complex in the composition of the present invention is not necessarily clear, but the excitation formed by the sensitizer and the initiator Due to the electron transfer reaction from the plexus [The Journal of Imaging Technology (J.Imaging.Tech.) Vol. 11, No. 4, No.
Page 146 (1985)], a certain degree of explanation is possible. In other words, the oxidation potential in electrochemical measurements of tetrabenzoporphyrins or their metal complexes is approximately in the range of 0.5 eV to 1.0 eV, and the excitation energy level is
Since it is in the range of 1.5 eV to 2.0 eV, if the reduction potential of the electron-accepting radical generator that is sensitized and decomposed by electron transfer is lower than -1.5 eV, the formula △G = (Eox - Ered) -Eex...() (Eox is the oxidation potential of the tetrabenzoporphyrins or its metal complex, Ered is the reduction potential of the radical generator, Eex is the excitation energy level of the tetrabenzoporphyrins, △G is free ΔG, which is an energy change), has a positive value. A positive value of ΔG indicates that the reaction system is endothermic, and means that the electron-accepting radical generator is difficult to be decomposed by sensitization. Effects of the Invention The photocurable resin composition of the present invention can be used as a light source,
In addition to being able to use high-pressure mercury lamps, ultra-high-pressure mercury lamps, high-pressure xenon lamps, halogen lamps, fluorescent lamps, etc., it shows high sensitivity to long wavelength light of 600 nm or more, and is particularly sensitive to industrially useful laser light.
Gas lasers such as He-Cd, Ar, He-Ne, and Kr, and semiconductor lasers of Ga, Al, and As can be used because they exhibit extremely high sensitivity of 0.1 mJ/cm 2 to several mJ/cm 2 In addition, since it does not exhibit reciprocity law failure behavior that is likely to occur especially when exposed to high-intensity irradiation, it can be used for image forming materials by laser beam scanning, such as plate-making materials for lithography and letterpress, photoresists for printed wiring plates, materials for creating dry film reliefs, and non-silver salts. It can be applied to a wide range of fields, such as image creation materials and photosensitive materials for holograms. Examples Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples in any way. Examples 1 to 4 Copolymers having chloromethylstyrene units and methyl methacrylate units in a molar ratio of 1:1
1.35g and 3,4-dihydro-2H-pyran-2
- After reacting 1.86 g of sodium carboxylate in 20 ml of dimethylacetamide at 60 to 80°C for 1 hour, the reaction solution was poured into a mixed solvent of water and methanol (weight ratio 2:1), and the polymer was precipitated. This polymer was filtered off, thoroughly washed with methanol, dissolved in dioxane, and purified by precipitation in methanol. The resulting polymer was dissolved in dioxane,
A solution with a concentration of 5% by weight was prepared, and diphenyliodonium hexafluorophosphate having a reduction potential of -0.26 eV and various tetrabenzoporphyrins shown in Table 1 were each added at 4% by weight based on the polymer. A photosensitive solution was prepared. Next, this solution was spin-coated onto an anodized aluminum plate to a thickness of about 1 ÎŒm.
A 122 mW/wave with a beam diameter of 1.0 mm is applied to this photosensitive layer.
We irradiate a He-Ne laser beam of 633 nm in cm 2 and measure the amount of energy that gives the same diameter as the beam diameter.
Sensitivity was determined. The results are shown in Table 1.

【衚】 実斜䟋 〜 実斜䟋〜ず同様にしお調補したポリマヌ溶
液に、メ゜−プニルテトラベンゟポルフむリン
亜鉛錯䜓ず第衚に瀺す各皮の電子受容性ラゞカ
ル発生剀を、それぞれポリマヌに察しお重量
ず぀添加しお感光性溶液を調補したのち、実斜䟋
〜ず同様にしお評䟡した。その結果を第衚
に瀺す。
[Table] Examples 5 to 8 Meso-phenyltetrabenzoporphyrin zinc complex and various electron-accepting radical generators shown in Table 2 were added to polymer solutions prepared in the same manner as in Examples 1 to 4, respectively. 4% by weight based on polymer
After each addition was made to prepare a photosensitive solution, it was evaluated in the same manner as in Examples 1 to 4. The results are shown in Table 2.

【衚】【table】

【衚】【table】

Claims (1)

【特蚱請求の範囲】  (A)重合可胜な゚チレン性䞍飜和結合少なくず
も個を有する化合物ず、(B)光重合開始剀ずを含
有しお成る光硬化性暹脂組成物においお、該光重
合開始剀ずしお、(ã‚€)䞀般匏 匏䞭のは氎玠原子、アルキル基又は眮換基を
有する若しくは有しない芳銙族性残基であり、各
ベンれン環は眮換基を有しおいおもよいし、有し
なくおもよく、たた他の瞮合ベンれン環を有しお
いおもよい で衚わされるテトラベンゟポルフむリン類又はそ
の金属錯䜓ず、(ロ)電子受容性ラゞカル発生剀ずの
組合せを甚いるこずを特城ずする光硬化性暹脂組
成物。  電子受容性ラゞカル発生剀が、電気化孊的枬
定においおその還元電䜍が−1.5eV以䞊の倀を瀺
すものである特蚱請求の範囲第項蚘茉の組成
物。
[Scope of Claims] 1. A photocurable resin composition comprising (A) a compound having at least one polymerizable ethylenically unsaturated bond, and (B) a photopolymerization initiator; As an initiator, (a) general formula (R in the formula is a hydrogen atom, an alkyl group, or an aromatic residue with or without a substituent, and each benzene ring may or may not have a substituent, and A photocurable resin characterized by using a combination of a tetrabenzoporphyrin (which may have another condensed benzene ring) or a metal complex thereof, and (b) an electron-accepting radical generator. Composition. 2. The composition according to claim 1, wherein the electron-accepting radical generator exhibits a reduction potential of -1.5 eV or more in electrochemical measurements.
JP7679487A 1987-03-30 1987-03-30 Photo-setting resin composition Granted JPS63243102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7679487A JPS63243102A (en) 1987-03-30 1987-03-30 Photo-setting resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7679487A JPS63243102A (en) 1987-03-30 1987-03-30 Photo-setting resin composition

Publications (2)

Publication Number Publication Date
JPS63243102A JPS63243102A (en) 1988-10-11
JPH0355483B2 true JPH0355483B2 (en) 1991-08-23

Family

ID=13615538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7679487A Granted JPS63243102A (en) 1987-03-30 1987-03-30 Photo-setting resin composition

Country Status (1)

Country Link
JP (1) JPS63243102A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278082A (en) * 1990-03-27 1991-12-09 Agency Of Ind Science & Technol Photosensitive material for hologram recording
JP2005300908A (en) * 2004-04-12 2005-10-27 Konica Minolta Medical & Graphic Inc Photosensitive composition and photosensitive lithographic printing plate material

Also Published As

Publication number Publication date
JPS63243102A (en) 1988-10-11

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