JPH0350367B2 - - Google Patents
Info
- Publication number
- JPH0350367B2 JPH0350367B2 JP27766884A JP27766884A JPH0350367B2 JP H0350367 B2 JPH0350367 B2 JP H0350367B2 JP 27766884 A JP27766884 A JP 27766884A JP 27766884 A JP27766884 A JP 27766884A JP H0350367 B2 JPH0350367 B2 JP H0350367B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- substrate
- conductive film
- target
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 31
- 239000011787 zinc oxide Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001297 Zn alloy Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 53
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27766884A JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27766884A JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61158622A JPS61158622A (ja) | 1986-07-18 |
| JPH0350367B2 true JPH0350367B2 (de) | 1991-08-01 |
Family
ID=17586632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27766884A Granted JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61158622A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1235948B1 (de) * | 1999-12-03 | 2005-10-12 | N.V. Bekaert S.A. | Sputtertarget und verfahren zur herstellung eines solchen targets |
| WO2014002916A1 (en) * | 2012-06-29 | 2014-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for manufacturing oxide film |
-
1984
- 1984-12-29 JP JP27766884A patent/JPS61158622A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61158622A (ja) | 1986-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2936276B2 (ja) | 透明導電膜の製造方法およびその製造装置 | |
| US5009922A (en) | Method of forming a transparent conductive film | |
| JP2000040429A (ja) | 酸化亜鉛系透明導電膜の製造方法 | |
| JP2921874B2 (ja) | 高効率シートプラズマスパタリング装置 | |
| Webb | Conductivity imaging of the erosion pattern for ZnO prepared by planar RF magnetron sputtering | |
| JP4599595B2 (ja) | 透明導電膜の製造方法および製造装置 | |
| JP2635385B2 (ja) | イオンプレーティング方法 | |
| EP0318441B1 (de) | Anlage und Verfahren zur Ablagerung einer dünnen Schicht auf ein durchsichtiges Substrat, insbesondere zur Herstellung von Glasscheiben | |
| JPH0350367B2 (de) | ||
| JPH04929B2 (de) | ||
| JP4614936B2 (ja) | 複合型スパッタ装置及び複合型スパッタ方法 | |
| JP3254782B2 (ja) | 両面スパッタ成膜方法及びその装置並びにスパッタ成膜システム | |
| JP2004332030A (ja) | 透明導電膜の製造方法 | |
| JPH0329216A (ja) | 透明電導膜の形成方法 | |
| JPH056286B2 (de) | ||
| JP4999602B2 (ja) | 成膜装置 | |
| KR20010005515A (ko) | 산화 마그네슘 스퍼터링 장치 | |
| JPH056287B2 (de) | ||
| JPS6361387B2 (de) | ||
| JPH0273963A (ja) | 低温基体への薄膜形成方法 | |
| JP2878299B2 (ja) | イオンプレーティング方法 | |
| JPH0116912B2 (de) | ||
| JPH09176853A (ja) | 透明導電膜形成用マグネトロンスパッタリング装置およびそれを用いた透明導電膜の製造方法 | |
| Matsuda et al. | Development of large area sputter-coating method using magnetized ac plasmas with inclined electrodes | |
| Manju Bala et al. | Oxide thin films grown by |