JPH0347960A - Plasma vapor deposition device - Google Patents

Abstract

PURPOSE:To control the electric power to be thrown, a film forming speed, film components, film quality, etc., with high accuracy and to prevent the damage of the inside wall of a low-pressure high-temp. plasma chamber which vaporizes powder raw materials by forming the inside wall of the chamber of a conductive material. CONSTITUTION:A substrate holder 13 which holds a substrate 12 is disposed in a treating chamber 11. The powder raw materials 71 are sent upward from a power raw material supplying device 70 into the low-pressure high-temp. plasma 52 in the low-pressure high-temp. plasma chamber 51 where the raw materials are vaporized in the plasma 52 and are deposited on the surface of the substrate 12 in the upper part. The inside wall of the low-pressure high- temp. plasma chamber 51 is formed of the conductive material to prevent the damage of the inside wall by the powder raw materials and the plasma. The chamber is installed in the position of the same height as the height of the low-pressure high-temp. plasma or higher so that the fall of the remaining powder raw materials onto the substrate is prevented even if the powder raw materials are not completely vaporized.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a plasma evaporation apparatus for forming a thin film using plasma, and in particular for forming a thin film by feeding a powder raw material into plasma and vaporizing it. The present invention relates to a plasma deposition apparatus.

[Prior Art] It is known that a plasma deposition method is used as a means of making thin films of complex composites such as high-temperature superconductors made of multi-element oxides, other compounds, alloys, and the like. For example, the following document describes that thin films of oxide superconductors can be formed at high speed by plasma deposition.

Appl, Phys, Lett, 52 (1
987) I), 1274-1.276Tera
shima et al., “Preparation of’
supercon-ductlng Y-Ba-Cu-
01'11m5 by a reactiveplus
Such a conventional plasma evaporation method will be explained with reference to FIG.
Put it in 21. The inside of the plasma generation chamber 121 is at atmospheric pressure. When a high frequency voltage is applied to the coil 125 from the high frequency power supply 131 (4MHz, 45kW), the plasma 126
occurs. Cooling water 123 and 124 is allowed to flow inside the double tube 122 made of quartz glass.

In this state, the raw material powder 113 is fed into the plasma 126 from the double layer. The powder 113 is vaporized in the plasma 126 and deposited on the surface of the substrate 141 of the substrate boulder 142J:. The mixture of argon and oxygen exits in the direction of arrow 117.

In the conventional dual plasma deposition method, the plasma is generated at atmospheric pressure, which causes the following problems.

(a) Since the mean free path of gas is short, a large amount of electric power is required to sufficiently increase the energy of electrons.

(b) Residual gas other than the introduced gas remains in the plasma generation chamber, adversely affecting film formation.

(C) There is a problem with the stability of the plasma, and there are difficulties in controlling the film formation rate and the film components and film quality. Unusual noises may also occur because the plasma is unstable.

Therefore, it is very difficult to control input power, film formation rate, film components, film quality, etc. with high precision.

Claims (4)

[Claims] (1) It has a processing chamber that can be evacuated to a vacuum, a substrate holder that holds a substrate, a low-pressure high-temperature plasma chamber that can communicate with the processing chamber, and a raw material supply device that supplies powder raw material into the low-pressure high-temperature plasma chamber. , a plasma deposition apparatus for producing a thin film by vaporizing the powder raw material using low-pressure high-temperature plasma and depositing it on the substrate, characterized in that the inner wall of the low-pressure high-temperature plasma chamber is made of a conductive material. Plasma deposition equipment. (2) The plasma deposition apparatus according to claim 1, wherein the low-pressure high-temperature plasma is generated by applying electric power to the inner wall of the low-pressure high-temperature plasma chamber. (3) The plasma deposition apparatus according to claim 1, wherein the low-pressure, high-temperature plasma is generated by cold cathode discharge. (4) It has a processing chamber that can be evacuated to a vacuum, a substrate holder that holds a substrate, a low-pressure high-temperature plasma chamber that can communicate with the processing chamber, and a raw material supply device that supplies powder raw material into the low-pressure high-temperature plasma chamber. , a plasma deposition apparatus for producing a thin film by vaporizing the powder raw material using low-pressure high-temperature plasma and depositing it on the substrate, the substrate being disposed at a position equal to or higher than the same height as the low-pressure high-temperature plasma; A plasma evaporation device featuring: