JPH06112133A - Method of covering upper section of base body with transparent dielectric film - Google Patents

Method of covering upper section of base body with transparent dielectric film

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Publication number
JPH06112133A
JPH06112133A JP4255197A JP25519792A JPH06112133A JP H06112133 A JPH06112133 A JP H06112133A JP 4255197 A JP4255197 A JP 4255197A JP 25519792 A JP25519792 A JP 25519792A JP H06112133 A JPH06112133 A JP H06112133A
Authority
JP
Japan
Prior art keywords
gas
plasma
film
anode
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4255197A
Other languages
Japanese (ja)
Inventor
Minoru Matsumoto
Hidemi Nakai
Etsuo Ogino
日出海 中井
稔 松本
悦男 荻野
Original Assignee
Nippon Sheet Glass Co Ltd
日本板硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd, 日本板硝子株式会社 filed Critical Nippon Sheet Glass Co Ltd
Priority to JP4255197A priority Critical patent/JPH06112133A/en
Publication of JPH06112133A publication Critical patent/JPH06112133A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To cover the upper section of a base body having a large area uniformly with a dielectric film in a short time by covering the surface of an anode with an adhesion preventive plate electrically insulated from the anode and specifying the feed rate of silane gas and oxygen gas and pressure. CONSTITUTION:An anode 9, into which an adhesion preventive plate 11 for preventing the adhesion of a film to the surface of the anode 9 is incorporated, is installed through an electric insulating material 10 while being oppositely faced to the wall of a vacuum tank 1. A glass base body 4 is heated by substrate heaters 3, and SiH4 gas is introduced from a raw-material gas introducing pipe 15 and O2 gas as a reaction gas from a reaction-gas introducing pipe 16 under the state, in which plasma is generated. A supply volume ratio is kept within a range of a raw material gas:a reaction gas = 1:2-1:5, the inside of sheet plasma is supplied with the gas from a gas supply nozzle 14, and the pressure of a reaction chamber 2 is set to 5.0Pa or less. Accordingly, discharge plasma having high density can be maintained stably for a prolonged time.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a dielectric thin film by a plasma CVD method, and more particularly to a film for preventing diffusion of impurities such as alkali on a glass substrate, an insulating film for semiconductors, a protective film for various optical films, and a thin film. The present invention relates to a method for producing an amorphous silicon compound film such as silicon dioxide, silicon nitride, or silicon oxynitride suitable for an optical waveguide or the like.

[0002]

2. Description of the Related Art As a method for coating a silicon dioxide film, a silicon nitride film and a silicon oxynitride film in a depressurized vacuum chamber, a vacuum deposition method, a reactive sputtering method, a high frequency discharge plasma CVD method and the like are known. For example, as a method of coating a silicon dioxide film by a vacuum vapor deposition method, a method of directly irradiating a vapor deposition material such as quartz glass with an electron beam accelerated to about several KV and heating / evaporating it is known. As a method of coating a silicon dioxide film by a reactive sputtering method, a method of sputtering a target of silicon or silicon dioxide with a mixed gas of argon and oxygen is known, and a method of coating a silicon nitride film is a method of coating a silicon nitride film. A method is known in which a target is sputtered in a high frequency discharge plasma of a mixed gas of argon and nitrogen. In addition, plasma CVD in which a mixed gas of silane gas and oxygen gas or mixed gas of silane gas and ammonia gas is introduced into the reaction chamber, high-frequency power is applied between discharge electrodes, and a silicon dioxide film or a silicon nitride film is coated on a substrate by plasma reaction.
The law is known.

[0003]

The industrial coating of a dielectric film containing silicon, such as silicon dioxide, silicon nitride, or silicon oxynitride, especially its thick film, on a substrate by the above-mentioned conventional method will be described below. There was a problem.

That is, in the method of vacuum vapor deposition, a film can be formed on a substrate at a relatively high film-forming rate, but since the ratio of excited particles or reaction gas being excited is extremely low, the film is dense and of good quality. It was difficult to form a proper silicon dioxide film. In particular, when a film of a nitrogen compound is coated, it is difficult to coat a silicon nitride film or a silicon oxynitride film on a substrate because the reaction probability of vaporized atoms and nitrogen gas is extremely low.

On the other hand, although a thick film having a dense structure can be formed by the method by sputtering, the film forming rate is very small and it is economically difficult to industrially coat the thick film. .

Further, plasma CVD using glow discharge
Although it is possible to coat the film coating at a relatively high film-forming rate by the method described in (1), the problem that the film defects such as pinholes and abnormal growth increase in the silicon dioxide obtained when the film-forming rate is increased. was there. When the film forming speed is increased, a large amount of powder is generated in the manufacturing apparatus, which deteriorates the above-mentioned film quality, and there is also a problem that the operation rate of the apparatus cannot be increased due to the work for removing it. It was

Furthermore, when the above-mentioned conventional dielectric film containing silicon is coated on the substrate by the above-mentioned conventional technique, when the thickness becomes 1 to several μm or more, film peeling from the substrate or cracks on the film surface may occur. There was a serious problem.

The present invention has been made in order to solve the above-mentioned conventional problems, and it is possible to uniformly disperse a film on a substrate having a large area and to prevent film peeling from the substrate or cracks on the film surface. It is intended to provide a method capable of coating a dielectric film composed of at least one of nitrogen and silicon in a short time.

[0009]

SUMMARY OF THE INVENTION The present invention uses a plasma generator having a plasma source and an anode, which is installed in a reaction chamber of a depressurized vacuum container, and uses an inert gas and hydrogen in the reaction chamber. A plasma containing at least one kind of gas is generated, the generated plasma is confined in a predetermined shape by magnetic field means to form high density plasma, and a raw material gas containing reaction gas and silicon passed through the high density plasma. In the method of coating a dielectric film on the surface of a substrate placed in the reaction chamber, the surface of the anode has an opening and is protected from electrical insulation from the anode. Covering with an adhesion plate, the raw material gas is silane or a silane derivative gas, and the reaction gas is at least one selected from the group of reaction gases of oxygen, nitrogen, nitrous oxide, and ammonia. At least one of oxygen and nitrogen and silicon, the supply volume ratio of which is in the range of source gas: reaction gas = 1: 2 to 1: 5 and the pressure in the reaction chamber is 5.0 Pa or less. Is a method of coating a transparent dielectric film consisting of

The arc discharge plasma used in the present invention can be generated by a plasma beam generator comprising a plasma beam generator and an anode. As such a plasma beam generator, a plasma beam generator disclosed in Vacuum No. 25, No. 10 (published in 1982) in which a composite cathode plasma generator and a pressure gradient plasma generator are combined is preferably used. Further, in order to uniformly coat a large-area substrate with a dielectric film, a sheet-shaped plasma disclosed in JP-A-59-27499 can be used.

The discharge gas introduced into the pressure gradient type plasma beam generator may be an inert gas such as argon, helium, xenon or krypton, hydrogen gas, or a mixed gas thereof. Above all, argon gas is preferably used from the viewpoint of obtaining discharge plasma stably and easily. As a raw material gas that can be used when forming a film, a silane gas such as SiH 4 , Si 2 H 6 or S
A gas of a silane derivative such as iF 4 , SiCl 4 , and Si (CH 3 ) 4 can be used. Usually monosilane gas (Si
H 4 ) is preferably used. Further, as the reaction gas, a single gas or a mixed gas of oxygen, nitrogen, nitrous oxide, and ammonia can be used, and these gases are appropriately used depending on the coating of the silicon dioxide film, the silicon nitride film, and the silicon oxynitride film. Can be used. Further, the dielectric film of the present invention includes those containing impurities mixed from raw materials or the like or impurities intentionally doped. Further, the silicon dioxide film and the silicon nitride film of the dielectric film of the present invention are, of course, those having a stoichiometric composition of SiO 2 and Si 3 N 4 , respectively. It also includes those lacking oxygen or nitrogen.

The ratio of the supply amount of the raw material gas to the supply amount of the reaction gas is 2 to 5 times the reaction gas with respect to the raw material gas 1 in terms of volume ratio. When the reaction gas is supplied to the source gas 1 in an amount less than 2, the resulting dielectric film becomes light-absorbing, and the transparent dielectric film cannot be covered with visible light. on the other hand,
When the supply amount of the reaction gas exceeds five times that of the source gas, the pressure in the reaction chamber at the time of film coating increases due to the presence of the excess reaction gas, the plasma becomes unstable, and the electrons in the plasma become The energy loss of electrons becomes remarkable due to collisions with excess reaction gas molecules, and as a result, the efficiency for exciting or decomposing the raw material gas is reduced and the deposition rate of the dielectric film is reduced. Furthermore, when the reaction gas is supplied in excess of 5 times the amount of the source gas supplied, --OH is introduced into the film to be coated.
Bonds and --NH bonds are contained in large amounts, and the denseness of the film is lowered, which is not preferable for obtaining a high quality thin film. In particular, such a problem becomes noticeable under the condition that a high film formation rate is obtained, that is, when the raw material gas supply amount is large.

The pressure at the time of coating the dielectric film of the present invention is 5.
It is necessary to be 0 Pa or less, preferably 1.33 Pa or less. When the coating pressure is higher than 5.0 Pa, collisions between electrons in plasma and residual gas molecules increase, and as a result, energy loss of electrons becomes remarkable,
The stability of discharge is reduced, and stable coating cannot be performed for a long time. Furthermore, the energy loss of electrons is such that a high film formation rate cannot be obtained because the plasma density is lowered and the probability of gas molecule excitation / decomposition is extremely reduced, and the obtained film has particularly thick characteristics. In this case, the film will crack. In addition, coating under a high pressure exceeding 5.0 Pa increases the gas phase reaction between the raw material gas and the reaction gas, which causes the generation of powder and causes film defects such as film surface pinholes and abnormal film growth. I will let you. On the other hand, the lower limit of the pressure at the time of coating can stably generate high-density plasma even at a low pressure of about 0.05 Pa, but in order to efficiently react the raw material gas and the reaction gas, It is preferably 1.3 Pa or more.

In order to efficiently activate the gas in the high density plasma, the source gas and the reaction gas are supplied to the reaction chamber in such a manner that the plasma is formed substantially parallel to the substrate. The gas is introduced from a position facing the substrate with the gas sandwiched between them toward the film-covered surface of the substrate using a gas introduction pipe or the like so that the gas molecules pass through the region where plasma exists and reach the substrate. Is preferably arranged.
Further, the method of introducing the reaction gas toward the substrate from a position facing the substrate while enclosing the plasma, and introducing the source gas toward the substrate from between the substrate and the plasma is preferable in order to obtain a high film formation rate. .

In order to secure the stability of the high density discharge plasma in the coating of the dielectric film according to the present invention, the anode is made of a metal having a high melting point and stable to the reaction gas, and the plasma is focused on the metal to force the anode. The dielectric material formed on the anode surface by plasma reaction to thermally re-evaporate, or to prevent the dielectric material from adhering to the anode surface. Is covered with an adhesion preventive plate that is electrically insulated from the anode. Examples of the anode material having a high melting point and stable to the above reaction gas include tantalum metal and carbon, and among them, tantalum metal is preferable.

Providing the deposition preventive plate so as to cover the surface of the anode covers a thick dielectric film of 1 μm or more which requires a continuous film for a long time, or a dielectric film by an in-line continuous film forming process. It is especially effective when coating for a long time. Further, by supplying an inert gas into the space surrounded by the anode and the deposition-inhibitory plate by a gas introduction pipe or the like to reduce the partial pressure of the reaction gas near the surface of the anode, the electric conductivity of the anode is secured for a long time. It is more preferable to

[0017]

In the present invention, the high-density arc discharge plasma promotes the dissociation / reaction of the raw material gas and the reaction gas supplied into the plasma. It is considered that the gas molecules dissociated in the plasma are transported to the surface of the substrate in the form of active radicals or ions to form a film, but the reaction process has not been clarified. The plasma used in the present invention uses arc discharge and is confined in a predetermined space by a magnetic field. Therefore, the plasma density is 10 3 to 10 5 as compared with the glow discharge plasma CVD method of the prior art. It is possible to stably generate even in a pressure region which is twice as high and about 0.05 Pa. Since the high plasma density dramatically increases the ionization degree of gas, the probability of gas dissociation / reaction does not decrease even if a large amount of source gas and reaction gas are supplied into plasma. As a result, it becomes possible to form a film at a very high film forming rate. This rapid film forming property greatly reduces the coating time when coating a thick film on a substrate. Stable generation of high-density plasma under low-pressure conditions reduces the generation of powder due to plasma vapor phase reaction found in the conventional glow discharge plasma CVD method, and there is no pinhole in the coated film or abnormal growth of the film. A high-quality dielectric thick film can be formed.

Further, the flow rate ratio between the source gas and the reaction gas is 1:
By setting the ratio to 2 to 1: 5, even if a dielectric film is formed with a thickness of 1 μm or more, and more than 10 μm or more, cracks do not occur on the film surface and the film does not peel off from the substrate.

The anode surface is directly heated by high-density plasma to re-evaporate the film substance, or the anode surface is covered with a deposition preventive plate so that the film substance does not directly adhere to the anode surface. The conductivity of the surface is ensured, and high density plasma can be obtained stably even when a thick film is coated.

[0020]

EXAMPLES The present invention will be described below based on examples. FIG. 1 is a schematic sectional view of a film forming apparatus used in an example of the present invention. In FIG. 1, in a vacuum chamber 1 in which a depressurized atmosphere can be adjusted, a pressure gradient type plasma beam generator 18 having a composite cathode 8 composed of a tantalum pipe and a LaB 6 donut-shaped disk and an intermediate electrode 7 for electron acceleration,
The anode 9 incorporating the deposition preventive plate 11 for preventing the film from adhering to the surface of the anode 9 was placed facing the wall of the vacuum chamber 1 with the electrical insulating material 10 interposed therebetween. Air core coil 5,
5 was installed so that the magnetic field formed thereby was directed from the plasma beam generator 18 to the anode 9. Then, a plasma generation gas is introduced from the discharge gas introduction port 13 to generate plasma in the plasma beam generator, and DC power is supplied between the plasma beam generator 18 and the anode 9 to form a film. It was drawn out as high-density plasma that was narrowed down to the space in the chamber 2. A pair of permanent magnets 6, 6 are provided between the plasma beam generator 18 and the vacuum chamber 1 in order to convert the drawn high-density plasma into a sheet-like plasma having a surface parallel to the film coating surface of the glass substrate 4. , The plasma beam generator 18 is sandwiched so that the respective N pole surfaces face each other, and
The sheet plasma 12 was formed so that its polar surface was parallel to the glass substrate 4, that is, the sheet plasma 12 was spread in a plane parallel to the glass substrate 4 and compressed in the direction perpendicular to the glass substrate 4. The source gas and the reaction gas are supplied from a gas supply nozzle 14 connected to a source gas introduction pipe 15 and a reaction gas introduction pipe 16 which are arranged at a position opposite to the substrate with respect to the sheet plasma 12, and gas molecules are converted into sheet plasma. Feed was passed through 12. A plurality of gas supply nozzles 14 can be used depending on the area of the glass substrate 4. The raw material gas and the reactive gas are excited and dissociated in the process of passing through the sheet plasma 12 to become reactive, and the glass substrate 4 moving in the film forming chamber 2 is coated with the film. Further, the coating of the film can be performed while heating the glass substrate 4 by the substrate heating heaters 3, 3, 3.

Silicon dioxide was formed using the above-described film forming apparatus.
(SiO2) film, silicon oxynitride (SiOxNy) Membrane, nitrogen
Silicon nitride (Si3NFour) The film was coated on a glass substrate. Example 1 The reaction chamber 2 was set to 5 × 10 5.-4Evacuate to a pressure below Pa with a vacuum pump
Then, argon is used as a discharge gas for plasma generation.
About 40 sccm of (Ar) is introduced from the discharge gas inlet 13.
did. At this time, the pressure in the reaction chamber 2 was 0.03 Pa.
It was In this state, the composite cathode 8 is fed from the DC power source 17 to several amps.
The composite cathode 8 by supplying power of about
Heated. After confirming that the cathode 8 is sufficiently heated,
DC power of about 80 A is applied between the composite cathode 8 and the anode 9.
Then, a steady high-density plasma was generated between the two.
At this time, the shape of plasma is horizontal by the air core coils 5 and 5.
By the composite magnetic field of the magnetic field and the sheet-forming permanent magnets 6, 6,
The plasma emission part has a width of about 45 cm and a thickness of about 2 cm.
It had a tongue-like shape. The discharge voltage is about 60V.
It was About 250 glass substrate 4 prepared in advance
After heating by the substrate heater 3 to reach ℃,
In the state where the above-mentioned plasma is generated, SiHFour Gas
Approximately 400 sccm from the source gas introduction pipe 15 and the reaction gas
Then O2About 1000 sc of gas from the reaction gas introducing pipe 16
cm about 10 cm from the sheet-like plasma emission area
Gas supply set in advance at a position separated by cm
Gas is supplied from the nozzle 14 into the sheet plasma 12.
It was At this time, the pressure in the reaction chamber 2 was about 1 Pa. That
About 50 cm vertically away from the rear gas supply nozzle 14.
Position the glass substrate in the direction of the arrow in FIG.
Repeatedly conveyed so as to pass through the reaction chamber 2 4 times / min.
On the surface of the glass substrate 4 on the gas supply nozzle 14 side,
A silicon film was coated. When performing the above coating
Zuma is very stable, and the discharge voltage immediately after coating is 6
At 5V, a voltage rise of only 5V was observed. Glass
The substrate 4 was taken out of the reaction chamber 2. Si for glass substrate
The infrared absorption spectrum shows that the film with the structure of O2 is coated.
It was confirmed by the measurement of the torque and the refractive index. The characteristics are shown in Table 1.
You The obtained film is transparent and has film surface cracks, abnormal growth,
No defects such as film peeling were observed.

[0022]

[Table 1]

Example 2 A silicon oxynitride film was coated on a glass substrate in the same manner as in Example 1 except that the composition and the amount of the reaction gas introduced were changed as shown in Table 1. Table 1 shows the characteristics. The obtained film is transparent and has film surface cracks, abnormal growth,
No defects such as film peeling were observed. Example 3 A glass substrate was coated with a silicon nitride film in exactly the same manner as in Example 1 except that the composition and introduction amount of the reaction gas were changed as shown in Table 1. The characteristics of the obtained silicon nitride film are shown in Table 1. The film is transparent, film surface cracks, abnormal growth,
No defects such as film peeling were observed. Example 4 A glass substrate was coated with a silicon dioxide film under the same conditions as in Example 1, except that the substrate transport speed was 0.1 m / min and the reaction chamber 2 was passed 12 times. The plasma during film formation was very stable. Table 1 shows the characteristics and film forming conditions of the obtained silicon dioxide film. The film was transparent, and defects such as film surface cracks, abnormal growth, and film peeling were not observed. Comparative Example The same as in Example 1 except that the deposition preventive plate 11 for preventing the film adhesion to the anode 9 was removed and the surface of the anode 9 was exposed in the space of the reaction chamber 2. Then, a silicon dioxide film was coated on the glass substrate. The discharge voltage, which was about 60 V immediately before introducing the raw material gas and the reaction gas into the reaction chamber, increased to about 120 V immediately after introducing the gas, and after a few minutes, stable plasma could not be obtained. When the pressure in the reaction chamber was restored to the atmosphere and the surface of the anode 9 was observed, it was found by a tester that film adhesion was observed and the conductivity of the anode surface was lost. That is, it was found that the plasma could not be stabilized because the electrical insulating material adhered to the surface of the anode and the conductivity of the anode was lowered.

The phenomenon in which the discharge voltage rises sharply and the discharge plasma becomes stable also occurs in the gas composition when coating silicon oxynitride and silicon nitride.

[0025]

According to the present invention, since a high-density discharge plasma can be stably maintained for a long time, a dense and transparent silicon dioxide or silicon nitride having a large adhesion to a substrate and no cracks in the film. The transparent dielectric film of silicon oxynitride can be coated at high speed.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a film forming apparatus used in an example of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum tank, 2 ... Reaction chamber, 3 ... Substrate heating heater, 4 ... Glass base, 5 ... Air core coil, 6
... Permanent magnets, 7 ... Electron acceleration intermediate electrodes, 8 ...
・ Composite electrode, 9 ... Anode, 10 ... Electrical insulator, 1
1 ... Defensive plate, 12 ... Sheet plasma, 13 ...
・ Discharge gas introduction pipe for plasma generation, 14 ... Raw material gas introduction pipe, 16 ... Reactive gas introduction pipe, 17 ... DC power supply, 18 ... Plasma beam generator

Claims (3)

[Claims]
1. A plasma generator having a plasma generation source and an anode, which is installed in a reaction chamber of a vacuum container whose pressure is reduced, is used to supply at least one gas selected from inert gas and hydrogen gas into the reaction chamber. A plasma containing is generated, the generated plasma is confined to a predetermined shape by a magnetic field means to form a high density plasma, and the reaction gas passed through the high density plasma and the source gas containing silicon are installed in the reaction chamber. In the method of coating a substrate with a dielectric film to be supplied to the surface of a substrate, the surface of the anode is covered with an adhesion preventive plate having an opening and electrically insulated from the anode, Is a gas of silane or a silane derivative, the reaction gas is at least one selected from the group of reaction gases of oxygen, nitrogen, nitrous oxide, and ammonia, and the supply volume ratio thereof is the raw material gas. : A transparent dielectric film made of silicon and at least one of oxygen and nitrogen, wherein the reaction gas is in the range of 1: 2 to 1: 5 and the pressure in the reaction chamber is 5.0 Pa or less. How to coat on.
2. An inert gas is supplied into a space surrounded by the anode and the deposition preventive plate to reduce generation of an electrically insulating substance on the surface of the anode. A method of coating the transparent dielectric film according to 1 on a substrate.
3. The method for coating a substrate with a transparent dielectric film according to claim 1, wherein the anode is made of tantalum metal.
JP4255197A 1992-09-25 1992-09-25 Method of covering upper section of base body with transparent dielectric film Pending JPH06112133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4255197A JPH06112133A (en) 1992-09-25 1992-09-25 Method of covering upper section of base body with transparent dielectric film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4255197A JPH06112133A (en) 1992-09-25 1992-09-25 Method of covering upper section of base body with transparent dielectric film

Publications (1)

Publication Number Publication Date
JPH06112133A true JPH06112133A (en) 1994-04-22

Family

ID=17275380

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH06112133A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same
JP2006334406A (en) * 2005-05-31 2006-12-14 Axetis Ag Vascular stent
JP2007002272A (en) * 2005-06-21 2007-01-11 Stanley Electric Co Ltd Plasma cvd system
JP2010533066A (en) * 2007-07-10 2010-10-21 イノヴァライト インコーポレイテッド Method and apparatus for generating group IV nanoparticles in a flow-through plasma reactor
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same
JP2006334406A (en) * 2005-05-31 2006-12-14 Axetis Ag Vascular stent
JP2007002272A (en) * 2005-06-21 2007-01-11 Stanley Electric Co Ltd Plasma cvd system
JP4683418B2 (en) * 2005-06-21 2011-05-18 スタンレー電気株式会社 Plasma CVD equipment
JP2010533066A (en) * 2007-07-10 2010-10-21 イノヴァライト インコーポレイテッド Method and apparatus for generating group IV nanoparticles in a flow-through plasma reactor
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles

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