JPH0347730B2 - - Google Patents
Info
- Publication number
- JPH0347730B2 JPH0347730B2 JP56065783A JP6578381A JPH0347730B2 JP H0347730 B2 JPH0347730 B2 JP H0347730B2 JP 56065783 A JP56065783 A JP 56065783A JP 6578381 A JP6578381 A JP 6578381A JP H0347730 B2 JPH0347730 B2 JP H0347730B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- sample
- laser beam
- silicon
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000137 annealing Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 239000000523 sample Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578381A JPS57180120A (en) | 1981-04-30 | 1981-04-30 | Monitoring device for beam annealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578381A JPS57180120A (en) | 1981-04-30 | 1981-04-30 | Monitoring device for beam annealing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180120A JPS57180120A (en) | 1982-11-06 |
| JPH0347730B2 true JPH0347730B2 (cg-RX-API-DMAC7.html) | 1991-07-22 |
Family
ID=13296973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6578381A Granted JPS57180120A (en) | 1981-04-30 | 1981-04-30 | Monitoring device for beam annealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180120A (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854803A (en) | 1995-01-12 | 1998-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser illumination system |
| US20070117287A1 (en) | 2005-11-23 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| US9498845B2 (en) | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
| JP5279260B2 (ja) * | 2007-12-27 | 2013-09-04 | 株式会社半導体エネルギー研究所 | 半導体層の評価方法 |
-
1981
- 1981-04-30 JP JP6578381A patent/JPS57180120A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LITTERS=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57180120A (en) | 1982-11-06 |
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