JPH0345906B2 - - Google Patents
Info
- Publication number
- JPH0345906B2 JPH0345906B2 JP13040884A JP13040884A JPH0345906B2 JP H0345906 B2 JPH0345906 B2 JP H0345906B2 JP 13040884 A JP13040884 A JP 13040884A JP 13040884 A JP13040884 A JP 13040884A JP H0345906 B2 JPH0345906 B2 JP H0345906B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- island
- regions
- emitting region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 230000007547 defect Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 11
- 238000005253 cladding Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は半導体発光素子、特に面発光型発光
素子の発光領域の構造に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a structure of a light emitting region of a semiconductor light emitting device, particularly a surface emitting type light emitting device.
（従来の技術）
従来から種々の構造の半導体発光素子が提案さ
れている。第２図は従来公知の面発光型半導体発
光素子の一例であるAlGaAs／GaAsダブルヘテ
ロ構造の発光ダイオードを示す断面図である。こ
の発光ダイオードはｐ−GaAs基板２０上にｐ−
GaAs電流狭窄層（ブロツキング層ともいう）２
１を有し、その窓２１ａの所で基板面２０ａが露
出している。この電流狭窄層２１及び露出基板面
２０ａ上に順次にｐ−AlxGa1-xAsの第一クラツ
ド層２２、AlyGa1-yAsの活性層２３、ｎ−
AlzGa1-zAsの第二クラツド層２４、ｎ−GaAsの
キヤツプ層２５が形成されている。この活性層２
３はｐ型、ｎ型又はノンドープ型のいずれであつ
ても良い。また、混晶の組成比ｘ、ｙ、ｚの間に
はｙ＜ｘ、ｙ＜ｚの関係がある。また、キヤツプ
層２５は発光領域２６から発光した光を取り出す
ための光取り出し窓２５ａが形成されている。
尚、２７はキヤツプ層２５と、基板２０との間に
バイアス電圧を印加するため、下側電極２８およ
び上側電極２９間に接続される電源である。(Prior Art) Semiconductor light emitting devices with various structures have been proposed in the past. FIG. 2 is a sectional view showing a light emitting diode with an AlGaAs/GaAs double hetero structure, which is an example of a conventionally known surface-emitting type semiconductor light emitting device. This light emitting diode is mounted on a p-GaAs substrate 20.
GaAs current confinement layer (also called blocking layer) 2
1, and the substrate surface 20a is exposed at the window 21a. A first cladding layer 22 of p-AlxGa 1-x As, an active layer 23 of AlyGa 1-y As, an n-
A second clad layer 24 of AlzGa 1-z As and a cap layer 25 of n-GaAs are formed. This active layer 2
3 may be p-type, n-type, or non-doped. Furthermore, there is a relationship of y<x and y<z among the composition ratios x, y, and z of the mixed crystal. Further, the cap layer 25 is formed with a light extraction window 25a for extracting light emitted from the light emitting region 26.
Note that 27 is a power source connected between the lower electrode 28 and the upper electrode 29 in order to apply a bias voltage between the cap layer 25 and the substrate 20.
このような構造の従来の発光素子の特色は発光
領域２６の寸法Ｄを出来るだけ広くとることによ
り所定の駆動電流Ｉに対し発光領域２６での電流
密度を下げようとするものであつた。 A feature of the conventional light emitting device having such a structure is that the current density in the light emitting region 26 is lowered for a given drive current I by making the dimension D of the light emitting region 26 as wide as possible.
このように発光領域を広げる理由は次のように
考えられる。発光領域２６に結晶欠陥によるダー
クスポツト欠陥（DSD）がもともと存在してお
り、これらダークスポツト欠陥（DSD）が発振
光を吸収して増殖し線状欠陥（DLD）へと進展
していくというメカニズムで発光素子が劣化す
る。この欠陥増殖の速さは発光領域での電流密度
に強く依存する。従つて、発光素子の長寿命化を
図ろうとするために、発光領域の面積を出来るだ
け広げて電流密度を低減させることが効果的であ
ると考えられるからである。 The reason for expanding the light emitting area in this way is considered to be as follows. Dark spot defects (DSD) caused by crystal defects originally exist in the light emitting region 26, and the mechanism is that these dark spot defects (DSD) absorb oscillation light, multiply, and develop into linear defects (DLD). The light emitting element deteriorates. The speed of this defect growth strongly depends on the current density in the light emitting region. Therefore, in order to extend the life of the light emitting element, it is considered effective to widen the area of the light emitting region as much as possible to reduce the current density.
（発明が解決しようとする問題点）
しかしながら、発光領域を広げることの出来る
範囲も限界があり、従つて、発光素子の長寿命化
もそれほど期待出来ないという欠点があつた。(Problems to be Solved by the Invention) However, there is a limit to the range in which the light emitting region can be expanded, and therefore, there is a drawback that a long life of the light emitting element cannot be expected to be very long.
この発明の目的は、発光素子の接合部の構造を
工夫するという、従来方法とは全く別の手段によ
り、発光素子の長寿命化を図つた半導体発光素子
を提供することにある。 An object of the present invention is to provide a semiconductor light-emitting device that can extend the life of the light-emitting device by a means completely different from the conventional method of devising the structure of the joint portion of the light-emitting device.
（問題点を解決するための手段）
この目的の達成を図るため、この発明によれ
ば、pnp内部電流狭窄構造の非発光領域でそれぞ
れ取囲まれた複数個の微細な島状発光領域と、前
記基板の裏面及び前記非発光領域上に形成され、
前記複数の島状発光領域に共通に電圧を印加する
ための一対の電極とを有し、前記複数の島状発光
領域は全体として実質的に一個の発光領域を形成
してなることを特徴とする。(Means for Solving the Problems) In order to achieve this object, according to the present invention, a plurality of fine island-like light-emitting regions each surrounded by a non-light-emitting region of a PNP internal current confinement structure; formed on the back surface of the substrate and the non-light emitting region,
and a pair of electrodes for commonly applying a voltage to the plurality of island-shaped light-emitting regions, and the plurality of island-shaped light-emitting regions as a whole substantially form one light-emitting region. do.
（作用）
このように構成すれば、一つの半導体発光素子
の発光領域を、上下の一対の電極を共通にした状
態で、微細の島状発光領域に細分化し、これら一
個一個の島状発光領域が微細な島状発光素子を形
成する構造であるから、各島状発光領域の寸法を
結晶欠陥の存在を無視出来る程度の大きさとする
ことが出来ると共に、非発光領域によつて隣接す
る島状発光領域に結晶欠陥に伝播を防ぐことが出
来る、従つて、発光素子の劣化の防止を図ること
が出来、発光素子の長寿命化を図ることが出来
る。(Function) With this configuration, the light-emitting region of one semiconductor light-emitting element is subdivided into fine island-like light-emitting regions with a pair of upper and lower electrodes in common, and each of these island-like light-emitting regions Since the structure forms fine island-like light-emitting elements, the dimensions of each island-like light-emitting region can be made small enough to ignore the presence of crystal defects, and the adjacent island-like light-emitting regions are separated by non-light-emitting regions. Propagation of crystal defects to the light emitting region can be prevented, and therefore, deterioration of the light emitting element can be prevented, and the life of the light emitting element can be extended.
（実施例）
以下、図面を参照して、この発明の実施例につ
き説明する。(Embodiments) Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図Ａはこの発明の半導体発光素子の一実施
例の一部分を示す略線的平面図（但し、電極は省
略してある）であり、第１図ＢはそのＡ−Ａ線の
断面図である。 FIG. 1A is a schematic plan view showing a part of an embodiment of the semiconductor light emitting device of the present invention (however, electrodes are omitted), and FIG. 1B is a cross-sectional view taken along line A-A of the same. It is.
第１図Ａ及びＢに示す実施例では、１はｐ型基
板、２はｎ型電流狭窄層、３はｐ型第一クラツド
層、４は活性層、５はｎ型第二クラツド層、６は
ｎ型キヤツプ層、及び７は電源で、基本的には第
２図の構造と同一である。 In the embodiment shown in FIGS. 1A and B, 1 is a p-type substrate, 2 is an n-type current confinement layer, 3 is a p-type first cladding layer, 4 is an active layer, 5 is an n-type second cladding layer, and 6 is a p-type substrate. is an n-type cap layer, and 7 is a power supply, which is basically the same structure as that shown in FIG.
この発明によれば、一個の半導体発光素子の、
第１図Ａに破線８で示す本来有効的な発光領域内
に離散的に複数個の微細な島状発光領域９ａ，９
ｂ，９ｃ，９ｄ，９ｅ，９ｆ，……に細分化し、
これら各島状発光領域９ａ〜９ｆ，……の周囲を
非発光領域でそれぞれ取囲んだ構造とする。そし
て、この発光素子の基板１の裏面に下側電極１０
を設け、非発光領域上に各島状発光領域に共通の
上側電極１１を設け、この上側電極１１および下
側電極１０間に電源７を接続して複数の全ての島
状発光領域に共通にバイアス電圧を印加する構造
とする。これら微細な島状発光領域９ａ〜９ｆ，
……の各々をｎ型電流狭窄層２、ｐ型第一クラツ
ド層３、活性層４、ｎ型第二クラツド層５、ｎ型
キヤツプ層６から成る独立した微細な島状発光素
子で形成するので、電流狭窄層２とこれに隣接す
る基板１及び第一クラツド層３の導電型がpnp構
造となるので、バイアス電圧を印加した時この
pnp構造の所では電流が流れないので、非発光領
域を各島状発光素子に周囲の電流狭窄層２で形成
することが出来る。 According to this invention, one semiconductor light emitting device has
A plurality of fine island-like light-emitting regions 9a, 9 are discretely formed within the originally effective light-emitting region shown by the broken line 8 in FIG. 1A.
Subdivided into b, 9c, 9d, 9e, 9f,...
Each of these island-shaped light emitting regions 9a to 9f, . . . is surrounded by a non-light emitting region. A lower electrode 10 is placed on the back surface of the substrate 1 of this light emitting element.
An upper electrode 11 common to each of the island-like light-emitting regions is provided on the non-light-emitting region, and a power source 7 is connected between the upper electrode 11 and the lower electrode 10 to provide a power supply common to all the plurality of island-like light-emitting regions. The structure is such that a bias voltage is applied. These fine island-like light emitting regions 9a to 9f,
Each of . Therefore, the conductivity type of the current confinement layer 2 and the adjacent substrate 1 and first cladding layer 3 becomes a pnp structure, so when a bias voltage is applied, this
Since no current flows in the pnp structure, a non-emissive region can be formed in each island-shaped light emitting element by the surrounding current confinement layer 2.
次に、Ａ−Ａ線に沿つて測つたときの島状発光
領域９ａ〜９ｃ及び非発光領域の寸法d1及びd2に
つき説明する。 Next, the dimensions d 1 and d 2 of the island-shaped light emitting regions 9a to 9c and the non-light emitting regions when measured along the line A-A will be explained.
発光領域内に結晶欠陥が一個でも存在すると、
素子劣化の原因となるので、島状発光領域９ａ，
９ｂ，９ｃの寸法d1は出来るだけ小さくし、結晶
欠陥が入り込む確率を低減することが必要であ
る。従つて、通常は寸法d1を50〜10μｍ程度とす
るのが好適である。 If even one crystal defect exists within the light emitting region,
Since this may cause device deterioration, the island-shaped light emitting regions 9a,
It is necessary to make the dimension d 1 of 9b and 9c as small as possible to reduce the probability that crystal defects will enter. Therefore, it is usually preferable that the dimension d1 is approximately 50 to 10 μm.
一方、非発光領域すなわち隣接する島状発光領
域間の寸法d2は、かりに島状発光領域９ａ，９
ｂ，９ｃに結晶欠陥が発生しても、隣接する島状
発光素子にこの欠陥が伝播して前述したダークス
ポツト欠陥から線状欠陥へと増殖するのを防止出
来る程度の大きさ、例えば、通常は10μｍの以上
とするのが好適である。 On the other hand, the dimension d 2 between the non-light-emitting regions, that is, the adjacent island-like light-emitting regions 9a, 9
Even if a crystal defect occurs in portions b and 9c, the size is large enough to prevent the defect from propagating to the adjacent island-shaped light emitting element and multiplying from the aforementioned dark spot defect to a linear defect, for example, a normal crystal defect. is preferably 10 μm or more.
上述した実施例では、微細な島状発光領域を平
面的に見た場合円形に形成した例を示したが、こ
れに限定されるものではなく、結晶欠陥が入り込
む確率を低減させかつ隣接する各島状発光領域間
で欠陥の伝播を抑えることが出来る形状であれば
任意の形状であつて良い。 In the above-mentioned embodiment, an example was shown in which the fine island-like light-emitting region was formed into a circular shape when viewed in plan, but the invention is not limited to this, and the probability of crystal defects entering is reduced and each adjacent The shape may be any shape as long as it can suppress the propagation of defects between the island-like light emitting regions.
また、上述した半導体発光素子の基板の導電型
をｐ型としたが、ｎ型基板を用い、これに伴ない
その上側に積層する各層の導電型を反対導電型と
して構成することが出来る。 Further, although the conductivity type of the substrate of the semiconductor light emitting device described above is p-type, it is also possible to use an n-type substrate so that the conductivity types of each layer laminated above the n-type substrate are opposite conductivity types.
さらに、基板状に積層する発光に寄与する層構
造は上述した図示の構造のものに限定されるもの
ではなく、どのような構造であつても良い。 Furthermore, the layer structure that contributes to light emission and is laminated in the shape of a substrate is not limited to the above-described structure shown in the drawings, but may be any structure.
（発明の効果）
上述した説明からも明らかなように、この発明
半導体発光素子の構造によれば、本来の半導体発
光素子一個分の発光領域を微細な多数の島状発光
領域に細分化し、各島状発光領域内での結晶欠陥
の存在確率を低減することが出来ると共に、隣接
する島状発光領域間を非発光領域で分離してある
ので、結晶欠陥の増殖を抑制することが出来る
る。従つて、この発明の半導体発光素子によれ
ば、従来の半導体発光素子の場合よりも、高出力
化及び長寿命化を図ることが出来る。また、各発
光領域に対し電極が共通に設けられているので、
これら発光領域を同時に発光させることができ
る。(Effects of the Invention) As is clear from the above description, according to the structure of the semiconductor light emitting device of the present invention, the original light emitting region of one semiconductor light emitting device is subdivided into a large number of fine island-like light emitting regions, and each The probability of the existence of crystal defects within the island-like light-emitting regions can be reduced, and since adjacent island-like light-emitting regions are separated by non-light-emitting regions, the proliferation of crystal defects can be suppressed. Therefore, according to the semiconductor light emitting device of the present invention, higher output and longer life can be achieved than in the case of conventional semiconductor light emitting devices. In addition, since the electrode is provided in common for each light emitting region,
These light emitting regions can be caused to emit light simultaneously.
第１図Ａ及びＢはこの発明の半導体発光素子の
構造を説明するための略線的略線的平面図及びそ
のＡ−Ａ線に沿つた断面図、第２図は従来の半導
体発光素子を示す断面図である。
１……ｐ型基板、２……ｎ型電流狭窄層（又は
非発光領域）、３……ｐ型第一クラツド層、４…
…活性層、５……ｎ型第二クラツド層、６……ｎ
型キヤツプ層、７……電源、８……有効的な発光
領域、９ａ〜９ｆ，……微細な島状発光領域。
FIGS. 1A and 1B are a schematic plan view and a cross-sectional view taken along line A-A of the semiconductor light emitting device of the present invention, and FIG. 2 is a diagram showing a conventional semiconductor light emitting device. FIG. DESCRIPTION OF SYMBOLS 1...p-type substrate, 2...n-type current confinement layer (or non-light emitting region), 3...p-type first cladding layer, 4...
...active layer, 5...n-type second cladding layer, 6...n
Mold cap layer, 7...Power source, 8...Effective light emitting area, 9a to 9f,...Fine island-like light emitting area.
Claims (1)
発光型の半導体発光素子において、 pnp内部電流狭窄構造の非発光領域でそれぞれ
取囲まれた複数個の微細な島状発光領域と、 前記基板の裏面及び前記非発光領域上に形成さ
れ、前記複数の島状発光領域に共通に電圧を印加
するための一対の電極とを有し、 前記複数の島状発光領域は全体として実質的に
一個の発光領域を形成してなる ことを特徴とする半導体発光素子。[Scope of Claims] 1. In a surface-emitting semiconductor light emitting device having a light emitting region with a pn junction structure on a substrate, a plurality of fine light emitting islands each surrounded by a non-emitting region having a pnp internal current confinement structure. a pair of electrodes formed on the back surface of the substrate and on the non-light-emitting region for applying a voltage in common to the plurality of island-like light-emitting regions, and the plurality of island-like light-emitting regions cover the entirety of the island-like light-emitting regions. What is claimed is: 1. A semiconductor light emitting device characterized in that substantially one light emitting region is formed as a semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130408A JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130408A JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS618981A JPS618981A (en) | 1986-01-16 |
| JPH0345906B2 true JPH0345906B2 (en) | 1991-07-12 |
Family
ID=15033560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59130408A Granted JPS618981A (en) | 1984-06-23 | 1984-06-23 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS618981A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002103811A1 (en) * | 2001-06-15 | 2002-12-27 | Nichia Corporation | Nitride semiconductor light emitting device |
| CN1324772C (en) * | 2002-06-19 | 2007-07-04 | 日本电信电话株式会社 | Semiconductor light-emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1117113A (en) * | 1913-10-04 | 1914-11-10 | Solomon R Wagg | Method of treating paper. |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
-
1984
- 1984-06-23 JP JP59130408A patent/JPS618981A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1117113A (en) * | 1913-10-04 | 1914-11-10 | Solomon R Wagg | Method of treating paper. |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS618981A (en) | 1986-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4910571A (en) | Optical semiconductor device | |
| KR920020697A (en) | Compound Semiconductor Device | |
| JP3095545B2 (en) | Surface emitting semiconductor light emitting device and method of manufacturing the same | |
| JPH07111339A (en) | Surface emission type semiconductor light emitting device | |
| EP0501246B1 (en) | Opto-electronic switch device | |
| EP0260439B1 (en) | Semiconductor light emission system | |
| JPH0345906B2 (en) | ||
| US4581743A (en) | Semiconductor laser having an inverted layer in a stepped offset portion | |
| JP2009238845A (en) | Light-emitting module and method of manufacturing the same | |
| JP3214869B2 (en) | Optical function element with reset function | |
| JPH1041583A (en) | Semiconductor light-emitting device | |
| JPS6257259A (en) | Light emitting semiconductor element | |
| JP2018186213A (en) | Vertical resonator type light-emitting element | |
| JPH07169992A (en) | Semiconductor light emitter | |
| JPH11220208A (en) | Semiconductor laser diode | |
| JPS60213076A (en) | Semiconductor laser | |
| JPS61214591A (en) | Semiconductor laser element | |
| JPH07202259A (en) | Gaalas light emitting diode | |
| JPS6123380A (en) | Semiconductor light emitting element | |
| JPH06268331A (en) | Semiconductor light emitting device | |
| JPS61276389A (en) | Semiconductor optical element | |
| JPH0779181B2 (en) | Optical integrated device | |
| JPH05283739A (en) | Semiconductor end light emitting element | |
| JP2002335013A (en) | High density emitting array | |
| JPS62279688A (en) | Manufacture of semiconductor laser element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |