JPH034537A - Flattening of semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate a flattening of a device in a process and to remove a cause to cause the diconnection of an Al wiring and the like by a method wherein the unnecessary projected material of the device is removed using shock waves and shock wave plasma and the flattening of the device is performed. CONSTITUTION:A semiconductor device 2 having a projected material formed by an OSELO element isolation method is carried in an electromagnetic drive T-type impact tube 1 through a semiconductor device carrying-in port 4 and the device 2 is fixed in the tube 1. After sample gas is supplied, a charging is performed in a capacitor bank 14 and after the charging, a vacuum switch 15 is made to start by a pulse generator 16 and discharge is performed between upper and lower electrodes 12 and 13. By the generation of plasma due to an electron avalanche, a magnetic field B20 is made to generate by a current 19 and strong shock waves and shock wave plasma 23 are produced by plasma 22 produced by a strong Lorentz force F21. Thereby, the projected material of the device 2 fixed in the tube 1 is blown off and the device 2 subsequent to the removal of the projected material is cleaned.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for planarizing a semiconductor device.

Conventional technology Conventional In element isolation technology, 03ELO (offse
In the above 03ELO element isolation method, direct image 5isNa is removed for the layered structure of patterned thermal oxide film, 5isNa film, and CVD oxide film without intervening the thermal oxide film for stress relief. Membranes and CVDI! Forms a chemical film
After the above formation, field ion implantation is performed using the anisotropic etching technique to form sidewalls consisting of the Si*N4 film and the CVD oxide film by utilizing the step at the end of the laminated mask layer. Next, the CVD oxide film was removed.
Regarding the 05ELO element isolation method (for example, ultra-high-speed digital device Series-X ultra-high-speed MOS device; Baifukan (19
Although it is described in pages 140 to 141 (1986), Fig. 2 is an example of the 03ELO element isolation method. 27 is a boron ion implanted part, and the problem to be solved by the invention is strength.As shown in FIG. Object 25 remains.

The protrusions 25 are difficult to remove by cleaning with liquid, and when removing them, there is a problem that when applying AI (aluminum) wiring above the protrusions, the protrusions 25 may cause breaks in the wiring, which in turn may adversely affect the electrical characteristics. Invention ζ The present invention has been made in view of the above-mentioned problems, and its purpose is to provide a method for planarizing a semiconductor device that can remove protrusions in a simple manner. In order to solve the above problems, an electromagnetic drive T-shaped shock wave for generating a driving plasma, an upper electrode, a lower electrode, a capacitor, a vacuum switch, a pulse generator, and a Lorentz force, which is a propulsive force, is applied to the driving plasma. A device comprising a belt-shaped conductor (backstrap) for generating shock waves and shock wave plasma, in which a semiconductor device having a protrusion is fixed within the device;
The semiconductor device is configured to planarize the semiconductor device using the shock wave and shock wave plasma, and then exhaust the unnecessary protrusions of the semiconductor device and the sample gas that became the sample of the shock wave plasma. According to the above-described configuration, the present invention utilizes a high voltage between the upper and lower electrodes by triggering a vacuum switch using a pulse generator to activate the charge stored in a capacitor bank consisting of several capacitors and a charging circuit. Attracts an electron avalanche and generates so-called plasma & -4 The interaction between the magnetic field B created by the backstrap and the current I caused by the plasma generation causes the Lorentz force F, and the plasma is electromagnetically generated using the Lorentz force F as a driving force. The plasma can also be pushed out to the left of the driving T-shaped shock wave tube When the plasma is used as a driving plasma (acts as a piston) and the gas in front of the driving plasma is pushed out, a shock wave and shock wave plasma are not generated in front of the driving plasma, resulting in 41 shock waves. It is also possible to remove unnecessary protrusions from the semiconductor device by passing shock wave plasma over the top of the semiconductor device that has protrusions and using the power of the shock waves and shock wave plasma. The gas (
EXAMPLE 1 Hereinafter, an example of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view of the structure of an apparatus for explaining planarization of a semiconductor device in an embodiment of the present invention. In FIG. 1, 1 is an electromagnetically driven single-shaped shock tube; 3 is a vacuum chuck for the semiconductor device, 4 is a semiconductor device carry-in U2.5 is an exhaust 0, 6 is an exhaust bomb "j, 7 is a diffusion bomb, 8 is a gas cylinder, 9 is a gas supply valve, 10 is a pressure i
t 11 is the vacuum pressure ratio, 12 is the upper electrode, 13 is the lower electrode, 14 is the capacitor, 15 is the vacuum switch, 16 is the pulse generator 17 is the strip conductor (back strap), 18 is the sample gas injection Fl, 19 is due to plasma generation Current ■, 20 is magnetic field & 21 is Lorentz force F, 2
2 is a driving plasma 23 is a shock wave and a shock wave plasma The operation of the planarization method for semiconductor devices using the device configured as described above will be explained below. Semiconductor device 2 with protrusions formed by 08ELO element isolation method etc. is brought in.
A vacuum chuck 3 installed in the electromagnetically driven single-shaped shock tube 1 is used to fix the semiconductor device 2 with protrusions.
Using the exhaust pump 6 and the diffusion pump 7, the inside of the electromagnetically driven single-shaped shock wave tube 1 is brought into a vacuum state (1 x 10
-' [Torr] degree) The degree of vacuum at that time is confirmed using the vacuum pressure gauge 11. using the sample gas inlet 18 to inject the required amount (10 to 1
The above sample gas supply device is a comp pump consisting of several capacitors and a charging circuit.
The bank 14 is charged (approximately 12 [kV], degrees).

After the above charging, the vacuum switch 1 is activated by the pulse generator 16.
5 is started, and discharge is started between the upper electrode 12 and the lower electrode 13. After the start of the discharge, plasma is generated due to the electron avalanche. Due to the generation of the plasma, a current 119 due to plasma generation flows. Result A strong Lorentz force F21 due to the interaction between the current 119 generated by the plasma and the magnetic field B20 acts on the above plasma in the direction of the arrow. When the driving plasma 22 is pushed up into the first part of the shock wave tube and further pushed forward by the Lorentz force F21 and the above plasma, a strong shock wave and shock wave plasma 23 are generated in front of the driving plasma 22. (Yo) Using the above shock wave, the above electromagnetic drive single-shaped shock wave tube 1
The unnecessary protrusions of the semiconductor device 2 having protrusions fixed therein are blown away, and the semiconductor device after the protrusions have been removed is cleaned by shock wave plasma following the IF bombardment wave. In other words, the semiconductor device having protrusions can be planarized (＼ After the above cleaning, the protrusions, the shock wave, and the sample gas of the shock wave plasma can be immediately evacuated by the exhaust pump 6 and the diffusion pump 7. As is clear from the explanation above, the present invention provides
Unnecessary protrusions on semiconductor devices formed by LO element isolation methods can be removed using shock waves and shock wave plasma, and semiconductor devices can be planarized with a simple method, making the process after planarization more uniform. This is extremely valuable in practical terms, as it facilitates the process and eliminates the causes of disconnections in LAI wiring.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of the structure of a device for explaining a planarization method for a semiconductor device in one embodiment of the present invention. 1 is a cross-sectional view showing an example of a certain semiconductor device.・Upper type! 13... Upper electrode 14...
・Capacitor Pankyu 15...Vacuum switch, 16
...Pulse generation image 17...Strip conductor (backstrap), 19...Current due to plasma generation 1.20.
...Magnetic field &21...Lorentz force F, 22...Driving plasma 23...Shock wave and shock wave plasma.

Claims (1)

[Claims] An electromagnetically driven T-shaped balanced wave tube, an upper electrode, a lower electrode, a capacitor puncture, a vacuum switch, and a pulse generator are used to generate a driving plasma, and a Lorentz force as a propulsive force is applied to the driving plasma to generate a shock wave and In an apparatus having a belt-shaped conductor (backstrap) for generating shock wave plasma, a semiconductor device having a protrusion is fixed in the apparatus, and the equilibrated wave and the equilibrated wave plasma are used to flatten the semiconductor device. 1. A method for planarizing a semiconductor device, which comprises exhausting unnecessary protrusions of the semiconductor device and a sample gas serving as an acoustic wave plasma sample.