JPH0342488B2 - - Google Patents
Info
- Publication number
- JPH0342488B2 JPH0342488B2 JP18503084A JP18503084A JPH0342488B2 JP H0342488 B2 JPH0342488 B2 JP H0342488B2 JP 18503084 A JP18503084 A JP 18503084A JP 18503084 A JP18503084 A JP 18503084A JP H0342488 B2 JPH0342488 B2 JP H0342488B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductor
- capacitor
- insulating film
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 43
- 239000003990 capacitor Substances 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000010408 film Substances 0.000 description 70
- 238000009413 insulation Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012778 molding material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RBHNZROBARWZDN-UHFFFAOYSA-L cadmium(2+);icosanoate Chemical compound [Cd+2].CCCCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCCCC([O-])=O RBHNZROBARWZDN-UHFFFAOYSA-L 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、コンデンサを構成する材料、特に
絶縁膜および導電体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to materials constituting a capacitor, particularly to an insulating film and a conductor.
従来、コンデンサを構成する絶縁膜としては、
酸化被膜や蒸着膜などが、導電体としては、金属
板や蒸着膜などが使われていた。
Conventionally, the insulating film that constitutes a capacitor is
Oxide films and vapor-deposited films were used as conductors, and metal plates and vapor-deposited films were used as conductors.
しかし従来のコンデンサは、絶縁膜の厚さが、
104Å以上と厚いために、大容量のコンデンサと
することが、きわめて難しかつた。コンデンサの
容量は、絶縁膜の厚さの逆数に比例するため、薄
ければ薄いほど容量が大きくなるが、今までの絶
縁膜の作り方では、薄くすることが難しく、また
薄くした場合には、ピンホールや不純物による導
電部分の影響により、絶縁膜として十分な特性を
もつものとすることが、出来なかつた。コンデン
サの特性として望まれるものは、小型、大容量、
高対圧、高絶縁性、高周波特性、などであるが、
従来のコンデンサの絶縁膜では、膜厚が厚く、ピ
ンホール、不純物による導電部が多く、膜厚が不
均一であるため、小型、大容量、高耐圧、高絶縁
性のものが出来なかつた。
However, in conventional capacitors, the thickness of the insulating film is
Because it is thick, at more than 10 4 Å, it is extremely difficult to make it into a large-capacity capacitor. The capacitance of a capacitor is proportional to the reciprocal of the thickness of the insulating film, so the thinner the insulating film, the greater the capacitance. Due to the effects of pinholes and impurities on the conductive portion, it was not possible to obtain sufficient properties as an insulating film. The desirable characteristics of a capacitor are small size, large capacity,
High voltage resistance, high insulation properties, high frequency characteristics, etc.
Conventional insulating films for capacitors are thick, have many pinholes and conductive parts due to impurities, and are uneven in film thickness, making it impossible to create capacitors that are small, large in capacity, high withstand voltage, and highly insulative.
また導電体として、金属板をもちいたものは、
小型化しにくく、蒸着膜等の膜をもちいたもの
は、製造効率がよくなかつた。 Also, those using a metal plate as a conductor,
It was difficult to miniaturize, and those using films such as vapor-deposited films were not very efficient in manufacturing.
そこで本発明は従来のこのような欠点を解決す
るため、薄く、ピンホールや、不純物による導電
部がなく、膜厚が均一な絶縁膜でコンデンサを形
成し、さらに小型で製造効率の高いコンデンサと
することを目的としている。 Therefore, in order to solve these conventional drawbacks, the present invention forms a capacitor using an insulating film that is thin, has no pinholes or conductive parts due to impurities, and has a uniform film thickness, and creates a capacitor that is more compact and has high manufacturing efficiency. It is intended to.
上記問題点を解決するためにこの発明は、絶縁
膜としてラングミユア・プロジエツト膜（以下、
LB膜という）を用いるようにした。
In order to solve the above problems, the present invention uses a Langmiur projectile film (hereinafter referred to as
LB film) was used.
〔作用〕
上記のように絶縁膜にLB膜を使用したコンデ
ンサは、LB膜のもつ、超薄膜、ピンホールがな
い、不純物による導電部がない、膜厚が均一であ
る等の特性のため、小型、大容量、高耐圧、高絶
縁性であるコンデンサとすることができ、さらに
導電体を高分子導電体あるいはLB膜で構成すれ
ば、より小型で、製造効率のよいコンデンサとす
ることができる。[Function] As mentioned above, capacitors using LB film as an insulating film have the following characteristics: LB film is ultra-thin, has no pinholes, has no conductive parts due to impurities, and has a uniform film thickness. It is possible to create a capacitor that is small, large capacity, high withstand voltage, and highly insulating. Furthermore, if the conductor is composed of a polymer conductor or LB film, it is possible to create a capacitor that is smaller and more efficient in manufacturing. .
以下に本発明の実施例を図面にもとづいて説明
する。第１図、第２図は、本発明によるコンデン
サの構成概念図である。
Embodiments of the present invention will be described below based on the drawings. 1 and 2 are conceptual diagrams of the structure of a capacitor according to the present invention.
第１図において、LB膜２、（たとえばアラキン
酸カドニウム）は導電体１および１′の間に設け
られ、さらにそれらの両側はモールド材３および
３′に被われ、導電体１および１′からはリード線
４および４′が出ている。第２図は、第１図の断
面図である。 In FIG. 1, an LB film 2, (for example cadmium arachinate) is provided between the conductors 1 and 1', further covered with molding materials 3 and 3' on both sides, and separated from the conductors 1 and 1'. Lead wires 4 and 4' are coming out. FIG. 2 is a sectional view of FIG. 1.
導電体は、金属あるいは有機導電体の薄膜が使
用される。またリード線は、金、銀白金等が使用
され、モールド材は、エポキシ系、ポリイミド
系、ポリアミド系等のモールド材が使用される。 As the conductor, a thin film of metal or organic conductor is used. Further, the lead wires are made of gold, silver platinum, etc., and the molding material is epoxy, polyimide, polyamide, or the like.
絶縁膜をLB膜で構成することにより、膜厚を
数百Åオーダーにすることが出来、その容量を数
十倍以上にすることが出来た。またピンホールや
不純物による導電部がなくなり、高絶縁性のコン
デンサとなつた。またLB膜２の膜厚が均一であ
ることもてつだつて、耐圧が向上した。 By configuring the insulating film with an LB film, the film thickness could be reduced to the order of several hundred Å, and the capacitance could be increased several tens of times or more. Additionally, there are no conductive parts caused by pinholes or impurities, resulting in a highly insulating capacitor. Furthermore, the breakdown voltage was improved due to the uniform thickness of the LB film 2.
本発明による具体的実施例の断面図を第３図
に、その平面図を第４図に示す。 A sectional view of a specific embodiment of the present invention is shown in FIG. 3, and a plan view thereof is shown in FIG. 4.
この例では、絶縁膜にLB膜絶縁膜を用いる他、
導電体もLB膜導電体を用いている。この例につ
いて、製法も含めて説明する。 In this example, in addition to using the LB film insulation film as the insulation film,
The conductor is also an LB film conductor. This example will be explained including the manufacturing method.
基板６はガラス基板が用いられ、この基板６面
上にLB膜導電体５（この例では銅フタロシアニ
ンLB膜）が形成されている。LB膜の形成は、
LB膜形成法として知られている垂直引き上げ付
着法で形成している。 A glass substrate is used as the substrate 6, and an LB film conductor 5 (in this example, a copper phthalocyanine LB film) is formed on the surface of the substrate 6. Formation of LB film is
It is formed using a vertical pulling deposition method known as the LB film formation method.
LB膜導電体５の上に、さらにLB膜絶縁膜７が
形成される。この形成も垂直引き上げ付着法によ
り行なわれ、イミドLB膜をLB膜導電体５の一部
が露出すように引き上げ法にて形成し、ポリイミ
ドLB膜として成膜する。 An LB film insulating film 7 is further formed on the LB film conductor 5. This formation is also performed by the vertical pulling deposition method, and the imide LB film is formed by the pulling method so that a part of the LB film conductor 5 is exposed, thereby forming a polyimide LB film.
同様にして、LB膜絶縁膜７上に前記したLB膜
導電体５と同じ材質のLB膜導電体５′が形成され
る。 Similarly, an LB film conductor 5' made of the same material as the LB film conductor 5 described above is formed on the LB film insulating film 7.
その後、エポキシ系樹脂のモールド材３，３′
で所定箇所を被覆し、露出しているLB膜導電体
５，５′に、リード電極を導電接着剤にて固定す
ることによりコンデンサを作製している。 After that, epoxy resin molding material 3, 3'
A capacitor is fabricated by covering a predetermined portion with LB film conductor 5, 5' and fixing a lead electrode to the exposed LB film conductor 5, 5' with a conductive adhesive.
この例では、LB膜絶縁膜７は、１層５Åのポ
リイミド膜を20層成膜したものを使用し、約100
Åの厚さで、従来のコンデンサの絶縁膜に対し1/
１００以下の厚さとなつている。LB膜導電体５，
５′も20層ほど積層して形成しており、両者間に
電圧を印加し容量と耐電圧を測定したところ、ほ
ぼ1μFの容量と、20Vの耐圧であつた。基板の大
きさは、３×５cmであり、コンデンサの面積は基
板面積の約６割である。 In this example, the LB film insulating film 7 is made of 20 layers of polyimide films each having a thickness of 5 Å.
With a thickness of Å, it is 1/3 times thinner than the insulating film of conventional capacitors.
The thickness is less than 100. LB film conductor 5,
5' is also formed by laminating about 20 layers, and when we measured the capacitance and withstand voltage by applying a voltage between them, we found that the capacitance was approximately 1 μF and the withstand voltage was 20V. The size of the board is 3 x 5 cm, and the area of the capacitor is approximately 60% of the board area.
この例では、導電体および絶縁膜をLB膜で構
成するため、LB膜製造装置をもちいて連続的に
製造できるので、製造効率が非常によくなつた。
また、導電体、絶縁膜の厚さを薄くできるので、
大容量とすることができ、また同性能のコンデン
サとしては小型にすることができた。LB膜では
ピンホールや不純物のない膜で、なおかつ均一な
厚さの膜とするこができるので、高耐圧、高絶縁
性のコンデンサとすることも、できるようになつ
た。また、２つの導電体のうち、どちらか一方の
導電体のみにLB膜を用いることも可能である。 In this example, since the conductor and insulating film are composed of LB films, they can be manufactured continuously using an LB film manufacturing apparatus, resulting in extremely high manufacturing efficiency.
In addition, since the thickness of the conductor and insulating film can be reduced,
It was possible to have a large capacity, and it was also possible to make it smaller than a capacitor with the same performance. Since LB films can be made without pinholes or impurities and have a uniform thickness, it has become possible to create capacitors with high withstand voltage and high insulation properties. Furthermore, it is also possible to use the LB film for only one of the two conductors.
第５図は導電体を高分子導電体で構成した例
で、LB膜絶縁膜７は、高分子導電体８および高
分子導電体８′の間に設けられ、さらにそのまわ
りをモールド材３によつて被われている。 FIG. 5 shows an example in which the conductor is made of a polymer conductor, and the LB film insulating film 7 is provided between the polymer conductor 8 and the polymer conductor 8', and the surrounding area is further covered with a molding material 3. It is twisted and covered.
この例では、高分子導電体８，８′は、グラフ
アイト粉の入つたエポキシ系高分子導電体を印刷
することにより形成される。この実施例のよう
に、導電体を高分子導電体にすれば、LB膜絶縁
膜７と高分子導電体８および８′との密着性が良
くなり、機械的強度が増し、絶縁膜ギヤツプが均
一となる。 In this example, the polymer conductors 8, 8' are formed by printing an epoxy polymer conductor containing graphite powder. If a polymer conductor is used as the conductor as in this embodiment, the adhesion between the LB film insulation film 7 and the polymer conductors 8 and 8' will be improved, mechanical strength will be increased, and insulation film gaps will be reduced. It becomes uniform.
本発明は以上説明したように、絶縁膜をLB膜
にすることにより、小型、大容量、高耐圧、高絶
縁性のコンデンサとすることができる。
As explained above, in the present invention, by using the LB film as the insulating film, a capacitor that is small in size, has a large capacity, has a high breakdown voltage, and has high insulation properties can be obtained.
第１図は、コンデンサの正面図、第２図は第１
図の断面図、第３図は導電体および絶縁膜をLB
膜で構成したコンデンサの断面図、第４図は第３
図の正面図、第５図は導電体を高分子導電体で構
成したコンデンサの断面図である。
１および１′……導電体、２……ラングミユ
ア・プロジツド膜（LB膜）、３および３′……モ
ールド材、４および４′……リード線、５および
５′……LB膜導電体、６……基板、７……LB膜
絶縁膜、８および８′……高分子導電体。
Figure 1 is a front view of the capacitor, and Figure 2 is the front view of the capacitor.
Figure 3 is a cross-sectional view of the conductor and insulating film.
A cross-sectional view of a capacitor composed of membranes, Figure 4 is
The front view of the figure and FIG. 5 are cross-sectional views of a capacitor in which the conductor is made of a polymer conductor. 1 and 1'... conductor, 2... Langmiure prod film (LB film), 3 and 3'... molding material, 4 and 4'... lead wire, 5 and 5'... LB film conductor, 6...Substrate, 7...LB film insulating film, 8 and 8'...polymer conductor.
Claims (1)
られた１つ以上の絶縁膜を有するコンデンサにお
いて、前記絶縁膜としてラングミユア・プロジエ
ツト膜を用いることを特徴とするコンデンサ。 ２ 前記導電体の少なくとも１つをラングミユ
ア・プロジエツト膜で構成したことを特徴とする
特許請求の範囲第１項記載のコンデンサ。 ３ 前記導電体の少なくとも１つを高分子導電体
で構成したことを特徴とする特許請求の範囲第１
項記載のコンデンサ。[Scope of Claims] 1. A capacitor comprising two conductors and one or more insulating films provided between these conductors, characterized in that a Langmeur-Prodget film is used as the insulating film. . 2. The capacitor according to claim 1, wherein at least one of the conductors is made of a Langmeur-Project film. 3. Claim 1, characterized in that at least one of the conductors is made of a polymer conductor.
Capacitors listed in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18503084A JPS6163009A (en) | 1984-09-04 | 1984-09-04 | Condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18503084A JPS6163009A (en) | 1984-09-04 | 1984-09-04 | Condenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6163009A JPS6163009A (en) | 1986-04-01 |
| JPH0342488B2 true JPH0342488B2 (en) | 1991-06-27 |
Family
ID=16163552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18503084A Granted JPS6163009A (en) | 1984-09-04 | 1984-09-04 | Condenser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163009A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62229722A (en) * | 1986-03-31 | 1987-10-08 | ナイルス部品株式会社 | Thin film insulator structure |
| JPS62232168A (en) * | 1986-04-01 | 1987-10-12 | Kanegafuchi Chem Ind Co Ltd | Electric/electronic device including heat resisting polyimide thin film |
| JPH0831398B2 (en) * | 1988-03-25 | 1996-03-27 | 松下電器産業株式会社 | Capacitor |
-
1984
- 1984-09-04 JP JP18503084A patent/JPS6163009A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6163009A (en) | 1986-04-01 |
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