JPH0341976B2 - - Google Patents

Info

Publication number
JPH0341976B2
JPH0341976B2 JP61506153A JP50615386A JPH0341976B2 JP H0341976 B2 JPH0341976 B2 JP H0341976B2 JP 61506153 A JP61506153 A JP 61506153A JP 50615386 A JP50615386 A JP 50615386A JP H0341976 B2 JPH0341976 B2 JP H0341976B2
Authority
JP
Japan
Prior art keywords
photoresist
dye
image
layer
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61506153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63501606A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS63501606A publication Critical patent/JPS63501606A/ja
Publication of JPH0341976B2 publication Critical patent/JPH0341976B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Materials For Photolithography (AREA)
JP61506153A 1985-11-01 1986-10-10 改善されたフォトイメ−ジング方法と組成物 Granted JPS63501606A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/795,549 US4677043A (en) 1985-11-01 1985-11-01 Stepper process for VLSI circuit manufacture utilizing radiation absorbing dyestuff for registration of alignment markers and reticle
US795549 1985-11-01

Publications (2)

Publication Number Publication Date
JPS63501606A JPS63501606A (ja) 1988-06-16
JPH0341976B2 true JPH0341976B2 (OSRAM) 1991-06-25

Family

ID=25165803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61506153A Granted JPS63501606A (ja) 1985-11-01 1986-10-10 改善されたフォトイメ−ジング方法と組成物

Country Status (10)

Country Link
US (1) US4677043A (OSRAM)
EP (1) EP0245431B1 (OSRAM)
JP (1) JPS63501606A (OSRAM)
AT (1) ATE128252T1 (OSRAM)
AU (1) AU6732987A (OSRAM)
CA (1) CA1294813C (OSRAM)
DE (1) DE3650398T2 (OSRAM)
HK (1) HK107196A (OSRAM)
WO (1) WO1987002791A1 (OSRAM)
ZA (1) ZA867789B (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01169926A (ja) * 1987-12-24 1989-07-05 Toshiba Corp アライメント方法
US5250392A (en) * 1991-02-04 1993-10-05 Ocg Microelectronic Materials, Inc. Process of developing a negative-working radiation-sensitive photoresist containing cyclized rubber polymer and contrast enhancing azo dye
US5206110A (en) * 1991-02-04 1993-04-27 Ocg Microelectronic Materials, Inc. Negative-working radiation-sensitive mixtures containing cyclized rubber polymer and contrast enhancing azo dye
US5871889A (en) * 1996-06-14 1999-02-16 Taiwan Semiconductor Manufacting Company, Ltd. Method for elimination of alignment field gap
US5858854A (en) * 1996-10-16 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high contrast alignment marks
US6143663A (en) * 1998-01-22 2000-11-07 Cypress Semiconductor Corporation Employing deionized water and an abrasive surface to polish a semiconductor topography
US6200896B1 (en) 1998-01-22 2001-03-13 Cypress Semiconductor Corporation Employing an acidic liquid and an abrasive surface to polish a semiconductor topography
US6171180B1 (en) 1998-03-31 2001-01-09 Cypress Semiconductor Corporation Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface
US5972124A (en) 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material
US6232231B1 (en) 1998-08-31 2001-05-15 Cypress Semiconductor Corporation Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
US6534378B1 (en) 1998-08-31 2003-03-18 Cypress Semiconductor Corp. Method for forming an integrated circuit device
US6566249B1 (en) 1998-11-09 2003-05-20 Cypress Semiconductor Corp. Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures
US6537708B2 (en) 2001-01-31 2003-03-25 Photronics, Inc. Electrical critical dimension measurements on photomasks
US6969684B1 (en) 2001-04-30 2005-11-29 Cypress Semiconductor Corp. Method of making a planarized semiconductor structure
US6828678B1 (en) 2002-03-29 2004-12-07 Silicon Magnetic Systems Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer
NL2004297A (en) * 2009-03-20 2010-09-21 Asml Holding Nv Improving alignment target contrast in a lithographic double patterning process.
CN102636962B (zh) * 2011-12-12 2014-03-12 北京京东方光电科技有限公司 一种空间成像套刻检验方法及阵列基板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355294A (en) * 1964-12-09 1967-11-28 American Cyanamid Co Photochromic compositions containing bleaching rate accelerators
US4251622A (en) * 1973-05-25 1981-02-17 Nippon Paint Co., Ltd. Photo-sensitive composition for dry formation of image
US4345011A (en) * 1978-01-30 1982-08-17 Eastman Kodak Company Color imaging devices and color filter arrays using photo-bleachable dyes
US4332872A (en) * 1980-09-19 1982-06-01 Zingher Arthur R Optically annotatable recording film
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
JPS582018A (ja) * 1981-06-26 1983-01-07 Toshiba Corp ウエハ及び半導体装置の製造方法
US4374915A (en) * 1981-07-30 1983-02-22 Intel Corporation High contrast alignment marker for integrated circuit fabrication
IE56081B1 (en) * 1982-11-01 1991-04-10 Microsi Inc A method of producing images of enhanced contrast in photoresists
US4572886A (en) * 1983-11-03 1986-02-25 Texas Instruments Incorporated Optical method for integrated circuit bar identification
US4621042A (en) * 1985-08-16 1986-11-04 Rca Corporation Absorptive planarizing layer for optical lithography

Also Published As

Publication number Publication date
CA1294813C (en) 1992-01-28
EP0245431A1 (en) 1987-11-19
DE3650398T2 (de) 1996-03-07
AU6732987A (en) 1987-05-19
ATE128252T1 (de) 1995-10-15
DE3650398D1 (de) 1995-10-26
US4677043A (en) 1987-06-30
JPS63501606A (ja) 1988-06-16
ZA867789B (en) 1987-05-27
WO1987002791A1 (en) 1987-05-07
HK107196A (en) 1996-06-28
EP0245431A4 (en) 1991-04-03
EP0245431B1 (en) 1995-09-20

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