JPH0338851A - Inspection of glass mask - Google Patents
Inspection of glass maskInfo
- Publication number
- JPH0338851A JPH0338851A JP17478189A JP17478189A JPH0338851A JP H0338851 A JPH0338851 A JP H0338851A JP 17478189 A JP17478189 A JP 17478189A JP 17478189 A JP17478189 A JP 17478189A JP H0338851 A JPH0338851 A JP H0338851A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- photosensitizer
- mask
- inspected
- glass wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 21
- 238000007689 inspection Methods 0.000 title abstract description 8
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000428 dust Substances 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
半導体装置の製造工程、液晶パネルの製造工程等の写真
蝕刻法を用いた加工工程で使用するガラスマスクの検査
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for inspecting a glass mask used in a processing process using photolithography, such as a semiconductor device manufacturing process or a liquid crystal panel manufacturing process.
この発明は、ガラスマスクの欠陥をガラスウェハー上の
不透明な感光剤に焼き付け、i3過光を用い、ガラスウ
ェハーを検査し、その感光剤の有無による明暗の差を用
いて、結像した欠陥の有無を求め、ガラスマスクの欠陥
の有無を調べるものである。In this invention, defects in a glass mask are printed onto an opaque photosensitizer on a glass wafer, the glass wafer is inspected using i3 ultraviolet light, and the imaged defects are detected using the difference in brightness depending on the presence or absence of the photosensitizer. The presence or absence of defects is determined and the presence or absence of defects in the glass mask is investigated.
従来、ガラスウェハー上にクロムあるいはアルミニウム
等の金属膜をコートし、その上に感光剤を塗布し、ガラ
スマスクパターンを焼き付け、現像し、前記金属膜をエ
ソチング処理し、不要となった感光剤を除去し、透過光
を使用し形成された金属膜パターンによる明暗を用いて
検査していた。Conventionally, a metal film such as chromium or aluminum is coated on a glass wafer, a photosensitizer is applied on top of the coating, a glass mask pattern is baked and developed, and the metal film is ethoched, and the unnecessary photosensitizer is removed. It was removed and inspected using transmitted light and the brightness and darkness of the metal film pattern formed.
しかし従来の金属膜を用いる方法においては、ガラスウ
ェハーの作威に長時間を要すという欠点があった。また
前記感光剤に焼き付けられたパターンと同しものを正確
に金属膜のエソチング加工で作威しなければならず、加
工の難易度が非常に高いという欠点もあった。However, the conventional method using a metal film has the disadvantage that it takes a long time to prepare the glass wafer. Another disadvantage is that the same pattern as that printed on the photosensitive material must be accurately ethoched on the metal film, making the processing extremely difficult.
そこでこの発明は、従来のこの様な欠点を解決するため
、金属膜を使用しないガラスウェハを用いた検査方法を
目的としている。Therefore, in order to solve these conventional drawbacks, the present invention aims at an inspection method using a glass wafer without using a metal film.
」二記問題点を解決するために、この発明は感光剤に染
料等を混入させ、不透明化させ、あるいは不透明な感光
剤を使用し、金属膜の不透過性を感光剤のみで代用する
様にした。In order to solve the second problem, this invention mixes dye etc. into the photosensitizer to make it opaque, or uses an opaque photosensitizer, so that the impermeability of the metal film is replaced by only the photosensitizer. I made it.
以下に、この発明の詳細な説明する。被検査ガラスマス
クあるいはレチクルを露光装置を用いて、不透明な感光
剤が塗布されたガラスウェハに焼き付け、現像処理を行
う。このガラスウェハを透過型の顕微鏡を用いて検査を
行う。あるいは透過光タイブの自動のマスク検査装置を
用いて検査を行い、ガラスマスク上の欠陥ゴミ等を発見
しそれを除去し製品の不良を未然に防止する。The present invention will be explained in detail below. A glass mask or reticle to be inspected is printed onto a glass wafer coated with an opaque photosensitive agent using an exposure device, and then developed. This glass wafer is inspected using a transmission microscope. Alternatively, an inspection is performed using a transmitted light type automatic mask inspection device to discover defects such as dust on the glass mask and remove them to prevent product defects.
〔発明の効果〕
この発明は、以上説明したように感光剤に不透明なもの
を使用するという簡単な変更でマスク検査時間
工程の大幅な削減をすることができる。[Effects of the Invention] As explained above, the present invention can significantly reduce the mask inspection time with the simple change of using an opaque photosensitive agent.
以 上Below Up
Claims (1)
カバー(ペリクル)上の欠陥、ゴミ等を検出する方法に
おいて、 ガラスウェハー上に、不透明な感光剤を塗布し露光装置
で前記ガラスマスクパターンを前記感光剤に焼き付け、
現像を行い形成されたパターンを透過光を用いて、前記
パターン面、裏面、ペリクル面上の欠陥、ゴミ等の有無
を一括して検査することを特徴とする方法。[Claims] A method for detecting defects, dust, etc. on the patterned surface of a glass mask, its back surface, or a protective cover (pellicle), which comprises: coating a glass wafer with an opaque photosensitive agent; Burning a mask pattern onto the photosensitizer,
A method characterized in that a pattern formed by development is inspected at once for the presence or absence of defects, dust, etc. on the pattern surface, back surface, and pellicle surface using transmitted light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17478189A JPH0338851A (en) | 1989-07-05 | 1989-07-05 | Inspection of glass mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17478189A JPH0338851A (en) | 1989-07-05 | 1989-07-05 | Inspection of glass mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0338851A true JPH0338851A (en) | 1991-02-19 |
Family
ID=15984556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17478189A Pending JPH0338851A (en) | 1989-07-05 | 1989-07-05 | Inspection of glass mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0338851A (en) |
-
1989
- 1989-07-05 JP JP17478189A patent/JPH0338851A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4758094A (en) | Process and apparatus for in-situ qualification of master patterns used in patterning systems | |
TW535210B (en) | Phase shift mask and its manufacturing method | |
JP3069417B2 (en) | Inspection method of phase shift mask | |
JPH0338851A (en) | Inspection of glass mask | |
JPS6345541A (en) | Method and instrument for inspection | |
JPS5754322A (en) | Inspecting method for photomask | |
JPS63103951A (en) | Dust inspection device | |
JPH0464041A (en) | Method and apparatus for inspecting defect of pellicle | |
JPH0245910A (en) | Inspection of reticle | |
JPH0325914A (en) | Detecting method of defect of x-ray exposure mask | |
JPH03153255A (en) | Photomask and manufacture of semiconductor device | |
JPH046937B2 (en) | ||
US20040165182A1 (en) | Apparatus And Method For Inspection Of Photolithographic Mask | |
JP2970043B2 (en) | Reticle pattern inspection method | |
JPS63163464A (en) | Mask | |
JPH0337650A (en) | Defect checking device for mask reticle | |
JPS62137547A (en) | Mask inspecting device | |
JPH0325440A (en) | Flaw detecting method for photomask | |
JPS5793349A (en) | Method for exposure by projection | |
JPH03270213A (en) | Exposure process and applicable aligner and mask | |
JPH04151155A (en) | Manufacture of semiconductor device | |
JPH02127640A (en) | Reticle | |
KR20020054681A (en) | Defect inspection method of photomask | |
JPS60122946A (en) | Photomask | |
JPS62274719A (en) | Reduction stepper |