JPH0338846A - Method and apparatus for bonding - Google Patents
Method and apparatus for bondingInfo
- Publication number
- JPH0338846A JPH0338846A JP17458789A JP17458789A JPH0338846A JP H0338846 A JPH0338846 A JP H0338846A JP 17458789 A JP17458789 A JP 17458789A JP 17458789 A JP17458789 A JP 17458789A JP H0338846 A JPH0338846 A JP H0338846A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- laser
- lead
- bump
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000003825 pressing Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
- H01L2224/75263—Laser in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
- H01L2224/862—Applying energy for connecting
- H01L2224/8621—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/86214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はテープキャリア方式のボンディング方法及び装
置に関し、特に半導体素子のバンプとリードとの接合部
の加熱にレーザを用いる方法及び装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a tape carrier type bonding method and apparatus, and more particularly to a method and apparatus using a laser to heat a bonding portion between a bump and a lead of a semiconductor element.
テープキャリア方式による従来の半導体素子のボンディ
ングについて、第３図の縦断面図を用いて説明する。Conventional bonding of semiconductor elements using the tape carrier method will be explained using the vertical cross-sectional view of FIG.
テープキャリア１８の構造は、一般的にポリイミドある
いはガラスエポキシなどのテープに接着剤により銅箔を
貼り合せ、さらに銅箔をエツヂング加工し、Ｓｎなどの
めっきを施し、リード１つが形成されている。The tape carrier 18 generally has a structure in which a copper foil is bonded to a polyimide or glass epoxy tape using an adhesive, the copper foil is etched, and then plated with Sn or the like to form one lead.
また、半導体素子１６の電極上には、バリアメタル層を
蒸着した後めっきによりＡｕなとのバンプ１７が形成さ
れている。このリード１９とバンプ１７の接合を行なう
方法は、まずリードＴ９をテープキャリア１８に等間隔
に開けられたスプロケットホールを用いて所定の位置に
搬送し、さらに固定した後、半導体素子１６を固定した
ボンディングステージ２０をテープキャリア１８の下へ
移動させ、テープキャリア１８を下げてリード１つとバ
ンプ１７７の位置合せを行なう。ボンディングステージ
２０はヒーター２２を有し、ボンディング時の半導体素
子１６への熱衝撃を緩和するため、通常ホンディング温
度以下の１．５０’Ｃ前後の温度に加熱されている。次
に、ヒータ２３を有し３００〜５５０℃に加熱されたボ
ンディングツール２１を下降させ、リード■９とバンプ
１７を加熱、加圧する。リード１９がＳｎめっきでバン
プ１７がＡｕの場合は共晶合金ができ接合される。Furthermore, bumps 17 made of Au or the like are formed on the electrodes of the semiconductor element 16 by plating after depositing a barrier metal layer. The method for bonding the leads 19 and bumps 17 is to first transport the leads T9 to a predetermined position using sprocket holes formed in the tape carrier 18 at equal intervals, and after fixing them, the semiconductor element 16 is fixed. The bonding stage 20 is moved below the tape carrier 18, and the tape carrier 18 is lowered to align one lead and the bump 177. The bonding stage 20 has a heater 22, and is heated to a temperature of about 1.50'C, which is usually below the bonding temperature, in order to reduce thermal shock to the semiconductor element 16 during bonding. Next, the bonding tool 21, which has a heater 23 and is heated to 300 to 550 DEG C., is lowered to heat and pressurize the lead 9 and the bump 17. When the leads 19 are Sn-plated and the bumps 17 are Au, a eutectic alloy is formed and bonded.
なお、ボンディングツール２１の加熱方式は、今述べた
ようにヒータ２３を有し常時加熱されるいわゆるコンス
タントヒート方式の他に、ボンディング時のみボンディ
ングツールに電流を流し加熱するいわゆるパルスヒート
方式もあり、この場合一般的にはボンディングステージ
の加熱は行なわれず、その代リボンディングツールがら
の熱がホンティングステージに逃げるのを防ぐために、
ホンティングステージには断熱材が用いられる。As for the heating method of the bonding tool 21, in addition to the so-called constant heat method which has the heater 23 and is constantly heated as described above, there is also the so-called pulse heat method which heats the bonding tool by passing a current through it only during bonding. In this case, the bonding stage is generally not heated, and in order to prevent heat from the bonding tool from escaping to the bonding stage,
A heat insulating material is used for the hunting stage.
また、上述したギヤングボンディング方式に対し、一箇
所ごとに接合を行なう一点ボンティンク方式がある。こ
れは超音波ウェッジボンディングに似た方法でボンデイ
ンクを行なうものである。Furthermore, in contrast to the above-mentioned gigantic bonding method, there is a one-point bonding method in which bonding is performed at each location. This is a method of bonding ink similar to ultrasonic wedge bonding.
まず、キャリアテープを個片に切断し、ホンティングス
テージ上でリートとバンプの位置合せを行ない、ホンテ
ィングステージを回転させながら、ウェッジツールによ
りリードとバンプを加圧し、リードと同じ方向に超音波
振動を加え接合を行なう。First, cut the carrier tape into individual pieces, align the leat and bump on the honting stage, pressurize the leat and bump with a wedge tool while rotating the honting stage, and apply ultrasonic waves in the same direction as the lead. Bonding is performed by applying vibration.
上述した従来のポンプインク方法では、リードに接する
平面を有するボンディングツールと、半導体素子に接す
る平面を有するホンティングステージとが、一方あるい
は双方とも加熱されるため、熱によりボンディングツー
ルのリートに接する而のそりが生じたり、またはその保
持部、駆動系の変形が生じることによるツール面と半導
体素子面又はリード面間の平行度が狂い、半導体素子上
の各接合点を均一に加圧することができないという欠点
がある。加圧が弱いと接合が不十分になり接合部のはか
れが生じ、加圧が強いと半導体素子の電極が破損する問
題が生じる。したがって通常、室温において、ボンディ
ングツールとボンディングステージとの平行度を調整し
た後、ボンディング時と同じ温度に加圧し、熱による変
形が飽和した時点で再びボディングツールとボディング
ステージとの平行度の調整を行なっていた。しかしボン
デインク時の温度は３００〜５５０℃とかなりの高温で
あり、通常の測定器が使えないため、実際には、ザンブ
ルでボンディングを行ないサンプル上の各接合点のリー
ド及びバンプのつぶれ具合を見て平行度の調整を行なう
。このような作業により、十分な平行度が得られるまで
繰り返すという経験に頼った調整を行なわなければなら
なかった。In the conventional pump ink method described above, one or both of the bonding tool, which has a flat surface in contact with the lead, and the bonding stage, which has a flat surface in contact with the semiconductor element, are heated. The parallelism between the tool surface and the semiconductor element surface or lead surface may be distorted due to warpage or deformation of the holding part or drive system, making it impossible to apply pressure uniformly to each bonding point on the semiconductor element. There is a drawback. If the pressure is too weak, the bonding will be insufficient and the bonded portion will peel, while if the pressure is too strong, the electrodes of the semiconductor element will be damaged. Therefore, normally, after adjusting the parallelism between the bonding tool and the bonding stage at room temperature, the pressure is applied to the same temperature as during bonding, and when the deformation due to heat is saturated, the parallelism between the bonding tool and the bonding stage is adjusted again. I was making adjustments. However, the temperature during bonding ink is quite high at 300 to 550 degrees Celsius, and normal measuring instruments cannot be used. Therefore, we actually conduct bonding with a ZAMBLE and check the degree of collapse of the leads and bumps at each bonding point on the sample. Adjust the parallelism. Through such work, it was necessary to repeatedly make adjustments based on experience until sufficient parallelism was obtained.
一方、−点ポンディング方式においては、上述した通常
のギヤングボンディング方式での二千面の平行度の調整
という作業が必要でなく、そのため品種切り換えが容易
であるという利点があるが、超音波振動を加えて接合を
行なうため、ウェー５
ッジボンディングのようにボンディングの方向が一方向
に限定され、その為にキャリアテープ及び半導体素子を
回転させ、リードの方向と超音波振動の方向を合せなけ
ればならなかった。したがって、テープキャリアを回転
させるために、テープキャリアを個片に切断して使用す
るので、テープキャリア方式での搬送の容易性が失われ
るという欠点があった。On the other hand, the minus point bonding method does not require the work of adjusting the parallelism of 2,000 planes as in the normal gigantic bonding method mentioned above, and therefore has the advantage that it is easy to change the product type. Because bonding is performed by applying vibration, the bonding direction is limited to one direction like wedge bonding, so the carrier tape and semiconductor element must be rotated to match the direction of the leads and the direction of the ultrasonic vibration. did not become. Therefore, in order to rotate the tape carrier, the tape carrier is cut into individual pieces and used, which has the drawback that the ease of conveyance in the tape carrier method is lost.
上述した従来のボンディング方法に対し、本発明はレー
ザが透過する材料でできた治具またはレーザが通過する
穴を有する加圧治具を用いて接合個所を加圧しながら、
レーザ光により接合部を加熱してボンディングを行なう
ようにしたものである。In contrast to the conventional bonding method described above, the present invention uses a jig made of a material through which the laser can pass or a pressure jig with a hole through which the laser passes, while applying pressure to the bonding location.
Bonding is performed by heating the bonded portion with laser light.
本発明は、テープキャリアの形成されたリードと半導体
素子のバンプとを接合するテープキャリア方式のボンデ
ィング方法において、前記リードとバンプとの接合部を
加圧しながらレーザをこの接合部に照射して接合を行な
うボンディング方＝６−
法、及び前記接合部を加圧する治具がレーザを透過する
材質て楢或されるか、あるいはレーザを通過させる穴を
有する加圧治具を備えたホンディング装置である。The present invention provides a tape carrier type bonding method for bonding leads on which a tape carrier is formed and bumps of a semiconductor element. Bonding method = 6- method, and the jig for pressurizing the bonding part is made of a material that transmits the laser, or the bonding device is equipped with a press jig having a hole through which the laser passes. be.
次に、本発明について図面を参照して説明する。第１図
は本発明の第１の実施例の縦断面図である。テープキャ
リア３上に形成されたリード４と半導体素子１上に形成
されたバンプ２の位置合せを行ない、レーザが透過する
ように石英で製作した加圧治具５を降下させ、リード４
とバンプ２を押しつけ、所定の圧力を加える。次にレー
ザ発振器で発生したレーザ７を図示しない光学系を通し
、更に加圧治具５を透過させ、バンプ２上のり一ド４上
に照射する。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of a first embodiment of the invention. The leads 4 formed on the tape carrier 3 and the bumps 2 formed on the semiconductor element 1 are aligned, and the pressure jig 5 made of quartz is lowered so that the laser can pass through, and the leads 4 are aligned.
and bump 2 and apply a predetermined pressure. Next, the laser 7 generated by the laser oscillator is passed through an optical system (not shown), and further transmitted through the pressing jig 5, and irradiated onto the bump 2 and the dot 4.
また、このとき、バンプ２の下の半導体素子１の急激な
温度上昇を防ぐためにレーザの出力を弱め、照射を複数
回に分けて徐々に加熱するなどのレーザ発振器の制御を
行なう。Further, at this time, in order to prevent a rapid temperature rise of the semiconductor element 1 under the bump 2, the laser oscillator is controlled by weakening the laser output and gradually heating the semiconductor element 1 by dividing the irradiation into a plurality of times.
本実施例において、接合に必要なエネルギはレーザによ
り直接リード］４に供給される。そのため加圧治具５と
ボンデインクステージ６は加熱ぜす、熱による変形がな
いのて、その平行度の調整は容易に行なえる。In this embodiment, the energy necessary for bonding is supplied directly to the leads 4 by a laser. Therefore, since the pressing jig 5 and the bonding stage 6 are not heated or deformed by heat, their parallelism can be easily adjusted.
第２図は本発明の第２の実施例の縦断面図である。ホン
ディングステージエ２はヒータ］４を有し、ボンディン
グ時の熱衝撃を緩和するための半導体素子８を予加熱す
る。そしてまずテープキャリア上に形成されたり一ド１
１と半導体素子８上に形成されたバンプ９の位置合せを
行ない、レーザが通過する穴を有するセラミックででき
た加圧治具１３により、リード１１上の一点づつ加圧し
、加圧治具１３に開けた穴を通してレーザ光１４をり一
１〜１１上に照射し接合する。FIG. 2 is a longitudinal sectional view of a second embodiment of the invention. The bonding stage 2 has a heater 4, which preheats the semiconductor element 8 to alleviate thermal shock during bonding. Then, first the tape is formed on the tape carrier.
1 and the bumps 9 formed on the semiconductor element 8, and pressurize each point on the lead 11 one by one using a pressure jig 13 made of ceramic having a hole through which the laser passes. A laser beam 14 is irradiated onto the sills 1 to 11 through holes made in the slits 1 to 11 to bond them.
この実施例では、従来の一点ホンディング方法とは異な
り、超音波接合ではないのでホンディング方向が限定さ
れることがなく、テープキャリア１０を長尺のまま使用
できるという利点がある。Unlike the conventional one-point bonding method, this embodiment has the advantage that since ultrasonic bonding is not used, the bonding direction is not limited, and the tape carrier 10 can be used as it is long.
以上説明したように本発明は、テープキャリア上に形成
されたリードと半導体素子との接合を、リードを押える
治具を通してレーザをリードの接合箇所に照射すること
により行なうので、従来のギヤングボンディングのよう
に、接合箇所に熱を伝えるために平行度を調整する必要
のあるボンディングツールまたはボンディングステージ
を加熱するということを行なわなくて済むため、平行度
の補正を行なう必要がなくなるという効果がある。As explained above, according to the present invention, the leads formed on the tape carrier and the semiconductor element are bonded by irradiating a laser beam onto the joint part of the leads through a jig that presses the leads. As shown in the figure, there is no need to heat the bonding tool or bonding stage, which requires parallelism adjustment in order to transfer heat to the joint, so there is no need to correct parallelism. .
一方、−点ボンディングにおいては、超音波振動を加振
する代わりにレーザにより加熱し接合するので、ホンデ
ィング方向が限定されなくなり、テープを回転させる必
要がない為、長尺テープが使用できるようになるという
効果がある。On the other hand, in -point bonding, the bonding is performed by heating with a laser instead of applying ultrasonic vibrations, so the bonding direction is no longer limited, and there is no need to rotate the tape, so long tapes can be used. It has the effect of becoming.
第１図は本発明の第１の実施例の断面図、第２図は第２
の実施例の縦断面図、第３図は従来のボンディング方法
及び装置を説明する縦断面図である。
＝９
１・・・半導体素子、２・・・バンプ、３・・テープキ
ャリア、４・・・リード、５・・加圧治具、６・・・ポ
ンティングステージ、７・・・レーザ、８・半導体素子
、９・バンプ、１０・・・テープキャリア、１１・・り
一ト、１２・・・ボンディングステージ、１３・・・加
圧治具、１４・・・レーザ、１５・・ヒータ、１６・・
・半導体素子、１７・・バンプ、１８・・テープキャリ
ア、１９・・リード、２０・・・ボンディングステージ
、２１・・・ボンディングツール、２２・・・ヒータ、
２３・・・ヒータ。FIG. 1 is a sectional view of a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of a second embodiment of the present invention.
FIG. 3 is a longitudinal sectional view illustrating a conventional bonding method and apparatus. =9 1... Semiconductor element, 2... Bump, 3... Tape carrier, 4... Lead, 5... Pressure jig, 6... Ponting stage, 7... Laser, 8 - Semiconductor element, 9. Bump, 10... Tape carrier, 11... Reset, 12... Bonding stage, 13... Pressure jig, 14... Laser, 15... Heater, 16・・・
- Semiconductor element, 17... Bump, 18... Tape carrier, 19... Lead, 20... Bonding stage, 21... Bonding tool, 22... Heater,
23... Heater.
Claims (2)
のバンプとを接合するボンディング方法において、前記
リードとバンプとの接合部を加圧しながらこの接合部に
レーザを照射して接合を行なうことを特徴とするボンデ
ィング方法。(1) A bonding method for bonding a lead formed on a tape carrier to a bump on a semiconductor element, characterized in that the bonding is performed by irradiating a laser beam onto the bonded portion of the lead and bump while applying pressure to the bonded portion. bonding method.
過させる手段を備えた請求項（１）記載のボンディング
装置。(2) The bonding apparatus according to claim (1), wherein the jig for pressurizing the bonding portion includes means for transmitting or passing laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17458789A JPH0338846A (en) | 1989-07-05 | 1989-07-05 | Method and apparatus for bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17458789A JPH0338846A (en) | 1989-07-05 | 1989-07-05 | Method and apparatus for bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0338846A true JPH0338846A (en) | 1991-02-19 |
Family
ID=15981169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17458789A Pending JPH0338846A (en) | 1989-07-05 | 1989-07-05 | Method and apparatus for bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0338846A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04352440A (en) * | 1991-05-30 | 1992-12-07 | Matsushita Electric Ind Co Ltd | Joining method for inner lead |
-
1989
- 1989-07-05 JP JP17458789A patent/JPH0338846A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04352440A (en) * | 1991-05-30 | 1992-12-07 | Matsushita Electric Ind Co Ltd | Joining method for inner lead |
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