JPH0338832Y2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a self-extinguishing semiconductor device, particularly to a gate lead lead-out structure thereof.

So-called self-extinguishing semiconductor devices that can be turned on and off by a gate signal, such as GTO (gate turn-off thyristors), flow a large pulsed current of several hundred amperes for a short time (less than 10 μS) when turned off. This requires a strong gate electrode structure.

Conventionally, several aluminum (Al) wires 2 are ultrasonically bonded to the gate electrode area of the GTO element body 1, which has a disc-shaped outer shape, as shown in FIGS. 1a and 1b.
After dividing these into three directions and fixing them by crimping them at three places on a brass ring 3 which is one size larger than the element body 1, form them into a ring shape as shown in Fig. 2a and b, and attach a ring shape to one end surface. The ring 3 is attached to the groove 4a of the fixing member 4 made of Teflon, which has a groove 4a for drawing out the Al wire, a notch 4b for pulling out the Al wire, and a step 4c for housing the element body 1 on the inner edge of the other end surface.
Furthermore, the element main body 1 is mounted so as to be housed in the stepped portion 4c, and is housed in the case in this state. In this case, the gate lead terminal protruding outside the case is connected to the brass ring 3 by soldering.

However, in such a structure, the Al wire 2 is crimped and fixed with hard brass (a certain amount of hard metal is required for crimping, and an Al ring cannot be used). Wire 2 becomes weak or breaks. In addition, since there is a soldering process, not only does assembly require skill, but also requires removal of flux, which requires a large number of steps and is time-consuming.

The present invention was developed to eliminate the above-mentioned drawbacks. A ring-shaped connecting member, which is one size larger than the element body, is arranged concentrically with the element body, and an Al wire is connected between the gate electrode area and the connecting member. On the other hand, a ring-shaped case side connection part is formed on the bottom inner surface of the case body, and the element body is housed in the case so that the connection member is electrically connected to this, making assembly easy. An object of the present invention is to provide a semiconductor element having a gate lead structure with high strength and high strength.

Hereinafter, the present invention will be explained in detail based on illustrated embodiments.

FIGS. 3 and 4 show an embodiment of the present invention, and 11 is an element body having a disk-shaped outer shape, with an anode electrode region formed on one surface and a cathode and gate electrode region formed on the other surface. , 12 is a disk-shaped anode electrode member with the same diameter as the element body 11, 13 is a disk-shaped cathode electrode member with a smaller diameter than the element body 11, and 14 is a case body, which is made of an insulating material such as ceramic and has a short length. The bottom is formed into a cylindrical shape, and the element body 11 and the anode electrode member 12 are housed in the bottom.
A through hole 14a for holding is provided. This hole 14
The anode electrode member 12 is attached so that a portion of the anode electrode member 12 is inserted into the hole a, and the anode electrode member 12 is airtightly fixed thereto. The illustrated upper surface of the anode electrode member 12 becomes the mounting surface of the element body 11, and its position is selected so that the upper surface of the element body 11 slightly protrudes from the bottom inner surface of the case body 14 when the element body 11 is stored. Further, the case body 14 has a flange 14b attached to its open end, and a ring-shaped case-side connecting portion 15 is arranged on the inner surface of the bottom portion and is fixed by welding or the like. When the case body 14 is made of ceramic, this case-side connection part 15 is usually made of Kovar to prevent it from cracking, but it is easy to connect with a gate lead terminal 16 (described later) and has a high electrical resistance. It's fine as long as it doesn't exist. Reference numeral 16 denotes a gate lead terminal, which passes through the side wall of the case body 14 and has one end (inside) connected to the case side connection part 15. This terminal 16 is generally formed of Kovar.

Reference numeral 17 denotes an upper lid, which passes through the cathode electrode member 13 in the center thereof and is airtightly fixed thereto. Also,
A flange 14b on the case main body 14 side is attached to the peripheral edge.
A flange 17a is attached to connect with the flange 17a. The diameter of the upper lid 17 is approximately the same as the inner diameter of the case body 14.

On the other hand, 18 is a ring-shaped connecting member that is one size larger than the element main body 11, and is made of aluminum, etc.
It is made of a material that is not easily attacked by acid when the bonding surface is pickled, is arranged concentrically with the element body 11, and is connected to the gate region of the element body 11 by a plurality of wires, for example, Al wires 19. ing. This connection is made by ultrasonic bonding or spot welding. In this case, if the element main body 11 and the connecting member 18 are placed in a positional relationship such that their upper surfaces are flush with each other, the pressure applied during bonding can be made equal;
The process can be shortened.

In addition, 20 is the connection member 18 and the case side connection part 1
This is a pressure member made of an insulating material, such as an O-ring, used when the electrical connection of No. 5 is made by pressure contact.

As shown in FIG. 4, the semiconductor element with the above structure is divided into three groups and integrated into each group. For example, the cathode electrode member 13 is fixed to the upper lid 17, and the space between the element body 11 and the connecting member 18 is fixed. After connecting the Al wire 19 and attaching the anode electrode member 12, case side connection part 15 and gate lead terminal 16 to the case body 14, the element body 11 with the ring-shaped connection member 18 attached is attached to the case body 14. The setting is completed by placing the anode electrode member 12 on the upper surface of the main body 14, then attaching the O-ring 20 and attaching the upper cover 17.

Note that the electrical connection between the connecting member 18 and the case-side connecting portion 15 may be made by spot welding or screwing in addition to pressure welding.

As described above, according to the present invention, since the gate lead structure does not include a crimping process, there is no fear of disconnection or damage to the leads, resulting in high strength.
In addition, since the assembly process can be mechanized, no skill is required, and tasks such as removing the excess lead wire after crimping, removing metal powder generated during that removal, and removing flux after soldering are eliminated. This reduces the number of steps and makes assembly easier. Furthermore, costs can be reduced by omitting expensive Teflon parts and shortening working time.

[Brief explanation of the drawing]

Figures 1a and b are plan views and side views showing the state of connection between the element body and gate lead ring of a conventional semiconductor element, and Figures 2a and b are plane views showing the assembled state of the semiconductor element body and ring. FIG. 3 is a cross-sectional view showing one embodiment of a semiconductor device according to the present invention, and FIG. 4 is a cross-sectional view showing the device of the same embodiment broken down into various parts. DESCRIPTION OF SYMBOLS 11...Element body, 12...Anode electrode member, 13...Cathode electrode member, 14...Case body, 15...Case side connection part, 16...Gate lead terminal, 17...Top lid, 18...Connection Element,
19...Al wire, 20...O ring.

Claims (1)

[Scope of utility model registration request] The main body of the self-arc-extinguishing semiconductor element has an anode electrode area formed on one side and a cathode and gate electrode area on the other side, an anode electrode member is fixed to the bottom of the case body made of an insulating material, and a cathode electrode member is fixed to the upper cover. A ring formed to have an inner diameter larger than an outer diameter of the element body, in a semiconductor element which is housed in an airtight case so as to be sandwiched between the anode and cathode electrode members, and a gate lead terminal is drawn out from the side of the case. A shaped connecting member and an element body are arranged concentrically, and a wire is used to connect between the connecting member and the gate electrode area of the element body, while a ring-shaped case side connecting part is formed on the bottom inner surface of the case body. , characterized in that the gate lead terminal connected to this connection part is made to protrude outside the case side wall, and the element body is housed and held so that the ring-shaped connection member is electrically connected to the case side connection part. semiconductor elements.