JPH0338053A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH0338053A JPH0338053A JP17185789A JP17185789A JPH0338053A JP H0338053 A JPH0338053 A JP H0338053A JP 17185789 A JP17185789 A JP 17185789A JP 17185789 A JP17185789 A JP 17185789A JP H0338053 A JPH0338053 A JP H0338053A
- Authority
- JP
- Japan
- Prior art keywords
- package case
- recess
- semiconductor device
- lead
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims abstract description 22
- 238000000465 moulding Methods 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 6
- 230000017525 heat dissipation Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＩＣ，ＬＳ１．光電素子、水晶振動子等を搭
載した半導体装置に関し、特に半導体装置のパッケージ
構造及びパッケージ方法の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is applicable to IC, LS1. The present invention relates to semiconductor devices equipped with photoelectric elements, crystal resonators, etc., and particularly relates to improvements in package structures and packaging methods for semiconductor devices.
（従来の技術）
従来の半導体装置は、例えば第４図に示すように、セラ
ミクス製の基板１の上にアイランド２及びインナーリー
ド３を載せ、さらにその上にセラミクス製のリング４を
載せ、これらを低融点ガラス５にて接着することにより
一体化させて構成されている。(Prior Art) In a conventional semiconductor device, for example, as shown in FIG. 4, an island 2 and an inner lead 3 are placed on a ceramic substrate 1, and a ceramic ring 4 is placed on top of the island 2 and an inner lead 3. are integrated by bonding them with low melting point glass 5.
（発明が解決しようとする課題）
上記のような従来の半導体装置においては、セラミクス
製の基板１やリング４が比較的高価であり、これが製品
価格の比較的太きウェイトを占めている。また、これら
セラミクス製の部品は切削、研磨等の加工を経てきてい
るため、粉塵が付着していることがあり、これが半導体
の電気的特性に悪影響を及ぼすことがあるという問題点
がある。(Problems to be Solved by the Invention) In the conventional semiconductor device as described above, the ceramic substrate 1 and ring 4 are relatively expensive and account for a relatively large portion of the product price. Further, since these ceramic parts have undergone processing such as cutting and polishing, dust may adhere thereto, which poses a problem in that this may adversely affect the electrical characteristics of the semiconductor.
さらに、従来の半導体装置は、半導体素子をパッケージ
の内部に封入しているため、半導体素子から生じる熱を
外に逃しにくいという問題点がある。Further, in conventional semiconductor devices, since the semiconductor element is sealed inside the package, there is a problem in that it is difficult for heat generated from the semiconductor element to escape to the outside.
従って１本発明は、セラミクス製の部品の使用を廃除し
、信頼性が高く低価格で、しかも放熱作用の良好な半導
体装置及びその製造方法を提供することを課題としてい
る。Accordingly, one object of the present invention is to provide a semiconductor device that eliminates the use of ceramic parts, is highly reliable, is inexpensive, and has good heat dissipation, and a method for manufacturing the same.
（８題を解決するための手段）
本発明においては、半導体素子Ｃを収容する凹所１３ａ
と、この凹所１３ａを囲む稜部１３ｂとを有するパッケ
ージケース１３を粉末ガラスの溶融成型体で構成し、こ
のパッケージケース１３の凹所１３ａを上下に貫通して
、その上下の表面がパッケージケース１３から露出する
ように放熱板１５を封着すると共に、稜部１３ｂを貫通
してケース１３の内外に導電性のリード１２を延ばし。(Means for Solving Eight Problems) In the present invention, the recess 13a for accommodating the semiconductor element C
and a ridge 13b surrounding this recess 13a, the package case 13 is made of a molten molded powder glass, and passes vertically through the recess 13a of this package case 13, so that the upper and lower surfaces thereof form the package case. The heat sink 15 is sealed so as to be exposed from the case 13, and the conductive leads 12 are extended inside and outside the case 13 by penetrating the ridge 13b.
このリード１２の一端側１２ａは、パッケージケース１
３の凹所１３ａの表面から上面を露出させて半導体素子
Ｃに接続できるようにし、他端側１２ｂはパッケージケ
ース１３の外側へ延出させて半導体装置を構成した。One end side 12a of this lead 12 is connected to the package case 1.
The upper surface of the recess 13a of No. 3 was exposed from the surface so that it could be connected to the semiconductor element C, and the other end side 12b was extended to the outside of the package case 13 to form a semiconductor device.
（作 用）
本発明の半導体装置においては、比較的高価で、しかも
粉層が付着する可能性の高いセラミクス製部品を用いる
ことなく、粉末ガラスの溶融成型体のみによってパッケ
ージケース１３を構成し、これによってリード１２支持
したので、製品コストが低減され、しかも製品の信頼性
は、セラミクス製部品を用いるものと同等あるいはそれ
以上のものとなる。また、半導体素子が搭載されるパッ
ケージケース１３の凹所１３ａを貫通して設けられた放
熱＠１５により半導体素子から生じる熱を外部に放散し
て冷却効果を高める。(Function) In the semiconductor device of the present invention, the package case 13 is constructed only from a molten molded body of powdered glass, without using ceramic parts that are relatively expensive and highly likely to have a powder layer attached. Since the lead 12 is supported in this way, the product cost is reduced, and the reliability of the product is equal to or higher than that using ceramic parts. Further, the heat generated from the semiconductor element is radiated to the outside by the heat radiation @15 provided through the recess 13a of the package case 13 in which the semiconductor element is mounted, thereby increasing the cooling effect.
（実施例）
本発明の実施例を第１図乃至第３図に示す。第１図は本
発明にかかる半導体装置の斜視図、第２図は本発明にか
かる半導体装置の断面図、第３図は本発明にかかる半導
体装置の製造過程を示す断面図である。(Example) Examples of the present invention are shown in FIGS. 1 to 3. FIG. 1 is a perspective view of a semiconductor device according to the present invention, FIG. 2 is a cross-sectional view of the semiconductor device according to the present invention, and FIG. 3 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the present invention.
第１図、第２図において、１１は導電性のアイランド、
１２は同じく導電性のリード、１３はアイランド１１及
びリード１２を封止するパッケージケースである。In FIGS. 1 and 2, 11 is a conductive island;
12 is a conductive lead, and 13 is a package case for sealing the island 11 and the lead 12.
パッケージケース１３は、粉末ガラスの溶融成型体から
成り、ＩＣチップ、光電素子、水晶振動子等の半導体素
子Ｃを収容するための凹所１３ａを中央部に有すると共
に、この凹所１３ａを囲む稜部１３ｂを備えている。そ
して、この凹所１３ａを上下に貫通するように放熱板１
５が設けられている。The package case 13 is made of a molten molded body of powdered glass, and has a recess 13a in the center for accommodating a semiconductor element C such as an IC chip, a photoelectric element, or a crystal resonator, and a ridge surrounding the recess 13a. A portion 13b is provided. Then, the heat sink 1 is inserted so as to vertically penetrate this recess 13a.
5 is provided.
リード１２は、パッケージケース１３の稜部１３ｂを貫
通してケース１３の内外に延びている。The lead 12 penetrates the ridge 13b of the package case 13 and extends in and out of the case 13.
パッケージケース１３の凹所１３ａ内に位置するインナ
ーリード１２ａは、半導体素子Ｃに接続できるように、
凹所１３ａの表面から上面を露出させている。また、リ
ード１２の他端側のアウターリード１２ｂはパッケージ
ケース１３の外側へ延出している。The inner lead 12a located in the recess 13a of the package case 13 is connected to the semiconductor element C.
The upper surface is exposed from the surface of the recess 13a. Further, the outer lead 12b on the other end side of the lead 12 extends to the outside of the package case 13.
放熱板１５は、比較的熱伝導性のよい金属、セラミクス
等の素材から成り、パッケージケース１３の凹所１３ａ
を上下に貫通し、上下の表面がパッケージケース１３か
ら露出しており、その上面にアイランド１１が接着され
ている。The heat sink 15 is made of a material with relatively good thermal conductivity, such as metal or ceramics, and is located in the recess 13a of the package case 13.
The upper and lower surfaces thereof are exposed from the package case 13, and the island 11 is bonded to the upper surface thereof.
第２図に示すように、パッケージケース１３の凹所１３
ａ内において、アイランド１１の上面に半導体素子Ｃが
搭載され、ワイヤ１４によりインナーリード１２ａと接
続される。As shown in FIG. 2, the recess 13 of the package case 13
In a, a semiconductor element C is mounted on the upper surface of the island 11 and connected to the inner lead 12a by a wire 14.
この半導体装置の製造方法を第３図に示す。第３図Ａに
示すように、リード１２を位置決めして上下のリング２
１．２２の間に保持し、かつその先端を下型２３の段部
２３ａ上に載せて支持する。A method for manufacturing this semiconductor device is shown in FIG. As shown in FIG. 3A, position the lead 12 and insert the upper and lower rings 2.
1.22, and its tip is placed on the stepped portion 23a of the lower die 23 for support.
下型２３の突部２３ｂ上には、ガラス素材２５を載せ、
さらにその上に放熱板１５を載せて、下型２３と上型２
４との間で加圧しながら加熱する。A glass material 25 is placed on the protrusion 23b of the lower mold 23,
Furthermore, the heat sink 15 is placed on top of the lower mold 23 and the upper mold 2.
4. Heat while applying pressure.
ガラス素材２５は、粉末ガラスを仮焼成した板状のもの
である。加熱によりガラス素材２５は熔融し、リード５
．５１’ｆｊｌから下型２３の凹所２３ｃにまで流入し
、また放熱板１５がガラス素材２５を貫通して、結局筒
３同Ｂに示すように、パッケージケース１３が成型され
、同時にリード２と放熱板１５とが夫々パッケージケー
ス１３に封着される。そして、インナーリード１２ａの
上面及び放熱板１５の上面がパッケージケース１３の凹
所１３ａ内で露出し、また放熱板１５の下面がパッケー
ジケース１３の下面に露出する（第３図に示す型内では
上下が転倒している。）。The glass material 25 is a plate-shaped material obtained by pre-sintering powdered glass. The glass material 25 is melted by heating, and the lead 5
．． 51'fjl to the recess 23c of the lower mold 23, and the heat sink 15 passes through the glass material 25, and eventually the package case 13 is molded as shown in the cylinder 3B, and at the same time the leads 2 and Heat sinks 15 are each sealed to the package case 13. The upper surface of the inner lead 12a and the upper surface of the heat sink 15 are exposed within the recess 13a of the package case 13, and the lower surface of the heat sink 15 is exposed on the lower surface of the package case 13 (in the mold shown in FIG. 3). (The top and bottom are upside down.)
第２図に示すように、アイランド１１は必要に応じて放
熱板の上面に低融点ガラスによって接着される。パッケ
ージケース１３の稜部１３ｂの上面には、鉄、コバール
等の金属リング１６が熱処理によって一体的に取付けら
れ、その上面にカバー１７が取付けられる。カバー１７
は、これを金ＦＡ製にしてリング１６に溶着し、あるい
は低融点ガラスによって接着する。低融点ガラスによっ
て接着する場合には、カバー１７は金！Ｒ製に限らない
。カバー１７を直接、稜部１３ｂの上面に接着すること
もできる。As shown in FIG. 2, the island 11 is bonded to the upper surface of the heat sink using low-melting glass, if necessary. A metal ring 16 made of iron, Kovar, etc. is integrally attached to the upper surface of the ridge 13b of the package case 13 by heat treatment, and a cover 17 is attached to the upper surface. cover 17
This is made of gold FA and is welded to the ring 16 or bonded with low melting point glass. When bonding with low melting point glass, the cover 17 is made of gold! Not limited to those made by R. The cover 17 can also be directly adhered to the upper surface of the ridge portion 13b.
なお、アイランド１１は、不要であれば省略することが
でき、また後で放熱板１５上に低融点ガラスによって接
着してもよい、アイランド１１の封着をパッケージケー
ス１３の成型と同時に行うこともできる。Note that the island 11 can be omitted if unnecessary, and may be bonded later on the heat sink 15 with low melting point glass.The island 11 can also be sealed at the same time as the package case 13 is molded. can.
第３図Ｃに示す実施例では、ガラス素材２５をリング状
に形成し、その孔２５ａの中に放熱板１５を挿入して、
型２３．２４の間に配置する方法を採用した。In the embodiment shown in FIG. 3C, the glass material 25 is formed into a ring shape, and the heat sink 15 is inserted into the hole 25a.
A method of placing it between molds 23 and 24 was adopted.
なお、ガラス素材２５の成型方法は図示の実施例に限定
されるものではなく、他にも各種の異なる方法を採用す
ることができる。Note that the method for molding the glass material 25 is not limited to the illustrated embodiment, and various other methods may be employed.
（発明の効果）
以上のように、本発明においては、半導体素子Ｃを収容
する凹所１３ａと、この凹所１３ａを囲む稜部１３ｂと
を有するパッケージケース１３を粉末ガラスの溶融成型
体で構威し、このパッケージケース１３の凹所１３ａを
上下に貫通して、その上下の表面がパッケージケース１
３から露出するように放熱板１５を封着すると井に、稜
部１３ｂを貫通してケース１３の内外に導電性のリード
１２を延ばし、このリード１２の一端側１２ａは。(Effects of the Invention) As described above, in the present invention, the package case 13 having the recess 13a for accommodating the semiconductor element C and the ridge portion 13b surrounding the recess 13a is made of a melt-molded body of powdered glass. The recess 13a of the package case 13 is penetrated vertically, and the upper and lower surfaces thereof are connected to the package case 1.
When the heat dissipation plate 15 is sealed so as to be exposed from the ridge 13b, the conductive lead 12 is extended in and out of the case 13 through the ridge 13b, and one end 12a of the lead 12 is extended.
パッケージケース１３の凹所１３ａの表面から上面をｆ
ａ出させて半導体素子Ｃに接続できるようにし、他端側
１２ｂはパッケージケース１３の外側へ延出させて半導
体装置を構成したため、セラミクス製の部品を用いず、
しかも製造過程において粉末ガラスを溶融させた上凝固
させるので、粉塵の付着を大幅に減少させ、半導体装置
の品質を向上させることができ、しかも低価格の半導体
装置を提イ」（することができる、また、半導体素子Ｃ
は、放熱板１５の上に搭載されることになるので、半導
体素子Ｃから生じる熱を効率的に外部に放散させて冷却
効果を高めることができる。The upper surface from the surface of the recess 13a of the package case 13 is
Since the semiconductor device was constructed by allowing the other end side 12b to extend outside the package case 13 and connect it to the semiconductor element C, no ceramic parts were used.
Moreover, since the powdered glass is melted and then solidified during the manufacturing process, it is possible to significantly reduce dust adhesion, improve the quality of semiconductor devices, and provide low-cost semiconductor devices. , and the semiconductor element C
Since it is mounted on the heat sink 15, the heat generated from the semiconductor element C can be efficiently dissipated to the outside and the cooling effect can be enhanced.
第１図乃至第３図は本発明の実施例を示すもので、第１
図は本発明にかかる半導体装置の斜視図。
第２図は本発明にかかる半導体装置の断面図、第３図Ａ
、Ｂは本発明にかかる半導体装置の１１１２ｍ過程を示
す断面図であり、第４図は従来の半導体装置の断面図で
ある。
１２・・・リード、１２ａ・・・インナーリード、１２
ｂ・・・アウターリード、１３・・・パッケージケース
、１３ａ・・・凹所、１３ｂ・・・稜部、１４・・・ワ
イヤ、１５・・・放熱板、１６・・・金属製リング、１
７・・・カバー ２３・・・上型、２４・・・下型、２
５・・・ガラス素材、Ｃ・・・半導体素子。1 to 3 show embodiments of the present invention.
The figure is a perspective view of a semiconductor device according to the present invention. FIG. 2 is a cross-sectional view of a semiconductor device according to the present invention, and FIG. 3A
, B are cross-sectional views showing the 1112m process of the semiconductor device according to the present invention, and FIG. 4 is a cross-sectional view of the conventional semiconductor device. 12...Lead, 12a...Inner lead, 12
b... Outer lead, 13... Package case, 13a... Recess, 13b... Edge, 14... Wire, 15... Heat sink, 16... Metal ring, 1
7...Cover 23...Upper mold, 24...Lower mold, 2
5...Glass material, C...Semiconductor element.
Claims (2)
部とを有する粉末ガラスの溶融成型体から成るパッケー
ジケースと、 このパッケージケースの凹所を上下に貫通して上下の表
面がパッケージケースから露出した放熱板と、 前記パッケージケースの稜部を貫通してパッケージケー
スの内外に延びる導電性のリードとを具備し、 このリードは、一端側が前記パッケージケースの凹所内
にあって、半導体素子に接続するために凹所の表面から
上面を露出させていることを特徴とする半導体装置。(1) A package case made of a melt-molded powder glass body having a recess for accommodating a semiconductor element and a ridge surrounding the recess; A heat dissipation plate exposed from the package case, and a conductive lead extending in and out of the package case by penetrating the ridge of the package case, one end of the lead being within the recess of the package case, A semiconductor device characterized in that the upper surface is exposed from the surface of the recess for connection to a semiconductor element.
て所定位置に配置すると共に、前記放熱板を成型空間内
の所定位置に配置し、かつ成型空間内に、粉末がラスを
仮焼成して成る板材を封入し、成型空間内で前記板材を
加熱熔融させることにより、ガラス製のパッケージケー
スを所定形状に加圧成型すると同時に、リード及び放熱
板をパッケージケースに封着することを特徴とする請求
項（１）に記載の半導体装置の製造方法。(2) Protruding the tip of the lead into the molding space in the mold and arranging it at a predetermined position, and arranging the heat dissipation plate at a predetermined position in the molding space, and the powder forming a lath in the molding space. By enclosing a fired plate material and heating and melting the plate material in a molding space, a glass package case is pressure-molded into a predetermined shape, and at the same time, leads and a heat sink are sealed to the package case. A method for manufacturing a semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17185789A JPH0338053A (en) | 1989-07-05 | 1989-07-05 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17185789A JPH0338053A (en) | 1989-07-05 | 1989-07-05 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0338053A true JPH0338053A (en) | 1991-02-19 |
Family
ID=15931071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17185789A Pending JPH0338053A (en) | 1989-07-05 | 1989-07-05 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0338053A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053261A (en) * | 2005-08-18 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Package for electronic component and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828830A (en) * | 1971-08-16 | 1973-04-17 | ||
| JPS53108113A (en) * | 1977-03-04 | 1978-09-20 | Hitachi Ltd | Method of forming concave on glass body |
| JPS5929536A (en) * | 1982-08-06 | 1984-02-16 | Honda Motor Co Ltd | Rear warning system for running vehicle |
| JPS60167358A (en) * | 1984-02-09 | 1985-08-30 | Sumitomo Electric Ind Ltd | Circuit board for loading semiconductor element |
-
1989
- 1989-07-05 JP JP17185789A patent/JPH0338053A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828830A (en) * | 1971-08-16 | 1973-04-17 | ||
| JPS53108113A (en) * | 1977-03-04 | 1978-09-20 | Hitachi Ltd | Method of forming concave on glass body |
| JPS5929536A (en) * | 1982-08-06 | 1984-02-16 | Honda Motor Co Ltd | Rear warning system for running vehicle |
| JPS60167358A (en) * | 1984-02-09 | 1985-08-30 | Sumitomo Electric Ind Ltd | Circuit board for loading semiconductor element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053261A (en) * | 2005-08-18 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Package for electronic component and its manufacturing method |
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