JPH0334848B2 - - Google Patents

Info

Publication number
JPH0334848B2
JPH0334848B2 JP60269713A JP26971385A JPH0334848B2 JP H0334848 B2 JPH0334848 B2 JP H0334848B2 JP 60269713 A JP60269713 A JP 60269713A JP 26971385 A JP26971385 A JP 26971385A JP H0334848 B2 JPH0334848 B2 JP H0334848B2
Authority
JP
Japan
Prior art keywords
solution
substrate
layer
growth
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60269713A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62128522A (ja
Inventor
Yoichi Sasai
Mototsugu Ogura
Masato Ishino
Minoru Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP26971385A priority Critical patent/JPS62128522A/ja
Publication of JPS62128522A publication Critical patent/JPS62128522A/ja
Publication of JPH0334848B2 publication Critical patent/JPH0334848B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP26971385A 1985-11-29 1985-11-29 液相成長方法 Granted JPS62128522A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26971385A JPS62128522A (ja) 1985-11-29 1985-11-29 液相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26971385A JPS62128522A (ja) 1985-11-29 1985-11-29 液相成長方法

Publications (2)

Publication Number Publication Date
JPS62128522A JPS62128522A (ja) 1987-06-10
JPH0334848B2 true JPH0334848B2 (fi) 1991-05-24

Family

ID=17476134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26971385A Granted JPS62128522A (ja) 1985-11-29 1985-11-29 液相成長方法

Country Status (1)

Country Link
JP (1) JPS62128522A (fi)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186614A (ja) * 1988-01-14 1989-07-26 Matsushita Electric Ind Co Ltd 液相エピタキシャル成長方法
JPH02253613A (ja) * 1989-03-28 1990-10-12 Univ Nagoya 半導体多層薄膜の作成方法
JPH04137779A (ja) * 1990-09-28 1992-05-12 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911276A (fi) * 1972-05-29 1974-01-31
JPS52106673A (en) * 1976-03-04 1977-09-07 Matsushita Electric Ind Co Ltd Crystal growing method and device thereof
JPS5384457A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth method
JPS54115062A (en) * 1978-02-28 1979-09-07 Mitsubishi Electric Corp Liquid phase epitaxial growth unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911276A (fi) * 1972-05-29 1974-01-31
JPS52106673A (en) * 1976-03-04 1977-09-07 Matsushita Electric Ind Co Ltd Crystal growing method and device thereof
JPS5384457A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth method
JPS54115062A (en) * 1978-02-28 1979-09-07 Mitsubishi Electric Corp Liquid phase epitaxial growth unit

Also Published As

Publication number Publication date
JPS62128522A (ja) 1987-06-10

Similar Documents

Publication Publication Date Title
US7351993B2 (en) Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US4829022A (en) Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US7199015B2 (en) Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US7273657B2 (en) Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US7709826B2 (en) Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon
US7645517B2 (en) Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
JP2000286449A (ja) Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US4050964A (en) Growing smooth epitaxial layers on misoriented substrates
JPS59129486A (ja) 半導体レーザ装置の製造方法
US5270246A (en) Manufacturing method of semiconductor multi-layer film and semiconductor laser
JPH0677580A (ja) オプトエレクトロニクス部品用の半導体構造
JPH0334848B2 (fi)
US4470368A (en) LPE Apparatus with improved thermal geometry
RU2328065C2 (ru) Способ изготовления полупроводникового устройства в полупроводниковой структуре и устройство, изготовленное этим способом
JP2674474B2 (ja) 歪量子井戸半導体レーザの気相成長方法
JP2000012467A (ja) ＧａＡｓ層の形成方法
Fujikura et al. Fabrication of InGaAs wires by preferential molecular beam epitaxy growth on corrugated InP substrate
JPS63119227A (ja) 液相成長方法
JPS63256599A (ja) ＧａＡｌＡｓエピタキシヤルウエハ及びその製造方法
JPH0526760B2 (fi)
Chu et al. Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain‐coupled distributed feedback lasers
JPS6053011A (ja) 半導体積層構造の製造方法
JPS635516A (ja) 液相成長方法
JPH04254321A (ja) 液相エピタキシャル成長方法
JPS63136515A (ja) 液相エピタキシヤル成長方法