JPH0334848B2 - - Google Patents
Info
- Publication number
- JPH0334848B2 JPH0334848B2 JP60269713A JP26971385A JPH0334848B2 JP H0334848 B2 JPH0334848 B2 JP H0334848B2 JP 60269713 A JP60269713 A JP 60269713A JP 26971385 A JP26971385 A JP 26971385A JP H0334848 B2 JPH0334848 B2 JP H0334848B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- layer
- growth
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 43
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000007791 liquid phase Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26971385A JPS62128522A (ja) | 1985-11-29 | 1985-11-29 | 液相成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26971385A JPS62128522A (ja) | 1985-11-29 | 1985-11-29 | 液相成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62128522A JPS62128522A (ja) | 1987-06-10 |
JPH0334848B2 true JPH0334848B2 (fi) | 1991-05-24 |
Family
ID=17476134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26971385A Granted JPS62128522A (ja) | 1985-11-29 | 1985-11-29 | 液相成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62128522A (fi) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01186614A (ja) * | 1988-01-14 | 1989-07-26 | Matsushita Electric Ind Co Ltd | 液相エピタキシャル成長方法 |
JPH02253613A (ja) * | 1989-03-28 | 1990-10-12 | Univ Nagoya | 半導体多層薄膜の作成方法 |
JPH04137779A (ja) * | 1990-09-28 | 1992-05-12 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911276A (fi) * | 1972-05-29 | 1974-01-31 | ||
JPS52106673A (en) * | 1976-03-04 | 1977-09-07 | Matsushita Electric Ind Co Ltd | Crystal growing method and device thereof |
JPS5384457A (en) * | 1976-12-29 | 1978-07-25 | Fujitsu Ltd | Liquid-phase epitaxial growth method |
JPS54115062A (en) * | 1978-02-28 | 1979-09-07 | Mitsubishi Electric Corp | Liquid phase epitaxial growth unit |
-
1985
- 1985-11-29 JP JP26971385A patent/JPS62128522A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911276A (fi) * | 1972-05-29 | 1974-01-31 | ||
JPS52106673A (en) * | 1976-03-04 | 1977-09-07 | Matsushita Electric Ind Co Ltd | Crystal growing method and device thereof |
JPS5384457A (en) * | 1976-12-29 | 1978-07-25 | Fujitsu Ltd | Liquid-phase epitaxial growth method |
JPS54115062A (en) * | 1978-02-28 | 1979-09-07 | Mitsubishi Electric Corp | Liquid phase epitaxial growth unit |
Also Published As
Publication number | Publication date |
---|---|
JPS62128522A (ja) | 1987-06-10 |
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