JPH0332530Y2 - - Google Patents
Info
- Publication number
- JPH0332530Y2 JPH0332530Y2 JP11846886U JP11846886U JPH0332530Y2 JP H0332530 Y2 JPH0332530 Y2 JP H0332530Y2 JP 11846886 U JP11846886 U JP 11846886U JP 11846886 U JP11846886 U JP 11846886U JP H0332530 Y2 JPH0332530 Y2 JP H0332530Y2
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- room
- main chamber
- addition
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002019 doping agent Substances 0.000 claims description 89
- 239000013078 crystal Substances 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000005303 weighing Methods 0.000 claims description 9
- 238000003780 insertion Methods 0.000 claims description 7
- 230000037431 insertion Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000035699 permeability Effects 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009423 ventilation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11846886U JPH0332530Y2 (https=) | 1986-08-01 | 1986-08-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11846886U JPH0332530Y2 (https=) | 1986-08-01 | 1986-08-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6327480U JPS6327480U (https=) | 1988-02-23 |
| JPH0332530Y2 true JPH0332530Y2 (https=) | 1991-07-10 |
Family
ID=31004948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11846886U Expired JPH0332530Y2 (https=) | 1986-08-01 | 1986-08-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0332530Y2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11499245B2 (en) * | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
-
1986
- 1986-08-01 JP JP11846886U patent/JPH0332530Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327480U (https=) | 1988-02-23 |
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