JPH033190U - - Google Patents

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Publication number
JPH033190U
JPH033190U JP6326189U JP6326189U JPH033190U JP H033190 U JPH033190 U JP H033190U JP 6326189 U JP6326189 U JP 6326189U JP 6326189 U JP6326189 U JP 6326189U JP H033190 U JPH033190 U JP H033190U
Authority
JP
Japan
Prior art keywords
drive circuit
inverter
turn
semiconductor devices
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6326189U
Other languages
Japanese (ja)
Other versions
JP2504918Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6326189U priority Critical patent/JP2504918Y2/en
Publication of JPH033190U publication Critical patent/JPH033190U/ja
Application granted granted Critical
Publication of JP2504918Y2 publication Critical patent/JP2504918Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の一実施例を示す回路図、第２
図は一般的なインバータの回路図、第３図は従来
例を示す要部回路図である。 １……トランス、２……整流器、３ａ〜３ｆ…
…リアクトル、ＧＵ、ＧＶ、ＧＸ、ＧＹ……ゲー
ト駆動回路、ＴｒＵ、ＴｒＶ、ＴｒＸ、ＴｒＹ…
…トランジスタ。 Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a circuit diagram of a general inverter, and FIG. 3 is a main part circuit diagram showing a conventional example. 1...Transformer, 2...Rectifier, 3a to 3f...
...Reactor, GU, GV, GX, GY... Gate drive circuit, TrU, TrV, TrX, TrY...
...transistor.

Claims (1)

【実用新案登録請求の範囲】 自己消弧形半導体素子をブリツジ接続して成る
インバータの駆動回路において、 前記インバータの負極端側アームに接続された
前記自己消弧形半導体素子に各々ゲート信号を供
給するための各ゲート駆動回路と、該駆動回路用
共通電源部とを結ぶ電路にリアクトルを各々介挿
したことを特徴とするインバータの駆動回路。[Claims for Utility Model Registration] In an inverter drive circuit formed by bridge-connecting self-turn-off semiconductor devices, a gate signal is supplied to each of the self-turn-off semiconductor devices connected to the negative end arm of the inverter. 1. A drive circuit for an inverter, characterized in that a reactor is inserted in each electric path connecting each gate drive circuit for driving the drive circuit and a common power supply section for the drive circuit.
JP6326189U 1989-05-31 1989-05-31 Inverter drive circuit Expired - Lifetime JP2504918Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6326189U JP2504918Y2 (en) 1989-05-31 1989-05-31 Inverter drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6326189U JP2504918Y2 (en) 1989-05-31 1989-05-31 Inverter drive circuit

Publications (2)

Publication Number Publication Date
JPH033190U true JPH033190U (en) 1991-01-14
JP2504918Y2 JP2504918Y2 (en) 1996-07-24

Family

ID=31593149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6326189U Expired - Lifetime JP2504918Y2 (en) 1989-05-31 1989-05-31 Inverter drive circuit

Country Status (1)

Country Link
JP (1) JP2504918Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854789U (en) * 1971-10-23 1973-07-14
WO2020255276A1 (en) * 2019-06-19 2020-12-24 三菱電機株式会社 Semiconductor drive device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854789U (en) * 1971-10-23 1973-07-14
WO2020255276A1 (en) * 2019-06-19 2020-12-24 三菱電機株式会社 Semiconductor drive device
JPWO2020255276A1 (en) * 2019-06-19 2021-10-21 三菱電機株式会社 Semiconductor drive

Also Published As

Publication number Publication date
JP2504918Y2 (en) 1996-07-24

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