JPH0329759Y2 - - Google Patents

Info

Publication number
JPH0329759Y2
JPH0329759Y2 JP1982161709U JP16170982U JPH0329759Y2 JP H0329759 Y2 JPH0329759 Y2 JP H0329759Y2 JP 1982161709 U JP1982161709 U JP 1982161709U JP 16170982 U JP16170982 U JP 16170982U JP H0329759 Y2 JPH0329759 Y2 JP H0329759Y2
Authority
JP
Japan
Prior art keywords
vacuum
high voltage
probe
microchannel plate
mcp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982161709U
Other languages
Japanese (ja)
Other versions
JPS5966178U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16170982U priority Critical patent/JPS5966178U/en
Publication of JPS5966178U publication Critical patent/JPS5966178U/en
Application granted granted Critical
Publication of JPH0329759Y2 publication Critical patent/JPH0329759Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 〔考案の技術分野〕 本考案は、真空中でマイクロチヤネルプレート
をセンサとして放射線を測定する放射線計測装置
に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a radiation measuring device that measures radiation in a vacuum using a microchannel plate as a sensor.

〔考案の技術的背景とその問題点〕[Technical background of the invention and its problems]

第1図にマイクロチヤネルプレートをセンサと
して用いた放射線計測装置の従来例を示す。真空
容器1は常に真空ポンプ10で高真空状態に保た
れており、ここに放射線2が入射し、マイクロチ
ヤネルプレート(以下MCPという)3に入ると、
ここで電子増倍され電荷パルスとしてアノード3
aから出力される。MCP3からの出力は前置増
幅器4で弁別可能なレベルまで増幅され、波形整
形回路5でノイズ成分を除去するために外部設定
電圧と比較され、設定された電荷レベル以上のも
のが論理パルスとしてカウンタ6に入つて計数さ
れ、所要のデータ処理装置7に送られる。8,9
はそれぞれMCP3に電子増倍させるための高圧
電源およびバイアス電源で、高圧電源8は通常
1000〜1500V、バイアス電源9は100〜200Vをそ
れぞれ印加している。
FIG. 1 shows a conventional example of a radiation measuring device using a microchannel plate as a sensor. A vacuum container 1 is always kept in a high vacuum state by a vacuum pump 10, and when radiation 2 enters here and enters a microchannel plate (hereinafter referred to as MCP) 3,
Here, the electrons are multiplied and converted into a charge pulse at the anode 3.
Output from a. The output from the MCP 3 is amplified to a distinguishable level by a preamplifier 4, and compared with an externally set voltage in order to remove noise components by a waveform shaping circuit 5. Charge levels equal to or higher than the set charge level are counted as logic pulses. 6 and is counted and sent to a required data processing device 7. 8,9
are a high-voltage power supply and a bias power supply for electron multiplication in MCP3, respectively, and high-voltage power supply 8 is normally
1000 to 1500V, and the bias power supply 9 applies 100 to 200V, respectively.

上記の従来装置では、真空ポンプ10が正常に
動作していて真空容器1内が高真空に保たれてい
る場合は何等問題がないが、真空ポンプの故障に
より真空度が下つたり、MCP3に高電圧を印加
したまま真空容器1の蓋をあけたりすると、
MCP3が絶緑破壊されるケースが度々あつた。
With the conventional device described above, there is no problem if the vacuum pump 10 is operating normally and the vacuum container 1 is maintained at a high vacuum, but if the vacuum pump malfunctions, the vacuum level may drop or the MCP 3 may If you open the lid of vacuum container 1 while applying high voltage,
There were many cases where MCP3 was completely destroyed.

〔考案の目的〕 本考案は、真空度低下発生時にもMCPの絶緑
破壊を回避できる放射線計測装置を提供すること
を目的とする。
[Purpose of the invention] The purpose of the invention is to provide a radiation measuring device that can avoid permanent destruction of the MCP even when a decrease in the degree of vacuum occurs.

〔考案の概要〕[Summary of the idea]

本考案は、高真空に保たれた真空容器内に配置
されたMCPにより前記容器内へ入射した放射線
を測定する放射線計測装置において、前記真空容
器内に真空プローブを設け、この容器内の真空度
が前記MCPに絶緑破壊を起す真空度に所定の余
裕幅を見込んだ真空度まで低下したときに前記真
空プローブからの信号により前記MCPに印加し
ている高電圧を遮断することを特徴とする放射線
計測装置を実現して所期の目的を達成した。
The present invention is a radiation measuring device that measures radiation incident into a vacuum container maintained at a high vacuum by an MCP placed in the container, and a vacuum probe is provided in the vacuum container to determine the degree of vacuum within the container. is characterized in that the high voltage applied to the MCP is cut off by a signal from the vacuum probe when the vacuum level falls to a vacuum level that allows for a predetermined margin for the vacuum level that causes permanent damage to the MCP. A radiation measuring device was realized and the intended purpose was achieved.

〔考案の実施例〕[Example of idea]

以下、本考案の実施例を図面を参照して説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

第2図および第3図に本考案による放射線計測
装置の一実施例を示す。第2図において、真空容
器1、MCP3、前置増幅器4、波形整形回路5、
カウンタ6、データ処理装置7、高圧電源8、バ
イアス電源9、真空ポンプ10の各構成要素は第
1図の装置と同様である。
FIGS. 2 and 3 show an embodiment of the radiation measuring device according to the present invention. In FIG. 2, a vacuum vessel 1, an MCP 3, a preamplifier 4, a waveform shaping circuit 5,
The components of the counter 6, data processing device 7, high voltage power source 8, bias power source 9, and vacuum pump 10 are the same as those in the device shown in FIG.

そして、真空容器1内のMCP3の近傍に真空
プローブ11を設け、真空プローブ用高圧電源1
2により高圧が印加され、さらに電流検出器13
が直列接続されている。一方、MCP3に高電圧
を印加する高圧電源8には直列に抵坑14が接続
され、その出力が一方はMCP3に、他方は高圧
用スイツチ・トランジスタ15のエミツタにそれ
ぞれ接続されている。高圧用スイツチ・トランジ
スタ15のコレクタは、高圧電源8の正極に接続
され、ベースには電流検出器13の出力信号が接
続されている。
Then, a vacuum probe 11 is provided near the MCP 3 in the vacuum container 1, and a high voltage power supply 1 for the vacuum probe is installed.
A high voltage is applied by the current detector 13.
are connected in series. On the other hand, a resistor 14 is connected in series to a high voltage power supply 8 that applies a high voltage to the MCP 3, and its output is connected to the MCP 3 on one side and the emitter of a high voltage switch transistor 15 on the other side. The collector of the high voltage switch transistor 15 is connected to the positive electrode of the high voltage power supply 8, and the base thereof is connected to the output signal of the current detector 13.

真空プローブ11の一例を第3図に示す。プロ
ーブ支え11aに1対のプローブ電極11b,1
1cが突設された形状であり、MCP3の近くに
絶緑板16をはさんで設けられている。プローブ
電極11bと11cの間隔dおよび印加される電
圧V3は、パツシエンの法則を用いて、MCP3が
絶緑破壊を起す真空度に所定の余裕幅を見込んだ
真空度でプローブ電極間に放電が起るように設定
しておく。
An example of the vacuum probe 11 is shown in FIG. A pair of probe electrodes 11b, 1 are attached to the probe support 11a.
1c has a protruding shape, and is provided near the MCP 3 with a green plate 16 sandwiched therebetween. The distance d between the probe electrodes 11b and 11c and the applied voltage V3 are determined using Patsien's law to ensure that discharge occurs between the probe electrodes at a vacuum level that allows for a predetermined margin for the vacuum level at which the MCP3 undergoes permanent damage. Set it to happen.

上記のように構成された本考案一実施例の放射
線計測装置では、真空ポンプ10の停止等により
真空容器1内の真空度が低下すると、まず真空プ
ローブ11が放電する。このとき電流検出器13
が作動し真空度低下信号を外部に出力する。この
信号が高圧用スイツチ・トランジスタ15のベー
スに入り高圧用スイツチ・トランジスタ15がオ
ンし、MCP3へ印加されている高電圧が遮断さ
れ、MCP3の絶緑破壊を未然に防ぐことができ
る。また、高圧用スイツチ・トランジスタ15が
オンしたとき高圧電源8は直列に入つている抵抗
14によつて保護される。
In the radiation measuring device according to the embodiment of the present invention configured as described above, when the degree of vacuum in the vacuum container 1 decreases due to, for example, stopping the vacuum pump 10, the vacuum probe 11 first discharges. At this time, the current detector 13
is activated and outputs a vacuum level reduction signal to the outside. This signal enters the base of the high-voltage switch transistor 15, turns on the high-voltage switch transistor 15, cuts off the high voltage being applied to the MCP 3, and prevents permanent damage to the MCP 3. Further, when the high voltage switch transistor 15 is turned on, the high voltage power supply 8 is protected by the resistor 14 connected in series.

なお、本考案は上述した実施例に限らず、下記
のように変形して実施することができる。
It should be noted that the present invention is not limited to the embodiments described above, and can be implemented with modifications as described below.

〔1〕 真空プローブは第3図に示したものに限
らず、少量のガスをフローした、高速動作が可
能な真空度計を代用してもよい。
[1] The vacuum probe is not limited to the one shown in FIG. 3, and a vacuum gauge capable of high-speed operation that flows a small amount of gas may be used instead.

〔2〕 真空プローブをMCP3の近傍のほかに、
真空ポンプ10の付近や真空容器1の開口部付
近にも設ければ真空度低下を一層早く検出でき
るメリツトがある。
[2] In addition to the vacuum probe near MCP3,
If it is provided near the vacuum pump 10 or near the opening of the vacuum container 1, there is an advantage that a decrease in the degree of vacuum can be detected more quickly.

〔3〕 本考案による放射線計測装置はセンサに
MCPを用いているので、真空中での電子線ま
たは荷電粒子の計測にもそのまま応用できる。
[3] The radiation measuring device according to the present invention can be used as a sensor.
Since it uses MCP, it can be directly applied to measurements of electron beams or charged particles in vacuum.

〔考案の効果〕[Effect of idea]

以上詳述したように本考案によれば、MCPが
配置されている真空容器内に真空プローブを設
け、真空容器内の真空度がMCPに絶緑破壊を起
す真空度まで低下しないうちに真空度の低下をい
ち早く検出してMCPへ印加されている高電圧を
遮断するようにしたので、MCPの絶緑破壊を未
然に防止することができ、従来装置の問題点を完
全に解消することができる。
As described in detail above, according to the present invention, a vacuum probe is provided in the vacuum container in which the MCP is placed, and the vacuum probe is installed in the vacuum container so that the vacuum level within the vacuum container does not decrease to a level that would cause permanent damage to the MCP. Since the high voltage applied to the MCP is quickly detected by detecting a drop in the voltage, it is possible to prevent permanent damage to the MCP and completely eliminate the problems of conventional devices. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図はMCPをセンサとして用いた放射線計
測装置の従来例を示す構成図、第2図は本考案一
実施例の放射線計測装置を示す構成図、第3図は
第2図の真空プローブの詳細図である。 1……真空容器、2……入射放射線、3……マ
イクロチヤネルプレート(MCP)、4……前置増
幅器、5……波形整形回路、6……カウンタ、7
……データ処理装置、8……高圧電源、9……バ
イアス電源、10……真空ポンプ、11……真空
プローブ、11a……プローブ支え、11b,1
1c……プローブ電極、12……真空プローブ用
高圧電源、13……電流検出器、14……抵抗、
15……高圧用スイツチ・トランジスタ、16…
…絶緑板。
Fig. 1 is a block diagram showing a conventional example of a radiation measuring device using MCP as a sensor, Fig. 2 is a block diagram showing a radiation measuring device according to an embodiment of the present invention, and Fig. 3 is a block diagram showing a radiation measuring device according to an embodiment of the present invention. It is a detailed view. 1... Vacuum vessel, 2... Incident radiation, 3... Microchannel plate (MCP), 4... Preamplifier, 5... Waveform shaping circuit, 6... Counter, 7
...Data processing device, 8...High voltage power supply, 9...Bias power supply, 10...Vacuum pump, 11...Vacuum probe, 11a...Probe support, 11b, 1
1c... Probe electrode, 12... High voltage power supply for vacuum probe, 13... Current detector, 14... Resistor,
15... High voltage switch transistor, 16...
...Zetryoku board.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高真空に保たれた真空容器内に配置されたマイ
クロチヤネルプレートにより前記容器内へ入射し
た放射線を測定する放射線計測装置において、プ
ローブ支えに1対のプローブ電極が間隔をおいて
突設され且つ1対のプローブ電極間には専用の高
圧電源により高圧が印加されると共に電流検出器
が直列に接続された真空プローブが前記真空容器
内に設けられ、さらに前記マイクロチヤネルプレ
ートに高電圧を印加する高圧電源に直列に抵坑が
接続され、この抵抗の出力が一方は前記マイクロ
チヤネルプレートに、他方は高圧用スイツチ・ト
ランジスタのエミツタにそれぞれ接続され、この
高圧用スイツチ・トランジスタのコレクタは前記
マイクロチヤネルプレートに高電圧を印加する高
圧電源の正極に接続され、前記トランジスタのベ
ースには前記電流検出器の出力信号が接続されて
成り、前記真空プローブの1対のプローブ電極の
間隔および印加する電圧が、前記マイクロチヤネ
ルプレートが絶緑破壊を起す真空度に所定の余裕
幅を見込んだ真空度で前記プローブ電極間に放電
が起るように設定されたことを特徴とする放射線
計測装置。
In a radiation measurement device that measures radiation incident into a vacuum container maintained at a high vacuum using a microchannel plate placed in the container, a pair of probe electrodes are provided protruding from a probe support at an interval, and one A high voltage is applied between the pair of probe electrodes by a dedicated high voltage power supply, and a vacuum probe with a current detector connected in series is provided in the vacuum container, and a high voltage is applied to apply a high voltage to the microchannel plate. A resistor is connected in series with the power supply, and one output of this resistor is connected to the microchannel plate and the other is connected to the emitter of a high voltage switch transistor, and the collector of this high voltage switch transistor is connected to the microchannel plate. The output signal of the current detector is connected to the base of the transistor, and the distance between the pair of probe electrodes of the vacuum probe and the voltage to be applied are A radiation measurement device characterized in that the microchannel plate is set so that discharge occurs between the probe electrodes at a degree of vacuum that allows for a predetermined margin in the degree of vacuum that causes permanent damage.
JP16170982U 1982-10-27 1982-10-27 Radiation measurement device Granted JPS5966178U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16170982U JPS5966178U (en) 1982-10-27 1982-10-27 Radiation measurement device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16170982U JPS5966178U (en) 1982-10-27 1982-10-27 Radiation measurement device

Publications (2)

Publication Number Publication Date
JPS5966178U JPS5966178U (en) 1984-05-02
JPH0329759Y2 true JPH0329759Y2 (en) 1991-06-25

Family

ID=30355308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16170982U Granted JPS5966178U (en) 1982-10-27 1982-10-27 Radiation measurement device

Country Status (1)

Country Link
JP (1) JPS5966178U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118293B2 (en) * 1987-04-14 1995-12-18 日本原子力研究所 Microchannel plate detector protector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129838A (en) * 1974-09-06 1976-03-13 Nippon Electric Co
JPS54119745A (en) * 1978-03-08 1979-09-17 Hitachi Ltd Air conditioner

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129838A (en) * 1974-09-06 1976-03-13 Nippon Electric Co
JPS54119745A (en) * 1978-03-08 1979-09-17 Hitachi Ltd Air conditioner

Also Published As

Publication number Publication date
JPS5966178U (en) 1984-05-02

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