JPH03295894A - Method for liquid phase epitaxy - Google Patents
Method for liquid phase epitaxyInfo
- Publication number
- JPH03295894A JPH03295894A JP9758990A JP9758990A JPH03295894A JP H03295894 A JPH03295894 A JP H03295894A JP 9758990 A JP9758990 A JP 9758990A JP 9758990 A JP9758990 A JP 9758990A JP H03295894 A JPH03295894 A JP H03295894A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melt
- temp
- crucible
- good reproducibility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 17
- 238000004943 liquid phase epitaxy Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000155 melt Substances 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 19
- 238000007598 dipping method Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体材料をデイツプ法により成長させる方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for growing semiconductor materials by a dip method.
（従来の技術）
液相エピタキシャル成長法の一種であるデイツプ法は、
成長させようとする結晶の成分元素を含んだ融液（メル
ト）中に基板を浸漬して前記基板上に結晶を成長させる
方法である。例えば、６Ｈ型炭化珪素（以下、６Ｈ−８
ｉＣ）を用いた青色発光ダイオード製造工程で、６Ｈ−
８ｉＣ基板上に６Ｈ−８ｉＣ単結晶薄膜を成長させる時
に用いられる。(Prior art) The dip method, which is a type of liquid phase epitaxial growth method,
This is a method of growing a crystal on the substrate by immersing the substrate in a melt containing the constituent elements of the crystal to be grown. For example, 6H type silicon carbide (hereinafter referred to as 6H-8
In the blue light emitting diode manufacturing process using iC), 6H-
It is used when growing a 6H-8iC single crystal thin film on an 8iC substrate.
第２図に、従来のデイツプ法による６Ｈ−８ｉＣ単結晶
薄膜のエピタキシャル成長装置の一例を示す。この装置
を用いての６Ｈ−８ｉＣ単結晶薄膜の成長は、黒鉛製坩
堝８に珪素を装入し、中央に開口部を有する黒鉛製蓋体
９を前記坩堝８の上端開口に装着した後、不活性ガス雰
囲気中で高周波誘導加熱法などにより坩堝８を１５００
℃以上に加熱して珪素を融解して珪素融液１０とし、高
温を維持し、かつ温度勾配を設けて坩堝８の高温部の内
壁から珪素融液１０中に炭素を溶出させて炭素飽和させ
た後、基板ホルダー１１に保持された６Ｈ−８ｉＣ基板
１２を珪素融液１０の低温部中に浸すことによって、６
Ｈ−８ｉＣ基板１２上に６Ｈ−８ｉＣ単結晶薄膜を成長
させるものである。FIG. 2 shows an example of an apparatus for epitaxial growth of a 6H-8iC single crystal thin film using the conventional dip method. To grow a 6H-8iC single crystal thin film using this device, silicon is charged into a graphite crucible 8, and a graphite lid 9 having an opening in the center is attached to the upper opening of the crucible 8. The crucible 8 was heated to 1500 ml by high-frequency induction heating in an inert gas atmosphere.
℃ or higher to melt silicon to form a silicon melt 10, maintain the high temperature, and provide a temperature gradient to elute carbon from the inner wall of the high temperature part of the crucible 8 into the silicon melt 10 to achieve carbon saturation. After that, the 6H-8iC substrate 12 held by the substrate holder 11 is immersed in the low temperature part of the silicon melt 10.
A 6H-8iC single crystal thin film is grown on an H-8iC substrate 12.
６Ｈ−８ｉＣ青色発光ダイオードは、ｎ型６Ｈ−８ｉＣ
単結晶薄膜およびｎ型６Ｈ−３ｉＣ単結晶薄膜を連続し
て成長させることによって得られるｐｎ接合を利用した
ものであり、それらの膜厚が青色発光ダイオードの発光
輝度に影響する。従って、再現性よく高輝度青色発光ダ
イオードを製造するには、デイツプ法によってｎ型６Ｈ
−８ｉＣ単結晶ｌＷ膜およびｐ！！！６Ｈ−３ｉＣ単結
晶薄膜を成長させる際に、目標の膜厚のｎ型膜およびｐ
型膜を再現性よく得ることが必要不可欠である。6H-8iC blue light emitting diode is n-type 6H-8iC
It utilizes a pn junction obtained by successively growing a single crystal thin film and an n-type 6H-3iC single crystal thin film, and the thickness of these films affects the luminance of the blue light emitting diode. Therefore, in order to manufacture high-brightness blue light-emitting diodes with good reproducibility, it is necessary to use n-type 6H light emitting diodes using the dip method.
-8iC single crystal lW film and p! ! ! When growing a 6H-3iC single crystal thin film, an n-type film and a p-type film of the target thickness are grown.
It is essential to obtain a mold film with good reproducibility.
このようなデイツプ法による６Ｈ−３ｉＣ基板上への６
Ｈ−８ｉＣ単結晶薄膜の成長の例には、ジャーナル オ
ブ アプライド フィジックス（Ｊｏｕｒｎａｌ ｏｆ
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ） 第５０巻、第
８２１５頁（１９７９年）、特開昭６０−２６０４９８
号などかある。その際、珪素融液の温度勾配中では、基
板位置によって成長速度が異なる。例えば、ジ丁−ナル
オブ アプライド フィンックス（Ｊｏｕｒｎａｌ
ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ） 第５０巻
、第８２１５頁（１９７９年）の場合、成長を行う基板
位置（高さ）とメルトバック（高温部で基板が融液中で
エツチングされる現象）を行う基板位置（高さ）の差が
わずか３ｍｍであり、その間では基板の上下位置が変化
すると成長膜厚も著しく変化する。従って、目標の膜厚
の成長膜を得るには、基板位置を精密・正確に制御する
ことが必要不可欠である。6 onto a 6H-3iC substrate by such a dip method.
Examples of growing H-8iC single crystal thin films include the Journal of Applied Physics.
Applied Physics) Volume 50, Page 8215 (1979), JP-A-60-260498
There is a number etc. At this time, the growth rate differs depending on the position of the substrate in the temperature gradient of the silicon melt. For example, Journal of Applied Finix
of Applied Physics) Volume 50, Page 8215 (1979), the substrate position (height) for growth and the substrate position (height) for meltback (a phenomenon in which the substrate is etched in a melt in a high temperature area) The difference in height (height) is only 3 mm, and if the vertical position of the substrate changes between these two, the thickness of the grown film will change significantly. Therefore, in order to obtain a grown film with a target thickness, it is essential to precisely and accurately control the substrate position.
（発明が解決しようとする課題）
本発明は、デイツプ法において融液（メルト）内の基板
浸漬位置を精密・正確に制御することによって目標の膜
厚の成長膜を再現性よく得る結晶成長方法を提供するこ
とを目的とするものである。(Problems to be Solved by the Invention) The present invention provides a crystal growth method in which a grown film of a target thickness can be obtained with good reproducibility by precisely and accurately controlling the immersion position of a substrate in a melt in the dip method. The purpose is to provide the following.
（課題を解決するための手段）
本発明は、基板ホルダーの先端に設置し７た基板を坩堝
中の融液（メルト）に浸漬して前記基板上に薄膜を液相
エピキシャル成長させる方法において、前記融液と前記
基板ホルタ−の間に導通検知器を設置し、前記基板ホル
ダーを前記融液の」一部から降下させ、前記基板か融液
に接した時点を前記導通検知器により検知し、検知した
１ケ置から前記基板を所定の深さに浸漬することによっ
て目標の膜厚の成長膜を再現性よく得ることを特徴とす
る。(Means for Solving the Problems) The present invention provides a method for liquid phase epitaxial growth of a thin film on a substrate by immersing a substrate placed at the tip of a substrate holder in a melt in a crucible. A continuity detector is installed between the melt and the substrate holder, the substrate holder is lowered from a portion of the melt, and the continuity detector detects when the substrate comes into contact with the melt. A grown film having a target thickness can be obtained with good reproducibility by immersing the substrate to a predetermined depth from one detected position.
（作用） 以下、本発明を図面を用いて詳細に説明する。(effect) Hereinafter, the present invention will be explained in detail using the drawings.
第１図（ａ）は、本発明の液相エピタキシャル成長り法
において用いられる装置構成の一例をＩス式的に示す図
であり、坩堝１の上端開口には、中央に開口部を釘する
蓋体２か装着されており、また坩堝１の内部には成長さ
せようとする結晶の成分元素を含んだ融液（メルト）３
か収納されている。そして、坩堝１の上方からは、蓋体
２の中央開口部を挿通して、基板ホルタ−４に保持され
た基板５を融液３中へと降下させるか、この基板５を精
密・正確に上下させるために、基板ホルダー４の上端部
側には、例えばネジ機構などによる基板上下機構６か設
けられている。しかして、この装置においては、電気的
導通を検知する導通検知器７がさらに備えられており、
この導通検知器７より延長された導電線の一方は、基板
ホルダー４の先端部ないしは基板５に接続されており、
また他方の導電線は融液３内へと浸漬されている。FIG. 1(a) is a diagram showing an example of an apparatus configuration used in the liquid phase epitaxial growth method of the present invention in an I-style manner. The body 2 is attached to the crucible 1, and inside the crucible 1 is a melt 3 containing the constituent elements of the crystal to be grown.
or stored. Then, from above the crucible 1, the substrate 5 held by the substrate holter 4 is lowered into the melt 3 by passing through the center opening of the lid 2, or the substrate 5 is precisely and accurately inserted into the melt 3. In order to move the substrate up and down, a substrate up and down mechanism 6, such as a screw mechanism, is provided on the upper end side of the substrate holder 4. Therefore, this device further includes a continuity detector 7 that detects electrical continuity,
One of the conductive wires extending from the continuity detector 7 is connected to the tip of the substrate holder 4 or the substrate 5,
The other conductive wire is immersed into the melt 3.
結晶成長は、以下のように行われる。ます、成長させよ
うとする結晶の成分元素を含んだ融液３内に温度勾配（
温度差）を設け、その低温部にて融液３中の溶質を過飽
和状態にしまた後に、基板５を融ｌｌｌ ３にデイツプ
する。その際、基板ホルダー４の先端あるいは基板５と
融液３との間の導通を導通検知器７によりモニターして
おくと、基板５か融液３に接した位置を知ることかでき
、そこを基準点として基板５を精密・正確に降下させれ
は、基板５を常に融液３の液面から目標の（Ｉ′Ｌ置に
再現性よく設置でき、従って、温度・温度勾配・融液の
量なとの他の結晶成長条件を一定にしておく限り再現性
よく目標の膜厚の成長膜が得られる。Crystal growth is performed as follows. First, a temperature gradient (
A temperature difference) is provided, and the solute in the melt 3 is brought to a supersaturated state in the low temperature part, and then the substrate 5 is dipped into the melt 3. At that time, if the continuity between the tip of the substrate holder 4 or the substrate 5 and the melt 3 is monitored by the continuity detector 7, the position where the substrate 5 is in contact with the melt 3 can be known, and the position can be detected. If the substrate 5 is lowered precisely and accurately as a reference point, the substrate 5 can always be placed at the target (I'L) position from the surface of the melt 3 with good reproducibility, and therefore the temperature, temperature gradient, As long as other crystal growth conditions such as the amount are kept constant, a grown film with the target thickness can be obtained with good reproducibility.
第１図（ａ）の場合、基板ボルダ−４の先端と融液３の
間の導通をモニターしているので結晶成長温度で融液３
か導体であることが必要条件てある。もし、坩堝１およ
び基板ホルダー４も導体であるような場合には、第１図
（ｂ）に示すように坩堝１と基板ホルダー４の間の導通
をモニターしてもよい。In the case of Fig. 1(a), since the conduction between the tip of the substrate boulder 4 and the melt 3 is monitored, the melt 3 is kept at the crystal growth temperature.
There is a requirement that it be a conductor. If crucible 1 and substrate holder 4 are also conductors, continuity between crucible 1 and substrate holder 4 may be monitored as shown in FIG. 1(b).
本発明は、炭素飽和した珪素融液からの炭化珪素（Ｓ
ｉ Ｃ）成長（黒鉛製坩堝使用）、砒素を含んだガリウ
ム融液からの砒化カリウム成長（黒鉛製坩堝、窒素ボロ
ン製坩堝など使用）、水銀−カドミウム−テルル系融液
からのテルル化水銀カドミウム成長（黒鉛製坩堝、石英
製坩堝など使用）などに適用可能である。The present invention produces silicon carbide (S) from a carbon-saturated silicon melt.
i C) Growth (using graphite crucible), potassium arsenide growth from gallium melt containing arsenic (using graphite crucible, nitrogen boron crucible, etc.), mercury cadmium telluride from mercury-cadmium-tellurium melt It can be applied to growth (using graphite crucibles, quartz crucibles, etc.).
特に、黒鉛のような導体製の坩堝および基板ホルダーを
用いた場合、第１図（ｂ）のような実施態様か可能とな
る。In particular, when a crucible and a substrate holder made of a conductor such as graphite are used, an embodiment as shown in FIG. 1(b) is possible.
（実施例）
実施例を第１図（ｂ）を用いて説明する。坩堝１、蓋体
２、基板ホルダー４は黒鉛製で基板５は６Ｈ型炭化珪素
（以下、６Ｈ−３ｉＣ）である。(Example) An example will be described using FIG. 1(b). The crucible 1, the lid 2, and the substrate holder 4 are made of graphite, and the substrate 5 is made of 6H type silicon carbide (hereinafter referred to as 6H-3iC).
室温にて、坩堝１に高純度珪素を装入した後、蓋体２を
のせ、アルゴン雰囲気中で高周波誘導加熱により坩堝１
を１７００〜１７５０℃に加熱した。珪素は約１４００
℃で融解するので、第１図（ｂ）のような状態が実現で
きた。基板位置は基板上下機構６により、上下方向に０
．１ｍｍの精度で制御可能である。放射温度計で坩堝１
の外壁の温度を測定したところ、第３図にような温度勾
配となっていた。この測定結果と後で示す第４図から、
この外壁の温度勾配同様、珪素融液３内に上部が低温、
下部（底部）が高温という温度勾配ができていることが
わかった。After charging high-purity silicon into the crucible 1 at room temperature, the lid 2 is placed on the crucible 1 and the crucible 1 is heated by high-frequency induction heating in an argon atmosphere.
was heated to 1700-1750°C. Silicon is about 1400
Since it melts at ℃, the state shown in Figure 1(b) was achieved. The board position is set to 0 in the vertical direction by the board up/down mechanism 6.
．． It can be controlled with an accuracy of 1 mm. Crucible 1 with radiation thermometer
When we measured the temperature of the outer wall of the building, we found a temperature gradient as shown in Figure 3. From this measurement result and Figure 4 shown later,
Similar to this temperature gradient on the outer wall, inside the silicon melt 3 there is a low temperature at the top.
It was found that there was a temperature gradient where the lower part (bottom) was hotter.
第３図のような状態を保持することにより、珪素融液３
中の高温部で、黒鉛坩堝１内壁から珪素融液３中に炭素
が溶出し、温度勾配と拡散によってそれが低温部に輸送
されて過飽和状態となる。By maintaining the state as shown in Fig. 3, the silicon melt 3
Carbon is eluted from the inner wall of the graphite crucible 1 into the silicon melt 3 in the high-temperature section, and is transported to the low-temperature section by the temperature gradient and diffusion, resulting in a supersaturated state.
この状態で６Ｈ−３ｉＣ基板を液面から７ｍｍ以内にデ
イツプすることにより、６Ｈ−８ｉＣの単結晶薄膜を成
長させることができた。By dipping the 6H-3iC substrate in this state to within 7 mm from the liquid surface, a 6H-8iC single crystal thin film could be grown.
液面位置をモニターせずに、液面の下５ｍｍの位置と思
われる位置に基板５を設置すると、成長速度は１１±３
μｍ／ｈｏｕｒであった。ところが、０．１ｍｍの精度
で上下位置を制御しながら基板５を、基板５と融液３が
導通した位置の下５．０ｍ＋ｎに設置したところ成長速
度の誤差は±１μｍ／ｈｏｕｒ以下に低減した。If the substrate 5 is placed at a position that is thought to be 5 mm below the liquid level without monitoring the liquid level position, the growth rate will be 11±3.
It was μm/hour. However, when the substrate 5 was placed 5.0 m+n below the point where the substrate 5 and the melt 3 were electrically connected while controlling the vertical position with an accuracy of 0.1 mm, the error in the growth rate was reduced to less than ±1 μm/hour. .
上記の液面位置をモニターする成長方法によって、液面
と基板との距離と、成長速度の関係を調べたのが第４図
である。これによると、液面下４゜８ｍｍ、 ５．
Ｏｎ＋ｍ、 ５． ２ｍｍでの成長速度がそれぞれ約１
４μｍ／ｈｏｕｒ、約１１μｍ／ｈｏｕｒ。FIG. 4 shows an investigation of the relationship between the distance between the liquid level and the substrate and the growth rate using the above growth method of monitoring the liquid level position. According to this, 4°8mm below the liquid level, 5.
On+m, 5. The growth rate at 2 mm is approximately 1
4 μm/hour, approximately 11 μm/hour.
約８μｍ／ｈｏｕｒであった。以上の結果から液面モニ
ターしない場合に、１１±３μｍ／ｈｏｕｒという成長
速度のばらつきか生したのは、基板位置か５．０ｍｍの
上下０．２ｍｍ内でばらついていたためと考えられる。It was about 8 μm/hour. From the above results, it is considered that the reason for the variation in growth rate of 11±3 μm/hour when the liquid level was not monitored was due to variation within 0.2 mm above and below the 5.0 mm substrate position.
（発明の効果）
以りに述べたように、デイツプ法において融液と基板ホ
ルダーの間に導通検知器を設置し、基板が融液に接した
時点を前記導通検知器により検知し、検知した位置から
基板を所定の深さに浸漬することにより、目標の膜厚の
成長膜を再現性よく得ることができた。(Effect of the invention) As described above, in the dip method, a continuity detector is installed between the melt and the substrate holder, and the continuity detector detects the point at which the substrate comes into contact with the melt. By dipping the substrate to a predetermined depth from a certain position, a grown film with a target thickness could be obtained with good reproducibility.
第１図（ａ）は、本発明の実施態様の一例を示す断面図
、第１図（ｂ）は、特に、坩堝および基板ホルダーが導
体である場合に可能となる別の実施態様の例の断面図で
ある。
第２図はデイツプ法による炭化珪素単結晶薄膜成長装置
の従来例を示す断面図である。
第３図は、実施例における坩堝外壁の温度勾配を示し、
第４図は実施例における基板の融液中での位置と成長速
度の関係を示す図である。
１・・・坩堝、２・・・蓋体、３・・融液（メルト）、
４・・・基板ホルタ−５・・・基板、６・・基板上下機
構、７・・・導通検知器、８・・黒鉛製坩堝、９・・・
黒鉛製蓋体、１０・・・珪素融液、１１・・・黒鉛製基
板ホルダー １２・・・炭化珪素基板。FIG. 1(a) is a cross-sectional view showing an example of an embodiment of the present invention, and FIG. 1(b) is an example of another embodiment that is possible, particularly when the crucible and substrate holder are conductors. FIG. FIG. 2 is a sectional view showing a conventional example of a silicon carbide single crystal thin film growth apparatus using the dip method. FIG. 3 shows the temperature gradient of the outer wall of the crucible in the example,
FIG. 4 is a diagram showing the relationship between the position of the substrate in the melt and the growth rate in Examples. 1... Crucible, 2... Lid, 3... Melt,
4... Substrate holter 5... Substrate, 6... Substrate up/down mechanism, 7... Continuity detector, 8... Graphite crucible, 9...
Graphite lid, 10... Silicon melt, 11... Graphite substrate holder, 12... Silicon carbide substrate.
Claims (1)
浸漬して前記基板上に薄膜を液相エピキシャル成長させ
る方法において、前記融液と前記基板ホルダーの間に導
通検知器を設置し、前記基板ホルダーを前記融液の上部
から降下させ、前記基板が融液に接した時点を前記導通
検知器により検知し、検知した位置から前記基板を所定
の深さに浸漬することによって目標の膜厚の成長膜を再
現性よく得ることを特徴とする液相エピタキシャル成長
方法。In a method for liquid phase epitaxial growth of a thin film on a substrate by immersing a substrate placed at the tip of a substrate holder in a melt in a crucible, a conduction detector is installed between the melt and the substrate holder, The substrate holder is lowered from above the melt, the continuity detector detects the point at which the substrate comes into contact with the melt, and the substrate is immersed to a predetermined depth from the detected position to obtain the target film thickness. A liquid phase epitaxial growth method characterized by obtaining a grown film with good reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9758990A JPH03295894A (en) | 1990-04-16 | 1990-04-16 | Method for liquid phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9758990A JPH03295894A (en) | 1990-04-16 | 1990-04-16 | Method for liquid phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03295894A true JPH03295894A (en) | 1991-12-26 |
Family
ID=14196428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9758990A Pending JPH03295894A (en) | 1990-04-16 | 1990-04-16 | Method for liquid phase epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03295894A (en) |
-
1990
- 1990-04-16 JP JP9758990A patent/JPH03295894A/en active Pending
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