JPH03295128A - Cathode for electronic tube - Google Patents
Cathode for electronic tubeInfo
- Publication number
- JPH03295128A JPH03295128A JP2096702A JP9670290A JPH03295128A JP H03295128 A JPH03295128 A JP H03295128A JP 2096702 A JP2096702 A JP 2096702A JP 9670290 A JP9670290 A JP 9670290A JP H03295128 A JPH03295128 A JP H03295128A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- earth metal
- metal oxide
- substrate
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 14
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 229910052788 barium Inorganic materials 0.000 claims abstract description 10
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 10
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 19
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 abstract description 15
- 239000011575 calcium Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 7
- 229910052712 strontium Inorganic materials 0.000 abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000725 suspension Substances 0.000 abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 abstract description 4
- 229910052791 calcium Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000001994 activation Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000011230 binding agent Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L calcium carbonate Substances [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- -1 alkaline earth metal carbonate Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＴＶ用ジブラウン管どに用いられる電子管用
陰極に関し、特に電子放射性物質層を改良した電子管用
陰極に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cathode for an electron tube used in a di-braun tube for TV, and more particularly to a cathode for an electron tube with an improved electron emissive material layer.
第２図に、例えば特開昭６２−８８２３９に開示されて
いる従来のＴＶ用ジブラウン管撮像管に用いられている
電子管用陰極の一例を示す０図において１はシリコン（
Ｓｉ）、マグネシウム（Ｍｇ）などの還元性元素を微量
含む主成分がニッケルからなる有底筒状の基体、１２は
この基体の底部上面に被着された厚さ１０μ以下の酸化
スカンジウム（ＳＣ２０３）層で、この酸化スカンジウ
ム層１２上には少なくともバリウム（Ｂａ）を含み、他
にストロンチウム（Ｓｒ）あるいは／及びカルシウム（
Ｃａ）を含むアルカリ土類金属酸化物からなる電子放射
物質層３が被着されている。次に４は上記基体ｌ内に配
設されたヒータで、加熱により上記電子放射物質層３か
ら熱電子を放出させる。FIG. 2 shows an example of an electron tube cathode used in a conventional TV di-braun tube image pickup tube disclosed in JP-A-62-88239, for example, in which 1 is silicon (
A bottomed cylindrical base whose main component is nickel and contains trace amounts of reducing elements such as Si) and magnesium (Mg), and 12 is scandium oxide (SC203) with a thickness of 10 μm or less deposited on the top surface of the bottom of this base. The scandium oxide layer 12 contains at least barium (Ba), and also contains strontium (Sr) and/or calcium (
An electron-emitting material layer 3 of an alkaline earth metal oxide containing Ca) is deposited. Next, reference numeral 4 denotes a heater disposed within the base 1, which causes the electron emitting material layer 3 to emit thermoelectrons by heating.
かかる構成の電子管用陰極において、基体１への酸化ス
カンジウムＮ１２及び電子放射物質層３の被着は次の様
にして行なわれる。まずアルカリ土類金属（Ｂａ、Ｓｒ
、Ｃａ）の炭酸塩を主成分とする懸濁液を作成し、懸濁
液をこの予め電子ビーム蒸着装置あるいはスパンタリン
グ装置などでその上面に酸化スカンジウム膜を形成した
基体１に塗布し、真空排気工程中にヒータ４によって加
熱する。この時、上記のアルカリ土類金属炭酸塩はアル
カリ土類金属の酸化物に変化する。その後、該アルカリ
土類金属酸化物の一部を還元し半導体的性質を有するよ
うに活性化を行ない、基体ｌ上にアルカリ土類金属酸化
物からなる電子放射物質層３を被着するものである。In the cathode for an electron tube having such a structure, the scandium oxide N12 and the electron emitting material layer 3 are deposited on the substrate 1 in the following manner. First, alkaline earth metals (Ba, Sr
, Ca), and apply the suspension to the substrate 1 on which a scandium oxide film has been formed in advance using an electron beam evaporation device or a sputtering device. It is heated by the heater 4 during the exhaust process. At this time, the above-mentioned alkaline earth metal carbonate changes into an alkaline earth metal oxide. Thereafter, a part of the alkaline earth metal oxide is reduced and activated to have semiconductor properties, and an electron emitting material layer 3 made of the alkaline earth metal oxide is deposited on the substrate l. be.
この活性化工程においては、アルカリ土類金属酸化物の
一部は次の様に反応している。即ち基体１中に含有され
たシリコン、マグネシウム等の還元性元素が拡散により
基体ｌの界面に移動し、さらに酸化スカンジウム膜中を
拡散し、アルカリ土類金属酸化物と反応する０例えばア
ルカリ土類金属酸化物として酸化バリウム（Ｂａｄ）
、還元性元素がシリコン（Ｓｉ）の場合、次式ｆｉｌの
様に反応する。In this activation step, a part of the alkaline earth metal oxide reacts as follows. That is, reducing elements such as silicon and magnesium contained in the substrate 1 move to the interface of the substrate 1 by diffusion, further diffuse in the scandium oxide film, and react with alkaline earth metal oxides. Barium oxide (Bad) as a metal oxide
When the reducing element is silicon (Si), the reaction occurs as shown in the following formula fil.
４ ＢａＯ＋ Ｓｉ ＝ ２ Ｂａ ＋ ＢａｔＳｉ０
４ （１１この反応の結果、上記酸化ス
カンジウム膜１２上に被着形成されたアルカリ土類金属
酸化物の一部が還元され、酸素欠乏型の半導体となり電
子放射が得られる。なお、還元性元素のシリコンは次式
（２）の様に酸化スカンジウムと反応し、原子状のスカ
ンジウムを生成する。4 BaO+ Si = 2 Ba + BatSi0
4 (11) As a result of this reaction, a part of the alkaline earth metal oxide deposited on the scandium oxide film 12 is reduced, becoming an oxygen-deficient semiconductor and emitting electrons. Silicon reacts with scandium oxide as shown in the following formula (2) to produce atomic scandium.
２５ＣＪ２ ＋ ３ Ｓｉ＝ ４ Ｓｃ ＋ ３ Ｓｉ
ｎｇ （２１次にこの原子状のスカンジウム
が、次式（３）のように前記式ｆｉｌで形成された中間
層（ＢａｔＳｉＯ４） を分解し、界面での酸化バリ
ウムとシリコンの反応が寿命中の長時間にわたって十分
行なわれ、０．５〜２．ＯＡ／−程度の電流密度動作に
おける寿命特性が改善されている。25CJ2 + 3 Si= 4 Sc + 3 Si
ng (21) Next, this atomic scandium decomposes the intermediate layer (BatSiO4) formed by the above formula fil as shown in the following formula (3), and the reaction between barium oxide and silicon at the interface continues for a long time during the life. This is carried out satisfactorily over a period of time, and the life characteristics at current density operation of about 0.5 to 2.OA/- are improved.
３ＢａｔＳｉ０４＋８Ｓｃ−＝６Ｂａ＋３Ｓｉ＋４Ｓｃ
ｚＯｓ （３１〔発明が解決しようとする課題〕
上述の如く、かかる構成の電子管用陰極においては、還
元性元素である、たとえばシリコンが、上記酸化スカン
ジウム膜１２中を拡散し電子放射物質層３との界面に達
するが、基体中のシリコンの拡散速度に比べ、酸化スカ
ンジウム中のシリコンの拡散速度が小さく、酸化バリウ
ムとシリコンの反応が不十分となり、初期エミッション
のばらつきが大でそのエミッション値も低いと云う問題
を有していた。3BatSi04+8Sc-=6Ba+3Si+4Sc
zOs (31 [Problem to be Solved by the Invention]) As described above, in the electron tube cathode having such a structure, a reducing element such as silicon diffuses through the scandium oxide film 12 and forms the electron emitting material layer 3. However, the diffusion rate of silicon in scandium oxide is lower than the diffusion rate of silicon in the substrate, and the reaction between barium oxide and silicon is insufficient, resulting in large variations in initial emissions and low emission values. There was a problem called.
この発明は、かかる問題を解消した電子管用陰極を提供
することを目的とする。An object of the present invention is to provide a cathode for an electron tube that solves this problem.
この発明の電子管用陰極は、少量の還元性金属を含有す
る主成分がニッケルからなる基体ｌ上に、希土類金属酸
化物と耐熱性金属との混合層２、及びバリウムを含むア
ルカリ土類金属酸化物を主成分とする電子放射物質層３
をこの順に被着形成したものである。The cathode for an electron tube of the present invention has a substrate l mainly composed of nickel containing a small amount of reducing metal, a mixed layer 2 of a rare earth metal oxide and a heat-resistant metal, and an alkaline earth metal oxide containing barium. Electron emitting material layer 3 mainly composed of
were deposited in this order.
この発明の電子管用陰極においては、基体１上に形成さ
れた、希土類金属酸化物と耐熱性金属との混合物Ｎ２中
の、ニッケル、モリブデン、タングステンなどの耐熱性
金属が、前記基体１中に含有されたシリコン、マグネシ
ウムの電子放射物質層３への拡散を容易にし、還元性金
属と電子放射物質層との反応を十分に行なわせる作用を
示すものである。In the electron tube cathode of the present invention, a heat-resistant metal such as nickel, molybdenum, or tungsten in the mixture N2 of a rare earth metal oxide and a heat-resistant metal formed on the base 1 is contained in the base 1. This exhibits an effect of facilitating the diffusion of silicon and magnesium into the electron emitting material layer 3 and causing a sufficient reaction between the reducing metal and the electron emitting material layer.
以下、この発明の一実施例を第１図に基づいて説明する
６図において、２は基体１の底部上面に形成された希土
類金属酸化物と耐熱金属とからなる混合物層、３は該希
土類金属酸化物層上に被着され、少なくともバリウムを
含み、他にストロンチウムあるいは／及びカルシウムを
含むアルカリ土類金属酸化物を主成分とした電子放射物
質層である。Hereinafter, in FIG. 6, an embodiment of the present invention will be explained based on FIG. The electron emitting material layer is deposited on the oxide layer and is mainly composed of an alkaline earth metal oxide that contains at least barium and also contains strontium and/or calcium.
かかる構成の電子管用陰極において、上記基体１への上
記混合物層２及び電子放射物質層３の被着方法について
説明する。先づバリウム、ストロンチウム、カルシウム
の三元炭酸塩を所望の重量％比をもって、バインダー及
び溶削を添加混合し懸／＠液を作成する。そして電子ビ
ーム蒸着装置、あるいはスパッタリング装置などを用い
て、その上面に希土類金属酸化物と耐熱性金属との混合
層２を形成したニッケルを主成分とする基体１上に、ス
プレィにより該懸濁液を約８０ミクロンの厚みで塗布し
、その後常法の如く炭酸塩から酸化物への分解過程、及
び酸化物の一部を還元する活性化過程を経て、電子放射
物質層３を基体ｌに被着形成する。In the cathode for an electron tube having such a structure, a method of applying the mixture layer 2 and the electron emitting material layer 3 to the substrate 1 will be explained. First, a ternary carbonate of barium, strontium, and calcium is added and mixed with a binder and a melting agent in a desired weight percent ratio to create a suspension liquid. Then, using an electron beam evaporation device or a sputtering device, the suspension is sprayed onto a substrate 1 mainly composed of nickel, on which a mixed layer 2 of a rare earth metal oxide and a heat-resistant metal is formed. is coated to a thickness of about 80 microns, and then the electron-emitting material layer 3 is coated on the substrate 1 through a process of decomposing the carbonate into an oxide and an activation process of reducing a part of the oxide, as in a conventional method. Form a deposit.
上述の希土類金属酸化物と耐熱性金属との混合層は、具
体的には、シリコン、マグネシウムを含有したニッケル
基体１上に重量比で１０％の酸化スカンジウムと９０％
のニッケル金属との混合層をスパッタリング法で厚さ０
．５μ形成した。その後、該混合層上にバリウム、スト
ロンチウム、カルシウムの炭酸塩（（Ｈａ、 Ｓｒ＋
Ｃａ） ＣＯｓ ） を上述の如く被着させた。得ら
れた陰極を電子銃に組み込み、通常の方法で排気加熱工
程、及びエージング工程を経て陰極線管を作成した。Specifically, the above-mentioned mixed layer of rare earth metal oxide and heat-resistant metal is made of 10% scandium oxide and 90% scandium oxide by weight on a nickel substrate 1 containing silicon and magnesium.
A mixed layer with nickel metal is sputtered to a thickness of 0.
．． 5μ was formed. Thereafter, barium, strontium, and calcium carbonates ((Ha, Sr+
Ca) COs) was deposited as described above. The obtained cathode was assembled into an electron gun, and a cathode ray tube was fabricated through an exhaust heating process and an aging process in a conventional manner.
第３図は、上記実施例陰極を実装した陰極線管と、前述
した従来例の陰極とを実装した陰極線管との初期電子放
射能力を比較した特性図であり、縦軸に最大陰極電流を
示したものである０本発明陰極を実装した陰極線管は、
図の如く最大陰極電流がばらつきも小さく高い値を示し
ている。このことは、本発明において、上記基体１中の
還元性元素であるシリコンが電子放射物質層３側に拡散
する際、上記混合層内の主にニッケル金属粒子近傍の結
晶粒界を通して拡散することになり、従来例の酸化スカ
ンジウム膜中のシリコン拡散に比べ十分速く、シリコン
と酸化バリウムとの反応によるＢａの生成が十分に行な
われ安定で優れた初期エミッション特性が得られること
を示す。FIG. 3 is a characteristic diagram comparing the initial electron emission capabilities of a cathode ray tube equipped with the cathode of the above embodiment and a cathode ray tube mounted with the conventional cathode described above, with the maximum cathode current shown on the vertical axis. A cathode ray tube equipped with the cathode of the present invention is
As shown in the figure, the maximum cathode current shows a high value with little variation. This means that in the present invention, when silicon, which is a reducing element in the base 1, diffuses toward the electron emitting material layer 3, it mainly diffuses through the crystal grain boundaries near the nickel metal particles in the mixed layer. This shows that Ba is sufficiently generated by the reaction between silicon and barium oxide, which is sufficiently faster than the diffusion of silicon in the conventional scandium oxide film, and stable and excellent initial emission characteristics can be obtained.
上記の酸化スカンジウムの重量比としては０．２−４０
重量％であることが望ましい。そしてまた、上記混合膜
の厚みとしては、ｏ、ｏｏｓ〜２．０−が望ましい。上
記耐熱性金属としては、Ｎ ｉ ＋ Ｍ ｏ ＋ ’ｄ
＋ Ｉ ｒ ＨＯｓＲｅ、Ｐｔが良好な結果を与える
。なお、上記説明においては、電子放射物質Ｎ３として
アルカリ土類金属酸化物を例としたが、他に例えばアル
カリ土類金属酸化物と希土類金属酸化物との混合物から
なる電子放射物質層３などの構成でも本発明の効果が得
られる。The weight ratio of the above scandium oxide is 0.2-40
Preferably, it is % by weight. Furthermore, the thickness of the mixed film is preferably o, oos to 2.0-. As the heat-resistant metal, N i + M o + 'd
+I r HOsRe, Pt gives good results. In the above description, an alkaline earth metal oxide was used as an example of the electron emitting material N3, but other materials such as the electron emitting material layer 3 made of a mixture of an alkaline earth metal oxide and a rare earth metal oxide may also be used. The effects of the present invention can also be obtained with this configuration.
以上詳細に説明したように、本発明によれば、基体上に
予め希土類金属酸化物及び耐熱性金属との混合層を形成
し、その上に少なくともバリウムを含むアルカリ土類金
属酸化物を主成分とする電子放射物質層を被着させた構
成としたので、従来の電子管用陰極に比べ、初期エミッ
ション特性のばらつきが著しく少な（優れた特性を示す
とともに、従来使用不可能であった、例えば２．５Ａ／
ｃｄ〜３．５Ａ／−の高電流密度下での寿命特性が著し
く向上する等の効果を有するものである。As explained in detail above, according to the present invention, a mixed layer of a rare earth metal oxide and a heat-resistant metal is formed on a substrate in advance, and an alkaline earth metal oxide containing at least barium is formed as a main component on the mixed layer. Because it has a structure in which an electron emitting material layer is deposited, the variation in initial emission characteristics is significantly smaller than that of conventional cathodes for electron tubes. .5A/
It has the effect of significantly improving the life characteristics under high current density of cd~3.5A/-.
第１図はこの発明の一実施例電子管用陰極の断面図、第
２図は従来の電子管用陰極の断面図、第３図は本発明実
施例及び従来例の最大陰極電流の比較特性図である。
１・・・基体、２・・・酸化物、金属混合層、３・・・
電子放射物質層。
なお、図中、同一符号は同−又は相当部分を示す。
第１図
第２図Fig. 1 is a sectional view of a cathode for an electron tube according to an embodiment of the present invention, Fig. 2 is a sectional view of a conventional cathode for an electron tube, and Fig. 3 is a comparative characteristic diagram of the maximum cathode current of an embodiment of the present invention and a conventional example. be. DESCRIPTION OF SYMBOLS 1... Base body, 2... Oxide, metal mixed layer, 3...
Electron emissive material layer. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Figure 1 Figure 2
Claims (1)
基体上に、希土類金属酸化物と耐熱性金属との混合層、
及びバリウムを含むアルカリ土類金属酸化物を主成分と
する電子放射物質層をこの順に被着形成したことを特徴
とする電子管用陰極。A mixed layer of a rare earth metal oxide and a heat-resistant metal on a substrate mainly composed of nickel containing a small amount of reducing metal,
A cathode for an electron tube, characterized in that an electron-emitting material layer whose main component is an alkaline earth metal oxide containing barium is deposited in this order.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670290A JP2730260B2 (en) | 1990-04-11 | 1990-04-11 | Cathode for electron tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670290A JP2730260B2 (en) | 1990-04-11 | 1990-04-11 | Cathode for electron tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03295128A true JPH03295128A (en) | 1991-12-26 |
| JP2730260B2 JP2730260B2 (en) | 1998-03-25 |
Family
ID=14172096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9670290A Expired - Fee Related JP2730260B2 (en) | 1990-04-11 | 1990-04-11 | Cathode for electron tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2730260B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6288239A (en) * | 1985-10-14 | 1987-04-22 | Mitsubishi Electric Corp | Cathode for electron tube |
| JPS63231835A (en) * | 1987-03-18 | 1988-09-27 | Mitsubishi Electric Corp | Cathode for electron tube |
-
1990
- 1990-04-11 JP JP9670290A patent/JP2730260B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6288239A (en) * | 1985-10-14 | 1987-04-22 | Mitsubishi Electric Corp | Cathode for electron tube |
| JPS63231835A (en) * | 1987-03-18 | 1988-09-27 | Mitsubishi Electric Corp | Cathode for electron tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2730260B2 (en) | 1998-03-25 |
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