JPH03291949A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a TAB-structure semiconductor device having a structure where the length of an output terminal can be made short by a method wherein individual semiconductor layers which are extended to the circumference of a semiconductor chip and in which an electric current flows are extended only from one side or two adjacent sides or three sides of the semiconductor chip. CONSTITUTION:A semiconductor device is composed of the following: an insulating film 4 in which conductor layer patterns are formed on the main face, a semiconductor chip 5 which is fixed to individual conductor layers 7 of the insulating film 4 via electrodes; and a coating body 13 with which the semiconductor chip 5 and prescribed parts of the insulating film 4 are covered. At the semiconductor device, the individual conductor layers 7 which are extended to the circumference of said semiconductor chip 5 and in which an electric current flows are extended only from one side, two adjacent sides or three sides of the semiconductor chip 5. For example, a semiconductor chip 5 is formed as a long body; electrodes 20 for output use are formed in one long side; electrodes 21 for input use are formed in short sides. An auxiliary pad 23 constituted in such a way that no electric current flows to the other long side is formed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device, and particularly to a semiconductor device in which a semiconductor chip is mounted on an insulating film having a conductive layer pattern on its main surface, and desired portions are covered with an insulating covering. Tenaru TAB (Tape
The present invention relates to a semiconductor integrated circuit device having an automated boarding structure.

[Conventional technology]

2. Description of the Related Art A semiconductor integrated circuit device having a TAB structure is known as a semiconductor device (semiconductor integrated circuit device) that drives a liquid crystal (LCD) display. For example, Nikkei B
Published by Company P “Nikkei Electronics 4 August 22, 1988”
day issue, P157-P170 and “rGa in” January 1990 issue, published by Hitachi, Ltd. Semiconductor Division, P
32 and P33 introduce TAB for LCD drivers. In these documents, since the functional block layout of a semiconductor chip is biased, input terminals are provided on one side of a pair of opposing sides of a rectangular semiconductor chip, and output terminals are placed on the other side. structure is disclosed.

Furthermore, in these documents, in addition to the TAB structure, in the mounting method with the LCD panel, QFP (QuadF
A drive IC with a lat package structure is also introduced.

In addition, in "Electronic Materials J, March 1990 issue, P21-P26," published by Kogyo Kenkyukai, there is a report on T
A structure in which an AB-IC driver is connected to terminal electrodes of a panel using an anisotropic conductive film is shown.

In addition, "Electronic Materials J, January 19B9 issue, pages 57 to 59, published by Kogyo Research Association, describes inner lead bonding and outer lead bonding performed by TAB mounting, that is, gigantic bonding. For the IC chip placed on the bonding stage, the inner leads of the leads provided on the surface of the polyimide film are positioned on the electrodes of the IC chip, and then the inner leads are bonded using a heating tool (bonding tool). The lead and the electrode are connected by applying pressure to the corresponding electrode.After the inner lead bonding is completed, the gap between the inner lead and the IC chip is filled with an insulating resin and the semiconductor integrated circuit device is assembled. This TAB
In many structural semiconductor devices, unnecessary insulating film portions are cut and removed during mounting or the like.

[Problem to be solved by the invention]

T that can be made ultra-thin as a semiconductor device for LCD driving
AB structure is adopted. In such a TAB structure, as shown in FIG. 9, an input terminal 2 is provided on one side of a rectangular semiconductor device (TAB structure semiconductor device W) l.
There is a structure in which the output terminal 3 is arranged on one side on the opposite side. FIG. 9 shows the semiconductor device 1 in a shipping state, and by cutting the insulating film 4 along the dashed line, the semiconductor device 1 having a rectangular structure can be obtained.

A semiconductor device 1 having a TAB structure is provided with an opening 6 in the center of an insulating film 4 for mounting a semiconductor chip 5.
A semiconductor chip 5 is attached to this portion. That is, the main surface of the insulating film 4 is provided with a conductor layer pattern 9 consisting of a plurality of conductor layers 7 that are electrically independent from each other, and the inner end of the conductor layer 7 is connected to the opening. 6, and this protruding portion overlaps with an unillustrated electrode of the semiconductor chip 5, or more precisely, a bump electrode. Further, each conductor layer 7 is routed on the main surface of the insulating film 4 in a desired state, and has a structure in which its outer end extends to the edge of the semiconductor device 1. In the case of this TAB structure semiconductor device, an input conductor layer 11 is provided in the upper region above the semiconductor chip 5 in the figure.
is provided, and the input terminals 2 are arranged near the upper edge. Further, an output conductor layer 12 is provided in the lower region of the semiconductor chip 5, which is the lower side in the figure, and the output terminals 3 are arranged near the lower edge. Furthermore, a desired portion of each conductor layer 7 is covered with an insulating resist (not shown), and an inner end portion of the conductor layer 7 including the semiconductor chip 5 is covered with a covering material 1 made of an insulating resin.
Covered by 3. Note that perforation holes 14 are provided at regular intervals on both sides of the insulating film 4.

However, the inventor has revealed that the semiconductor device 1 having such a TAB structure may cause signal delay or the like. That is, the output terminals 3 are drawn out from three sides of the rectangular semiconductor chip 5. Most of the conductor layer 7 extending from the central side of the three sides extends linearly toward one adjacent side of the semiconductor device 1 that is parallel to the central side. Although the length tends to be shorter, the conductor layer 7 pulled out from the left and right sides (both sides) is bent in the middle in order to maintain a wide gap to prevent short circuits between adjacent conductor layers 7. Since the wiring is carried out in such a manner that the conductor layer 7 is lengthened, the pattern may bulge out from side to side, which may cause a signal delay or the like.

Furthermore, in FIG. 9, since the input terminal 2 is pulled out to the upper side in the figure, and the output terminal 3 is pulled out to the lower side, the length in the vertical (width) direction increases, resulting in an increase in the size of the semiconductor device 1. Note that the width of the insulating film 40 is
For example, it is 35 mm.

An object of the present invention is to provide a T
Another object of the present invention is to provide a semiconductor device with a TAB structure that can be made narrower in width.

The above and other objects and novel features of the present invention include:
It will become clear from the delivery of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in the TAB structure semiconductor device of the present invention,
The semiconductor chip is long and has an output electrode on one long side and an input electrode on the short side, and is configured so that no current flows through the other long sides. The structure is equipped with an auxiliary pad. In addition, in the insulating film on which the semiconductor chip is mounted, an input/output conductor layer is provided corresponding to the input/output electrode, and an electric current is provided corresponding to the auxiliary pad to support the auxiliary pad. A short auxiliary support is provided which is configured to prevent the flow of water. Therefore, when a semiconductor chip is mounted on the insulating film and a desired portion is sealed with a covering, the insulating film is extended for a long time because no terminals are provided on the side opposite to the side where the output terminals are lined up. This results in a shape that does not exist.

[Effect]

According to the above means, in the TAB structure semiconductor device of the present invention, the input terminals are provided at both ends of the semiconductor chip, and the output terminals are provided on one long side of the semiconductor chip. Since each output terminal extends toward one side of the semiconductor device facing each other, the length of each output terminal is shortened, and there is no possibility of causing signal delay or the like. Also,
Since input terminals and output terminals are no longer pulled out on the side opposite to the side where the output terminals are pulled out, the extension length of the insulating film on the side opposite to this side can be shortened, making it possible to obtain a narrow semiconductor device. can.

Further, in this TAB structure semiconductor device, an auxiliary pad having the same structure as the electrode is provided on a side where no electrode is provided on the semiconductor chip, and the insulating film faces the auxiliary pad and provides auxiliary support. Since the body is provided, the bonding tool does not hit each other during inner lead bonding when the semiconductor chip is fixed, the crank does not enter the semiconductor chip, and bonding can be performed accurately and reliably.

[Example] An example of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing the state of inner lead bonding of a TAB structure semiconductor device according to an embodiment of the present invention, and FIG.
The figure is a plan view showing the main parts of the same <TAB structure semiconductor device,
Figure 3 is a cross-sectional view taken along the line ■-■ in Figure 2, Figure 4 is a cross-sectional view with the cross-sectional direction partially changed showing the correlation between the semiconductor chip and the input terminal, and Figure 5 is a TAB structure semiconductor. FIG. 6 is a plan view showing the tape used for assembling the device, FIG. 6 is a perspective view of the semiconductor chip, and FIG. 7 is a plan view showing the mounted state of the TAB structure semiconductor device of the present invention.

The semiconductor device (TAB structure semiconductor device 1) i of this embodiment is assembled into a tape IO, as shown in the plan view of FIG. This tape 10 is composed of an insulating film 4 made of polyimide resin or the like, and is managed by being wound around a reel or the like. Here, only one part of a single TAB structure semiconductor device is shown. The device 1 is substantially a rectangular portion shown by a two-dot chain line, and is formed over a length of 14 mm on a tape 10 having a width of, for example, 70 mm. The pitch of the perforated holes 14 provided on both sides of the tape 10 is 4.75 mm.

As shown in FIGS. 2 to 5, the TAB structure semiconductor device 1 includes an insulating film 4, a plurality of conductor layers 7 (conductor layer patterns 9) formed on the main surface of the insulating film 4, and the insulating film 4. a semiconductor chip 5 fixed to an inner end of the conductor layer 7 facing a rectangular opening 6 formed in a part of the film 4 and having an electrode protruding into the opening 6;
The semiconductor chips 5 are made of an elongated body, and are arranged so that the longitudinal sides of the semiconductor chips 5 extend along the width direction of the tape 10. There is. As shown in FIG.
A square or rectangular output electrode 20 is disposed. Moreover, several to ten or more input electrodes 21 are provided on each short side of the semiconductor chip 5. this person·
The surface portion of the output electrode 21.20 is shown in FIGS. 3 and 4.
As shown in the figure, the bump electrode 22 is made of gold, copper, or solder and has a height of about several tens of μm.

Furthermore, although this is one of the features of the present invention, the other long sides on which the input/output electrodes 21 and 20 are not provided are made of the same structure (material and one dimension) as the output electrodes 20. An auxiliary pad 23 is provided. Note that this auxiliary pad 23 also has a bump electrode 22 on its surface layer. Although not necessarily specified, the auxiliary pad 23 is provided corresponding to the output electrode 20.

This auxiliary band 23 is shown filled in black in FIG.

The tape 10 includes an insulating film 4 with a thickness of 75 to 125 μm, and a plurality of conductor layers 7 (patterned on the main surface of the insulating film 4, made of copper with a thickness of 35 μm and plated with tin or solder on the surface). FIG. 5 shows a tape portion for forming a unit TAB structure semiconductor device 1. The tape shown in FIG. This unit tape 10
A long rectangular opening 6 is provided near the upper side of the center of the upper surface along the width direction of the tape. This opening 6 is a hole having a similar shape that is slightly larger than the semiconductor chip 5, and the semiconductor chip 5 is inserted into the opening 6. Further, the inner end of the conductor layer 7, that is, the inner end of the inner lead, extends so as to slightly protrude into the opening 6, as shown in FIGS. 3 and 4. These inner end portions face and overlap the input/output electrodes 21 and 20 of the semiconductor chip 5. The output conductor layer 12 extends from one long side of the opening 6 toward one side of the TAB structure semiconductor device 1 parallel to this negative side, that is, the lower side in FIG. The output terminals 3 are arranged side by side along the lower side. These output conductor layers 1
2 extends toward the opposing sides, so each length becomes shorter.

On the other hand, the input conductor layer 11 extending from both short sides of the opening 6 extends laterally. The outer ends of these input conductor layers 11 come to straddle rectangular holes 24 provided on both sides of the opening 6, and the outer lead portions that straddle the holes 24 serve as input terminals 2. As shown in FIG. 5, the input conductor layer 11 and the hole 24 are designed not to protrude significantly from the long side of the opening 6 where the input/output conductor layer LL12 is not provided. As a result, the effective length a of the insulating film 4 in the six openings in which the input/output conductor layer 11, 12 extending on the long side where the current-flowing electrode is not provided can be made as short as possible, and the TAB The length of one side of the structural semiconductor device 1, that is, the width W of the TAB structure semiconductor device 1 can be made shorter than in the past.

On the other hand, as shown in FIG. 3, in the green area where the input conductor layer 11 and the output conductor layer 12 of the opening 60 are not provided, the upper green (edge where no electrode is present) in FIG. An auxiliary support body 30 corresponding to the auxiliary pad 23 is provided. This auxiliary support 30 is formed of a conductor layer 7. Further, this auxiliary support 30 is not used by passing an electric current through it, and is necessary to support the auxiliary support 30 whose tip protrudes into the opening 6, as shown in FIG. and extends on the insulating film 4 by a minimum length. As a result, as shown in Fig. 5,
The effective length a of the insulating film portion from the electrode-free edge of the opening 6 to the edge of the TAB structure semiconductor device 1 can be reduced.

Furthermore, in this tape 10, although parts of the conductor layer 7 are omitted in FIG. 5 for clarity, the portions of the conductor layer 7 excluding the areas used for inner lead bonding and outer lead bonding are As shown in FIGS. 2 to 4, it is covered with a resist film 15.

Such a TAB structure semiconductor device 1 is manufactured by fixing the semiconductor chip 5 to the tape 10 shown in FIG.
3 and sealing the semiconductor chip 5 and the portion of the conductor layer 7 facing the semiconductor chip 5 with this covering 13.

The semiconductor chip 5 is fixed (mounted) using a commonly used TAB mounting machine. At this time, as shown in FIG. 1, the semiconductor chip 5 is placed on the bonding stage 31 with the electrodes and auxiliary pads facing upward. Further, a tape 10 shown in FIG. 5 is placed over the semiconductor chip 5. As shown in FIG.

At this time, the input/output electrodes 21.2 of the semiconductor chip 5
0 and the auxiliary pad 23 are connected to the input/output conductor layer 11.1.
2 and the tip of the auxiliary support 30 are positioned so as to overlap with each other. Then, a bonding tool (heating tool) 32 is pressed onto the input/output conductor layer 11.12 and the auxiliary support 30 for which this positioning has been completed, and the input/output electrode 21.20 and the auxiliary pad 23 are bonded to these. The overlapping portions of the corresponding input/output conductor layers 11, 12 and the auxiliary support 30 are fixed to each other by melting or eutectic of the bump electrodes 22. In this inner lead bonding, since a dummy pad (auxiliary pad) and a dummy support body (auxiliary support body) are provided, the bonding tool 32 is free from the uneven contact phenomenon of the bonding tool 32 that occurs when there is no auxiliary pad 23 or the like. The load is no longer generated, and the load is applied equally to the corresponding pair of sides of the semiconductor chip 5. As a result, it is possible to prevent the semiconductor chip 5 from being cracked and damaged due to unbalanced contact.

The inner lead portion and outer lead portion of the conductor layer 7 located in the opening 6 are plated with gold or the like (not shown), and have a structure suitable for inner lead bonding and outer lead bonding.

For example, when the TAB structure semiconductor device 1 is used by being incorporated into a liquid crystal display, it is mounted on a mounting board 35 of a liquid crystal panel as shown in FIG. In this case, the output terminal 3 extending on the main surface of the insulating film 4 and the input terminal 2 extending across the hole 24 of the insulating film 4 are connected to a wiring layer (not shown) of the mounting board 35 by outer lead bonding. are fixed respectively. In the same figure,
For convenience of explanation, a mounting board 35 is placed on the main surface of the insulating film 4.
This shows the state in which they are superimposed.

According to the present invention based on such an embodiment, the following effects can be obtained.

(1) In the TAB structure semiconductor device of the present invention, an output conductor layer extends from the long side of a long semiconductor chip, an input conductor layer extends from the short side of the semiconductor chip, and these conductors Since the layers extend only on the three sides of the semiconductor chip and do not extend long on the negative side, the width of the semiconductor device can be made shorter than before. It will be done.

(2) The TAB structure semiconductor device of the present invention does not have an electrode configured to allow current to flow on one side of the semiconductor chip, but instead has an auxiliary pad having the same structure as the electrode configured to prevent current from flowing. At the same time, an auxiliary support with the same thickness as the input/output conductor layer is provided on the insulating film in correspondence with this auxiliary pad, so when connecting the inner leads by gigantic bonding, , it is possible to obtain the effect that a load is evenly applied to each side of the semiconductor chip.

(3) According to the above (2), according to the present invention, during inner lead bonding, load is applied evenly to each side of the semiconductor chip, and uneven contact does not occur, which prevents cracks from occurring in the semiconductor chip. There was no such thing,
The effect of improving the bonding yield can be obtained.

(4) According to the above (3), according to the present invention, the semiconductor chip does not crack during inner lead bonding, so the reliability of the TAB structure semiconductor device is increased. can get.

(5) According to the above (2), according to the present invention, it is possible to achieve the effect that manufacturing costs can be reduced by improving the yield of inner lead bonding.

(6) In the TAB structure semiconductor device of the present invention, the output conductor layer extends from the long side of the elongated semiconductor chip toward the adjacent side of the TAB structure semiconductor device, and the output conductor layer extends from the short side of the semiconductor chip to the side. Since the input conductor layer extends in the pattern, the length of each output conductor layer can be shortened, and the signal delay can also be reduced.

(7) According to the present invention, since the pattern is such that the output conductor layer extends from the long side of the semiconductor chip and the input conductor layer extends from the short side of the semiconductor chip, intra-chip wiring This has the effect of optimizing the area and making effective use of the tape wiring area.

(8) According to the above (1) to (7), according to the present invention, -
It is possible to provide a TAB structure semiconductor device with an excellent characteristic of reducing side length at a low cost.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. For example, it is also possible to have a structure in which the input/output conductor layer (input/output electrode) is concentrated on one side of the semiconductor chip, and the auxiliary support (auxiliary pad) is placed on the opposite side of this side. , it is possible to reduce the dimensions of a TAB structure semiconductor device in one direction, and during assembly, an auxiliary pad (auxiliary support) is provided on the opposite side of the side on which the electrode is provided, so it is possible to reduce the size of Φ during inner lead bonding. It is possible to prevent collisions and prevent damage to semiconductor chips.

Furthermore, the arrangement pattern of the input/output electrodes (input/output conductor layer) and the auxiliary pad (auxiliary support) is not limited to the above example, and any arrangement may be used as long as no uneven contact occurs during inner lead bonding. It can also be a pattern.

Further, in the present invention, the auxiliary pad has the same size structure as the electrodes, but if the thickness of the auxiliary pad is made thicker than the thickness of the auxiliary support, the auxiliary support can be eliminated, and the above-mentioned implementation You can obtain the same effect as the example.

FIG. 8 shows another example of mounting the TAB structure semiconductor device of the present invention. In this example, the TAB structure semiconductor device 1 is mounted on the back side of the mounting board 35 of the liquid crystal display, and the output terminal 3 is folded back to the top side by the green part of the mounting board 35, and the output terminal 3 is mounted on the top surface (front surface) of the mounting board 35. This is an example in which the side is connected to a wiring layer (not shown). In this way, the mounting board 35 can be used effectively.

In the above description, the invention made by the present inventor has been mainly applied to the technology for manufacturing a driver for a liquid crystal display, which is the background field of application, but the invention is not limited thereto.

The present invention can be applied at least to the manufacture of semiconductor devices having a TAB structure.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

In the TAB structure semiconductor device of the present invention, when an electrode is not provided on the opposite side of the semiconductor chip to the side on which the electrode is provided due to a design in which the functional blocks of the semiconductor chip are unevenly arranged, this electrode is provided. Provide auxiliary pads on the sides where there are no
Since damage to the bonding tool during inner lead bonding can be suppressed, damage to the semiconductor chip can be prevented, and the length of one side of the TAB structure semiconductor device can be shortened.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view showing the inner lead bonding state of a TAB structure semiconductor device according to an embodiment of the present invention, FIG. 2 is a plan view showing the main parts of the same TAB structure semiconductor device, and FIG. Figure 4 is a cross-sectional view showing the relationship between the semiconductor chip and the input terminal, with the cross-sectional direction partially changed, and Figure 5 is a cross-sectional view taken along the line ■-■. FIG. 6 is a perspective view of the semiconductor chip; FIG. 7 is a plan view showing the mounting state of the TAB structure semiconductor device of the present invention; FIG. 8 is another mounting of the TAB structure semiconductor device of the present invention. Plan view showing an example FIG. 9 is a plan view showing main parts of a conventional TAB structure semiconductor device. 1... Semiconductor device (TAB structure semiconductor device), 2...
- Input terminal, 3... Output terminal, 4... Insulating film, 5... Semiconductor chip, 6... Opening, 7... Conductor layer, 9... Conductor layer pattern, lO...・Tape, 1
1... Input conductor layer, 12... Output conductor layer, 13
... Covering body, 14 ... Part ole silane hole, 15
...Resist film, 20...Output electrode, 21...
Input electrode, 22... bump electrode, 23... auxiliary pad, 24... hole, 30... auxiliary support body, 31...
- Bonding stage, 32... Bonding tool, 35... Mounting board. 1-TABnl #4Al 2-People Kai! h child 5-half 4 forest hand φ 20-output 18et meeting 22-
Hive cypress 35- pawn 51 net 3- output terminal 21-for human power [positive 1-14a4iIt, -May Ishit 11-44 for human power 1? -Input terminal ÷ 5-half 4 #chip 7゛12-output! fJ4 rice 1 3-tfJ end 9-444-J pattern 13-a cover 4 pieces

Claims (1)

[Scope of Claims] 1. An insulating film having a conductor layer pattern on its main surface, a semiconductor chip fixed to each conductor layer of the insulating film via an electrode, and a predetermined portion of the semiconductor chip and the insulating film being covered. A semiconductor device consisting of a semiconductor chip and a conductor layer, each of which is configured to allow a current to flow around the semiconductor chip, and each conductor layer extends only from one side or two or three adjacent sides of the semiconductor chip. A semiconductor device characterized by: 2. The extension length of the insulating film on the side of the semiconductor chip where the conductor layer configured to allow the current to flow does not extend is:
2. The semiconductor device according to claim 1, wherein the conductor layer configured to allow current to flow is shorter than the extended length of the insulating film on the side of the semiconductor chip. 3. The semiconductor chip is provided with electrodes along one side or two or three adjacent sides thereof, and at least an auxiliary pad is provided on the side opposite to the side where the electrode is provided and where no electrode is provided. 2. A semiconductor device according to claim 1, further comprising a semiconductor device. 4. The auxiliary pad is at the same height as the electrode, and the auxiliary pad is connected to an auxiliary support provided on the insulating film and configured to prevent current from flowing. 3. The semiconductor device according to item 3. 5. The semiconductor device according to claim 4, wherein the auxiliary pad and the electrode are made of the same material, and the conductor layer and the auxiliary support are made of the same material.