JPH0329169B2 - - Google Patents

Info

Publication number
JPH0329169B2
JPH0329169B2 JP17133184A JP17133184A JPH0329169B2 JP H0329169 B2 JPH0329169 B2 JP H0329169B2 JP 17133184 A JP17133184 A JP 17133184A JP 17133184 A JP17133184 A JP 17133184A JP H0329169 B2 JPH0329169 B2 JP H0329169B2
Authority
JP
Japan
Prior art keywords
molding
wafer
melt
groove
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17133184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149415A (ja
Inventor
Takashi Sawatani
Takashi Yokoyama
Ichiro Hide
Takeyuki Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hokusan Co Ltd
Original Assignee
Hokusan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hokusan Co Ltd filed Critical Hokusan Co Ltd
Priority to JP17133184A priority Critical patent/JPS6149415A/ja
Publication of JPS6149415A publication Critical patent/JPS6149415A/ja
Publication of JPH0329169B2 publication Critical patent/JPH0329169B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
JP17133184A 1984-08-17 1984-08-17 製造皿 Granted JPS6149415A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17133184A JPS6149415A (ja) 1984-08-17 1984-08-17 製造皿

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17133184A JPS6149415A (ja) 1984-08-17 1984-08-17 製造皿

Publications (2)

Publication Number Publication Date
JPS6149415A JPS6149415A (ja) 1986-03-11
JPH0329169B2 true JPH0329169B2 (enrdf_load_html_response) 1991-04-23

Family

ID=15921248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17133184A Granted JPS6149415A (ja) 1984-08-17 1984-08-17 製造皿

Country Status (1)

Country Link
JP (1) JPS6149415A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS6149415A (ja) 1986-03-11

Similar Documents

Publication Publication Date Title
EP0065373B1 (en) Method fabricating a polycrystalline silicon wafer
US5584936A (en) Susceptor for semiconductor wafer processing
US20090117721A1 (en) Vapor phase growth apparatus
JPH0329169B2 (enrdf_load_html_response)
WO2021120189A1 (zh) 一种晶圆承载盘及化学气相淀积设备
JPH02119931A (ja) 生物学的処理用球状充填材
US4468281A (en) Silicon ribbon growth wheel and method for heat flow control therein
JP3206540B2 (ja) シリコンインゴット製造用積層ルツボおよびその製造方法
CN104674341B (zh) 一种多晶铸锭炉及其定向凝固装置、多晶铸锭方法
EP0124284B1 (en) Method of fabricating polycrystalline silicon wafer and fabrication tray used therefor
JPH0314769B2 (enrdf_load_html_response)
JPH0311214Y2 (enrdf_load_html_response)
JPH0322907Y2 (enrdf_load_html_response)
JPH0246048Y2 (enrdf_load_html_response)
US4519764A (en) Apparatus for fabricating polycrystalline silicon wafer
JPH0265122A (ja) 半導体基板支持ボート
US5259441A (en) Apparatus for the production of directionally solidified castings
JPH03228379A (ja) 太陽電池用基板
JPS58162028A (ja) 多結晶シリコンウエハの製造方法
CN222221068U (zh) 一种通用型子蜡结构
JPH0228891B2 (enrdf_load_html_response)
JPS6362332A (ja) 半導体装置の製造装置
CN219357847U (zh) 一种用于型壳高温焙烧的焙烧工装
JP3689717B2 (ja) 単結晶の製造方法及び結晶育成るつぼ
JPS6049066B2 (ja) 中子成形用型の排気構造