JPH0328870B2 - - Google Patents

Info

Publication number
JPH0328870B2
JPH0328870B2 JP58014928A JP1492883A JPH0328870B2 JP H0328870 B2 JPH0328870 B2 JP H0328870B2 JP 58014928 A JP58014928 A JP 58014928A JP 1492883 A JP1492883 A JP 1492883A JP H0328870 B2 JPH0328870 B2 JP H0328870B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
output
switching
conversion elements
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58014928A
Other languages
Japanese (ja)
Other versions
JPS59140766A (en
Inventor
Takashi Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58014928A priority Critical patent/JPS59140766A/en
Publication of JPS59140766A publication Critical patent/JPS59140766A/en
Publication of JPH0328870B2 publication Critical patent/JPH0328870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
    • H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
    • H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
    • H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
    • H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Image Input (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Description

【発明の詳細な説明】 本発明はフアクシミリ等に用いられる原稿読取
装置に関し、特に最近開発が進められている密着
型原稿読取装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a document reading device used in facsimile machines and the like, and particularly to a contact type document reading device which has been recently developed.

一般に、密着型原稿読取装置は、複数個の光電
変換素子（いわゆる光電変換素子アレイ）と該素
子をスイツチング走査する回路から構成されてい
る。この光電変換素子アレイはその長さを原稿幅
と同一サイズとし、オプチカルフアイバアレイあ
るいはレンズアレイ等の光学系を用いて１対１結
像により原稿を読取るようにしたものであり、結
像光路長を短かくすることができるとともに原稿
読取装置の大幅な小型化を可能にするものであ
る。 Generally, a contact type document reading device is composed of a plurality of photoelectric conversion elements (so-called photoelectric conversion element array) and a circuit for switching and scanning the elements. The length of this photoelectric conversion element array is the same as the original width, and the original is read by one-to-one imaging using an optical system such as an optical fiber array or a lens array. This makes it possible to shorten the length of the document reading device and to significantly reduce the size of the document reading device.

第１図は、従来の密着型原稿読取装置の特徴的
な部分を示す平面図であり、同図のＡ−A′線に
沿つた当該原稿読取装置の断面図を第２図に示
す。第１図乃至第２図において、光電変換素子
LE1，LE2，LE3，…，LEnは絶縁性基板１の上
に分割電極DT1，DT2，DT3，…，DTnを形成
し、この電極の一端部に重ねて光導電性薄膜２を
形成し、さらにこの上に透明導電性薄膜３を設け
た積層構造となつている。また、前記分割電極の
他端にはボンデイングワイヤBW1，BW2，BW3，
…，BWnを介して接続されたスイツチング回路
４が配接されている。 FIG. 1 is a plan view showing characteristic parts of a conventional contact type document reading device, and FIG. 2 is a sectional view of the document reading device taken along line A-A' in the same figure. In FIGS. 1 and 2, the photoelectric conversion element
For LE 1 , LE 2 , LE 3 ,..., LEn, divided electrodes DT 1 , DT 2 , DT 3 ,..., DTn are formed on the insulating substrate 1, and a photoconductive thin film is overlaid on one end of the electrodes. 2 is formed, and a transparent conductive thin film 3 is further provided thereon. Furthermore, bonding wires BW 1 , BW 2 , BW 3 ,
..., a switching circuit 4 connected via BWn is connected.

なお、前記光電変換素子LE1，LE2，LE3，…，
LEnにおいて、受光素子としての機能を有する部
分は、各々下側の分割電極DT1，DT2，DT3，
…，DTnと上側の透明導電性薄膜３とが交差す
る領域である。 Note that the photoelectric conversion elements LE 1 , LE 2 , LE 3 ,...,
In LEn, the portions that function as light receiving elements are the lower divided electrodes DT 1 , DT 2 , DT 3 , and
..., the region where DTn intersects with the upper transparent conductive thin film 3.

第３図は第１図乃至第２図に示した原稿読取装
置の回路図である。 FIG. 3 is a circuit diagram of the document reading device shown in FIGS. 1 and 2.

第３図では第１図乃至第２図に示した光電変換
素子LE1，LE2，LE3，…，LEnは等価的に各々
フオトダイオードPD1，PD2，PD3，…，PDnと
コンデンサC1，C2，C3，…，Cnとで表わされる。
この光電変換素子LE1，LE2，LE3，…，LEnは
シフトレジスタSRの制御の下にオン／オフ状態
が切り換えられるMOSトランジスタTR11，
TR12，TR13，…，TR1oおよび各光電変換素子
に共通する共通信号線１０を介して出力端子１１
に接続されている。また、各光電変換素子LE1，
LE2，LE3，…，LEnは該光電変換素子とMOSト
ランジスタの入力容量によつて形成される寄生容
量C1′，C2′，C3′，…，Cn′を有している。さら
に、当該光電変換素子LE1，LE2，LE3，…，
LEnは電源１２によつてバイアスが加わえられて
いる。 In Fig. 3, the photoelectric conversion elements LE 1 , LE 2 , LE 3 , ..., LEn shown in Figs. It is represented by C 1 , C 2 , C 3 ,..., Cn.
The photoelectric conversion elements LE 1 , LE 2 , LE 3 , ..., LEn are MOS transistors TR 11 , whose on/off states are switched under the control of a shift register SR.
Output terminal 11 via common signal line 10 common to TR 12 , TR 13 , ..., TR 1o and each photoelectric conversion element
It is connected to the. In addition, each photoelectric conversion element LE 1 ,
LE 2 , LE 3 , . . . , LEn have parasitic capacitances C 1 ′, C 2 ′, C 3 ′, . Furthermore, the photoelectric conversion elements LE 1 , LE 2 , LE 3 ,...,
LEn is biased by power supply 12.

ここで、上述した原稿読取装置の動作について
説明すると、まず、原稿像が光電変換素子LE1上
に結像されると、光強度に対応した光電流がフオ
トダイオードPD1に流れ、それに応じて寄生容量
C1′に信号電荷が蓄積される。次に、シフトレジ
スタSRの制御の下にMOSトランジスタTR11を
適宜の時間オン状態とすることにより、寄生容量
C1′に蓄積された信号電荷は信号線１０を介し負
荷抵抗１３を通して放電されて、出力端子１１か
ら読出される。以下同様にして順次光電変換素子
LE2，LE3，…，LEnによつて原稿像を読出す。 Here, to explain the operation of the above-mentioned document reading device, first, when the document image is formed on the photoelectric conversion element LE 1 , a photocurrent corresponding to the light intensity flows to the photodiode PD 1 , and the photocurrent is converted accordingly. parasitic capacitance
Signal charge is accumulated in C 1 ′. Next, by keeping the MOS transistor TR11 on for an appropriate time under the control of the shift register SR, the parasitic capacitance is reduced.
The signal charge accumulated in C 1 ' is discharged through the load resistor 13 via the signal line 10 and read out from the output terminal 11. In the same manner, the photoelectric conversion elements are sequentially
The original image is read by LE 2 , LE 3 , ..., LEn.

ところで、上述した原稿読取装置は、例えば、
光電変換素子は８ドツト／mmの密度で210mm（日
本工業規格Ａ列４番の用紙幅）前後にわたつて並
設されており、シフトレジスタSRを駆動するた
めのクロツクパルスによつて生じる雑音あるいは
MOSトランジスタTR11，TR12，TR13，…，
TR1oのオン／オフ動作時にゲートから混入する
雑音が信号線１０に誘起され電荷信号の信号対雑
音比（Ｓ／Ｎ比）を著しく劣化させるという問題
があつた。 By the way, the above-mentioned document reading device, for example,
The photoelectric conversion elements are arranged in parallel at a density of 8 dots/mm over a length of 210 mm (Japanese Industrial Standards A row No. 4 paper width), and are designed to eliminate noise caused by clock pulses for driving the shift register SR.
MOS transistors TR 11 , TR 12 , TR 13 ,...,
There has been a problem in that noise introduced from the gate during the on/off operation of the TR 1o is induced in the signal line 10, significantly degrading the signal-to-noise ratio (S/N ratio) of the charge signal.

また、信号電荷を読出す時に放電されずに残つ
た信号電荷の一部は、雑音の原因となるととも
に、当該装置の動作を遅延させるという問題があ
つた。 Further, there is a problem in that a portion of the signal charges remaining without being discharged when reading the signal charges causes noise and delays the operation of the device.

本発明は上記実情に鑑みてなされたもので、出
力信号のＳ／Ｎ比の劣化を防ぐとともに、高速に
動作する原稿読取装置を提供することを目的とす
る。 The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a document reading device that prevents deterioration of the S/N ratio of an output signal and operates at high speed.

そこで本発明では、複数の光電変換素子の各々
に対して、第１の制御線からの制御信号に応じて
前記光電変換素子に対する充放電を制御する第１
のスイツチング素子と、駆動電源に並列に接続さ
れ、前記光電変換素子の出力線が制御側に接続さ
れ当該各光電変換素子に蓄積された電荷量に応じ
て出力を増幅する増幅素子と、電圧読出し用の抵
抗素子とが直列に接続されたバツフアアンプと、
前記増幅素子と前記抵抗素子との接続点からの出
力線に接続され、第２の制御線からの制御信号に
応じて前記出力線に出力される電圧出力の読出し
を制御する第２のスイツチング素子とを配設し、
さらに、各光電変換素子のうちの一つの光電変換
素子に対応する第１のスイツチング素子を制御す
る第１の制御線を、その光電変換素子以外の光電
変換素子に対応する第２のスイツチング素子を制
御する第２の制御線に共通に接続して、読取りの
対象となつている光電変換素子に対応する第２の
スイツチング素子をオン状態にして、その光電変
換素子に蓄積した電荷をバツフアアンプを通して
電圧に変換し、その変換された電圧を読み出すと
同時に、既に読出しの終わつた他の（前段の）光
電変換素子に対応する第１のスイツチング素子を
オン状態にすることによつて、当該読出しの終わ
つた他の光電変換素子の寄生容量の一つに蓄積さ
れている雑音電荷を放電させ、当該光電変換素子
を初期状態にすることにより、動作時の駆動ノイ
ズを除去して、出力信号とノイズの比（Ｓ／Ｎ
比）の劣化を防ぐとともに、高速な読取り動作を
可能とする。 Therefore, in the present invention, for each of the plurality of photoelectric conversion elements, a first
a switching element, an amplifying element connected in parallel to a drive power source, an output line of the photoelectric conversion element being connected to a control side and amplifying the output according to the amount of charge accumulated in each photoelectric conversion element, and a voltage readout. a buffer amplifier connected in series with a resistive element for
a second switching element connected to an output line from a connection point between the amplification element and the resistance element, and controlling readout of the voltage output output to the output line in response to a control signal from a second control line; and,
Furthermore, a first control line for controlling a first switching element corresponding to one of the photoelectric conversion elements is connected to a second switching element corresponding to a photoelectric conversion element other than the photoelectric conversion element. A second switching element is commonly connected to the second control line to be controlled, and a second switching element corresponding to the photoelectric conversion element to be read is turned on, and the electric charge accumulated in the photoelectric conversion element is converted into a voltage through a buffer amplifier. At the same time as the converted voltage is read out, the first switching element corresponding to the other (previous stage) photoelectric conversion element that has already finished reading is turned on, thereby ending the reading. By discharging the noise charge accumulated in one of the parasitic capacitances of other photoelectric conversion elements and returning the photoelectric conversion element to its initial state, driving noise during operation is removed, and the output signal and noise are Ratio (S/N
This prevents deterioration of the ratio) and enables high-speed reading operations.

以下、本発明の一実施例を添付図面を参照して
詳細に説明する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings.

第４図は本発明に係る原稿読取装置の回路図を
示すもので、第３図と同様の機能を果たす部分に
ついては同一の符号を用いている。 FIG. 4 shows a circuit diagram of a document reading device according to the present invention, and the same reference numerals are used for parts that perform the same functions as those in FIG. 3.

電荷蓄積型光電変換素子としての各光電変換素
子LE1，LE2，LE3，…，LEnはその一方は共通
に結線されて電源１２に接続されており、他方は
シフトレジスタSRの適宜の制御の下にオン／オ
フ状態が切り換わる第１のスイツチング素子とし
てのMOSトランジスタTR21，TR22，TR23，…，
TR2oを介して接地されている。また当該光電変
換素子LE1，LE2，LE3，…，LEnに蓄積された
光強度に対応する信号電荷は前記したMOSトラ
ンジスタTR21，TR22，TR23，…，TR2oに後述
するように結線された第２のスイツチング素子と
してのMOSトランジスタTR31，TR32，TR33，
…，TR3oをON状態にしたときに、抵抗素子Ｒ１
と増幅素子TR４１とが直列に接続されたバツフ
アアンプBA１、抵抗素子Ｒ２と増幅素子TR４
２が直列に接続されたバツフアアンプBA２、抵
抗素子Ｒ３と増幅素子TR４３とが直列に接続さ
れたバツフアアンプBA３、…、抵抗素子Rnと増
幅素子TR４ｎとが直列に接続されたバツフアア
ンプBAnによつて電圧として信号線１０を介し
て出力端子１１から読出される。 One of the photoelectric conversion elements LE 1 , LE 2 , LE 3 , ..., LEn as a charge storage type photoelectric conversion element is commonly connected to the power supply 12, and the other is connected to the appropriate control of the shift register SR. MOS transistors TR 21 , TR 22 , TR 23 ,..., as first switching elements whose on/off state is switched under
Grounded via TR 2o . Further, signal charges corresponding to the light intensity accumulated in the photoelectric conversion elements LE 1 , LE 2 , LE 3 , ..., LEn are transferred to the MOS transistors TR 21 , TR 22 , TR 23 , ..., TR 2o as described later. MOS transistors TR 31 , TR 32 , TR 33 , as second switching elements connected to
…, when TR 3o is turned on, resistance element R1
Buffer amplifier BA1, resistance element R2, and amplification element TR4 are connected in series with amplification element TR41.
2 are connected in series, buffer amplifier BA3 is connected in series with resistance element R3 and amplification element TR43, ..., buffer amplifier BAn is connected in series with resistance element Rn and amplification element TR4n. It is read out from the output terminal 11 via the signal line 10.

なお、上記各バツフアアンプBA１〜BAnの抵
抗素子と増幅素子との接続点からの出力線ｌ１〜
lnは、第４図に示すように、それぞれ対応する
MOSトランジスタTR３１〜TR３ｎに接続され
ている。また上記各バツフアアンプBA１〜BAn
は、それぞれ抵抗素子を介して駆動電源（−VD
に並列に接続されている。 In addition, the output line l1~ from the connection point between the resistance element and the amplification element of each of the above buffer amplifiers BA1~BAn
ln corresponds to each as shown in Figure 4.
It is connected to MOS transistors TR31 to TR3n. In addition, each of the buffer amplifiers BA1 to BAn listed above
are connected to the drive power supply (−VD
are connected in parallel.

MOSトランジスタTR３１〜TR３ｎのそれぞ
れの制御側（ゲート端子）は、それぞれ第２の制
御線Ｌ１２，Ｌ２２，Ｌ３２，…Ln２を介して
シフトレジスタSRに接続されている。その第２
の制御線Ｌ１２，Ｌ２２，Ｌ３２，…Ln２には、
第４図に示すように、MOSトランジスタTR２１
とTR３２、TR２２とTR３３、…，TR２ｎと
TR３１とが結線されるように、MOSトランジス
タTR２１〜TR２ｎの制御側（ゲート端子）に
それぞれ一端が接続された第１の制御線Ｌ１１，
Ｌ２１、…，Ln１の他端が接続されている。 The control side (gate terminal) of each of the MOS transistors TR31 to TR3n is connected to the shift register SR via second control lines L12, L22, L32, . . . Ln2, respectively. The second
The control lines L12, L22, L32,...Ln2 of
As shown in Figure 4, MOS transistor TR21
and TR32, TR22 and TR33, ..., TR2n and
A first control line L11, one end of which is connected to the control side (gate terminal) of each of the MOS transistors TR21 to TR2n so as to be connected to TR31.
The other ends of L21, . . . , Ln1 are connected.

次に、本実施例による原稿読取装置の動作につ
いて説明する。 Next, the operation of the document reading device according to this embodiment will be explained.

まず、MOSトランジスタTR21を適宜の時間オ
ン状態として、光電変換素子LE1に電源１２によ
つてバイアス電圧−VBを印加する。このとき、
Ａ点の電位は零となる。次に、MOSトランジス
タTR21をオフ状態として、原稿像を光電変換素
子LE1上に結像すると光強度に対応した光電流IL
が矢印Ｌ方向に流れるので、Ａ点の電位は負方向
に変化する。一定時間経過後、MOSトランジス
タTR31を適宜の時間オン状態とすると、寄生容
量C1′に蓄積された信号電荷はバツフアアンプ
BA1によつて電圧として出力端子１１から取り出
される。 First, the MOS transistor TR 21 is turned on for an appropriate period of time, and a bias voltage -V B is applied to the photoelectric conversion element LE 1 by the power supply 12. At this time,
The potential at point A becomes zero. Next, when the MOS transistor TR 21 is turned off and the original image is focused on the photoelectric conversion element LE 1 , a photocurrent I L corresponding to the light intensity is generated.
flows in the direction of arrow L, so the potential at point A changes in the negative direction. After a certain period of time has elapsed, when the MOS transistor TR 31 is turned on for an appropriate period of time, the signal charge accumulated in the parasitic capacitance C 1 ' is transferred to the buffer amplifier.
It is taken out from the output terminal 11 as a voltage by BA 1 .

以下同様にして、光電変換素子LE2，LE3，…，
LEnによつて原稿像を電圧として読み出す。 Similarly, photoelectric conversion elements LE 2 , LE 3 ,...,
The original image is read out as a voltage using LEn.

なお、MOSトランジスタTR21，TR22，TR23，
…，TR2o乃至TR31，TR32，TR33，…，TR3oは
第４図に示すように、MOSトランジスタTR21と
TR32，TR22とTR33，…，TR2oとTR31というよ
うに結線されているので、例えば、MOSトラン
ジスタTR32をオン状態にして、光電変換素子
LE2の寄生容量C2′に蓄積された信号電荷に対応
する電圧を出力するときには、既に出力が終わつ
ている光電変換素子LE1のMOSトランジスタ
TR21もオン状態となり、寄生容量C1′の信号電荷
を放電し、かつ光電変換素子LE1にはバイアス電
圧−VBが印加されて初期状態になる。 In addition, the MOS transistors TR 21 , TR 22 , TR 23 ,
..., TR 2o to TR 31 , TR 32 , TR 33 , ..., TR 3o are connected to the MOS transistor TR 21 as shown in FIG.
Since the wires are connected like TR 32 , TR 22 and TR 33 ,..., TR 2o and TR 31 , for example, by turning on the MOS transistor TR 32 , the photoelectric conversion element
When outputting the voltage corresponding to the signal charge accumulated in the parasitic capacitance C 2 ' of LE 2 , the MOS transistor of photoelectric conversion element LE 1 , which has already finished outputting,
TR 21 is also turned on, discharging the signal charge of the parasitic capacitance C 1 ', and bias voltage -V B is applied to the photoelectric conversion element LE 1 to bring it into the initial state.

また、MOSトランジスタTR21，TR22，TR23，
…，TR2o乃至TR31，TR33，…，TR3oがオン状
態となつている時間は十分にバイアス電圧が印加
されるのに必要な時間、あるいは光電変換素子
EL1，EL2，EL3，…，ELnに蓄積された信号電
荷が放電されるのに必要な時間である。 In addition, MOS transistors TR 21 , TR 22 , TR 23 ,
…, TR 2o to TR 31 , TR 33 , …, TR 3o are in the ON state for a sufficient period of time to apply a bias voltage or for the photoelectric conversion element to be in the ON state.
This is the time required for the signal charges accumulated in EL 1 , EL 2 , EL 3 , ..., ELn to be discharged.

また、第４図に示した原稿読取装置は、同一基
板上に薄膜により形成される光電変換素子と、
ICにより形成されるスイツチング回路を、一体
で実装するために小型に実現することが可能であ
る。また、上記スイツチング回路はICでなく薄
膜により形成した、いわゆる薄膜トランジスタに
より構成すれば、さらに小型化が可能である。 The document reading device shown in FIG. 4 also includes a photoelectric conversion element formed of a thin film on the same substrate,
A switching circuit formed by an IC can be realized in a small size because it is integrated and mounted. Further, the switching circuit can be further miniaturized if it is constructed from a so-called thin film transistor formed of a thin film instead of an IC.

以上、説明したように本発明によれば信号電荷
を電荷として出力せず電圧として出力することに
より、増幅器としては従来のような高速の電流電
圧変換増幅器を必要とせず、低価格の増幅器が可
能となり、又MOSトランジスタのオン・オフに
よるスパイル雑音の影響を受けずに、高速に動作
する原稿読取装置を得ることができる。 As explained above, according to the present invention, by outputting signal charges not as charges but as voltages, there is no need for a conventional high-speed current-voltage conversion amplifier as an amplifier, making it possible to create a low-cost amplifier. Therefore, it is possible to obtain a document reading device that operates at high speed without being affected by spill noise due to on/off of MOS transistors.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の密着型原稿読取装置の平面図、
第２図は第１図のＡ−A′線に沿つた断面図、第
３図は従来の密着型原稿読取装置の回路図、第４
図は本発明に係る原稿読取装置の回路図を示す。 １……絶縁性基板、２……光導電性薄膜、３…
…透明導電性薄膜、４……スイツチング回路、１
０……信号線、１１……出力端子、１２……電
源、１３……負荷抵抗、TR２１〜TR２ｎ、TR
３１〜TR３ｎ……MOSトランジスタ、TR４１
〜TR４ｎ……増幅素子、Ｒ１〜Rn……抵抗素
子、Ｌ１１〜Ln１……第１の制御線、Ｌ１２〜
Ln２……第２の制御線、ｌ１〜ln……出力線、−
VD……駆動電源。 Figure 1 is a plan view of a conventional contact type document reading device.
Figure 2 is a sectional view taken along the line A-A' in Figure 1, Figure 3 is a circuit diagram of a conventional contact type document reader, and Figure 4 is a cross-sectional view taken along line A-A' in Figure 1.
The figure shows a circuit diagram of a document reading device according to the present invention. 1... Insulating substrate, 2... Photoconductive thin film, 3...
...Transparent conductive thin film, 4...Switching circuit, 1
0...Signal line, 11...Output terminal, 12...Power supply, 13...Load resistance, TR21 to TR2n, TR
31~TR3n...MOS transistor, TR41
~TR4n...Amplification element, R1~Rn...Resistance element, L11~Ln1...First control line, L12~
Ln2...Second control line, l1~ln...Output line, -
VD...Drive power supply.

Claims (1)

【特許請求の範囲】 １ 複数の電荷蓄積型光電変換素子が設けられた
原稿読取装置において、 第１の制御線からの制御信号に応じて前記光電
変換素子に対する充放電を制御する第１のスイツ
チング素子と、 駆動電源に並列に接続され、前記光電変換素子
の出力線が制御側に接続され当該各光電変換素子
に蓄積された電荷量に応じて出力を増幅する増幅
素子と、電圧読出し用の抵抗素子とが直列に接続
されたバツフアアンプと、 前記増幅素子と前記抵抗素子との接続点からの
出力線に接続され、第２の制御線からの制御信号
に応じて前記出力線に出力される電圧出力の読出
しを制御する第２のスイツチング素子と を前記各光電変換素子毎に設け、そのうちの一つ
の光電変換素子に対応する第１のスイツチング素
子を制御する第１の制御線を、その光電変換素子
以外の光電変換素子に対応する第２のスイツチン
グ素子を制御する第２の制御線に共通に接続した
ことを特徴とする原稿読取装置。[Scope of Claims] 1. In a document reading device provided with a plurality of charge storage type photoelectric conversion elements, a first switching device that controls charging and discharging of the photoelectric conversion elements according to a control signal from a first control line. an amplifying element connected in parallel to a drive power source, an output line of the photoelectric conversion element being connected to a control side and amplifying the output according to the amount of charge accumulated in each photoelectric conversion element, and an amplification element for voltage reading. a buffer amplifier in which a resistance element is connected in series; and a buffer amplifier connected to an output line from a connection point between the amplification element and the resistance element, and output to the output line in response to a control signal from a second control line. A second switching element for controlling readout of the voltage output is provided for each of the photoelectric conversion elements, and a first control line for controlling the first switching element corresponding to one of the photoelectric conversion elements is connected to the photoelectric conversion element. A document reading device characterized in that the first switching element is commonly connected to a second control line that controls second switching elements corresponding to photoelectric conversion elements other than the conversion element.
JP58014928A 1983-02-01 1983-02-01 Original reader Granted JPS59140766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58014928A JPS59140766A (en) 1983-02-01 1983-02-01 Original reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014928A JPS59140766A (en) 1983-02-01 1983-02-01 Original reader

Publications (2)

Publication Number Publication Date
JPS59140766A JPS59140766A (en) 1984-08-13
JPH0328870B2 true JPH0328870B2 (en) 1991-04-22

Family

ID=11874623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014928A Granted JPS59140766A (en) 1983-02-01 1983-02-01 Original reader

Country Status (1)

Country Link
JP (1) JPS59140766A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795829B2 (en) * 1988-07-26 1995-10-11 株式会社東芝 Solid-state imaging device
US5262870A (en) * 1989-02-10 1993-11-16 Canon Kabushiki Kaisha Image sensor in which reading and resetting are simultaneously performed
DE69009787T2 (en) * 1989-02-10 1994-11-10 Canon Kk Image sensor and photoelectric conversion device for using the same.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186255A (en) * 1982-04-23 1983-10-31 Toshiba Corp Picture reader

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186255A (en) * 1982-04-23 1983-10-31 Toshiba Corp Picture reader

Also Published As

Publication number Publication date
JPS59140766A (en) 1984-08-13

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