JPH03288433A - Method of removing contaminated materials - Google Patents
Method of removing contaminated materialsInfo
- Publication number
- JPH03288433A JPH03288433A JP8822090A JP8822090A JPH03288433A JP H03288433 A JPH03288433 A JP H03288433A JP 8822090 A JP8822090 A JP 8822090A JP 8822090 A JP8822090 A JP 8822090A JP H03288433 A JPH03288433 A JP H03288433A
- Authority
- JP
- Japan
- Prior art keywords
- container
- contaminants
- extractant
- electronic component
- electronic parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 title abstract description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000000356 contaminant Substances 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 abstract description 14
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000003344 environmental pollutant Substances 0.000 description 5
- 231100000719 pollutant Toxicity 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- VSHBTVRLYANFBK-UHFFFAOYSA-N ozone sulfuric acid Chemical compound [O-][O+]=O.OS(O)(=O)=O VSHBTVRLYANFBK-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子部品に付着した汚染物質の除去方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for removing contaminants attached to electronic components.
半導体ウェハおよび電子管用電極等の電子部品は、その
表面に付着した汚染物質によって、電子部品それ自体の
性能を低下させるだけでたく、これら電子部品を組み込
んだ装置の性能を低下させる恐れがある。Contaminants adhering to the surfaces of electronic components such as semiconductor wafers and electrodes for electron tubes not only deteriorate the performance of the electronic components themselves, but also the performance of devices incorporating these electronic components.
半導体ウェハは、ウェハ０．１＃〜７．９ｆ 当り、１
×１０″″を以上の汚染物質が付着すると、耐電圧特性
、その他電気特性が低下し、製造された半導体の電気的
性能か低下するとされている。Semiconductor wafer: 1 per wafer 0.1# to 7.9f
It is said that if a contaminant of x10'' or more adheres, the withstand voltage characteristics and other electrical characteristics will deteriorate, and the electrical performance of the manufactured semiconductor will also deteriorate.
上記半導体ウェハの汚染物質は、その製造工程で、ホト
レジストの除去にオゾン硫酸（Ｏｓ −ＨｔＳＯ，）等
を、またライト酸化膜の除去に燐＊ （Ｈ。The contaminants of the semiconductor wafers mentioned above are removed during the manufacturing process by using ozone sulfuric acid (Os-HtSO,) to remove photoresist, and by using phosphorus* (H) to remove light oxide films.
ＰＯ２）等を使用して洗浄する方法が行われているが、
洗浄後に上記ウェハに硫酸イオン（ＳＯ４−”）や燐酸
イオン（ＰＯ，−ｌ）等が僅かに残留する。これらイオ
ンが汚染物質としてウェハ上に残り、その量が一定量を
越えると、半導体ウエノ・自体およびこれにより製造さ
れた半導体の電気的性能が著しく低下するとされている
。There are cleaning methods using water such as PO2), but
After cleaning, a small amount of sulfate ions (SO4-''), phosphate ions (PO,-l), etc. remain on the wafer.These ions remain on the wafer as contaminants, and if their amount exceeds a certain amount, the semiconductor wafer・It is said that the electrical performance of itself and the semiconductors manufactured using it are significantly reduced.
また、１子管に使用する金属部品例えば、電子銃の電極
は、トリクレン、トリエタン、アルコール等の溶剤を使
用して洗浄する方法が行われているが、プレス工程で付
着したプレス油、防錆油等の油剤や、上記溶剤等り汚染
物質が微ｉＫ残留し、熱処理を行っても、これら汚染物
質を完全に除去することができない。In addition, metal parts used in single tubes, such as electron gun electrodes, are cleaned using solvents such as trichloride, triethane, and alcohol; A small amount of contaminants such as oil and other oils and the above-mentioned solvents remain, and even if heat treatment is performed, these contaminants cannot be completely removed.
このような電極をそのま匁プ２ウン管に組み込んで使用
すると残留油剤や溶剤に含まれる塩素、硫黄等の元素が
ブラウン管の他の部材、例えばシャドウマスク、インナ
ーシールド、等に含有する残存有機物質、カーボン等か
ら放出するガスの成分と作用し、管内に異常放電を発生
させ、また、電子銃特性を劣化させる等の問題が発生す
る。If such electrodes are used as-is in a momme tube, elements such as chlorine and sulfur contained in residual oils and solvents may be removed from residual organic materials contained in other parts of the cathode ray tube, such as the shadow mask, inner shield, etc. It interacts with gas components emitted from substances such as carbon, causing abnormal discharge within the tube and causing problems such as deterioration of electron gun characteristics.
そこで、製造された半導体ウェハまたは電子管用金属部
材等の電子部品を適時にサンプリングして、それらに付
着した汚染物質の成分、量を高精度に測定し、その測定
結果に基づいて、上記電子部品の製造に対する必要な処
置を講じることが要請されている。Therefore, manufactured semiconductor wafers or electronic components such as metal parts for electron tubes are sampled in a timely manner, the components and amounts of contaminants attached to them are measured with high precision, and based on the measurement results, the electronic components are It is requested that necessary measures be taken for the production of
そのため、上記電子部品に付着した汚染物質を抽出剤を
使用して抽出、除去し、抽出された汚染物質の成分、量
を各種計測装置を用いて計測し、電子部品の汚染物質を
検定することが行われている。Therefore, the contaminants attached to the electronic components are extracted and removed using an extractant, the components and amounts of the extracted contaminants are measured using various measuring devices, and the contaminants on the electronic components are verified. is being carried out.
第４図は、電子部品１から汚染物質を抽出、除去する方
法の説明図である。同図において、１は前記の電子部品
で、これを容器２の抽出剤３の中に浸漬し、８０℃乃至
９０％程度の温度で約１時間加熱する。FIG. 4 is an explanatory diagram of a method for extracting and removing contaminants from the electronic component 1. In the figure, 1 is the electronic component described above, which is immersed in the extractant 3 in a container 2 and heated at a temperature of about 80° C. to 90% for about 1 hour.
抽出剤３として、電子部品１が半導体ウェハの場合には
醗または純水等が、金属部品の場合には四塩化炭素等か
使用されている。As the extractant 3, alcohol or pure water is used when the electronic component 1 is a semiconductor wafer, and carbon tetrachloride or the like is used when the electronic component 1 is a metal component.
このよう７．（方法によって、電子部品ＩＫ付着されて
いる汚染物質は、抽出剤３によって抽出、除去される。Like this 7. (According to the method, the contaminants attached to the electronic component IK are extracted and removed by the extractant 3.
以上述べた従来の汚染物質の除去方法によると、汚染物
質の除去率（付着した汚染物質が除去された割合）は８
０乃至９５％程度であり、高性能の半導体を製造する場
合には、この程度の除去率では半導体ウェハに付着した
汚染物袈の十分な検定を行うことができず、従って、高
品質の半導体を製造するには上記除去率の一段の向上が
必要とされている。According to the conventional pollutant removal method described above, the pollutant removal rate (rate of removed pollutants) is 8.
The removal rate is about 0 to 95%, and when manufacturing high-performance semiconductors, this level of removal rate cannot sufficiently inspect the contaminants attached to semiconductor wafers. Further improvement of the above-mentioned removal rate is required for manufacturing.
また、プ２ウン管、特に、高精細カラーブラウン管を製
造する場合には、管内の眞空度の低下による性能の劣化
が問題であり、電子銃の電極に付着する汚染物質の検定
を行うには汚染物質の除去率を更に向上させることが要
請され、上記従来程度の除去率では高品質の高精細カラ
ーブラウン管の製造には不満足々レベルとされていた。In addition, when manufacturing electron beam tubes, especially high-definition color cathode ray tubes, there is a problem of deterioration of performance due to a decrease in the degree of vacuum inside the tube. There is a need to further improve the removal rate of contaminants, and the conventional removal rate is considered to be at an unsatisfactory level for manufacturing high-quality, high-definition color cathode ray tubes.
本発明の目的は、電子部品に付着した汚染物質を高い除
去率で除去できる汚染物質の除去方法を提供することに
ある。An object of the present invention is to provide a method for removing contaminants that can remove contaminants attached to electronic components with a high removal rate.
上記の目的は、電子部品會ポリテトラフルオロエチレン
製の容器に抽出剤と共に封入し、上記容器を８０℃以上
の温度で加熱して汚染物質を抽出、除去させることによ
って達成される。The above object is achieved by sealing an electronic component in a container made of polytetrafluoroethylene together with an extracting agent, and heating the container at a temperature of 80° C. or higher to extract and remove contaminants.
上記容器は高い耐熟性、耐薬品性を有するので、高温に
加熱することかでき、従って、電子部品の汚染物質を高
い除去率で抽出、除去することができる。また、電子部
品が外部から遮断されるので、外部から汚染物質が侵入
することがｆＬい。Since the container has high aging resistance and chemical resistance, it can be heated to high temperatures, and therefore, contaminants from electronic components can be extracted and removed at a high removal rate. Furthermore, since the electronic components are isolated from the outside, it is difficult for contaminants to enter from the outside.
以下、本発明の一実施例を第１図乃至第３図により説明
する。An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.
第１図に示すように、まず、前記物質で汚染された半導
体ウェハまたは電子管用金属部品等の電子部品１を抽出
剤３と共にポリテトラフルオロエチレン（以下、テフロ
ンという）製の容器４に入れ、その封入口４ａを封止す
る。電子部品１が小量Ｖ場合には、テフロン製の袋を容
器４として使用し、その封入口４ａを電熱体で挟持し、
加熱圧着して封止する。As shown in FIG. 1, first, an electronic component 1 such as a semiconductor wafer or a metal component for an electron tube contaminated with the substance is placed in a container 4 made of polytetrafluoroethylene (hereinafter referred to as Teflon) together with an extractant 3. The sealing port 4a is sealed. When the electronic component 1 is in a small quantity V, a Teflon bag is used as the container 4, and its filling opening 4a is held between electric heating elements.
Heat and press to seal.
次に、上記により封止した容器４を８０℃以上の高温下
で約１時間加熱し、上記電子部品ＩＫ付着した汚染物質
を抽出剤３に抽出、除去させる。Next, the container 4 sealed as described above is heated at a high temperature of 80° C. or higher for about 1 hour to allow the extractant 3 to extract and remove the contaminants adhering to the electronic component IK.
電子部品ｌが半導体ウェハの場合には、抽出剤３として
酸または純水等を、また電子部品１が金属部品の場合に
は、抽出剤３として四塩化炭素等が使用される。When the electronic component 1 is a semiconductor wafer, acid or pure water is used as the extractant 3, and when the electronic component 1 is a metal component, carbon tetrachloride or the like is used as the extractant 3.
このよう々方法で行うと、電子部品１は外気から完全に
遮断されるので、外部から汚染物質が侵入する恐れがな
く、また、容器４が高い耐熱性、耐薬品性を有し、高温
加熱が可能になるので、汚染物質を高い除去率で抽出、
除去することができる。実験結果によると、汚染物質の
除去率は、最高９９乃至９９．５％まで達成できること
が確認された。By using this method, the electronic component 1 is completely isolated from the outside air, so there is no risk of contaminants entering from the outside.In addition, the container 4 has high heat resistance and chemical resistance, and is heated to high temperatures. This makes it possible to extract pollutants with a high removal rate.
Can be removed. According to the experimental results, it was confirmed that the removal rate of pollutants can be achieved up to 99 to 99.5%.
上記加熱温度は、８０℃以下の温度で行うと抽出能力が
低下し、９０℃以上の温度で行うと抽出能力は余り増加
しない一方、電子部品が変質する場合があるので注意し
て行う必要がある。Regarding the heating temperature mentioned above, if the heating temperature is below 80℃, the extraction capacity will decrease, and if the heating temperature is above 90℃, the extraction capacity will not increase much, but the electronic parts may change in quality, so it must be done with care. be.
第２図は、本発明の他の実施例の説明図である。FIG. 2 is an explanatory diagram of another embodiment of the present invention.
この実施例は、容器４０内ｓＫバリヤー（障壁）４ｂを
圧着して設げ、容器４の底部に抽ｄ剤３を貯留させ、電
子部品１を抽出剤３と離間するようバリヤー４ｂＫ懸架
させて抽出を行うようにしたものである。バリヤー４ｂ
は、第２図（ム）、（ＩＩ）Ｋ示すように、容器４と電
子部品１の形状に応じて適宜の形状に形成すればよい。In this embodiment, an sK barrier (barrier) 4b is provided in a container 40 by pressure bonding, an extractant 3 is stored at the bottom of the container 4, and the barrier 4bK is suspended so that the electronic component 1 is separated from the extractant 3. It is designed to perform extraction. barrier 4b
may be formed into an appropriate shape depending on the shape of the container 4 and the electronic component 1, as shown in FIGS. 2(M) and 2(II)K.
上記したように、容器４の内部にバリヤー４ｂを設ける
ことによって、抽出剤３が加熱されて蒸気となり、この
蒸気が上昇して電子部品ＩＫ触れて抽出作用（以下、蒸
気抽出という）を行い、電子部品１に付着した汚染物質
を吸着、除去して下方に流れ、以下、順次この作用を繰
り返す。As described above, by providing the barrier 4b inside the container 4, the extractant 3 is heated and becomes steam, and this steam rises and touches the electronic component IK to perform an extraction action (hereinafter referred to as steam extraction). The contaminants adhering to the electronic component 1 are adsorbed and removed, flowing downward, and this action is repeated successively thereafter.
こりような方法で、電子部品１を蒸気抽出すると、電子
Ｅ品１は、抽出剤３の液体に浸漬されず、かつ汚染物質
が極めて少々い抽出剤の蒸気によって抽出作用が行われ
るので、抽出能力の劣化がなく、高い除去率で電子部品
１の汚染物質を除去することができる。When the electronic component 1 is extracted with steam in this manner, the electronic component 1 is not immersed in the liquid of the extractant 3, and the extraction action is performed by the vapor of the extractant, which contains very few contaminants. Contaminants from the electronic component 1 can be removed at a high removal rate without deterioration of performance.
また、少量の抽出剤の使用で足りるので、抽出完了後の
抽出剤に含まれる汚染物質の濃度が高くなる。従って、
汚染物質を検定する計測の感度が向上する。Also, because only a small amount of extractant is required, the concentration of contaminants in the extractant after the extraction is complete is high. Therefore,
The sensitivity of measurements for testing contaminants is improved.
ｓ１！３図は、抽出処理を行った後の抽出剤３ａを抽出
剤３と分離して貯留できるようにしたもので、抽出剤３
は加熱され、蒸気となって上昇し、電子部品ＩＫｇ触し
て、これを蒸気抽出し、汚染物質を含んだ抽出剤３ａを
下方に流動させて貯留する。Figure s1!3 shows the extractant 3a after the extraction process, which can be stored separately from the extractant 3.
is heated and rises as steam, which comes into contact with the electronic component IKg and is extracted with steam, causing the extractant 3a containing contaminants to flow downward and be stored.
このよう々方法で電子部品１を蒸気抽出すると、電子部
品１に接触する抽出剤３は、抽出後の抽出剤を含まない
ので、前記第２図における場合よりも、更に高い除去率
で汚染物質を抽出、除去させることができる。When the electronic component 1 is extracted with steam in this manner, the extractant 3 that comes into contact with the electronic component 1 does not contain the extracted agent after extraction, so that contaminants can be removed with a higher removal rate than in the case shown in FIG. can be extracted and removed.
以上述べた実施例は、何れも製造された電子部品１をサ
ンプリングして、この電子部品ＩＫ付着した汚染物質の
成分、量の検定を行う用に供するものであるが、これら
実施例の技術をそのまＮ電子部品１に付着した汚染物質
の除去工程に適用し、高品位の電子部品を製造する手段
に供することも可能である。All of the embodiments described above are used to sample the manufactured electronic component 1 and verify the composition and amount of contaminants attached to the electronic component IK. It is also possible to apply the method as it is to the process of removing contaminants adhering to the N electronic component 1, and to provide a means for manufacturing high-quality electronic components.
ｋお、上記テフロン製の容器２は金属製、例えば鉄製の
容器、あるいは磁器製の容器等の内＠にテフロン材で被
覆した容器にしてもよく、このよう々容器も本発明の範
囲に含まれる。The above-mentioned Teflon container 2 may be a metal container, such as an iron container, or a porcelain container, which is coated with a Teflon material, and such containers are also included in the scope of the present invention. It will be done.
以上述べた本発明によって、電子部品に付着した汚染物
質を９９％以上の高い除去率で除去することが可能にな
り、電子部品の品質を向上させ、またこれを組み込んだ
製品の性能および信頼性を向上させることができる。The present invention described above makes it possible to remove contaminants attached to electronic components with a high removal rate of 99% or more, improving the quality of electronic components and improving the performance and reliability of products incorporating the same. can be improved.
また、抽出剤を少量の使用で実施することができ、また
、汚染物質の検定感度を高めることができる。In addition, it can be carried out using a small amount of extractant, and the sensitivity of the assay for contaminants can be increased.
第１白は本発明方法の一実施例の説明図、第２図は容器
にバリヤーを設けて行う本発明方法の一実施例の説明図
で、ｆＡｌ、（Ｂ）は夫々異ならバリヤーの形状を設け
た実施例を示し、第３図は抽出剤を分離して行う本発明
方法の一実施例の説明図、第４図は従来方法の説明図で
ある。
１・・・電子部品、 ２・・・容器、 ３−・
・抽出剤、４・−・容器、 ４ａ・・・封入口、４
ｂ・・・バリャーThe first white line is an explanatory diagram of an embodiment of the method of the present invention, and the second figure is an explanatory diagram of an embodiment of the method of the present invention carried out by providing a barrier in a container. FIG. 3 is an explanatory diagram of an embodiment of the method of the present invention in which the extractant is separated, and FIG. 4 is an explanatory diagram of the conventional method. 1...Electronic component, 2...Container, 3-...
・Extractant, 4--Container, 4a... Enclosure port, 4
b...Varya
Claims (1)
する汚染物質の除去方法において、上記電子部品をポリ
テトラフルオロエチレン製の容器に抽出剤と共に入れ、
上記容器を封止し、８０℃以上の温度で加熱して上記汚
染物質を抽出、除去することを特徴とする汚染物質の除
去方法。1. In a method for removing contaminants that uses an extractant to remove contaminants attached to electronic components, the electronic components are placed in a polytetrafluoroethylene container together with an extractant;
A method for removing contaminants, which comprises sealing the container and heating the container at a temperature of 80° C. or higher to extract and remove the contaminants.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8822090A JPH03288433A (en) | 1990-04-04 | 1990-04-04 | Method of removing contaminated materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8822090A JPH03288433A (en) | 1990-04-04 | 1990-04-04 | Method of removing contaminated materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03288433A true JPH03288433A (en) | 1991-12-18 |
Family
ID=13936801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8822090A Pending JPH03288433A (en) | 1990-04-04 | 1990-04-04 | Method of removing contaminated materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03288433A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049997A1 (en) * | 1998-03-25 | 1999-10-07 | Daikin Industries, Ltd. | Method of cleaning fluororubber molded product for semiconductor fabrication device and cleaned molded product |
-
1990
- 1990-04-04 JP JP8822090A patent/JPH03288433A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049997A1 (en) * | 1998-03-25 | 1999-10-07 | Daikin Industries, Ltd. | Method of cleaning fluororubber molded product for semiconductor fabrication device and cleaned molded product |
| US6663722B1 (en) | 1998-03-25 | 2003-12-16 | Daikin Industries, Ltd. | Method of cleaning fluorine-containing rubber molded article for semiconductor production apparatuses and cleaned molded article |
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