JPH03285212A - Anisotropic conductive film and manufacture thereof - Google Patents
Anisotropic conductive film and manufacture thereofInfo
- Publication number
- JPH03285212A JPH03285212A JP8647990A JP8647990A JPH03285212A JP H03285212 A JPH03285212 A JP H03285212A JP 8647990 A JP8647990 A JP 8647990A JP 8647990 A JP8647990 A JP 8647990A JP H03285212 A JPH03285212 A JP H03285212A
- Authority
- JP
- Japan
- Prior art keywords
- insulating member
- anisotropic conductive
- conductive film
- resin layer
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229920005989 resin Polymers 0.000 claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 43
- 239000002344 surface layer Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 7
- 238000007743 anodising Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、LSIの実装や回路基板間の接続に用いられ
る異方性導電膜およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an anisotropic conductive film used for mounting LSIs and connecting circuit boards, and a method for manufacturing the same.
(従来の技術)
従来の異方性導電膜において、無機材料からなる膜状の
絶縁部材に導電部材を埋め込んで構成されるものがある
。例えば、絶縁部材がセラミックスからなり、Alから
なる導電部材が絶縁部材内に60μm程度の微細ピッチ
で膜厚方向に埋め込まれたものが知られている。異方性
導電膜によりLSIを実装するとき、LSIと基板の間
に異方性導電膜を配設し、LSIを基板に加圧して、L
SIおよび基板の電極同士を導電部材により接続するよ
うにしている。(Prior Art) Some conventional anisotropic conductive films are constructed by embedding a conductive member in a film-like insulating member made of an inorganic material. For example, it is known that the insulating member is made of ceramics and the conductive member made of Al is embedded in the insulating member at a fine pitch of about 60 μm in the film thickness direction. When mounting an LSI using an anisotropic conductive film, the anisotropic conductive film is placed between the LSI and the substrate, and the LSI is pressed against the substrate.
The electrodes of the SI and the substrate are connected to each other by a conductive member.
(発明が解決しようとする課題)
しかしながら、このような従来の異方性導電膜にあって
は、絶縁部材がセラミックス等の無機材料から構成され
ているため、接続不良が発生したり、しsr裏表面基板
表面に傷がついたりするといった問題点があった。(Problems to be Solved by the Invention) However, in such a conventional anisotropic conductive film, since the insulating member is made of an inorganic material such as ceramics, connection failures may occur, and sr. There were problems such as scratches on the back surface substrate surface.
すなわち、絶縁部材がセラミックス等の無機材料から構
成されていると、絶縁部材がもろく割れ易くなり、LS
Iや基板間の段差や基板の反りやうねりにより、LSI
の実装時に異方性導電膜が割れて、加圧時に割れた絶縁
部材が移動する。この結果、導電部材による電極同士の
導通が確保されなくなり、接続不良が発生する。In other words, if the insulating member is made of an inorganic material such as ceramics, the insulating member will become brittle and break easily, resulting in LS
LSI
The anisotropic conductive film cracks during mounting, and the cracked insulating member moves when pressurized. As a result, conduction between the electrodes by the conductive member is no longer ensured, resulting in poor connection.
また、上述の割れた絶縁部材の移動により、LSIの表
面や基板の表面に傷がつく。Further, the movement of the cracked insulating member described above damages the surface of the LSI and the surface of the substrate.
(発明の目的)
そこで本発明は、絶縁部材の移動を樹脂層により防止し
て、LSIの表面や基板の表面に傷がつくのを防止する
とともに、接続不良の発生を防止することができる異方
性導電膜およびその製造方法を提供することを目的とし
ている。(Purpose of the Invention) Therefore, the present invention aims to prevent the movement of an insulating member using a resin layer, thereby preventing scratches on the surface of an LSI or the surface of a substrate, as well as preventing the occurrence of connection failures. The object of the present invention is to provide a directional conductive film and a method for manufacturing the same.
(発明の構成)
本発明による異方性導電膜は、上記目的を達成するため
、絶縁材料からなり、厚さ方向に貫通した孔を有する膜
状の絶縁部材と、絶縁部材の孔内に設けられ、絶縁部材
から突出する突出部を有する導電部材と、絶縁部材の所
定領域の表面を覆う樹脂層と、を備えたことを特徴とす
るものである。(Structure of the Invention) In order to achieve the above object, the anisotropic conductive film according to the present invention includes a film-like insulating member made of an insulating material and having holes penetrating in the thickness direction, and a film-like insulating member provided in the holes of the insulating member. The device is characterized in that it includes a conductive member having a protrusion projecting from the insulating member, and a resin layer covering the surface of a predetermined region of the insulating member.
また、本発明による異方性導電膜の製造方法は、上記目
的を達成するため、導電基板を陽極酸化して、厚さ方向
に延在した孔を有する膜状の絶縁部材を形成する工程と
、絶縁部材の孔に導電材料を埋め込む工程と、絶縁部材
の両面の表層を除去して、導電材料を絶縁部材の両面か
ら突出させる工程と、絶縁部材の所定領域の表面を覆う
樹脂層を形成する工程と、を含むことを特徴とするもの
である。Furthermore, in order to achieve the above object, the method for manufacturing an anisotropic conductive film according to the present invention includes a step of anodizing a conductive substrate to form a film-like insulating member having holes extending in the thickness direction. , a step of embedding a conductive material into the hole of the insulating member, a step of removing the surface layer on both sides of the insulating member to make the conductive material protrude from both sides of the insulating member, and forming a resin layer covering the surface of a predetermined area of the insulating member. The invention is characterized by including the steps of:
以下、本発明を実施例に基づいて具体的に説明する。Hereinafter, the present invention will be specifically explained based on Examples.
第1−14図は本発明に係る異方性導電膜の第1実施例
を示す図である。1-14 are diagrams showing a first embodiment of an anisotropic conductive film according to the present invention.
まず、構成を説明する。First, the configuration will be explained.
第1〜3図において、11は異方性導電膜であり、異方
性導電膜11は絶縁部材12、導電部材13および樹脂
層14を備えている。絶縁部材12は絶縁材料、すな・
わち、AIを陽極酸化することにより形成されるAlz
Oxからなる膜状の部材であり、絶縁部材12は厚さ方
向に貫通する孔12aを有している。In FIGS. 1 to 3, reference numeral 11 denotes an anisotropic conductive film, and the anisotropic conductive film 11 includes an insulating member 12, a conductive member 13, and a resin layer 14. The insulating member 12 is an insulating material, such as
That is, Alz formed by anodic oxidation of AI
The insulating member 12 is a film-like member made of Ox, and has a hole 12a penetrating in the thickness direction.
絶縁部材12の孔12aにはAuからなる導電部材13
が設けられ、導電部材13は絶縁部材12から突出する
突出部13aを有している。樹脂層14は絶縁部材12
の縁に沿って絶縁部材12の第2図における上面の一部
を連続的に覆っており、すなわち、絶縁部材12の所定
領域の表面を覆っている。A conductive member 13 made of Au is provided in the hole 12a of the insulating member 12.
is provided, and the conductive member 13 has a protrusion 13a that protrudes from the insulating member 12. The resin layer 14 is the insulating member 12
It continuously covers a part of the upper surface of the insulating member 12 in FIG.
次に、異方性導電膜11の製造方法を第4〜14図に従
って説明することにより、本発明に係る異方性導電膜の
製造方法の第1例を説明する。Next, a first example of the method for manufacturing the anisotropic conductive film according to the present invention will be described by explaining the method for manufacturing the anisotropic conductive film 11 according to FIGS. 4 to 14.
まず、第4図に示すように、Al基板15の一方の面を
所定パターンのフォトレジスト16によりマスクする。First, as shown in FIG. 4, one surface of the Al substrate 15 is masked with a photoresist 16 having a predetermined pattern.
例えば、フォトレジスト16は50μmピッチで配列さ
れる複数の直径20μmのドツトパターンからなる0次
いで、AI!基板15のフォトレジス日6例の上層部を
例えば酸性溶液に浸し、A1基板15を陽極として電気
分解して、Al基板15の上層部を陽極酸化する。この
陽極酸化により、第5図に示すようなAl2O3材17
およびAl材18が形成される。次いで、第6図に示す
ように、フォトレジスト16を除去する。次いで、第7
図に示すように、Aj2材18を溶解等により除去して
、Al2O3材17に貫通孔17aを形成する。すなわ
ち本工程が、導電基板を陽極酸化して、厚さ方向に延在
した孔を有する膜状の絶縁部材を形成する工程である。For example, the photoresist 16 consists of a plurality of dot patterns each having a diameter of 20 μm arranged at a pitch of 50 μm. The upper layer of the six photoresist substrates 15 is immersed in, for example, an acidic solution and electrolyzed using the A1 substrate 15 as an anode to anodize the upper layer of the Al substrate 15. Through this anodization, the Al2O3 material 17 as shown in FIG.
And Al material 18 is formed. Next, as shown in FIG. 6, the photoresist 16 is removed. Then the seventh
As shown in the figure, the Aj2 material 18 is removed by melting or the like to form a through hole 17a in the Al2O3 material 17. That is, this step is a step of anodizing the conductive substrate to form a film-like insulating member having holes extending in the thickness direction.
次いで、第8図に示すように、貫通孔17aにAU材1
9を埋め込む。すなわち本工程が、絶縁部材の孔に導電
材料を埋め込む工程である。Next, as shown in FIG. 8, the AU material 1 is inserted into the through hole 17a.
Embed 9. That is, this step is a step of embedding a conductive material into the hole of the insulating member.
次いで、第9図に示すように、AlzO,材17の表層
を溶解して除去し、膜部材20を形成する。Next, as shown in FIG. 9, the surface layer of the AlzO material 17 is dissolved and removed to form a membrane member 20.
すなわち、本工程が、絶縁部材の両面の表層を除去して
、導電材料を絶縁部材の両面から突出させる工程である
。That is, this step is a step of removing the surface layers on both sides of the insulating member and causing the conductive material to protrude from both sides of the insulating member.
次いで、ペースト状の樹脂を塗布するディスペンス法や
印刷により樹脂パターンを形成する印刷法により膜部材
20の縁に沿って膜部材20の第9図における上面の一
部を連続的に覆う樹脂層を形成すると、第1〜3図の異
方性導電膜11が成形される。すなわち本工程が、絶縁
部材の所定領域の表面を覆う樹脂層を形成する工程であ
る。Next, a resin layer is formed to continuously cover a part of the upper surface of the membrane member 20 in FIG. 9 along the edge of the membrane member 20 by a dispensing method in which a paste-like resin is applied or a printing method in which a resin pattern is formed by printing. Once formed, the anisotropic conductive film 11 shown in FIGS. 1 to 3 is formed. That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
なお、第4〜9図に示される工程の代わりに第1O〜1
4図に示す工程を用いて膜部材20を形成してもよい。Note that instead of the steps shown in FIGS. 4 to 9, steps 10 to 1
The membrane member 20 may be formed using the steps shown in FIG.
すなわち、まず、第10図に示すA!!基板1の表層を
、0〜20℃の10〜20%硫酸溶液中で5〜60分、
陽極酸化する。ただし、温度変動幅を5℃以内、電流密
度を1〜3A/dm”とする。この陽極酸化により、第
11図に示すようなAl2O2からなる表層部2および
AI!からなる本体部3を形成する。表層部2はいわゆ
る陽極酸化膜であり、複数の微小な孔2aを有している
。表層部2の厚さは1〜100μm、孔2aの孔径は0
.2μm以下、孔ピッチは0.6μm以下である。That is, first, A! shown in FIG. ! The surface layer of the substrate 1 is soaked in a 10-20% sulfuric acid solution at 0-20°C for 5-60 minutes.
Anodize. However, the temperature fluctuation range shall be within 5°C and the current density shall be 1 to 3 A/dm. Through this anodization, a surface layer portion 2 made of Al2O2 and a main body portion 3 made of AI! are formed as shown in Fig. 11. The surface layer 2 is a so-called anodic oxide film and has a plurality of minute holes 2a.The thickness of the surface layer 2 is 1 to 100 μm, and the diameter of the holes 2a is 0.
.. The hole pitch is 0.6 μm or less.
次いで、第12図に示すように、表層部2の孔2a内に
例えば電解析出によりAu材4を形成する。Next, as shown in FIG. 12, an Au material 4 is formed in the hole 2a of the surface layer 2 by, for example, electrolytic deposition.
次いで、第13図に示すように、表層部2から本体部3
を除去して、表層部20両面の表層を除去すると、第1
4図に示す膜部材が成形される。この工程を用いた場合
、前述の工程によるものと比較すると絶縁部材の孔の径
およびピッチ等が小さくなる。Next, as shown in FIG. 13, from the surface layer 2 to the main body 3
When the surface layer on both sides of the surface layer portion 20 is removed, the first
The membrane member shown in FIG. 4 is molded. When this process is used, the diameter, pitch, etc. of the holes in the insulating member are smaller than those using the above-mentioned process.
第15〜17図は本発明に係る異方性導電膜の第2実施
例を示す図である。なお、第15〜17図において、第
1〜14図に示す本発明に係る異方性導電膜と同一の構
成部材には同じ符号を付してその説明を省略し、以下の
実施例においても同様とする。15 to 17 are diagrams showing a second embodiment of the anisotropic conductive film according to the present invention. In addition, in FIGS. 15 to 17, the same components as those of the anisotropic conductive film according to the present invention shown in FIGS. The same shall apply.
第15.16図において、2工は異方性導電膜であり、
異方性導電膜21の樹脂層24は絶縁部材12の周面を
連続的に覆っており、すなわち、樹脂層24は絶縁部材
12の所定領域の表面を覆っている。In Figure 15.16, the second layer is an anisotropic conductive film,
The resin layer 24 of the anisotropic conductive film 21 continuously covers the circumferential surface of the insulating member 12, that is, the resin layer 24 covers the surface of a predetermined region of the insulating member 12.
次に、異方性導電膜21の製造方法を説明することによ
り、本発明に係る異方性導電膜の製造方法の第2例を説
明する。Next, a second example of the method for manufacturing the anisotropic conductive film according to the present invention will be explained by explaining the method for manufacturing the anisotropic conductive film 21.
まず、上述の第4〜9図あるいは第1O〜14図に示す
工程と同一の工程により、膜部材20を形成する。First, the membrane member 20 is formed by the same steps as those shown in FIGS. 4 to 9 or 10 to 14 described above.
次いで、第17図に示すように、膜部材20の四方の周
面を溶融樹脂22に順次接触させ、引き上げると、異方
性導電膜21が成形される。すなわち本工程が、絶縁部
材の所定領域の表面を覆う樹脂層を形成する工程である
。Next, as shown in FIG. 17, the four circumferential surfaces of the film member 20 are successively brought into contact with the molten resin 22 and pulled up, thereby forming the anisotropic conductive film 21. That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
第18図は本発明に係る異方性導電膜の第3実施例を示
す図である。FIG. 18 is a diagram showing a third embodiment of an anisotropic conductive film according to the present invention.
第18図において、31は異方性導電膜であり、異方性
導電膜31の樹脂層34は絶縁部材12の上下面のどち
らか一方の全面を連続的に覆っており、すなわち、樹脂
層34は絶縁部材12の所定領域の表面を覆っている。In FIG. 18, 31 is an anisotropic conductive film, and the resin layer 34 of the anisotropic conductive film 31 continuously covers either the upper or lower surface of the insulating member 12, that is, the resin layer 34 covers the surface of a predetermined area of the insulating member 12.
次に、異方性導電膜31の製造方法を説明することによ
り、本発明に係る異方性導電膜の製造方法の第3例を説
明する。Next, a third example of the method for manufacturing an anisotropic conductive film according to the present invention will be described by explaining a method for manufacturing the anisotropic conductive film 31.
まず、上述の第4〜9図あるいは第10〜14図に示す
工程と同一の工程により、膜部材20を形成する。First, the membrane member 20 is formed by the same steps as those shown in FIGS. 4 to 9 or 10 to 14 described above.
次いで、スプレー法やスピンコード法あるいはLB腹膜
法より、膜部材20の上下面のどちらか一方の全面を覆
う樹脂層を形成すると、異方性導電膜31が成形される
。すなわち本工程が、絶縁部材の所定領域の表面を覆う
樹脂層を形成する工程である。Next, by forming a resin layer covering either the entire upper or lower surface of the membrane member 20 by a spray method, a spin cord method, or an LB peritoneal method, an anisotropic conductive film 31 is formed. That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
第19図は本発明に係る異方性導電膜の第4実施例を示
す図である。FIG. 19 is a diagram showing a fourth embodiment of an anisotropic conductive film according to the present invention.
第19図において、41は異方性導電膜であり、異方性
導電膜41の樹脂層44は絶縁部材12の上下面および
四方の周面の全面を連続的に覆っており、すなわち、樹
脂層44は絶縁部材12の所定領域の表面を覆っている
。In FIG. 19, 41 is an anisotropic conductive film, and the resin layer 44 of the anisotropic conductive film 41 continuously covers the upper and lower surfaces and all four circumferential surfaces of the insulating member 12. Layer 44 covers a predetermined area of the surface of insulating member 12 .
次に、異方性導電膜41の製造方法を説明することによ
り、本発明に係る異方性導電膜の製造方法の第4例を説
明する。Next, a fourth example of the method for manufacturing the anisotropic conductive film according to the present invention will be explained by explaining the method for manufacturing the anisotropic conductive film 41.
まず、上述の第4〜9図あるいは第10〜14図に示す
工程と同一の工程により、膜部材20を形成する。First, the membrane member 20 is formed by the same steps as those shown in FIGS. 4 to 9 or 10 to 14 described above.
次いで、ディラビング法により、膜部材20の上下面お
よび四方の周面の全面を覆う樹脂層を形成すると、異方
性導電膜41が成形される。すなわち本工程−が、絶縁
部材の所定領域の表面を覆う樹脂層を形成する工程であ
る。Next, by forming a resin layer covering the entire upper and lower surfaces and all four circumferential surfaces of the membrane member 20 by a derubbing method, the anisotropic conductive film 41 is formed. That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
第20図は本発明に係る異方性導電膜の第5実施例を示
す図である。FIG. 20 is a diagram showing a fifth embodiment of an anisotropic conductive film according to the present invention.
第20図において、51は異方性導電膜であり、異方性
導電膜51の樹脂層54は絶縁部材12の上下面のどち
らか一方の面を斑点状に部分的に覆っており、すなわち
、樹脂層54は絶縁部材12の所定領域の表面を覆って
いる。In FIG. 20, 51 is an anisotropic conductive film, and the resin layer 54 of the anisotropic conductive film 51 partially covers either the upper or lower surface of the insulating member 12 in a spotted manner, i.e. , the resin layer 54 covers the surface of a predetermined region of the insulating member 12.
次に、異方性導電膜51の製造方法を説明することによ
り本発明に係る異方性導電膜の製造方法の第5例を説明
する。Next, a fifth example of the method for manufacturing an anisotropic conductive film according to the present invention will be explained by explaining a method for manufacturing the anisotropic conductive film 51.
まず、上述の第4〜9図あるいは第10〜14図に示す
工程と同一の工程により、膜部材20を形成する。First, the membrane member 20 is formed by the same steps as those shown in FIGS. 4 to 9 or 10 to 14 described above.
次いで、スプレー法により、膜部材20の上下面のどち
らか一方の面を斑点状に部分的に覆う樹脂層を形成する
と、異方性導電膜51が成形される。Next, a resin layer is formed by a spraying method to partially cover either the upper or lower surface of the membrane member 20 in a dotted manner, thereby forming the anisotropic conductive film 51.
すなわち本工程が、絶縁部材の所定領域の表面を覆う樹
脂層を形成する工程である。That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
第21図は本発明に係る異方性導電膜の第6実施例を示
す図である。FIG. 21 is a diagram showing a sixth embodiment of an anisotropic conductive film according to the present invention.
第21図において、61は異方性導電膜であり、異方性
導電膜61の樹脂層64は絶縁部材12の上下面のどち
らか一方の面を格子状に部分的に覆っており、すなわち
、樹脂層64は絶縁部材12の所定領域の表面を覆って
いる。In FIG. 21, 61 is an anisotropic conductive film, and the resin layer 64 of the anisotropic conductive film 61 partially covers either the upper or lower surface of the insulating member 12 in a lattice pattern, i.e. , the resin layer 64 covers the surface of a predetermined area of the insulating member 12.
次に、異方性導電膜61の製造方法を説明することによ
り本発明に係る異方性導電膜の製造方法の第6例を説明
する。Next, a sixth example of the method for manufacturing an anisotropic conductive film according to the present invention will be described by explaining a method for manufacturing the anisotropic conductive film 61.
まず、上述の第4〜9図あるいは第1O〜14図に示す
工程と同一の工程により、膜部材20を形成する。First, the membrane member 20 is formed by the same steps as those shown in FIGS. 4 to 9 or 10 to 14 described above.
次いで、スクリーン印刷法や転写法により、膜部材20
の上下面のどちらか一方の面を格子状に部分的に覆う樹
脂層を形成すると、異方性導電膜61が成形される。す
なわち本工程が、絶縁部材の所定領域の表面を覆う樹脂
層を形成する工程である。Next, the membrane member 20 is formed by a screen printing method or a transfer method.
The anisotropic conductive film 61 is formed by forming a resin layer that partially covers one of the upper and lower surfaces in a lattice pattern. That is, this step is a step of forming a resin layer covering the surface of a predetermined region of the insulating member.
なお、第1〜6実施例において、樹脂層14.2434
.54.64が、例えばLSIを基板に実装するときの
接着剤を兼用する場合、樹脂層14等の材料としては例
えば熱可塑性の樹脂材料を用いるとよい。In addition, in the first to sixth embodiments, the resin layer 14.2434
.. When the adhesives 54 and 64 are used, for example, as an adhesive when mounting an LSI on a board, it is preferable to use, for example, a thermoplastic resin material as the material for the resin layer 14 and the like.
また、接着剤を兼用しない場合、樹脂層14等の材料と
しては例えばポリイミドを用いればよい。さらに、ポリ
イミドを用いる場合、樹脂層14等を形成後、樹脂層1
4等の表層をエツチングにより除去して、導電部材13
等を樹脂層14等から突出させる工程が必要になる。In addition, when an adhesive is not used, for example, polyimide may be used as the material for the resin layer 14 and the like. Furthermore, when using polyimide, after forming the resin layer 14 etc., the resin layer 1
4 and the like by etching to remove the conductive member 13.
A step of making the resin layer 14 and the like protrude from the resin layer 14 and the like is required.
上述のように第1〜6実施例では、絶縁部材13等の所
定領域の表面が樹脂層14等により覆われているので、
仮に、LSIの実装時に基板の反り等・により絶縁部材
12等が割れても、LSIを基板に加圧するとき、割れ
た絶縁部材12等を樹脂層14等により互いに連結する
ことができ、割れた絶縁部材12等が移動するのを防止
することができる。したがって、LSIの表面および基
板の表面に傷がつくのを防止するとともに、接続不良の
発生を防止することができる。As described above, in the first to sixth embodiments, the surface of the predetermined area of the insulating member 13 etc. is covered with the resin layer 14 etc.
Even if the insulating members 12, etc. are cracked due to board warping or the like during LSI mounting, the cracked insulating members 12, etc. can be connected to each other by the resin layer 14, etc. when pressing the LSI onto the board, and the cracks will not occur. It is possible to prevent the insulating member 12 and the like from moving. Therefore, it is possible to prevent the surface of the LSI and the surface of the substrate from being scratched, and also to prevent the occurrence of connection failures.
また、LSIの実装後、絶縁部材12等が割れていると
、LSI、基板および絶縁部材12等の熱膨張係数の差
により発生する応力を吸収あるいは緩和することができ
るので、本実施例は不具合を生じさせないで、接続の信
較性を向上することができる。Furthermore, if the insulating member 12 or the like is cracked after the LSI is mounted, the stress generated due to the difference in the coefficient of thermal expansion of the LSI, the substrate, the insulating member 12, etc. can be absorbed or alleviated, so this embodiment will not cause problems. The reliability of the connection can be improved without causing any problems.
(効果)
本発明によれば、絶縁部材の所定領域の表面を樹脂層に
より覆っているので、絶縁部材が割れた場合でも、絶縁
部材の移動を樹脂層により防止することができ、LSI
の表面や基板の表面に傷がつくのを防止するとともに、
接続不良の発生を防止することができる。(Effects) According to the present invention, since the surface of the predetermined area of the insulating member is covered with the resin layer, even if the insulating member is cracked, the resin layer can prevent the insulating member from moving, and the LSI
In addition to preventing scratches on the surface of the board and the surface of the board,
It is possible to prevent connection failures from occurring.
第1−14図は本発明に係る異方性導電膜の第1実施例
を示す図であり、第1図はその平面図、第2図はその断
面図、第3図はその要部拡大断面図、第4〜14図はそ
の製造方法を説明するための断面図、第15〜17図は
本発明に係る異方性導電膜の第2実施例を示す図であり
、第15図はその平面図、第16図はその断面図、第1
7図はその製造方法を説明するための図、第18図は本
発明に係る異方性導電膜の第3実施例を示す断面図、第
19図は本発明に係る異方性導電膜の第4実施例を示す
断面図、第20図は本発明に係る異方性導電膜の第5実
施例を示す断面図、第21図は本発明に係る異方性導電
膜の第6実施例を示す断面図である。
11.21.31.41.51.61・−・・・・異方
性導電膜、12・・・・・・絶縁部材、
13・・・・・・導電部材、
14.24.34.44.54.64・・・・−・樹脂
層、1.15・・・・・・AJ基板(導電基板)、4.
19・・・・・・Au材(導電材料)。1-14 are diagrams showing a first embodiment of the anisotropic conductive film according to the present invention, in which FIG. 1 is a plan view thereof, FIG. 2 is a cross-sectional view thereof, and FIG. 3 is an enlarged view of the main part thereof. 4 to 14 are sectional views for explaining the manufacturing method thereof, and 15 to 17 are views showing a second embodiment of the anisotropic conductive film according to the present invention. Its plan view, Fig. 16 is its cross-sectional view,
FIG. 7 is a diagram for explaining the manufacturing method, FIG. 18 is a cross-sectional view showing a third embodiment of the anisotropic conductive film according to the present invention, and FIG. 19 is a diagram showing the anisotropic conductive film according to the present invention. 20 is a sectional view showing the fifth embodiment of the anisotropic conductive film according to the present invention, and FIG. 21 is a sectional view showing the sixth embodiment of the anisotropic conductive film according to the present invention. FIG. 11.21.31.41.51.61 - Anisotropic conductive film, 12 Insulating member, 13 Conductive member, 14.24.34.44 .54.64...-Resin layer, 1.15...AJ substrate (conductive substrate), 4.
19...Au material (conductive material).
Claims (2)
る膜状の絶縁部材と、絶縁部材の孔内に設けられ、絶縁
部材から突出する突出部を有する導電部材と、絶縁部材
の所定領域の表面を覆う樹脂層と、を備えたことを特徴
とする異方性導電膜。(1) A film-like insulating member made of an insulating material and having a hole penetrating in the thickness direction, a conductive member provided in the hole of the insulating member and having a protrusion projecting from the insulating member, and a predetermined portion of the insulating member. An anisotropic conductive film comprising: a resin layer covering the surface of the region.
を有する膜状の絶縁部材を形成する工程と、絶縁部材の
孔に導電材料を埋め込む工程と、絶縁部材の両面の表層
を除去して、導電材料を絶縁部材の両面から突出させる
工程と、絶縁部材の所定領域の表面を覆う樹脂層を形成
する工程と、を含むことを特徴とする異方性導電膜の製
造方法。(2) A process of anodizing the conductive substrate to form a film-like insulating member having holes extending in the thickness direction, a process of embedding a conductive material in the holes of the insulating member, and a process of forming a surface layer on both sides of the insulating member. A method for producing an anisotropic conductive film, comprising the steps of: removing the conductive material to protrude from both sides of the insulating member; and forming a resin layer covering the surface of a predetermined region of the insulating member. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8647990A JPH03285212A (en) | 1990-03-30 | 1990-03-30 | Anisotropic conductive film and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8647990A JPH03285212A (en) | 1990-03-30 | 1990-03-30 | Anisotropic conductive film and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03285212A true JPH03285212A (en) | 1991-12-16 |
Family
ID=13888110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8647990A Pending JPH03285212A (en) | 1990-03-30 | 1990-03-30 | Anisotropic conductive film and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03285212A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050145A (en) * | 1996-08-07 | 1998-02-20 | Mitsubishi Materials Corp | Non-isotropic electrically conductive film and its manufacture |
JP2008270157A (en) * | 2007-03-27 | 2008-11-06 | Fujifilm Corp | Anisotropic conductive member, and manufacturing method thereof |
JP2009140866A (en) * | 2007-12-10 | 2009-06-25 | Fujifilm Corp | Anisotropic conductivity member and its manufacturing method |
JP2009170153A (en) * | 2008-01-11 | 2009-07-30 | Fujifilm Corp | Method of manufacturing metal-filled microstructure, metal-filled microstructure, and anisotropic conductive member |
JP2009289730A (en) * | 2008-04-28 | 2009-12-10 | Fujifilm Corp | Structure and its manufacturing method |
US8524607B2 (en) | 2007-03-27 | 2013-09-03 | Fujifilm Corporation | Anisotropically conductive member and method of manufacture |
-
1990
- 1990-03-30 JP JP8647990A patent/JPH03285212A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050145A (en) * | 1996-08-07 | 1998-02-20 | Mitsubishi Materials Corp | Non-isotropic electrically conductive film and its manufacture |
JP2008270157A (en) * | 2007-03-27 | 2008-11-06 | Fujifilm Corp | Anisotropic conductive member, and manufacturing method thereof |
JP2008270158A (en) * | 2007-03-27 | 2008-11-06 | Fujifilm Corp | Anisotropic conductive member, and its manufacturing method |
US8524607B2 (en) | 2007-03-27 | 2013-09-03 | Fujifilm Corporation | Anisotropically conductive member and method of manufacture |
JP2009140866A (en) * | 2007-12-10 | 2009-06-25 | Fujifilm Corp | Anisotropic conductivity member and its manufacturing method |
JP2009170153A (en) * | 2008-01-11 | 2009-07-30 | Fujifilm Corp | Method of manufacturing metal-filled microstructure, metal-filled microstructure, and anisotropic conductive member |
JP2009289730A (en) * | 2008-04-28 | 2009-12-10 | Fujifilm Corp | Structure and its manufacturing method |
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