JPH03284844A - Bath for wet-treatment of substrate - Google Patents
Bath for wet-treatment of substrateInfo
- Publication number
- JPH03284844A JPH03284844A JP8658590A JP8658590A JPH03284844A JP H03284844 A JPH03284844 A JP H03284844A JP 8658590 A JP8658590 A JP 8658590A JP 8658590 A JP8658590 A JP 8658590A JP H03284844 A JPH03284844 A JP H03284844A
- Authority
- JP
- Japan
- Prior art keywords
- inner container
- substrates
- semiconductor substrate
- chemical liquid
- outer container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 239000000126 substance Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 45
- 238000005530 etching Methods 0.000 abstract description 13
- 239000007788 liquid Substances 0.000 abstract description 10
- 239000004809 Teflon Substances 0.000 abstract description 8
- 229920006362 Teflon® Polymers 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000000243 solution Substances 0.000 description 12
- 239000003814 drug Substances 0.000 description 5
- 229940079593 drug Drugs 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、基板のウェット処理槽に係り、たとえば半
導体基板上に成長した膜を均一にすることを目的とする
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a wet treatment bath for substrates, and its purpose is to make a film grown on, for example, a semiconductor substrate uniform.
従来の技術
半導体基板を製造するにあたり、コンデンサーの寄生容
量を小さくしたり、半導体基板上に発生するじみを防止
するため、半導体基板上に成長した膜を均一にエツチン
グする必要がある。以下に従来の半導体基板のウェット
処理槽について説明する。BACKGROUND OF THE INVENTION When manufacturing a semiconductor substrate, it is necessary to uniformly etch a film grown on the semiconductor substrate in order to reduce the parasitic capacitance of a capacitor and to prevent bleeds from occurring on the semiconductor substrate. A conventional wet processing tank for semiconductor substrates will be described below.
第3図は、従来の半導体基板のウェット処理槽である。FIG. 3 shows a conventional wet processing bath for semiconductor substrates.
第3図において、1は外容器、2は薬液、3は台、4は
テフロンハンガー 5は半導体基板、6は配管、7はフ
ィルター、8はポンプ、9は内容器である。In FIG. 3, 1 is an outer container, 2 is a chemical solution, 3 is a stand, 4 is a Teflon hanger, 5 is a semiconductor substrate, 6 is piping, 7 is a filter, 8 is a pump, and 9 is an inner container.
以上のように構成された半導体基板のウェット処理槽に
ついて以下その動作について説明する。The operation of the wet processing tank for semiconductor substrates configured as described above will be described below.
まず、第3図に示すように外容器1の中Iこ内容器9が
設置されており、内容器9の中に薬液2が満たされてい
る。内容器9の中からあふれ出た薬液2が外容器1と内
容器9の間にたまっている。First, as shown in FIG. 3, an inner container 9 is installed inside the outer container 1, and the inner container 9 is filled with the drug solution 2. The drug solution 2 overflowing from the inner container 9 is accumulated between the outer container 1 and the inner container 9.
さらに、外容器1の上部でかつ内容器9の中に台3があ
り、第3の上部にテフロンハンガー4に保持された半導
体基板5が設置されている。また、フィルター7および
ポンプ8が配管6によって接続され、外容器1と内容器
9の間にたまっている薬液2をポンプ8によって内容器
9の中に供給し、薬液2をフィルター7を通して循環濾
過をしかしながら上記の従来の構成では、第4図に示す
ように半導体基板5の傾斜方向が一定しないため、それ
らの間隔が不均一となり、半導体基板5に接触する薬液
2の流れも不均一となる。特に第4図のfで示す半導体
基板5は、薬液2の流れを妨げている。このような事か
ら半導体基板5に成長している膜10が半導体基板5問
および面内においてバラツキの生じる要因になっていた
。Furthermore, there is a stand 3 in the upper part of the outer container 1 and in the inner container 9, and a semiconductor substrate 5 held by a Teflon hanger 4 is installed in the third upper part. In addition, a filter 7 and a pump 8 are connected by a pipe 6, and the chemical solution 2 accumulated between the outer container 1 and the inner container 9 is supplied into the inner container 9 by the pump 8, and the drug solution 2 is circulated and filtered through the filter 7. However, in the above conventional configuration, as shown in FIG. 4, the inclination direction of the semiconductor substrate 5 is not constant, so the intervals between them are uneven, and the flow of the chemical solution 2 in contact with the semiconductor substrate 5 is also uneven. . In particular, the semiconductor substrate 5 indicated by f in FIG. 4 obstructs the flow of the chemical solution 2. For this reason, the film 10 grown on the semiconductor substrate 5 has become a cause of variations among the five semiconductor substrates and within the plane.
第5図に第3図、第4図に示す従来例のエツチング精度
を示す。同図(a)は半導体基板Il!11〜嵐17毎
のエツチング処理後の半導体基板間の半導体基板上膜厚
の分布を示し、同図(b)は半導体基板歯1〜N111
7の任意の半導体基板の面内の膜厚分布を示したもので
ある。第5図(a) 、 (b)より半導体基板上の膜
厚にバラツキが生じていることがわかる。FIG. 5 shows the etching accuracy of the conventional example shown in FIGS. 3 and 4. The same figure (a) shows the semiconductor substrate Il! The distribution of the film thickness on the semiconductor substrate between the semiconductor substrates after the etching process for each of the steps No. 11 to N117 is shown in FIG.
7 shows the in-plane film thickness distribution of an arbitrary semiconductor substrate of No. 7. It can be seen from FIGS. 5(a) and 5(b) that there are variations in the film thickness on the semiconductor substrate.
なお、第5図(C)は同図(b)における半導体基板上
の測定位置を示したものである。Note that FIG. 5(C) shows the measurement position on the semiconductor substrate in FIG. 5(b).
本発明は上記従来の問題点を解決するもので半導体基板
上に成長した膜を均一にエツチングする半導体基板のウ
ェット処理槽を提供することを目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a wet processing tank for semiconductor substrates that uniformly etches a film grown on a semiconductor substrate.
課題を解決するための手段
この目的を達成するために本発明の基板のウニエツト処
理槽は、半導体基板等の基板を載置する台を傾斜させ、
この台の上に載置される基板を同一方向に傾斜させるよ
うにしたものである。Means for Solving the Problems In order to achieve this object, the substrate processing tank of the present invention has a table on which a substrate such as a semiconductor substrate is placed, which is tilted,
The substrates placed on this table are tilted in the same direction.
作用
この構成によって、複数の基板の間隔が均一になり、薬
液の流れが均一になるため、たとえばエツチング処理に
おいては基板上に成長した膜を均一にエツチングする事
ができる。Function: With this configuration, the spacing between the plurality of substrates becomes uniform and the flow of the chemical becomes uniform, so that, for example, in an etching process, a film grown on the substrate can be etched uniformly.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。第1図は半導体基板のウェット処理槽を示すも
のである。第1図において、1は外容器、2は薬液、4
はテフロンハンガー、5は半導体基板、6は配管、7は
フィルター、8はポンプ、9は内容器、11は傾斜台で
ある。EXAMPLE An example of the present invention will be described below with reference to the drawings. FIG. 1 shows a wet processing tank for semiconductor substrates. In Figure 1, 1 is the outer container, 2 is the drug solution, and 4 is the outer container.
5 is a Teflon hanger, 5 is a semiconductor substrate, 6 is piping, 7 is a filter, 8 is a pump, 9 is an inner container, and 11 is a tilt table.
以上のように構成された半導体基板のウェット処理槽に
ついて、以下その動作を説明する。The operation of the wet processing tank for semiconductor substrates configured as described above will be described below.
まず、第1図に示すように外客器1の中に内容器9が設
置されており、内容器9の中に薬液2が満たされている
。内容器9からあふれでた薬液2が外容器1と内容器9
の間にたまっている。さらに外容器1の上部でかつ内容
器9の内部に傾斜台12があり、傾斜台11の上部にテ
フロンハンガー4に保持された半導体基板5が設置され
ている。また、フィルター7およびポンプ8が配管6に
よって接続され、外容器1と内容器9の間にたまってい
る薬液2をポンプ8によって内容器9の中に供給し、薬
液2をフィルター7を通して循環濾過を行っている。First, as shown in FIG. 1, an inner container 9 is installed in an outer container 1, and the inner container 9 is filled with a medical solution 2. The chemical solution 2 overflowing from the inner container 9 is transferred to the outer container 1 and the inner container 9.
It's accumulated in between. Further, there is a tilting table 12 above the outer container 1 and inside the inner container 9, and a semiconductor substrate 5 held by a Teflon hanger 4 is installed on the top of the tilting table 11. In addition, a filter 7 and a pump 8 are connected by a pipe 6, and the chemical solution 2 accumulated between the outer container 1 and the inner container 9 is supplied into the inner container 9 by the pump 8, and the drug solution 2 is circulated and filtered through the filter 7. It is carried out.
以上のように本実施例によれば、第2図に示すようにテ
フロンハンガー4に保持された半導体基板5は、傾斜台
11を設ける事によりすべての半導体基板5を同一方向
に傾斜させることができ、各半導体基板5の間隔を均一
にする事ができる。As described above, according to this embodiment, all the semiconductor substrates 5 held on the Teflon hanger 4 can be tilted in the same direction by providing the tilt table 11 as shown in FIG. Therefore, the intervals between the semiconductor substrates 5 can be made uniform.
これにより薬液2の流れがスムーズになり、半導体基板
5に均一に接触する。As a result, the chemical liquid 2 flows smoothly and contacts the semiconductor substrate 5 uniformly.
第6図に本実施例のエツチング精度を示す。同図(a)
は半導体基板歯1〜歯17毎のエツチング処理後の半導
体基板間の半導体基板上の膜厚の分布を示し、同図(b
)は半導体基板歯1〜隘17の任意の半導体基板の面内
(第5図Cと同じ位置)の膜厚分布を示したものである
。第5図、第6図を比較すれば、従来のエツチング精度
第5図(a)および第5図(b)に比較して本発明の実
施例の方が膜厚のバラツキが小さくなっていることがわ
かる。FIG. 6 shows the etching accuracy of this example. Figure (a)
shows the distribution of the film thickness on the semiconductor substrate between the semiconductor substrates after the etching process for each of the semiconductor substrate teeth 1 to 17;
) shows the film thickness distribution within the plane of an arbitrary semiconductor substrate of semiconductor substrate teeth 1 to 17 (same position as in FIG. 5C). Comparing Fig. 5 and Fig. 6, it is found that the variation in film thickness is smaller in the embodiment of the present invention than in the conventional etching accuracy Fig. 5(a) and Fig. 5(b). I understand that.
なお、本発明は上記実施例に限定される事なく、さらに
種々変形して実施できる。It should be noted that the present invention is not limited to the above-mentioned embodiments, and can be further modified and implemented in various ways.
例えば前記実施例では、半導体基板上に成長した膜の厚
さ調整のエツチングに適用した場合について説明したが
、半導体基板の厚さを調整するエツチング処理にも用い
ることができる。要は、本発明は半導体基板に接触する
液が均等か不均等かに依存する場合に適用し得るウェッ
ト処理槽であり、従って、エツチングの場合のみならず
、水洗等洗浄工程に用いても有効である。For example, in the above embodiment, the case where the present invention is applied to etching to adjust the thickness of a film grown on a semiconductor substrate has been described, but it can also be used for etching treatment to adjust the thickness of a semiconductor substrate. In short, the present invention is a wet processing tank that can be applied when the liquid that comes into contact with the semiconductor substrate depends on whether it is uniform or uneven, and therefore it is effective not only for etching but also for cleaning processes such as washing with water. It is.
さらに、半導体基板に接触する液を均等にできれば、テ
フロンハンガーの溝間隔を広くしたり、処理槽の構造、
例えば、傾斜台の角度、材質、支持方法、穴の数や大き
さおよび角度などの構成方法等も、適宜選択し得るもの
である事は言うまでもない。Furthermore, if the liquid that comes into contact with the semiconductor substrate could be made even, the groove spacing of the Teflon hanger could be widened, and the structure of the processing tank could be changed.
For example, it goes without saying that the angle of the tilt table, the material, the supporting method, the number, size and angle of holes, etc. can be selected as appropriate.
発明の効果
以上の説明から明らかなように、本発明は、台を傾斜さ
せることによって、基板に接触する液を均等にすること
ができるため処理精度を大幅に向上できる基板のウェッ
ト処理槽を実現できる。Effects of the Invention As is clear from the above explanation, the present invention realizes a wet processing tank for substrates that can significantly improve processing accuracy by tilting the table to make the liquid in contact with the substrate uniform. can.
第1図は本発明の一実施例に係る基板のウェット処理槽
の断面図、第2図は第1図の部分的拡大断面図、第3図
は従来の基板のウェット処理槽の断面図、第4図は第3
図の部分的拡大図、第5図(a) 、 (b)は従来の
エツチング精度を示す図、第5図(C)は半導体基板上
の膜厚測定位置を示す図、第6図(a) 、 (b)は
本発明の一実施例に係る基板のウェット処理槽のエツチ
ング精度を示す図である。
1・・・・・・外容器、2・・・・・・薬液、3・・・
・・・台、4・・・・・・テフロンハンガー 5・・・
・・・半導体基板、6・・・・・・配管、7・・・・・
・フィルター、8・・・・・・ポンプ、9・・・・・・
内容器、10・・・・・・成長膜、11・・・・・・傾
斜台。FIG. 1 is a sectional view of a substrate wet processing tank according to an embodiment of the present invention, FIG. 2 is a partially enlarged sectional view of FIG. 1, and FIG. 3 is a sectional view of a conventional substrate wet processing tank. Figure 4 is the third
5(a) and 5(b) are diagrams showing the conventional etching accuracy, FIG. 5(C) is a diagram showing the film thickness measurement position on the semiconductor substrate, and FIG. 6(a) is a partially enlarged view of the figure. ) and (b) are diagrams showing the etching accuracy of a substrate wet processing bath according to an embodiment of the present invention. 1... Outer container, 2... Chemical solution, 3...
...stand, 4...Teflon hanger 5...
...Semiconductor substrate, 6...Piping, 7...
・Filter, 8...Pump, 9...
Inner container, 10... Growth film, 11... Inclined table.
Claims (1)
る複数の基板を同一方向に傾斜させたことを特徴とする
基板のウェット処理槽。1. A wet processing tank for substrates, characterized in that an inclined table is provided in a chemical solution container, and a plurality of substrates placed on the table are inclined in the same direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8658590A JPH03284844A (en) | 1990-03-30 | 1990-03-30 | Bath for wet-treatment of substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8658590A JPH03284844A (en) | 1990-03-30 | 1990-03-30 | Bath for wet-treatment of substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03284844A true JPH03284844A (en) | 1991-12-16 |
Family
ID=13891088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8658590A Pending JPH03284844A (en) | 1990-03-30 | 1990-03-30 | Bath for wet-treatment of substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03284844A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6767841B2 (en) | 2000-01-20 | 2004-07-27 | Siltronic Ag | Process for producing a semiconductor wafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050926A (en) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | Semiconductor manufacturing device |
JPH03209822A (en) * | 1990-01-12 | 1991-09-12 | Seiko Epson Corp | Chemical solution processing vessel and automatic cleaning processor for semiconductor wafer |
-
1990
- 1990-03-30 JP JP8658590A patent/JPH03284844A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050926A (en) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | Semiconductor manufacturing device |
JPH03209822A (en) * | 1990-01-12 | 1991-09-12 | Seiko Epson Corp | Chemical solution processing vessel and automatic cleaning processor for semiconductor wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6767841B2 (en) | 2000-01-20 | 2004-07-27 | Siltronic Ag | Process for producing a semiconductor wafer |
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