JPH03283550A - Manufacture of ic package - Google Patents
Manufacture of ic packageInfo
- Publication number
- JPH03283550A JPH03283550A JP8138090A JP8138090A JPH03283550A JP H03283550 A JPH03283550 A JP H03283550A JP 8138090 A JP8138090 A JP 8138090A JP 8138090 A JP8138090 A JP 8138090A JP H03283550 A JPH03283550 A JP H03283550A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- layer
- baking
- substrate
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000007747 plating Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000010304 firing Methods 0.000 claims description 22
- 238000001465 metallisation Methods 0.000 claims description 20
- 238000005219 brazing Methods 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 21
- 229910017309 Mo—Mn Inorganic materials 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004859 Copal Substances 0.000 description 2
- 241000782205 Guibourtia conjugata Species 0.000 description 2
- 244000273256 Phragmites communis Species 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体素子を搭載できる集積回路用パッケー
ジの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing an integrated circuit package on which a semiconductor element can be mounted.
（従来の技術及びその問題点）
窒化アルミニウムはそのセラミックスの特性上、ｌ）熱
膨張係数が２５°Ｃ〜４００°Ｃのとき４．４Ｘ１０−
”／’Ｃとシリコン半導体の熱膨張係数に近＜、２）熱
伝導率が絶縁セラミックスの中で１４０ Ｗ／＋ｎ、Ｋ
（２５℃）と高く、特に高出力ＩＣ装着用の基板、パッ
ケージにその特性が有効であると考えられている。(Prior art and its problems) Aluminum nitride has a thermal expansion coefficient of 4.4X10- at 25°C to 400°C due to its ceramic properties.
``/'C is close to the thermal expansion coefficient of silicon semiconductor <, 2) Thermal conductivity is 140 W/+n, K among insulating ceramics
(25°C), and its characteristics are considered to be particularly effective for substrates and packages for mounting high-power ICs.
しかしながら、窒化アルミニウムは窒化物セラミックス
で高熱伝導率を達成するために高純度セラミックスであ
り、熱膨張係数が小さいためメタライズとの間で残留応
力を生じパッケージ用窒化アルミニウム部品として安定
した高値のメタライズ強度を得ることが困難であった。However, aluminum nitride is a high-purity ceramic that achieves high thermal conductivity with nitride ceramics, and its small coefficient of thermal expansion causes residual stress between it and the metallization, resulting in stable and high metallization strength for aluminum nitride parts for packages. was difficult to obtain.
従来、例えば酸化物セラミックスのメタライズ加工では
、メタライズ組成力（Ｍｏ、 Ｈ等の耐熱金属とガラス
成分よりなり焼成時にセラミックス中のガラス成分とメ
タライズのガラス成分とが相互拡散をし、メタライズ強
度を得ている。Conventionally, for example, in the metallization processing of oxide ceramics, metallization strength (composed of heat-resistant metals such as Mo and H and glass components, and the glass component in the ceramic and the glass component of the metallization mutually diffuse during firing to obtain metallization strength) ing.
窒化アルミニウム基板の場合は窒化アルミニウムが高純
度窒化物セラミックスであり、粒界にガラス成分を持た
ないため、単に焼成しただけでは高値のメタライズ強度
が得られない欠点があった。In the case of aluminum nitride substrates, aluminum nitride is a high-purity nitride ceramic and does not have a glass component in its grain boundaries, so it has the disadvantage that high metallization strength cannot be obtained simply by firing.
（発明に至る経過）
この問題を解決し、窒化アルミニウム基板とメタライズ
層との接着を強固にするため、本出願人は、特開昭６４
−９０５８６号公報において、窒化アルミニウム基板表
面にメタライズペーストを塗布し、還元雰囲気中１２５
０〜１４５０℃の温度で焼成する方法を提案した。これ
により、窒化アルミニウムの酸化により得られるＩＶ
ｔ Ｏｓ と、メタライズのＳｉｎ、等とが反応して得
られた厚さ０．２〜２０μ−のアルミナ層を形成し、こ
のアルミナ層の上にメタライズ層を設け、メタライズ層
と窒化アルミニウム基板との接着を強固にしている。(Process leading up to the invention) In order to solve this problem and strengthen the adhesion between the aluminum nitride substrate and the metallized layer, the present applicant has proposed
-90586, metallizing paste is applied to the surface of an aluminum nitride substrate, and 125% is applied in a reducing atmosphere.
A method of firing at a temperature of 0 to 1450°C was proposed. This allows the IV obtained by oxidation of aluminum nitride to
An alumina layer with a thickness of 0.2 to 20 μ- obtained by reacting t Os with metallized Sin, etc. is formed, a metallized layer is provided on this alumina layer, and the metallized layer and the aluminum nitride substrate are bonded. strengthens the adhesion.
しかし、集積回路用パッケージへの通用について本発明
者が更に詳しく研究を進めたところ、焼成によりメタラ
イズ層を形成した後、金具をメタライズ層へとろう付け
したり、更にこの後にめっきを施して焼成を行うときに
、上記のアルミナ層が成長し、好ましい値である２０７
７−を温かに越え、例えば５０〜１００ μ■もの厚さ
となることが明らかとなった。そして、アルミナ層が過
度に成長した結果、メタライズ層と金具との接着力はか
えって低下することが解った。However, as the inventor conducted more detailed research into the applicability to integrated circuit packages, he discovered that after forming a metallized layer by firing, the metal fittings were brazed to the metallized layer, and after this, plating was applied and then fired. The above alumina layer grows when performing 207, which is the preferred value.
It has become clear that the thickness of the film warmly exceeds 7.5 mm, for example, 50 to 100 .mu.cm. It was also found that as a result of excessive growth of the alumina layer, the adhesion between the metallized layer and the metal fittings actually decreased.
（発明が解決しようとする課題）
本発明の課題は、金具のろう付は工程及びめっき後の焼
成工程におけるアルミナ層の成長を抑制し、窒化アルミ
ニウム基板とメタライズ層との接合強度を大きくできる
ような、集積回路用パッケージの製造方法を提供するこ
とである。(Problem to be Solved by the Invention) The problem of the present invention is to suppress the growth of the alumina layer during the brazing process and the firing process after plating, and to increase the bonding strength between the aluminum nitride substrate and the metallized layer. Another object of the present invention is to provide a method for manufacturing an integrated circuit package.
（課題を解決するための手段）
本発明は、窒化アルミニウム基板表面にメタライズペー
ストを塗布し、還元雰囲気下に焼成してメタライズ層を
形成する工程と；
１０− ３Ｔｏｒｒ以下の圧力下で金具を前記メタライ
ズ層へとろう付けして窒化アルミニウム部品を作成する
工程と；
この窒化アルミニウム部品の表面にめっきを施す工程と
；
次いで１０−３Ｔｏｒｒ以下の圧力下で前記窒化アルミ
ニウム部品を焼成する工程とを有することを特徴とする
集積回路用パッケージの製造方法に係るものである。(Means for Solving the Problems) The present invention includes a step of applying a metallization paste to the surface of an aluminum nitride substrate and firing it in a reducing atmosphere to form a metallization layer; brazing to a metallized layer to create an aluminum nitride component; plating the surface of the aluminum nitride component; and then firing the aluminum nitride component under a pressure of 10 Torr or less. The present invention relates to a method for manufacturing an integrated circuit package, characterized in that:
（実施例）
第１図〜第５図は、本発明の一例によって窒化アルミニ
ウム部品を製造する方法を工程順に示す図である。(Example) FIGS. 1 to 5 are diagrams showing a method of manufacturing an aluminum nitride part according to an example of the present invention in order of steps.
まず第１図に示すように、窒化アルミニウム焼成基板１
上に所定組成のＭｏ−Ｍｎ系メタライズ用ペースト２
（固形分としてはＮｏ ： １００重量部、Ｍｎ＝５重
量部、１Ｖｘ（ｈ ： ２重量部、Ｓｉｎｇ ： ５
重量部にエチルセルロース系のバインダーでペースト状
に・したもの）を塗布する。次いで、例えば１００°Ｃ
で乾燥を行う。次に第２図に示すように、ペーストを塗
布した基板１を通常使用されているセラミック還元焼成
炉により、例えば最高温度１３００℃で４０分保持して
焼成してメタライズ層８を形成する。First, as shown in FIG. 1, an aluminum nitride fired substrate 1
Mo-Mn metallization paste 2 with a predetermined composition on top
(Solid content: No: 100 parts by weight, Mn = 5 parts by weight, 1Vx (h: 2 parts by weight, Sing: 5 parts by weight)
Apply a paste made with an ethyl cellulose binder to the weight part. Then, for example at 100°C
Dry with . Next, as shown in FIG. 2, the substrate 1 coated with the paste is fired in a commonly used ceramic reduction firing furnace at a maximum temperature of 1300° C. for 40 minutes to form a metallized layer 8.
このときの雰囲気中の酸素分圧は計算上は７．５×１０
−”−１，４Ｘ１０−”気圧の間と推定されるが、実際
は窒化アルミニウム部材形状、焼成炉により酸素分圧測
定は実質的には困難であるため、アルミナ層３の形成厚
みを測定し、適正な雰囲気の調整を実施することになる
。この焼成工程により、第２図に示すように窒化アルミ
ニウム基板１の表面全体に０．２〜２０μｍの厚さのア
ルミナ層３を形成する。The oxygen partial pressure in the atmosphere at this time is calculated to be 7.5×10
Although it is estimated to be between -1.4 x 10 - atmospheric pressure, it is actually difficult to measure the oxygen partial pressure due to the shape of the aluminum nitride member and the firing furnace, so the thickness of the alumina layer 3 formed is measured. Appropriate atmosphere adjustments will be made. Through this firing process, an alumina layer 3 having a thickness of 0.2 to 20 μm is formed on the entire surface of the aluminum nitride substrate 1, as shown in FIG.
このときアルミナ層３の厚さが２０μｍを越えるとメタ
ライズ強度が低下し、かつ熱放散もアルミナ層が厚い程
低下する。また、０．２μｍ未満であるとアルミナ層は
緻密でなく、窒化アルミニウム基板１表面に充分にメタ
ライズのガラス層と反応したアルミナ層が形成されない
ため、窒化アルミニウム基板１とメタライズ層８との熱
膨張差による熱ストレス等の応力緩和層としての効果が
得られず、窒化アルミニウム基板１表面にマイクロクラ
ックが生ずる。At this time, if the thickness of the alumina layer 3 exceeds 20 μm, metallization strength decreases, and heat dissipation also decreases as the alumina layer becomes thicker. If the thickness is less than 0.2 μm, the alumina layer will not be dense and an alumina layer that has sufficiently reacted with the metallized glass layer will not be formed on the surface of the aluminum nitride substrate 1, resulting in thermal expansion between the aluminum nitride substrate 1 and the metallized layer 8. The effect as a layer for alleviating stress such as thermal stress due to the difference cannot be obtained, and microcracks occur on the surface of the aluminum nitride substrate 1.
メタライズペースト２の焼成温度は１２５０〜１４５０
℃とすることが好ましい。これが１２５０°Ｃ未満であ
るとメタライズ層８内のｉｏが充分結晶化されず、メタ
ライズ層８内体の強度が弱くかつ緻密なメタライズ層８
が得られないため、メタライズ表面にめっきを施した場
合フクレ等が発生しやすい。また、焼成温度が１４５０
°Ｃを越えると、アルミナ層３とメタライズ層８との界
面又はメタライズ表面にガラス層が発生し、いずれも接
合強度の低下ならびにめっきのフクレ等の問題が発生す
る。The firing temperature of metallization paste 2 is 1250 to 1450
It is preferable to set it as °C. If this temperature is less than 1250°C, io in the metallized layer 8 will not be sufficiently crystallized, and the inner strength of the metallized layer 8 will be weak and the metallized layer 8 will be dense.
Therefore, blisters are likely to occur when plating is applied to the metallized surface. Also, the firing temperature is 1450
If the temperature exceeds .degree. C., a glass layer will form on the interface between the alumina layer 3 and the metallized layer 8 or on the metallized surface, causing problems such as a decrease in bonding strength and blistering of the plating.
次いで、第３図に示すように、メタライズ層８の表面に
ニッケルめっきを施し、ニッケルめっき層４を形成する
。Next, as shown in FIG. 3, nickel plating is applied to the surface of the metallized layer 8 to form a nickel plating layer 4.
次に、第４図に示すように、コパールからなるリード線
等の金具６を共晶銀ろう５によって８００〜９００°Ｃ
でろう付けし、窒化アルミニウム部品９を製造する。次
いで、第５図に示すように窒化アルミニウム部品の表面
にニッケル又は金めつきを施してめっき層７を形成し、
７００〜９００℃の温度で製品の焼成を行う。Next, as shown in FIG.
The aluminum nitride part 9 is manufactured by brazing. Next, as shown in FIG. 5, the surface of the aluminum nitride component is plated with nickel or gold to form a plating layer 7,
The product is fired at a temperature of 700-900°C.
ここで、本発明に従い、金具６のろう付は工程とめっき
層７の形成後の焼成工程を、１０− ３Ｔｏｒｒ以下の
圧力下で行うことが極めて重要である。Here, according to the present invention, it is extremely important that the brazing process of the metal fitting 6 and the firing process after forming the plating layer 7 are performed under a pressure of 10 -3 Torr or less.
即ち、従来は上記の各工程を還元雰囲気下（Ｎ２＋ Ｈ
ｅ）で、水蒸気の存在しない乾燥条件下で行っていた。That is, conventionally, each of the above steps was performed under a reducing atmosphere (N2+H
e) was carried out under dry conditions in the absence of water vapor.
ところが、これではアルミナ層３が過度に成長し、例え
ば５０〜１００μｍの厚さに達していた。これは、共晶
銀ろうのろう付けに使用する治具や窒化アルミニウム部
品９全体に付着している酸素が、加熱時に窒化アルミニ
ウムと反応するためと考えられる。However, in this case, the alumina layer 3 grew excessively, reaching a thickness of, for example, 50 to 100 μm. This is considered to be because oxygen adhering to the jig used for brazing the eutectic silver solder and the entire aluminum nitride component 9 reacts with the aluminum nitride during heating.
これに対し、本発明に従い共晶銀ろうによる金具６のろ
う付けと、めっき後の焼成とを１０−３Ｔｏｒｒ以下の
圧力下で行うと、アルミナＮ３の成長が抑えられ、１０
〜２０μｍ程度の厚さのまま安定したのである。これに
より、集積回路用パッケージの製品においても、ＩｖＮ
基板ｌとメタライズ層８との接合強度を非常に高く保持
することが可能となった。On the other hand, if the brazing of the metal fitting 6 with eutectic silver solder and the firing after plating are performed under a pressure of 10-3 Torr or less according to the present invention, the growth of alumina N3 is suppressed and 10
The thickness remained stable at about 20 μm. As a result, even in integrated circuit package products, IvN
It became possible to maintain extremely high bonding strength between the substrate l and the metallized layer 8.
共晶銀ろうによる金具６のろう付けと、めっき層７の形
成後の焼成とを行う際、雰囲気の圧力は１０−３Ｔｏｒ
ｒ以下とするが、１０− ３Ｔｏｒｒ以下とすると更に
好ましい。好ましい理由は、１０− ３Ｔｏｒｒ以上の
高真空にすると、酸素濃度が極端に低くなり、アルミナ
層の成長が一層確実におさえられるためである。When brazing the metal fittings 6 with eutectic silver solder and baking after forming the plating layer 7, the atmospheric pressure is 10-3 Torr.
r or less, and more preferably 10-3 Torr or less. The reason why it is preferable is that if the vacuum is set to a high vacuum of 10 -3 Torr or more, the oxygen concentration becomes extremely low, and the growth of the alumina layer can be suppressed more reliably.
共晶銀ろうによる金具ろう付けは、８００〜９００°Ｃ
で行うことが好ましく、８５０〜９００°Ｃで行うと更
に好ましい。めっき層７はニッケル又は金めつきとする
ことが好ましい。めっき層７を形成した後の焼成は、７
００〜９００″Ｃで行うことが好ましい。Brazing metal fittings using eutectic silver solder is at 800-900°C.
The temperature is preferably 850 to 900°C, and more preferably 850 to 900°C. The plating layer 7 is preferably nickel or gold plating. The firing after forming the plating layer 7 is performed in step 7.
It is preferable to carry out at 00 to 900''C.
金具としてはコパール類のリードの他、Ｆｅ −４２％
Ｎｉアロイのリード、Ｃｕ、 Ｃｕ−一のヒートシンク
材等が挙げられる。In addition to copal reeds, metal fittings include Fe -42%
Examples include Ni alloy leads, Cu, and Cu-1 heat sink materials.
集積回路用パッケージを作製する際は、公知の方法でｌ
ｖＮ基板に熱放散板（ヒートシンク）や金属セラミック
ス類のキャップ、ＩＣチップ収容のためのキャビティな
ど、設計上必要な部材を設ける。When manufacturing integrated circuit packages, l
Necessary design components such as a heat dissipation plate (heat sink), a cap made of metal ceramics, and a cavity for accommodating an IC chip are provided on the vN board.
以下、金具のろう付は工程時の圧力と、めっき層形成後
の焼成工程時の圧力を種々変更して第５図に示す窒化ア
ルミニウム部品を作製し、ＡｆｆＮ基板ｌとメタライズ
層８との間の接合強度（メタライズ強度）を調べた例に
ついて述べる。Hereinafter, the pressure during the brazing process of the metal fittings and the pressure during the firing process after the formation of the plating layer were variously changed to produce the aluminum nitride part shown in FIG. An example of investigating the bonding strength (metallization strength) of
実］１舛
Ｍｏ−Ｍｎ系のメタライズペーストを塗布厚２５μｍ程
度に窒化アルミニウム基板上にスクリーン印刷した後、
還元焼成雰囲気中で還元ガスの一部をウニツタを通し、
１３００°Ｃで焼成した。次にメタライズ層上にニッケ
ルめっきを施した後、共晶銀ろうを用いて約８００°Ｃ
でコパール類のリードをろう付けした。After screen printing a Mo-Mn metallization paste onto an aluminum nitride substrate to a coating thickness of about 25 μm,
A part of the reducing gas is passed through the sea urchin ivy in a reducing firing atmosphere,
It was fired at 1300°C. Next, after applying nickel plating on the metallized layer, heat it to about 80°C using eutectic silver solder.
I brazed the copal reeds.
次いで、この窒化アルミニウム部品の表面にニッケルめ
っきを施し、７５０°Ｃの温度で０．５時間焼成した。Next, the surface of this aluminum nitride part was nickel plated and fired at a temperature of 750°C for 0.5 hour.
ただし、コパール類のリードをメタライズ層へとろう付
けする際の圧力と、ニッケルめっき後の焼成時の圧力と
は種々変更した。その後、窒化アルミニウム基板表面上
のアルミナ層の厚さと、基板とメタライズ層の接合強度
（メタライズ強度）をそれぞれ調べた。結果を表に示す
。However, the pressure when brazing the copper lead to the metallized layer and the pressure during firing after nickel plating were varied. Thereafter, the thickness of the alumina layer on the surface of the aluminum nitride substrate and the bonding strength (metallization strength) between the substrate and the metallization layer were examined. The results are shown in the table.
表から解るように、コバール類のリードをろう付けする
時の圧力と、焼成時の圧力を１０− ３Ｔｏｒｒ以下と
することが、メタライズ強度を向上させるうえで極めて
重要である。As can be seen from the table, it is extremely important to keep the pressure when brazing Kovar leads and the pressure during firing to 10-3 Torr or less in order to improve the metallization strength.
（発明の効果）
本発明に係る集積回路用パッケージの製造方法によれば
、金具をメタライズ層へとろう付けする工程と、窒化ア
ルミニウム部品を焼成する工程とを、１０− ３Ｔｏｒ
ｒ以下の圧力下で行っているので、窒化アルミニウム基
板表面のアルミナ層の成長が抑えられ、所定の厚さのま
までアルミナ層を安定化させることができる。これによ
り、集積回路用パッケージの製品において、窒化アルミ
ニウム基板とメタライズ層との接合強度を非常に高くす
ることができ、機械的強度の高い集積回路用パッケージ
を得ることができる。(Effects of the Invention) According to the method for manufacturing an integrated circuit package according to the present invention, the step of brazing the metal fittings to the metallized layer and the step of firing the aluminum nitride parts are performed at 10-3 Torr.
Since the process is carried out under a pressure of r or less, growth of the alumina layer on the surface of the aluminum nitride substrate is suppressed, and the alumina layer can be stabilized while maintaining a predetermined thickness. As a result, in an integrated circuit package product, the bonding strength between the aluminum nitride substrate and the metallized layer can be made very high, and an integrated circuit package with high mechanical strength can be obtained.
第１図、第２図、第３図、第４図、第５図は、本発明の
一例による製造法を工程順に示す概略図である。
１・・・ＡｆＮ基板（／’ｌｆＮ焼成基板）３・・・ア
ルミナ層
４・・・Ｎｉめっき層
５・・・限ろう （共晶銀ろう）
６・・・金具（コバール類のリード）
７・・・めっき層
８・・・メタライズ層
９・・・窒化アルミニウム部品FIG. 1, FIG. 2, FIG. 3, FIG. 4, and FIG. 5 are schematic diagrams showing a manufacturing method according to an example of the present invention in order of steps. 1...AfN substrate (/'lfN fired substrate) 3...Alumina layer 4...Ni plating layer 5...Filling solder (eutectic silver solder) 6...Metal fitting (Kovar type lead) 7 ... Plating layer 8 ... Metallized layer 9 ... Aluminum nitride parts
Claims (1)
塗布し、還元雰囲気下に焼成してメタライズ層を形成す
る工程と； １０＾−＾３Ｔｏｒｒ以下の圧力下で金具を前記メタラ
イズ層へとろう付けして窒化アルミニウム部品を作成す
る工程と； この窒化アルミニウム部品の表面にめっき を施す工程と； 次いで１０＾−＾３Ｔｏｒｒ以下の圧力下で前記窒化ア
ルミニウム部品を焼成する工程とを有することを特徴と
する集積回路用パッケージの製造方法。[Claims] 1. A step of applying a metallization paste to the surface of an aluminum nitride substrate and firing it in a reducing atmosphere to form a metallization layer; and applying a metal fitting to the metallization layer under a pressure of 10^-^3 Torr or less. and brazing to create an aluminum nitride part; plating the surface of the aluminum nitride part; and then firing the aluminum nitride part under a pressure of 10^-^3 Torr or less. A method for manufacturing an integrated circuit package characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8138090A JPH03283550A (en) | 1990-03-30 | 1990-03-30 | Manufacture of ic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8138090A JPH03283550A (en) | 1990-03-30 | 1990-03-30 | Manufacture of ic package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03283550A true JPH03283550A (en) | 1991-12-13 |
Family
ID=13744695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8138090A Pending JPH03283550A (en) | 1990-03-30 | 1990-03-30 | Manufacture of ic package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03283550A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122253A (en) * | 1986-11-12 | 1988-05-26 | Hitachi Ltd | Seminconductor package |
| JPS6456867A (en) * | 1987-08-27 | 1989-03-03 | Fujitsu Ltd | Method for metallizing aln ceramic |
-
1990
- 1990-03-30 JP JP8138090A patent/JPH03283550A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122253A (en) * | 1986-11-12 | 1988-05-26 | Hitachi Ltd | Seminconductor package |
| JPS6456867A (en) * | 1987-08-27 | 1989-03-03 | Fujitsu Ltd | Method for metallizing aln ceramic |
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