JPH03278521A - Normal-pressure vapor growth apparatus - Google Patents

Normal-pressure vapor growth apparatus

Info

Publication number
JPH03278521A
JPH03278521A JP7922390A JP7922390A JPH03278521A JP H03278521 A JPH03278521 A JP H03278521A JP 7922390 A JP7922390 A JP 7922390A JP 7922390 A JP7922390 A JP 7922390A JP H03278521 A JPH03278521 A JP H03278521A
Authority
JP
Japan
Prior art keywords
wafer
tray
growth apparatus
semiconductor wafer
pressure vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7922390A
Other languages
Japanese (ja)
Other versions
JP3060477B2 (en
Inventor
Eiko Suzuki
栄子 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2079223A priority Critical patent/JP3060477B2/en
Publication of JPH03278521A publication Critical patent/JPH03278521A/en
Application granted granted Critical
Publication of JP3060477B2 publication Critical patent/JP3060477B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce particles to be produced when a semiconductor wafer is conveyed by a method wherein a wafer conveyance mechanism is constituted so as to be provided with a wafer pushing-up mechanism which is buried and installed in a wafer support sheet and a wafer transfer mechanism. CONSTITUTION:A normal-pressure vapor growth apparatus is constituted so as to be provided with a heating mechanism part of a wafer support sheet, with a wafer conveyance mechanism and with a film formation mechanism part. At the apparatus, the wafer conveyance mechanism is constituted so as to be provided with wafer pushing-up mechanisms 2 which are buried and installed in a wafer support sheet 3 and the water transfer mechanism. For example, a normal-pressure vapor growth apparatus is provided with a plurality of pins 2 which deliver a wafer 1 into a tray 3 and a wafer conveyance mechanism provided with an automatic handler which conveys the wafer 1 between the pins 2 on the tray 3. The pins 2 can be put in the tray 3, and protrude upward from the surface of the tray 3 by (b) [mm] only when the semiconductor wafer 1 is actually delivered.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は常圧気相成長装置に関し、特にウェハーをキャ
リアとトレー間で搬送する際に発生するパーティクルの
減少を図った常圧気相成長装置のウェハー搬送機構に関
する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an atmospheric vapor phase growth apparatus, and particularly to an atmospheric pressure vapor growth apparatus that aims to reduce particles generated when wafers are transferred between a carrier and a tray. Regarding a wafer transport mechanism.

〔従来の技術〕[Conventional technology]

従来この種の常圧CVD装置のウェハー搬送機構は、ウ
ェハーをトレーへ載せる時、まずウェハーをベルトでハ
ンドラーの待機位置まで持って行きハンドラーが半導体
ウェハー周辺をつかんで水平になったトレー上へ運び、
ある高さのとろこからトレー上へ落下させていた。
Conventionally, in the wafer transport mechanism of this type of atmospheric pressure CVD equipment, when placing a wafer on a tray, the wafer is first brought to the handler's standby position with a belt, and the handler grasps the semiconductor wafer around it and transports it onto a horizontal tray. ,
It was dropped onto a tray from a certain height.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の常圧CVD装置のウェハー搬送機構は、
ウェハーをトレーへ載せる時、トレー上の受は皿の上へ
ハンドラーがウェハーをつかんで搬送し、ある高さのと
ころからトレー上へ落下させていたが、この場合、ウェ
ハーをつかむハンドラーが水平に保たれていないとハン
ドラー自体がトレーへ接触したりウェハーがトレー上へ
斜めに落下するため、トレー上に成長されている膜が削
れて舞い上がりパーティクルが発生してしまうという欠
点がある。
The wafer transport mechanism of the conventional atmospheric pressure CVD apparatus described above is as follows:
When placing a wafer on a tray, the handler used to hold the wafer on the tray, transport it, and drop it onto the tray from a certain height. If this is not done, the handler itself will come into contact with the tray or the wafer will fall diagonally onto the tray, resulting in the film grown on the tray being scraped and flying up, generating particles.

〔発明の従来技術に対する相違点〕[Differences between the invention and the prior art]

上述した従来の常圧CVD装置のウェハー搬送機構に対
し、本発明はキャリアとトレー上のビン間の搬送をオー
トハンドラーで行いビンを靜かに下げる事によりウェハ
ーを常に水平な状態でトレー上受は皿へ載せることが出
来、それによってウェハー搬送の際のパーティクルを減
少させることができるという相違点を有する。
In contrast to the wafer transport mechanism of the conventional atmospheric pressure CVD apparatus described above, the present invention uses an autohandler to transport the wafer between the carrier and the bin on the tray, and by gently lowering the bin, the wafer is always received on the tray in a horizontal state. The difference is that it can be placed on a plate, thereby reducing particles during wafer transport.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の常圧気相成長装置は、トレー中にウェハーの受
は渡しを行うためのビンを複数個及びキャリアとトレー
上のビン間とのウェハーの搬送を行うオートハンドラー
を有するウェハー搬送機構を有している。
The atmospheric vapor phase growth apparatus of the present invention has a wafer transport mechanism including a plurality of bins in a tray for receiving and transferring wafers and an autohandler for transporting wafers between the carrier and the bins on the tray. are doing.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例のウェハー搬送機構でト
レー中のビンが3本の場合の縦断面図である。ビン2は
トレー3の中に入れる事が出来、実際に半導体ウェハー
1の受は渡しを行う時にのみb〔■〕だけトレー3の表
面より上に位置する。
FIG. 1 is a longitudinal sectional view of a wafer transport mechanism according to a first embodiment of the present invention in which there are three bins in a tray. The bin 2 can be placed in the tray 3, and the receiver for the semiconductor wafer 1 is actually positioned above the surface of the tray 3 by b[■] only when transferring.

第2図は第1図のトレー3と、その前後のトレーを横か
ら見た場合の正面図である。Aのトレーはまだ水平にな
っておらずビン2のみが出ている状態である。またBの
トレー3は完全に水平になっておりビン2の上にすでに
ウェハー1が搬送さhてきた状態である。Cのトレーは
ビン2がトレー中に収納されている。次に本発明である
半導体ウェハー搬送機構の動作を説明する。従来、半導
体ウェハー1はハンドラーによって第2図Bの位置まで
搬送されてハンドラーが半導体ウェハー1を離すと第2
図Cの状態になっていた。
FIG. 2 is a front view of the tray 3 of FIG. 1 and the trays in front and behind it, viewed from the side. Tray A is not yet level and only bottle 2 is sticking out. Moreover, the tray 3 of B is completely horizontal, and the wafer 1 has already been transferred onto the bin 2. In tray C, bottle 2 is stored in the tray. Next, the operation of the semiconductor wafer transport mechanism according to the present invention will be explained. Conventionally, the semiconductor wafer 1 is transported by a handler to the position shown in FIG. 2B, and when the handler releases the semiconductor wafer 1, it is moved to the second position.
The situation was as shown in Figure C.

よってハンドラーが水平でない場合、半導体ウェハー1
はトレー3上へ斜めに落下することになり、パーティク
ルを発生させていた。そこで本発明のウェハー搬送機構
ではトレー3が第2図Aの状態でトレー3から3本のビ
ンを出し、同図Bの様にトレー3が水平になったところ
でオートロボットハンドラーによって半導体ウェハー1
の裏面がチャックされキャリアからトレー3のビン上へ
搬送されてくる。半導体ウェハー1を置いたロボットハ
ンドラーは次のキャリア溝の半導体ウェハー1をチャッ
クし、ビン2が出て水平になったトレー3へ搬送して行
く。また第2図Bの状態のビン2はゆっくりとトレー3
の中へ収納され、トレー表面へ半導体ウェハー1がセッ
トされる。これにより半導体ウェハーの落下による膜の
削れはなく、搬送時のパーティクルを減少させることが
できる。
Therefore, if the handler is not horizontal, the semiconductor wafer 1
fell diagonally onto tray 3, generating particles. Therefore, in the wafer transport mechanism of the present invention, three bins are taken out from the tray 3 in the state shown in FIG. 2A, and when the tray 3 becomes horizontal as shown in FIG.
The back side of the bottle is chucked and the bottle is transported from the carrier onto the bin on the tray 3. The robot handler that placed the semiconductor wafer 1 chucks the semiconductor wafer 1 in the next carrier groove and transports it to the tray 3 from which the bin 2 has come out and is now horizontal. In addition, the bottle 2 in the state shown in Fig. 2B is slowly moved to the tray 3.
The semiconductor wafer 1 is placed on the surface of the tray. This prevents the film from being scraped due to falling of the semiconductor wafer, and particles during transportation can be reduced.

第3図は本発明の第2の実施例の装置のアンローダ−側
のトレー3を横から見た場合の図である。第1の実施例
の時とは逆であり、トレー3がアンローダ側へ近づくと
膜成長済の半導体ウェハー1は再びトレー中のビン2に
よりbc■〕はど持ち上げられEの位置でアンローダ−
用のオートロボットハンドラーに半導体ウェハー裏面を
真空チャックされアンローダーのキャリアへ収納される
。この実施例ではアンロード時、半導体ウェハーを直接
つかんで搬送を行わないので、半導体ウェハー搬送時の
パーティクルを減少させることができる。
FIG. 3 is a side view of the tray 3 on the unloader side of the apparatus according to the second embodiment of the present invention. This is opposite to the case of the first embodiment, and when the tray 3 approaches the unloader side, the semiconductor wafer 1 on which the film has been grown is again lifted up by the bottle 2 in the tray, and is moved to the unloader at the position E.
The backside of the semiconductor wafer is vacuum chucked by an automatic robot handler and then stored in the unloader's carrier. In this embodiment, the semiconductor wafer is not directly gripped and transported during unloading, so particles can be reduced when the semiconductor wafer is transported.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体ウェハーをキャリ
ア、トレー間で搬送する時にトレー中のビンを出させて
それにより半導体ウェハーの受は渡しを容易に行うこと
ができ、半導体ウェハー搬送に伴うパーティクルの発生
を減少させることができる効果がある。
As explained above, the present invention allows the bottle in the tray to be taken out when the semiconductor wafer is transferred between the carrier and the tray, thereby making it possible to easily receive and transfer the semiconductor wafer, and to reduce particles accompanying the transfer of the semiconductor wafer. It has the effect of reducing the occurrence of.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明である半導体ウェハー搬送機構のトレー
の縦断面図、第2図はローダ−側のトレーの側面図、第
3図はアンローダ−側のトレーの側面図である。 1・・・・・・半導体ウェハー 2・・・・・・ビン、
3・・・・・・トレー 4・・・・・・トレーホルダー
、5・・・・・・レール、6・・・・・・ローラー 7
・・・・・・ベルト取付部、8・・・・・・ベルト。
FIG. 1 is a longitudinal sectional view of a tray of a semiconductor wafer transfer mechanism according to the present invention, FIG. 2 is a side view of the tray on the loader side, and FIG. 3 is a side view of the tray on the unloader side. 1... Semiconductor wafer 2... Bin,
3...Tray 4...Tray holder, 5...Rail, 6...Roller 7
...Belt attachment part, 8...Belt.

Claims (2)

【特許請求の範囲】[Claims] (1)ウェハー支持板の加熱機構部と、ウェハー搬送機
構及び膜形成機構部とを有して構成される常圧気相成長
装置において、ウェハー搬送機構がウェハー支持板に埋
設されているウェハー押し上げ機構と、ウェハー転送機
構とを有して構成されていることを特徴とする常圧気相
成長装置。
(1) In a normal pressure vapor phase growth apparatus that includes a heating mechanism section for a wafer support plate, a wafer transport mechanism, and a film forming mechanism section, the wafer transport mechanism is embedded in the wafer support plate. and a wafer transfer mechanism.
(2)ウェハー押し上げ機構で半導体ウェハーを水平に
上下させることを特徴とする特許請求の範囲第(1)項
記載の常圧気相成長装置。
(2) The atmospheric pressure vapor phase growth apparatus according to claim (1), wherein the semiconductor wafer is horizontally raised and lowered by a wafer lifting mechanism.
JP2079223A 1990-03-28 1990-03-28 Atmospheric pressure vapor deposition equipment Expired - Lifetime JP3060477B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2079223A JP3060477B2 (en) 1990-03-28 1990-03-28 Atmospheric pressure vapor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2079223A JP3060477B2 (en) 1990-03-28 1990-03-28 Atmospheric pressure vapor deposition equipment

Publications (2)

Publication Number Publication Date
JPH03278521A true JPH03278521A (en) 1991-12-10
JP3060477B2 JP3060477B2 (en) 2000-07-10

Family

ID=13683917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2079223A Expired - Lifetime JP3060477B2 (en) 1990-03-28 1990-03-28 Atmospheric pressure vapor deposition equipment

Country Status (1)

Country Link
JP (1) JP3060477B2 (en)

Also Published As

Publication number Publication date
JP3060477B2 (en) 2000-07-10

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