JPH03278510A - Manufacture of high-permeability magnetic thin film - Google Patents
Manufacture of high-permeability magnetic thin filmInfo
- Publication number
- JPH03278510A JPH03278510A JP7705190A JP7705190A JPH03278510A JP H03278510 A JPH03278510 A JP H03278510A JP 7705190 A JP7705190 A JP 7705190A JP 7705190 A JP7705190 A JP 7705190A JP H03278510 A JPH03278510 A JP H03278510A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- thin film
- power
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000035699 permeability Effects 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は高周波領域で使用されるインダクタ、トランス
などの磁心材料に用いられる高透磁率磁性薄膜の製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a high permeability magnetic thin film used as a magnetic core material for inductors, transformers, etc. used in high frequency regions.
[従来の技術]
磁気素子のマイクロ化に伴う問題点として励磁周波数を
増した時、周波数特性が劣化しない条件として厚さが極
度の一様性を持ち、かつ均一な材質と磁気特性を保持す
ることが重要となる。一般にスパッタ法で成膜する際、
採られる方法とじてチャンバー内を所定の真空度に到達
させた後、基板エツチング、プレスパツタなどの手順を
踏んだ後、本スパッタを開始する。ここで一般には、旦
プラズマを発生させると、その後はスパッタ終了まで出
来るかぎり安定なプラズマ状態を持続させるための条件
を選択する。すなわち、スパッタ条件として、主に、ス
パッタ電力、設定ガス圧、流量などの変動を極力少なく
するための監視、制御を実施する。さらに、新規改良が
継続しているスパッタ装置は、これらの成膜条件の変動
要因を、自動的に取り除くために種々の改良、新機能を
付加させようと開発研究がすすめられている。いずれに
しろ、−旦スバッタを開始すると終了するまでスパッタ
電力は、一定の状態にして成膜するのが従来の一般的な
方法になっている。[Prior art] One of the problems associated with miniaturization of magnetic elements is that when the excitation frequency is increased, the condition that the frequency characteristics do not deteriorate is that the thickness must be extremely uniform, and the material and magnetic characteristics must be uniform. That is important. Generally, when forming a film by sputtering,
The method used is to reach a predetermined degree of vacuum in the chamber, and after steps such as substrate etching and press sputtering, the main sputtering is started. Generally, once plasma is generated, conditions are selected to maintain a plasma state as stable as possible until the end of sputtering. That is, as sputtering conditions, monitoring and control are mainly performed to minimize fluctuations in sputtering power, set gas pressure, flow rate, and the like. Furthermore, new and improved sputtering equipment continues to be developed and research is being carried out to add various improvements and new functions in order to automatically eliminate these fluctuation factors in film forming conditions. In any case, the conventional and common method is to form a film by keeping the sputtering power constant once sputtering is started until it ends.
[発明が解決しようとする課1i]
このような一般的な方法で得られた薄膜は、第1図(b
)の薄膜構造モデルで示すごとく、通常、基板11の面
から薄膜12の堆積が進行するにつれて、基板11の面
に近い側の薄膜12と堆積後期の薄膜12では構造が不
均一になることが十分予測できる。すなわち、成膜初期
においては極微細構造が形成され、堆積にともなって粗
大構造化されることが予測される。成膜後の薄膜12は
通常熱処理によって成膜時の歪みなどが緩和されるが、
この熱処理によっても不均一構造は十分解消されないで
残存し、その結果薄膜の磁気特性の向上は小さい。[Issue 1i to be solved by the invention] The thin film obtained by such a general method is shown in Fig. 1 (b
), as the deposition of the thin film 12 progresses from the surface of the substrate 11, the structure of the thin film 12 closer to the surface of the substrate 11 and the thin film 12 in the later stages of deposition may become non-uniform. It's quite predictable. That is, it is predicted that an extremely fine structure will be formed in the initial stage of film formation, and that it will become a coarse structure as the film is deposited. After the thin film 12 is formed, distortions during film formation are usually alleviated by heat treatment.
Even with this heat treatment, the nonuniform structure remains without being sufficiently eliminated, and as a result, the improvement in the magnetic properties of the thin film is small.
本発明は上記の事情に鑑みてなされたもので、成膜時に
均一構造を得ることにより、磁気特性を向上し得る高透
磁率磁性薄膜の製造方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a high permeability magnetic thin film that can improve magnetic properties by obtaining a uniform structure during film formation.
[課題を解決するための手段と作用]
本発明はかかる構造の均一化に看目し、従来の構造不均
一がもたらしているのは、成膜初期段階に基板に堆積さ
れる膜の極微細構造に起因することに鑑み、本発明は、
成膜時の熱発生源として特にスパッタ電力に着目し、ス
パッタ電力の増加にともない、基板温度が上昇する事実
に基づき、特に成膜初期にスパッタ電力を大きく投入し
、堆積が進むに伴って生じる温度上昇を考慮して投入電
力を減少させるという、傾斜投入電力の方法を採用する
ことによって、従来より優れた高透磁率磁性薄膜が得ら
れたものである。[Means and effects for solving the problem] The present invention focuses on making the structure uniform, and the conventional structure non-uniformity is caused by ultrafine fineness of the film deposited on the substrate in the initial stage of film formation. In view of the structure, the present invention
We particularly focused on sputtering power as a source of heat generation during film formation, and based on the fact that as sputtering power increases, the substrate temperature rises.In particular, when a large amount of sputtering power is input in the early stage of film formation, and as the deposition progresses, this phenomenon occurs. A magnetic thin film with higher magnetic permeability than the conventional one was obtained by adopting a method of ramping power input in which the power input is reduced in consideration of temperature rise.
[実施例] 以下、本発明の実施例を詳細に説明する。[Example] Examples of the present invention will be described in detail below.
本発明の高透磁率磁性薄膜は、高周波領域で優れた軟磁
性を有する材料で、これに適した材料であれば非晶質、
結晶質、或いは非晶質−結晶質混在などの構造は問わな
い。しかしながらこれら磁性薄膜の作成条件としての重
要な材料特性としては、第2図中に示した材料Aのよう
にスパッタ電力量Pによる保磁力Hcの変化が小さいこ
と、あるいは保磁力Hcの温度変化に対する感応性の小
さいことが必要である。これに適した磁性薄膜として代
表的な組成例として、CoNbZr系やCoNbB系な
どがあげられる。The high permeability magnetic thin film of the present invention is a material that has excellent soft magnetism in a high frequency region, and if the material is suitable for this, it can be amorphous,
It does not matter whether the structure is crystalline or a mixture of amorphous and crystalline materials. However, important material properties as a condition for creating these magnetic thin films are that the change in coercive force Hc due to sputtering power P is small, as shown in material A shown in Figure 2, or that the coercive force Hc is sensitive to temperature changes. It is necessary to have low sensitivity. Typical composition examples of magnetic thin films suitable for this purpose include CoNbZr type and CoNbB type.
かかる合金材料をターゲットとしてスパッタ法にて冷却
基板上に成膜を行うが、成膜初期のスパッタ投入電力は
成膜中で最大のものとする。実用的には5W/elf程
度が望ましい。スパッタ投入電力がこれより小さいと所
望の効果が得られない。A film is formed on a cooled substrate by sputtering using such an alloy material as a target, and the sputtering input power at the initial stage of film formation is set to be the maximum during film formation. Practically speaking, approximately 5 W/elf is desirable. If the sputtering power is smaller than this, the desired effect cannot be obtained.
初期のスパッタ投入電力が大きすぎても効果は減少する
が、初期堆積膜構造の適切サイズからの逸脱によるもの
と思われる。また、初期のスパッタ投入電力が5 W
/ c12程度であっても、この一定のスパッタ投入電
力量で所望膜厚まで成膜した場合は磁気特性は低下する
が、これは堆積上部構造の粗大化が生じた結果と考えら
れる。いずれにしても、スパッタ開始時に適切な大きさ
のスパッタ投入電力を、成膜中で最も大きくし、以後、
漸次スパッタ投入電力を減少させていく傾斜電力投入を
行うのが本発明の特徴である。The effect also decreases if the initial sputtering input power is too high, but this is probably due to deviation from the appropriate size of the initially deposited film structure. In addition, the initial sputtering power was 5 W.
/c12, when a film is formed to a desired thickness with this constant input power for sputtering, the magnetic properties deteriorate, but this is considered to be the result of coarsening of the deposited upper structure. In any case, the appropriate amount of sputter input power is set at the start of sputtering to be the highest during film formation, and from then on,
A feature of the present invention is to perform ramped power input in which the sputtering power is gradually reduced.
第1図(a)は本発明に係る傾斜電力投入スパッタ法で
成膜されると予測される磁性薄膜の構造モデルで、基板
21に堆積した磁性薄膜22は均一構造になっている。FIG. 1(a) is a structural model of a magnetic thin film expected to be formed by the gradient power input sputtering method according to the present invention, and the magnetic thin film 22 deposited on the substrate 21 has a uniform structure.
以下に本発明の具体的実施例を示す。Specific examples of the present invention are shown below.
◎ 具体的実施例
供試ターゲラとしては
(CO0,94N b O,06) 90B IQを用
い、成膜装置としてはRFスパッタ装置にて次の条件で
成膜した。◎ Specific Examples A (CO0,94N b O,06) 90B IQ was used as a test target, and a film was formed using an RF sputtering apparatus under the following conditions.
1)従来法 スパッタ電力 5.2W/c腸22)
〃 3.9W/am”3)本発明
法 ” 5.2W/cs’→2.6W/e
■2
スパッタ投入電力以外の条件は一定にし、厚膜2μmと
した。成膜後に300℃の回転磁場処理を施した。その
結果を第3図に比初透磁率μi(印加磁界5m0e)と
周波数f (kHz)の関係で示した。1) Conventional method Sputtering power 5.2W/c22)
〃 3.9W/am"3) Present invention method"5.2W/cs'→2.6W/e
(2) Conditions other than the sputtering input power were kept constant, and the thickness of the film was 2 μm. After film formation, a rotating magnetic field treatment at 300° C. was performed. The results are shown in Figure 3 as a relationship between specific initial magnetic permeability μi (applied magnetic field 5m0e) and frequency f (kHz).
第3図より本発明プロセスである傾斜電力投入法によっ
て優れた比初透磁率μi並びに周波数特性を持つ薄膜を
得ることが明白である。It is clear from FIG. 3 that a thin film having excellent specific initial permeability μi and frequency characteristics can be obtained by the gradient power input method which is the process of the present invention.
[発明の効果]
以上述べたように、本発明によれば磁性合金薄膜をスパ
ッタ法で作成するにあたって、成膜初期のスパッタ投入
電力を成膜中で最も大きくし、漸次減少させていく傾斜
電力投入法により、高透磁率を持つ磁性合金薄膜が得ら
れることが分かり、この工業的意義、産業界に及ぼす効
果は大きい。[Effects of the Invention] As described above, according to the present invention, when creating a magnetic alloy thin film by sputtering, the sputtering input power is made the highest at the initial stage of film formation and is gradually decreased during film formation. It has been found that a magnetic alloy thin film with high magnetic permeability can be obtained by the injection method, and this has great industrial significance and effects on the industrial world.
第1図(a)は本発明に基づく傾斜電力投入スパッタ法
により予測される磁性薄膜構造の一例を示す模式図、第
1図(b)は従来のスパッタ法により予測される磁性薄
膜構造を示す模式図、第2図は各磁性薄膜材料による保
磁力Hcのスパッタ電力依存性の相違の一例を示す特性
図、第3図は本発明に基づく傾斜電力投入スパッタ法と
従来スパッタ法により作成された磁性薄膜の透磁率およ
びその周波数依存性を示す特性図である。
21・・・基板、22・・・磁性薄膜。FIG. 1(a) is a schematic diagram showing an example of the magnetic thin film structure predicted by the gradient power input sputtering method based on the present invention, and FIG. 1(b) is a schematic diagram showing the magnetic thin film structure predicted by the conventional sputtering method. A schematic diagram, FIG. 2 is a characteristic diagram showing an example of the difference in sputtering power dependence of coercive force Hc for each magnetic thin film material, and FIG. FIG. 2 is a characteristic diagram showing the magnetic permeability of a magnetic thin film and its frequency dependence. 21...Substrate, 22...Magnetic thin film.
Claims (1)
、成膜時のスパッタ投入電力を成膜初期に大きくし、以
後、漸次スパッタ投入電力を減じながら傾斜電力投入を
行うことを特徴とする高透磁率磁性薄膜の製造方法。In manufacturing a high magnetic permeability magnetic thin film by sputtering, the sputtering power input during film formation is increased at the initial stage of film formation, and thereafter, the sputtering power is gradually reduced while ramping power input is performed. Method for manufacturing magnetic thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7705190A JPH03278510A (en) | 1990-03-28 | 1990-03-28 | Manufacture of high-permeability magnetic thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7705190A JPH03278510A (en) | 1990-03-28 | 1990-03-28 | Manufacture of high-permeability magnetic thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03278510A true JPH03278510A (en) | 1991-12-10 |
Family
ID=13622989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7705190A Pending JPH03278510A (en) | 1990-03-28 | 1990-03-28 | Manufacture of high-permeability magnetic thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03278510A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05209263A (en) * | 1992-01-13 | 1993-08-20 | Nec Corp | Manufacture of sputtered alloy film and apparatus therefor |
-
1990
- 1990-03-28 JP JP7705190A patent/JPH03278510A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05209263A (en) * | 1992-01-13 | 1993-08-20 | Nec Corp | Manufacture of sputtered alloy film and apparatus therefor |
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