JPH03278434A - Polishing holder for semiconductor wafer - Google Patents
Polishing holder for semiconductor waferInfo
- Publication number
- JPH03278434A JPH03278434A JP2079792A JP7979290A JPH03278434A JP H03278434 A JPH03278434 A JP H03278434A JP 2079792 A JP2079792 A JP 2079792A JP 7979290 A JP7979290 A JP 7979290A JP H03278434 A JPH03278434 A JP H03278434A
- Authority
- JP
- Japan
- Prior art keywords
- holder
- wafer
- polishing
- vacuum
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 75
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 7
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Jigs For Machine Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
利用産業分野
この発明は、半導体ウェーハの研磨用ホルダーの改良に
係り、セラミックス類のホルダー本体に、ウェーハを載
置して真空吸着するため特定樹脂製のウェーハチャック
部を設け、吸着面をラップ盤で直接ラッピングして形成
した共すり面となし、ウェーハの脱着を容易にしかつ極
めて高平坦度で研磨できる半導体ウェーハの研磨用ホル
ダーに関する。[Detailed Description of the Invention] Field of Application The present invention relates to the improvement of a holder for polishing semiconductor wafers, and a wafer chuck part made of a specific resin is installed on the holder body made of ceramics for vacuum suction of the wafer. The present invention relates to a holder for polishing semiconductor wafers, which has a suction surface formed by direct lapping with a lapping machine and has a co-rubbing surface, which facilitates the attachment and detachment of the wafer and which can be polished to an extremely high degree of flatness.
背景技術
半導体ウェーハは、その製造に際してインゴットから所
要厚みの薄板に切り出されたのち、高平坦度の鏡面を得
るため研磨装置で、ダイヤモンド砥粒による研磨やメカ
ノケミカル研磨が実施されている。BACKGROUND ART When semiconductor wafers are manufactured, they are cut into thin plates of a required thickness from an ingot, and then polished with diamond abrasive grains or mechanochemically polished using a polishing device to obtain a highly flat mirror surface.
従来の研磨装置では、ステンレス鋼、ガラスあるいはア
ルミ製からなる平坦な円板状の研磨用ホルダーに複数の
ウェーハを接着剤にて固着し、研磨中保持させている。In a conventional polishing apparatus, a plurality of wafers are fixed with an adhesive to a flat disk-shaped polishing holder made of stainless steel, glass, or aluminum, and held during polishing.
従来の研磨用ホルダーは、平坦なため研磨中、ラップ盤
とホルダーの間隙が小さくなる。従って、ウェーハに作
用する研磨液量が少なくなり、くもりが発生し易くなる
。Conventional polishing holders are flat, which reduces the gap between the lapping machine and the holder during polishing. Therefore, the amount of polishing liquid acting on the wafer decreases, making it more likely that clouding will occur.
そこで、ウェーハを載置する部位を突出させたホルダー
が提案（特開昭６４−５００５０号）されている。Therefore, a holder with a protruding portion on which a wafer is placed has been proposed (Japanese Patent Laid-Open No. 64-50050).
また、逆にウェーハを載置しない中央部分を凹ませ、か
つホルダー表裏面の温度差を考慮してセラミックス製と
なしたホルダーが提案（特開平１゜３０１５６０号）さ
れている。On the other hand, a holder has been proposed (Japanese Unexamined Patent Application Publication No. 1993-301560) in which the central portion where the wafer is not placed is recessed and the holder is made of ceramics in consideration of the temperature difference between the front and back surfaces of the holder.
しかし、上記のホルダーは、研磨液の供給は良好になる
が、従来と同様に接着剤を熱溶解してウェーハをホルダ
ーに貼り付け、また、ウェーハの研磨後には溶剤による
ホルダーの洗浄が必要であり、ウェーハ研磨に際したに
複雑な工程が必要となる。また、ウェーハ接着部に異物
が入ると傷やエクポと呼ばれる欠陥の発生原因となる。However, although the above holder provides a good supply of polishing liquid, it requires hot melting of the adhesive to attach the wafer to the holder, and the holder must be cleaned with a solvent after polishing the wafer. However, a complicated process is required for wafer polishing. Furthermore, if foreign matter enters the wafer bonding area, it may cause scratches or defects called expos.
また、従来の研磨用ホルダーは、ウェーハ面内での平坦
度の制御ができず、平坦な円板状のアルミ製ホルダーの
場合、得られる平坦度が平均８ｐｍ程度であり、平坦度
の向上が強く望まれていた。In addition, with conventional polishing holders, it is not possible to control the flatness within the wafer surface, and in the case of a flat disc-shaped aluminum holder, the average flatness obtained is about 8 pm, and it is difficult to improve the flatness. It was strongly desired.
この発明は、研磨用ホルダーのかかる現状に鑑み、ウェ
ーハの脱着を容易にしかつ極めて高平坦度で研磨できる
半導体ウェーハの研磨用ホルダーの提供を目的としてい
る。In view of the current state of polishing holders, it is an object of the present invention to provide a holder for polishing semiconductor wafers, which facilitates the attachment and detachment of wafers and allows polishing with extremely high flatness.
発明の概要
この発明は、
研磨用ホルダー本体がセラミックスからなり、前記ホル
ダー上面に、ウェーハを載置するウェーハチャック部を
突設し、
かつウェーハチャック並びにホルダー本体に、ウェーハ
を真空吸着するためのバキューム路を配設したことを特
徴とする半導体ウェーハの研磨用ホルダーである。Summary of the Invention This invention provides a polishing holder body made of ceramics, a wafer chuck portion for placing a wafer protruding from the top surface of the holder, and a vacuum for vacuum suctioning the wafer to the wafer chuck and the holder body. This is a holder for polishing semiconductor wafers, which is characterized by being provided with a channel.
また、この発明は、前記構成において、ウェーハチャッ
ク部がアクリルまたはポリカーボネートからなり、ウェ
ーハを載置する表面形状が、研磨装置に装着後にウェー
ハを載置することなく研磨盤で直接ラッピングして形成
された共ずり面であることを特徴とする半導体ウェーハ
の研磨用ホルダーである。Further, in the above structure, the wafer chuck part is made of acrylic or polycarbonate, and the surface shape on which the wafer is placed is formed by direct lapping with a polishing plate without placing the wafer on the polishing apparatus. This is a holder for polishing semiconductor wafers, which is characterized by having both shear surfaces.
発明の図面に基づく開示
第１図はこの発明による半導体ウェーハの研磨用ホルダ
ーの縦断説明図である。DISCLOSURE OF THE INVENTION BASED ON THE DRAWINGS FIG. 1 is a longitudinal sectional view of a holder for polishing semiconductor wafers according to the present invention.
構成
研磨用ホルダーは第１図示すように、セラミックスから
なる円板状のホルダー（１）の上面に、所要数のウェー
ハチャック（２）を固着し、ホルダー（１）内からウェ
ーハチャック（２）の上面に開口するバキューム路（３
）を配設した構成からなる。Structure As shown in Figure 1, the polishing holder has a required number of wafer chucks (2) fixed to the top surface of a disc-shaped holder (1) made of ceramic, and the wafer chucks (2) are inserted from inside the holder (1). Vacuum path (3
).
ウェーハチャック（２）上面には、図示しないパッドが
敷設され、所要直径のバキューム路（３）の開口部が、
所要パターンで配設されている。A pad (not shown) is laid on the top surface of the wafer chuck (2), and the opening of the vacuum path (3) with the required diameter is
They are arranged in the required pattern.
ホルダー（１）の下面中央に設けられたバキューム路（
３）は、図示しない研磨装置への装着に際して、ロータ
リージヨイントを介して所要のバキュームポンプに配管
接続しである。A vacuum path (
3) is a piping connection to a necessary vacuum pump via a rotary joint when mounting it on a polishing device (not shown).
また、この発明によるホルダー（１）は、ウェーハ（４
）を真空吸着するため、バキューム路（３）が配設され
ているため、本体厚みは容易には弾性変形し難いように
十分に考慮した厚みからなる。Further, the holder (1) according to the present invention includes a wafer (4
), the vacuum path (3) is provided, so the thickness of the main body is sufficiently designed to prevent it from being easily elastically deformed.
作用効果
研磨のためウェーハをホルダーに固定、離脱させる場合
、この発明によるホルダー（１月よウェーハ（４）を真
空吸着するため、バキュームポンプのオン・オフのみで
容易にでき、ウェーハ（４）の脱着作業を簡略化できる
。Effects When fixing and removing a wafer from the holder for polishing, the holder according to the present invention vacuum-adsorbs the wafer (4), so it can be easily done by simply turning on and off the vacuum pump. Simplifies attachment and detachment work.
ウェーハ（４）はホルダー（１）の上面に突設されたウ
ェーハチャック（２）に載置されるため、研磨液のウェ
ーハへの導入が容易となる。Since the wafer (4) is placed on the wafer chuck (2) protruding from the upper surface of the holder (1), the polishing liquid can be easily introduced into the wafer.
ホルダー（１）は、アルミナ、ジルコニアなどのセラミ
ックスで形成することにより、従来のアルミ製ホルダー
の如き研磨中、上面側の温度上昇に伴い発生する反りが
防止され、研磨面の平坦度が確保できる。The holder (1) is made of ceramics such as alumina and zirconia, which prevents warping that occurs during polishing as the temperature rises on the top side, unlike conventional aluminum holders, and ensures the flatness of the polished surface. .
ホルダー（１）の上面に突設するウェーハチャック（２
）は、本体と同様にセラミックスで形成することもでき
るが、後記の共すり面を形成する場合は、アクリルまた
はポリカーボネートで形成する必要がある。The wafer chuck (2) protrudes from the top of the holder (1).
) can be made of ceramics as well as the main body, but if a co-rubbing surface (described later) is to be formed, it must be made of acrylic or polycarbonate.
ウェーハチャック（２）のウェーハ載置面は、真空吸着
した後、研磨中にウェーハ（４）の面内に作用する力が
均一になるような形状にする必要があり、前記形状にす
るための一つの方法に、後述する共ずり面を形成する方
法がある。The wafer mounting surface of the wafer chuck (2) must be shaped so that the force acting on the surface of the wafer (4) is uniform during polishing after vacuum suction. One method is to form a coplanar surface, which will be described later.
共すり面を形成する方法は、ウェーハチャック（２）に
直接、研磨盤を接触させて、研磨液を供給しながら研磨
盤とウェーハチャック（２）を相対運動させるもので、
換言するとウェーハチャック（２）のウェーハ載置面を
直接ラッピングすることにより、研磨中にウェーハの面
内に作用する力が均一になるような形状となすことがで
きる。The method of forming the co-grinding surface is to bring the polishing disk into direct contact with the wafer chuck (2) and move the polishing disk and the wafer chuck (2) relative to each other while supplying polishing liquid.
In other words, by directly lapping the wafer mounting surface of the wafer chuck (2), it is possible to form a shape that makes the force acting on the wafer surface uniform during polishing.
また、ウェーハ（４）は共ずり面を形成したウェーハチ
ャック（２）に真空吸着保持されているため、研磨中の
研磨盤圧力がより均一に作用して、研磨後の平坦度が良
くなる。Further, since the wafer (4) is vacuum-adsorbed and held by the wafer chuck (2) having a coplanar surface, the pressure of the polishing disk during polishing acts more uniformly, improving the flatness after polishing.
ウェーハチャック（２）をアクリルまたはポリカーボネ
ートで形成する理由は、ステンレス鋼、ガラスあるいは
アルミ、または塩化ビニルなどの合成樹脂などでは、前
記共すり方法による共ずつ面が形成されないか、あるい
は形状を保持できず、さらにはウェーハを傷つける恐れ
があるためであり、アクリルまたはポリカーボネートは
硬度等が最適であり、ウェーハを汚染したり傷つけるこ
とがない。The reason why the wafer chuck (2) is made of acrylic or polycarbonate is that with stainless steel, glass, aluminum, or synthetic resins such as vinyl chloride, the same surface cannot be formed by the above-mentioned rubbing method, or the shape cannot be maintained. This is because there is a risk of damaging the wafer, and acrylic or polycarbonate has optimal hardness and will not contaminate or damage the wafer.
発明の効果
要するに、この発明によるホルダー（１）は、ａ、ウェ
ーハチャック（２）が突出しているため、ホルダー（１
）と研磨盤の間隔が広くなり、研磨液のウェーハ（４）
に対する導入が容易となる。よって、良好な研磨面が得
られる。Effects of the Invention In short, the holder (1) according to the present invention has a protruding wafer chuck (2).
) and the polishing disk are widened, and the wafer (4) in the polishing liquid is
This makes it easy to introduce. Therefore, a good polished surface can be obtained.
ｂ、ホルダー（１）がセラミックスで形成されているた
め、研磨熱による反りが少なく、良好な研磨面が得られ
る。b. Since the holder (1) is made of ceramics, there is little warpage due to polishing heat, and a good polished surface can be obtained.
Ｃ，ウェーハチャック（２）が共すり面で、研磨に最適
なな形状をしており、かつ真空吸着するため、研磨中に
、ウェーハ面内に均一な力が作用して適正な精度が得ら
れる。C. The wafer chuck (2) has a coplanar surface that is ideal for polishing, and because it is vacuum-adsorbed, a uniform force is applied within the wafer surface during polishing, achieving appropriate precision. It will be done.
ｄ、ウェーハチャック（２）はパッド及びバキューム路
を有するチャックによりなっているため、異物がウェー
ハ付着部に入っても、傷及びエクポが発生し難い。d. Since the wafer chuck (2) is a chuck having a pad and a vacuum path, even if foreign matter enters the wafer attachment area, scratches and expo are unlikely to occur.
ｅ、真空吸着により、従来のような接着剤使用による複
雑な作業がなくなる。e. Vacuum suction eliminates the complicated work of using adhesives as in the past.
実施例
ホルダー本体がアルミナセラミックからなり直径が３２
０ｍｍで厚さが１５ｍｍと３０ｍｍの２種類で、アクリ
ル製のウェーハチャックを設けて共ずり面を形成した場
合と設けない場合の種々の構成からなるこの発明による
ホルダーを用意した。The holder body of the embodiment is made of alumina ceramic and has a diameter of 32 mm.
Holders according to the present invention were prepared in two types with a thickness of 0 mm and a thickness of 15 mm and 30 mm, with various configurations in which an acrylic wafer chuck was provided to form a shearing surface, and in which the holder was not provided with an acrylic wafer chuck.
比較のための従来ホルダーには、アルミ材質からなり平
坦な３２０ｍｍΦのホルダーを用意した。As a conventional holder for comparison, a flat holder made of aluminum and having a diameter of 320 mm was prepared.
上記各種のホルダーを用いて、多数の半導体ウェーハを
メカノケミカル研磨した後、各ウェーハの平坦度を測定
した。本発明はバキューム圧を一５５０ｍｍＨｇに設定
した。After mechanochemically polishing a large number of semiconductor wafers using the various holders described above, the flatness of each wafer was measured. In the present invention, the vacuum pressure was set at -550 mmHg.
従来のアルミ製ホルダーの場合、平均平坦度は８１１ｍ
であったが、この発明の場合、厚さ３０ｍｍ、つ二一ハ
チャックに共すり面を設けない場合でも、第２図ａに示
す如く、平均平坦度は５．３１１ｍであり、共ずつ面を
設けると、第２図すに示す如く、平均平坦度は３．Ｑｍ
と著しく向上する。In the case of a conventional aluminum holder, the average flatness is 811m
However, in the case of the present invention, even when the thickness is 30 mm and no coplanar surfaces are provided on the two-piece chuck, the average flatness is 5.311 m, as shown in Figure 2a. When provided, the average flatness is 3.5 mm, as shown in Figure 2. Qm
and significantly improved.
ともにウェーハチャックに共ずり面を設け、厚さが１５
ｍｍ（第３図ａ）と３０ｍｍ（第３図ｂ）と異なる場合
は、厚さが１５ｍｍでは平均平坦度は４．９ｐｍである
のに対して、ホルダーの厚さを３０ｍｍ程度にするとバ
キューム圧による弾性変形量を極めて小さくでき、平均
平坦度は３．Ｑｍに向上している。Both have a sliding surface on the wafer chuck, and the thickness is 15 mm.
mm (Fig. 3 a) and 30 mm (Fig. 3 b), the average flatness is 4.9 pm when the thickness is 15 mm, but when the thickness of the holder is about 30 mm, the vacuum pressure The amount of elastic deformation caused by this can be extremely small, and the average flatness is 3. It has improved to Qm.
第１図はこの発明による半導体ウェーハの研磨用ホルダ
ーの縦断説明図である。
第２図ａ、ｂ、第３図ａ、ｂはこの発明による半導体ウ
ェーハの研磨用ホルダーを用いた研磨の結果、ウェーハ
の研磨平坦度の分布示すグラフである。
１・・・ホルダー、２・・・ウェーハチャック、３・・
・バキューム路、４・・・ウェーハ。
第２図
（ａ）
（ｂ）
（μｍ）FIG. 1 is a longitudinal sectional view of a holder for polishing semiconductor wafers according to the present invention. FIGS. 2a and 2b and 3a and 3b are graphs showing the distribution of polishing flatness of wafers as a result of polishing using the semiconductor wafer polishing holder according to the present invention. 1...Holder, 2...Wafer chuck, 3...
- Vacuum path, 4... wafer. Figure 2 (a) (b) (μm)
Claims (1)
ダー上面に、ウェーハを載置するウェーハチャック部を
突設し、 かつウェーハチャック並びにホルダー本体に、ウェーハ
を真空吸着するためのバキューム路を配設したことを特
徴とする半導体ウェーハの研磨用ホルダー。 ２ ウェーハチャック部がアクリルまたはポリカーボネート
からなり、ウェーハを載置する表面形状が、研磨装置に
装着後にウェーハを載置することなく研磨盤で直接ラッ
ピングして形成された共ずり面であることを特徴とする
請求項１記載の半導体ウェーハの研磨用ホルダー。[Claims] 1. A polishing holder body is made of ceramics, and a wafer chuck portion for placing a wafer is provided protruding from the upper surface of the holder, and a vacuum for vacuum suctioning the wafer to the wafer chuck and the holder body. A holder for polishing semiconductor wafers, which is characterized by being provided with a groove. 2. The wafer chuck part is made of acrylic or polycarbonate, and the surface shape on which the wafer is placed is a flat surface formed by direct lapping with a polishing plate without placing the wafer on the polishing device. A holder for polishing a semiconductor wafer according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079792A JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079792A JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03278434A true JPH03278434A (en) | 1991-12-10 |
| JPH06103679B2 JPH06103679B2 (en) | 1994-12-14 |
Family
ID=13700067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2079792A Expired - Fee Related JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103679B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| JP2011023708A (en) * | 2009-06-17 | 2011-02-03 | Tokyo Seimitsu Co Ltd | Wafer holding apparatus and wafer processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162455A (en) * | 1986-06-06 | 1987-07-18 | Hitachi Ltd | Wafer grinding method |
| JPS63160341A (en) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | System for grinding rear of semiconductor device |
-
1990
- 1990-03-27 JP JP2079792A patent/JPH06103679B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162455A (en) * | 1986-06-06 | 1987-07-18 | Hitachi Ltd | Wafer grinding method |
| JPS63160341A (en) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | System for grinding rear of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| US5527209A (en) * | 1993-09-09 | 1996-06-18 | Cybeq Systems, Inc. | Wafer polisher head adapted for easy removal of wafers |
| JP2011023708A (en) * | 2009-06-17 | 2011-02-03 | Tokyo Seimitsu Co Ltd | Wafer holding apparatus and wafer processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06103679B2 (en) | 1994-12-14 |
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| LAPS | Cancellation because of no payment of annual fees |