JP2002217145A - Chuck for polishing apparatus - Google Patents

Chuck for polishing apparatus

Info

Publication number
JP2002217145A
JP2002217145A JP2001007391A JP2001007391A JP2002217145A JP 2002217145 A JP2002217145 A JP 2002217145A JP 2001007391 A JP2001007391 A JP 2001007391A JP 2001007391 A JP2001007391 A JP 2001007391A JP 2002217145 A JP2002217145 A JP 2002217145A
Authority
JP
Japan
Prior art keywords
chuck
semiconductor wafer
polishing
chuck base
back pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001007391A
Other languages
Japanese (ja)
Inventor
Koichi Hatano
光一 波田野
Fumiki Kishida
文樹 岸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapmaster SFT Corp
Original Assignee
Lapmaster SFT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lapmaster SFT Corp filed Critical Lapmaster SFT Corp
Priority to JP2001007391A priority Critical patent/JP2002217145A/en
Publication of JP2002217145A publication Critical patent/JP2002217145A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To overcome a problem that although a conventional chuck has a cushioned property by using a porous ceramic or a rubber-like material, if a semiconductor wafer has slight tapers or irregularities in its thickness, a polish having an ultra-high accuracy uniformity cannot be realized since they are directly reflected to the polishing accuracy, and moreover, polishing sags occur in the peripheral edge of the semiconductor wafer. SOLUTION: This chuck for a polishing apparatus comprises a chuck base 1 having a concave portion on the undersurface, a gelatinous layer 2 arranged on the bottom of the concave portion of the chuck base 1, a chuck plate 3 laminated on the gelatinous layer 2, a back pad 4 laminated on the chuck plate 3, a semiconductor wafer W attached on the back pad 4, a wafer holder 5 arranged in the periphery of the semiconductor wafer W, an air bag 6 inserted between the wafer holder 5 and an edge of the chuck base 1 and an air supply route 7 arranged in the chuck base 1 connecting the air bag 6 with an air supply source.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ラッピングマシーン、
ポリシングマシーン等の研磨装置のスピンドル軸の下端
に半導体ウエハを貼着させるチャックに関するものであ
って、更に詳細には、研磨加工中の半導体ウエハの裏面
からの押圧圧力を一定圧にして、超高精度の均一性を有
したし研磨加工を施すと共に、研磨加工中に外周縁に現
われる研磨だれを皆無とする研磨装置用チャックに関す
るものである。
The present invention relates to a wrapping machine,
The present invention relates to a chuck for attaching a semiconductor wafer to a lower end of a spindle shaft of a polishing device such as a polishing machine. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chuck for a polishing apparatus which has uniformity of accuracy and is subjected to a polishing process, and eliminates any polishing dripping which appears on an outer peripheral edge during the polishing process.

【0002】[0002]

【従来技術】従来、この種の研磨装置のチャックは各種
開発されて使用されており、近年要求される被研磨体で
ある半導体ウエハは、装着する機器そのものの小型化の
観点からの極薄化であり、生産性の観点からの拡径化で
あり、歩留まりの観点からの全面を超高精度に均一性を
有した平坦加工、鏡面加工であり、極薄化され拡径化さ
れた、且つ、脆性の半導体ウエハを如何に超高精度に仕
上げるかに凌ぎを削っている現状である。
2. Description of the Related Art Conventionally, various kinds of chucks of a polishing apparatus of this kind have been developed and used. Semiconductor wafers to be polished in recent years have become extremely thin from the viewpoint of miniaturization of equipment to be mounted. It is the diameter enlargement from the viewpoint of productivity, the flat surface processing with uniformity with ultra-high accuracy and the mirror surface processing from the viewpoint of the yield, the ultra-thin and enlarged diameter, and At present, the brittle semiconductor wafer is being cut down on how to finish it with ultra-high accuracy.

【0003】[0003]

【解決しようとする課題】然し乍ら、従来のチャックは
ポーラスセラミックやゴム状の素材を用いてクッション
性を持たせたものであるが、半導体ウエハの厚みに僅か
な傾斜や凹凸が有ると、研磨精度にそのまま反映して超
高精度の均一性を有した研磨が不可能と成っており、更
に、半導体ウエハの外周縁に研磨だれが発生して課題を
有していた。
However, the conventional chuck has a cushioning property using a porous ceramic or rubber-like material. However, if the thickness of the semiconductor wafer has a slight inclination or unevenness, the polishing accuracy becomes poor. Therefore, it is impossible to perform polishing with ultra-high accuracy and uniformity, and furthermore, there is a problem that polishing dripping occurs on the outer peripheral edge of the semiconductor wafer.

【0004】[0004]

【課題を解決するための手段】本発明は、前述の課題に
鑑みて、鋭意研鑽の結果、研磨装置のスピンドル軸の先
端に固定されるチャックであって、下面に凹陥部を有し
たチャックベースと、チャックベースの凹陥部の底部に
配設したゲル状層と、ゲル状層に積層したチャックプレ
ートと、チャックプレートに積層したバックパットと、
バックパットに貼着する半導体ウエハと、半導体ウエハ
の外周に設けられたウエハホルダと、ウエハホルダとの
チャックベースの縁部との間に介装されたエアバッグ
と、エアバッグとエア供給源を接続させたチャックベー
スに配設されたエア供給系とを備えたものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and as a result of diligent study, a chuck fixed to the tip of a spindle shaft of a polishing apparatus, the chuck base having a concave portion on a lower surface. And, a gel layer disposed on the bottom of the recess of the chuck base, a chuck plate laminated on the gel layer, and a back pad laminated on the chuck plate,
A semiconductor wafer to be adhered to the back pad, a wafer holder provided on the outer periphery of the semiconductor wafer, an airbag interposed between an edge portion of the chuck base and the wafer holder, and an airbag and an air supply source are connected. And an air supply system provided on the chuck base.

【0005】従って、本発明の目的は、半導体ウエハを
研磨装置によって研磨加工する際に外周縁に現われる研
磨だれを発生させることを皆無とすると共に、半導体ウ
エハの全面を超高精度の均一性を有した研磨加工を施す
ための研磨装置のチャックを創案して提供するものであ
る。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to eliminate the occurrence of polishing droop that appears on the outer peripheral edge when a semiconductor wafer is polished by a polishing apparatus, and to achieve ultra-high precision uniformity over the entire surface of the semiconductor wafer. It is intended to provide and provide a chuck of a polishing apparatus for performing the polishing process.

【0006】[0006]

【発明の作用】本発明は、チャックベースの凹陥部の底
部にゲル状層を配設したことによって、ゲル状層に積層
したチャックプレート、及び、バックパットを介して半
導体ウエハを押圧する圧力を絶えず一定にすることを可
能とし、且つ、ウエハホルダの表面を裏面に設けたエア
バッグでコントロールすることにより研磨だれを防止し
て全面を超高精度の均一化された平坦制度の研磨加工を
施すものである。
According to the present invention, the pressure for pressing the semiconductor wafer through the chuck plate laminated on the gel layer and the back pad is provided by disposing the gel layer at the bottom of the concave portion of the chuck base. A method that enables the surface to be constantly constant, and controls the wafer holder surface with an airbag provided on the back surface to prevent drooling and apply ultra-high-precision uniform uniform polishing to the entire surface. It is.

【0007】[0007]

【実施の形態】以下、本発明の研磨装置用チャックの実
施の形態を図面によって、具体的に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings.

【0008】図1は本発明の研磨装置用チャックの実施
形態を説明するための断面とした説明図である。
FIG. 1 is an explanatory view showing a cross section for explaining an embodiment of a chuck for a polishing apparatus according to the present invention.

【0009】本発明は、ラッピングマシーン、ポリシン
グマシーン等の研磨装置のスピンドル軸の下端に半導体
ウエハWを貼着させるチャックに関するものであって、
更に詳細には、半導体ウエハWの研磨加工中の裏面から
の押圧圧力を一定圧にして、超高精度の均一性を有した
し研磨加工を施すと共に、研磨加工中に外周縁に現われ
る研磨だれを皆無とする研磨装置用チャックに関するも
のであり、下面に凹陥部1aを有した略カップ状のチャ
ックベース1と、該チャックベース1の凹陥部1aの底
部に配設したゲル状層2と、該ゲル状層2に積層したチ
ャックプレート3と、該チャックプレート3に積層した
バックパット4と、該バックパット4に着脱可能に貼着
する被研磨体である半導体ウエハWと、該半導体ウエハ
Wの外周に上下方向に出没可能で且つ研磨面より突出し
ないように設けられたウエハホルダ5と、該ウエハホル
ダ5とのチャックベース1の縁部1bとの間に介装され
たエアバッグ6と、該エアバッグ6とエア供給源(図示
しない)を接続させた前記チャックベース1に配設され
たエア供給系7とを備えたものである。
The present invention relates to a chuck for attaching a semiconductor wafer W to a lower end of a spindle shaft of a polishing device such as a lapping machine or a polishing machine,
More specifically, the pressing pressure from the back surface during the polishing process of the semiconductor wafer W is kept at a constant pressure, and the ultra-high-precision uniformity is applied to the polishing process. A chuck base 1 having a substantially cup-like shape having a concave portion 1a on the lower surface, a gel-like layer 2 disposed on the bottom of the concave portion 1a of the chuck base 1, A chuck plate 3 laminated on the gel-like layer 2, a back pad 4 laminated on the chuck plate 3, a semiconductor wafer W as an object to be polished to be detachably attached to the back pad 4, and a semiconductor wafer W A wafer holder 5 provided on the outer periphery of the chuck so as to be able to move up and down in the vertical direction and not protruding from the polishing surface, and an airbag 6 interposed between the wafer holder 5 and the edge 1b of the chuck base 1. Is obtained by a said airbag 6 and the air supply source air supply system 7 disposed in the chuck base 1 which has been connected to (not shown).

【0010】即ち、本発明の研磨装置用チャックは下面
に半導体ウエハWを水貼り等の手段によって貼着させて
研磨装置の上方から昇降自在に垂設されたスピンドル軸
の下端に固定されているものであり、下方に配設したラ
ッピングプレート又はポリシングプレートの研磨プレー
トPとの間に前記半導体ウエハWを挟圧させて研磨加工
するものである。
That is, in the polishing apparatus chuck of the present invention, a semiconductor wafer W is adhered to the lower surface by means of water bonding or the like, and is fixed to a lower end of a spindle shaft vertically suspended from above the polishing apparatus so as to be vertically movable. The semiconductor wafer W is pressed between a lapping plate or a polishing plate P, which is a polishing plate, disposed below and polished.

【0011】そして、図1に図示する如く、チャックベ
ース1は金属又はセラミック等で形成され、下面に凹陥
部1aを有した略カップ状のものであり、研磨装置の上
方から垂設されたスピンドル軸の下端に固定するもので
ある。
As shown in FIG. 1, the chuck base 1 is made of metal or ceramics and has a substantially cup shape having a concave portion 1a on its lower surface. It is fixed to the lower end of the shaft.

【0012】次に、ゲル状層2はゲル状物質を袋状物に
充填しているもので、前記チャックベース1の凹陥部1
aの底部に配設しているものである。
Next, the gel-like layer 2 is formed by filling a bag-like material with a gel-like substance.
It is arranged at the bottom of a.

【0013】次いで、チャックプレート3はセラミック
或いはポーラスセラミック等で形成されているもので、
前記ゲル状層2に積層されているものである。
Next, the chuck plate 3 is formed of ceramic, porous ceramic, or the like.
It is laminated on the gel layer 2.

【0014】更に、バックパット4はチャックプレート
3に積層されるものであり、図示する実施の形態の様
に、バックパット4に凹陥部を形成して嵌入させても構
わないものであり、下面に被研磨体である半導体ウエハ
Wを水貼り等の手段によって着脱可能に貼着させるか、
他の周知の実施の形態としてチャックプレート3及びバ
ックパット4を通気性の部材で形成すると共に、バキュ
ーム系をチャックベース1に配設してバキュームチャッ
クしても構わないものである。
Further, the back pad 4 is laminated on the chuck plate 3, and a recess may be formed in the back pad 4 so as to be fitted into the back pad 4, as in the illustrated embodiment. The semiconductor wafer W as the object to be polished is detachably adhered by means such as water adhesion,
As another known embodiment, the chuck plate 3 and the back pad 4 may be formed of a gas-permeable member, and a vacuum system may be provided on the chuck base 1 to perform vacuum chucking.

【0015】更には、ウエハホルダ5は研磨加工中に半
導体ウエハWの外周縁を保護するもので、表面に保護層
を貼着等の手段によって備えており、半導体ウエハWの
外周に上下方向に出没可能とすると共に、研磨面より突
出しないように設けられているもので、表面を研磨加工
中の半導体ウエハWの研磨面とを絶えず面一にして、半
導体ウエハWの外周縁に発生していた研磨だれを皆無と
するものである
Further, the wafer holder 5 protects the outer peripheral edge of the semiconductor wafer W during polishing, and is provided with a protective layer on its surface by means of, for example, bonding, so that the wafer holder 5 projects vertically on the outer periphery of the semiconductor wafer W. In addition, it is provided so as not to protrude from the polished surface, and the surface is constantly flush with the polished surface of the semiconductor wafer W being polished, and is generated on the outer peripheral edge of the semiconductor wafer W. No polishing

【0016】次に、エアバッグ6は前記ウエハホルダ5
と前記チャックベース1の縁部1bとの間に介装されて
いるもので、後述するエア供給系7によってエア供給源
よりエアが供給され、又は、吸引されて膨縮をしてウエ
ハホルダ5の表面の上下方向への出没可能を可能とする
ものである。
Next, the airbag 6 is connected to the wafer holder 5.
And an edge 1 b of the chuck base 1. Air is supplied from an air supply source by an air supply system 7 to be described later, or is sucked, expands and contracts, and the wafer holder 5 This makes it possible for the surface to move up and down.

【0017】そして、エア供給系7はチャックベース1
の縁部1bとベース部分と回転軸とに配設すると共に、
外部に設けたエア供給源(図示しない)連繋させている
ものである。
The air supply system 7 includes the chuck base 1
At the edge 1b, the base portion and the rotating shaft of
An air supply source (not shown) provided outside is connected.

【0018】この状態でラッピングプレート、ポリシン
グプレートの研磨プレートPとの間に半導体ウエハWを
挾圧させて研磨加工するものであるが、チャックベース
の凹陥部の底部にゲル状層を配設したことによって、ゲ
ル状層に積層したチャックプレート及びバックパットを
介して半導体ウエハを裏面側から押圧する圧力を絶えず
一定にすることを可能とし他物である。
In this state, the semiconductor wafer W is sandwiched between the lapping plate and the polishing plate P of the polishing plate for polishing, and a gel layer is provided at the bottom of the concave portion of the chuck base. This makes it possible to constantly maintain a constant pressure for pressing the semiconductor wafer from the back side through the chuck plate and the back pad laminated on the gel layer.

【0019】[0019]

【発明の効果】前述の如く構成した本発明の研磨装置用
チャックは、超高品質の研磨仕上加工を求められる昨今
の半導体ウエハに充分対応できるもので、特に、半導体
ウエハの平坦性と均一性の精度の向上が図れ、且つ、半
導体ウエハの外周縁に現われる研磨だれを皆無として生
産性及び歩留まりを向上させるものであり、画期的で有
効な発明である。
The chuck for a polishing apparatus of the present invention constructed as described above can sufficiently cope with recent semiconductor wafers requiring ultra-high-quality polishing and finishing, and in particular, the flatness and uniformity of the semiconductor wafer. This is an epoch-making and effective invention that improves the precision of the semiconductor wafer and eliminates any polishing dripping that appears on the outer peripheral edge of the semiconductor wafer, thereby improving productivity and yield.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明の研磨装置用チャックの実施形態
を説明するための断面とした説明図である。
FIG. 1 is an explanatory view showing a cross section for explaining an embodiment of a polishing apparatus chuck of the present invention.

【符号の説明】[Explanation of symbols]

W 半導体ウエハ 1 チャックベース 1a 凹陥部 1b 縁部 2 ゲル状層 3 チャックプレート 4 バックパット 5 ウエハホルダ 6 エアバッグ 7 エア供給系 P 研磨プレート W Semiconductor wafer 1 Chuck base 1a Depression 1b Edge 2 Gel layer 3 Chuck plate 4 Back pad 5 Wafer holder 6 Airbag 7 Air supply system P Polishing plate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】研磨装置のスピンドル軸の先端に固定され
るチャックであって、下面に凹陥部を有した略カップ状
のチャックベースと、該チャックベースの凹陥部の底部
に配設したゲル状層と、該ゲル状層に積層したチャック
プレートと、該チャックプレートに積層したバックパッ
トと、該バックパットに着脱可能に貼着する被研磨体で
ある半導体ウエハと、該半導体ウエハの外周に上下方向
に出没可能で且つ研磨面より突出しないように設けられ
たウエハホルダと、該ウエハホルダとのチャックベース
の縁部との間に介装されたエアバッグと、該エアバッグ
とエア供給源を接続させた前記チャックベースに配設さ
れたエア供給系とを備えたことを特徴とする研磨装置用
チャック。
1. A chuck fixed to a tip of a spindle shaft of a polishing apparatus, comprising a substantially cup-shaped chuck base having a concave portion on a lower surface, and a gel-shaped member provided at a bottom of the concave portion of the chuck base. Layers, a chuck plate laminated on the gel layer, a back pad laminated on the chuck plate, a semiconductor wafer which is an object to be polished to be detachably attached to the back pad, and A wafer holder provided so as to be able to protrude and retract in the direction and not protrude from the polishing surface, an airbag interposed between the wafer holder and an edge portion of the chuck base, and connecting the airbag to an air supply source. And an air supply system disposed on the chuck base.
JP2001007391A 2001-01-16 2001-01-16 Chuck for polishing apparatus Pending JP2002217145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001007391A JP2002217145A (en) 2001-01-16 2001-01-16 Chuck for polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007391A JP2002217145A (en) 2001-01-16 2001-01-16 Chuck for polishing apparatus

Publications (1)

Publication Number Publication Date
JP2002217145A true JP2002217145A (en) 2002-08-02

Family

ID=18875150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001007391A Pending JP2002217145A (en) 2001-01-16 2001-01-16 Chuck for polishing apparatus

Country Status (1)

Country Link
JP (1) JP2002217145A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010610A (en) * 2008-06-30 2010-01-14 Shin Etsu Handotai Co Ltd Method of polishing wafer, and method of manufacturing semiconductor device
CN102441841A (en) * 2011-08-29 2012-05-09 上海华力微电子有限公司 Method for improving grinding uniformity of chemical mechanical planarization (CMP)
CN103737479A (en) * 2013-11-29 2014-04-23 上海华力微电子有限公司 Polishing device and method for improving uniformity of chemical mechanical polishing by means of same
CN105904335A (en) * 2004-11-01 2016-08-31 株式会社荏原制作所 Polishing apparatus
CN113146465A (en) * 2021-04-06 2021-07-23 安徽禾臣新材料有限公司 Adsorption pad for double-sided grinding of thin wafer and production method
WO2024142725A1 (en) * 2022-12-27 2024-07-04 株式会社荏原製作所 Substrate suction member, top ring, and substrate processing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105904335A (en) * 2004-11-01 2016-08-31 株式会社荏原制作所 Polishing apparatus
JP2010010610A (en) * 2008-06-30 2010-01-14 Shin Etsu Handotai Co Ltd Method of polishing wafer, and method of manufacturing semiconductor device
CN102441841A (en) * 2011-08-29 2012-05-09 上海华力微电子有限公司 Method for improving grinding uniformity of chemical mechanical planarization (CMP)
CN103737479A (en) * 2013-11-29 2014-04-23 上海华力微电子有限公司 Polishing device and method for improving uniformity of chemical mechanical polishing by means of same
CN113146465A (en) * 2021-04-06 2021-07-23 安徽禾臣新材料有限公司 Adsorption pad for double-sided grinding of thin wafer and production method
WO2024142725A1 (en) * 2022-12-27 2024-07-04 株式会社荏原製作所 Substrate suction member, top ring, and substrate processing device

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