JPH03278402A - Voltage non-linear ceramic composite and manufacture thereof - Google Patents
Voltage non-linear ceramic composite and manufacture thereofInfo
- Publication number
- JPH03278402A JPH03278402A JP2076770A JP7677090A JPH03278402A JP H03278402 A JPH03278402 A JP H03278402A JP 2076770 A JP2076770 A JP 2076770A JP 7677090 A JP7677090 A JP 7677090A JP H03278402 A JPH03278402 A JP H03278402A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- heated
- nonlinear
- zinc oxide
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000002131 composite material Substances 0.000 title abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000011787 zinc oxide Substances 0.000 claims abstract description 20
- 230000001590 oxidative effect Effects 0.000 claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 238000010304 firing Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 34
- 229910052573 porcelain Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 101000939676 Androctonus crassicauda Toxin a Proteins 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 abstract description 3
- 229910052748 manganese Inorganic materials 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電圧非直線磁器組成物（非直線的な電圧−電流
特性を有し、電圧非直線抵抗体（バリスタ）の素体を形
成する磁器組成物）、特に酸化亜鉛を主成分とする電圧
非直線磁器組成物に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a voltage nonlinear ceramic composition (having nonlinear voltage-current characteristics and forming an element body of a voltage nonlinear resistor (varistor). porcelain compositions), particularly voltage nonlinear porcelain compositions containing zinc oxide as a main component.
［従来の技術］
酸化亜鉛を主成分とする電圧非直線磁器組成物としては
、ＺｎＯ粉末に、例えばＢｉ、Ｓｂ等の各種金属酸化物
粉末を添加して混合し、これらを例えばディスク形状に
成形した後、酸化性雰囲気中において１２００℃程度の
温度で焼結したものが知られている。[Prior Art] A voltage non-linear ceramic composition containing zinc oxide as a main component is prepared by adding and mixing various metal oxide powders such as Bi and Sb to ZnO powder, and forming the mixture into, for example, a disk shape. After that, it is known that the material is sintered at a temperature of about 1200° C. in an oxidizing atmosphere.
この例の電圧非直線磁器組成物では、焼結によって、電
圧非直線磁器組成物中にＺｎＯからなる半導体粒子と、
この半導体粒子の粒界に形成されたＢｉ２Ｏ３等の金属
酸化物の粒界相と、Ｚ、ｎｘ Ｓｂｚ ０４等からなる
スピネル相とが形成される。In the voltage nonlinear ceramic composition of this example, semiconductor particles made of ZnO are added to the voltage nonlinear ceramic composition by sintering.
A grain boundary phase of metal oxide such as Bi2O3 formed at the grain boundaries of the semiconductor particles and a spinel phase consisting of Z, nx Sbz 04, etc. are formed.
電圧非直線磁器組成物の非直線的な電圧−電流特性は、
このＺｎＯからなる半導体粒子と８１２０３等の金属酸
化物の粒界相との界面によって生ずるものである。The nonlinear voltage-current characteristics of the voltage nonlinear porcelain composition are
This is caused by the interface between the semiconductor particles made of ZnO and the grain boundary phase of metal oxide such as 81203.
ところで、電圧非直線磁器組成物の非直線的な電圧−電
流特性は、バリスタ電圧Ｖと非直線係数ａで評価される
。By the way, the nonlinear voltage-current characteristics of the voltage nonlinear ceramic composition are evaluated by the varistor voltage V and the nonlinear coefficient a.
ここで、バリスタ電圧■は、電気抵抗が急激に減少する
ようになる電圧であり、非直線係数αは電圧非直線磁器
組成物中を流れる電流Ｉの電圧Ｖに対する変化を次式で
近似したときに得られる数値である。Here, the varistor voltage ■ is the voltage at which the electrical resistance suddenly decreases, and the nonlinear coefficient α is when the change in the current I flowing through the voltage nonlinear ceramic composition with respect to the voltage V is approximated by the following equation. This is the numerical value obtained.
Ｉ＝ＫＶａ
（但し、■は電圧非直線磁器組成物中を流れる電流、■
は印加電圧、Ｋは定数）
そして、酸化亜鉛を主成分とする電圧非直線磁器組成物
は、非直線係数αが５０程度と大きいので、異常高電圧
（サージ）に対する応答性の点で特に優れている。I=KVa (where ■ is the current flowing through the voltage nonlinear ceramic composition, ■
(applied voltage, K is constant) Voltage nonlinear ceramic compositions containing zinc oxide as a main component have a large nonlinear coefficient α of about 50, so they are particularly excellent in response to abnormally high voltages (surges). ing.
また、この酸化亜鉛を主成分とする電圧非直線磁器組成
物は、原料のＺｎＯが安いので、安く製造することがで
きるものである。Moreover, this voltage nonlinear ceramic composition containing zinc oxide as a main component can be manufactured at low cost because the raw material ZnO is cheap.
［発明が解決しようとする課題］
しかし、この酸化亜鉛を主成分とする従来の電圧非直線
磁器組成物は、バリスタ電圧Ｖが２００Ｖ程度と高いの
で、各種小型モータのような低電圧を使用する電気機器
から発生するノイズ除去用としては使用できなかった。[Problem to be solved by the invention] However, since the conventional voltage non-linear porcelain composition containing zinc oxide as a main component has a high varistor voltage V of about 200 V, it is difficult to use a low voltage such as in various small motors. It could not be used to remove noise generated from electrical equipment.
本発明は、コストの安いＺｎＯ系の材料を使用して、バ
リスタ電圧の低い電圧非直線磁器組成物を得ることを目
的とするものである。The present invention aims to obtain a voltage nonlinear ceramic composition with a low varistor voltage by using an inexpensive ZnO-based material.
［課題を解決するための手段］
本発明に係る電圧非直線磁器組成物は、酸化亜鉛を主成
分とし、副成分として少なくとも１種以上の金属酸化物
を含有する組成物を焼成してなる焼結体であって、この
焼結体は、還元されて半導体の状態にある半導体部と、
この半導体部の上に所定の厚さで層状に被覆形成された
酸化層とからなる。[Means for Solving the Problems] The voltage nonlinear porcelain composition according to the present invention is produced by firing a composition containing zinc oxide as a main component and at least one metal oxide as a subcomponent. A solid body, the sintered body includes a semiconductor part that has been reduced and is in a semiconductor state,
An oxide layer is formed to cover the semiconductor portion in a layered manner with a predetermined thickness.
ここで、副成分としては、Ｂｉ、Ｓｂ、Ｍｎ。Here, the subcomponents include Bi, Sb, and Mn.
Ｃｏ、Ｎｉ、Ｃｒ、Ｍｇ、ＡｌおよびＳｉから選択され
た１種または２種以上の金属の酸化物を挙げることがで
きる。Examples include oxides of one or more metals selected from Co, Ni, Cr, Mg, Al, and Si.
この電圧非直線磁器組成物は、酸化亜鉛を主成分とし、
副成分として少なくとも１種以上の金属酸化物を含有す
る上記組成物を所定形状に成型した後、還元性雰囲気中
において加熱して半導体化させ、次に酸化性雰囲気中に
おいて加熱して表面を酸化させることにより製造するこ
とができる。This voltage nonlinear porcelain composition has zinc oxide as a main component,
After the composition containing at least one metal oxide as a subcomponent is molded into a predetermined shape, it is heated in a reducing atmosphere to convert it into a semiconductor, and then heated in an oxidizing atmosphere to oxidize the surface. It can be manufactured by
ここで、還元性雰囲気中における加熱温度としては、１
１００〜１３００℃の範囲が好ましい。Here, the heating temperature in the reducing atmosphere is 1
The temperature range is preferably from 100 to 1300°C.
加熱温度が１１００℃未満では焼結が不充分になり、１
３００℃を越えるとＢｉｇｏｔのような低融点の副成分
が抜け、特性に悪影響を及ぼすが、１１００〜１３００
℃の範囲ではこのようなことがないからである。If the heating temperature is less than 1100°C, sintering will be insufficient, and 1
If the temperature exceeds 300℃, low melting point subcomponents such as Bigot will come out, which will have a negative effect on the properties, but
This is because this does not occur in the temperature range of ℃.
また、酸化性雰囲気中における加熱温度としては６００
〜７５０℃の範囲が好ましい。加熱温度が６００℃未満
ではバリスタ電圧■が低くなり過ぎたり、非直線係数α
が小さくなり過ぎ、また７５０℃を越えるとバリスタ電
圧■が高くなり過ぎるが、６００〜７５０℃の範囲では
バリスタ電圧Ｖや非直線係数αが適当な値になるからで
ある。In addition, the heating temperature in an oxidizing atmosphere is 600°C.
A range of 750°C is preferred. If the heating temperature is less than 600℃, the varistor voltage ■ may become too low or the nonlinear coefficient α
This is because if the temperature becomes too small and the temperature exceeds 750°C, the varistor voltage (2) becomes too high, but in the range of 600 to 750°C, the varistor voltage V and the nonlinear coefficient α become appropriate values.
また、この電圧非直線磁器組成物は、酸化亜鉛を主成分
とし、副成分として少なくとも１種以上の金属酸化物を
含有する上記組成物を所定形状に成型した後、酸化性雰
囲気中において加熱して酸化させ、次に還元性雰囲気中
において加熱して還元させ、次に酸化性雰囲気中におい
て加熱して表面を再酸化させることによっても製造する
ことができる。In addition, this voltage nonlinear porcelain composition is produced by molding the composition containing zinc oxide as a main component and at least one metal oxide as a subcomponent into a predetermined shape, and then heating it in an oxidizing atmosphere. It can also be produced by heating in a reducing atmosphere to reduce the surface, and then heating in an oxidizing atmosphere to reoxidize the surface.
ここで、先の酸化性雰囲気中における加熱温度としては
、１１００〜１３００℃の範囲が好ましい。加熱温度が
１１００℃未満では焼結が不充分になり、１３００℃を
越えるとＢ ｉ ｚ Ｏ３のような低融点の副成分が抜
け、特性に悪影響を及ぼすが、１．１００〜１３００℃
の範囲ではこのようなことがないからである。Here, the heating temperature in the oxidizing atmosphere is preferably in the range of 1100 to 1300°C. If the heating temperature is less than 1,100°C, sintering will be insufficient, and if it exceeds 1,300°C, low melting point subcomponents such as B iz O3 will come out, which will have a negative effect on the properties.
This is because this does not occur within the range of .
また、還元性雰囲気中における加熱温度としては７００
〜１１００℃の範囲が好ましい。加熱温度が７００℃未
満では還元が不充分で、完全にバリスタ特性を除くこと
ができず、１１００℃を越えると粒子成長が進み初期の
特性が悪くなるが、７００〜１１００℃の範囲ではこの
ようなことがないからである。In addition, the heating temperature in a reducing atmosphere is 700°C.
A range of 1100°C to 1100°C is preferred. If the heating temperature is less than 700℃, the reduction will be insufficient and the varistor characteristics cannot be completely removed, and if the heating temperature exceeds 1100℃, particle growth will progress and the initial characteristics will deteriorate, but in the range of 700 to 1100℃ This is because there is no such thing.
更に、後の酸化性雰囲気中における加熱温度としては６
００〜７５０℃の範囲が好ましい。加熱温度が６００℃
未満ではバリスタ電圧■が低くなり過ぎたり、非直線係
数αが小さくなり過ぎ、また７５０℃を越えるとバリス
タ電圧■が高くなり過ぎるが、６００〜７５０℃の範囲
ではバリスタ電圧■や非直線係数αが適当な値になるか
らである。Furthermore, the heating temperature in the oxidizing atmosphere was 6.
The temperature range is preferably from 00 to 750°C. Heating temperature is 600℃
Below 750°C, the varistor voltage ■ becomes too low and the nonlinear coefficient α becomes too small, and when it exceeds 750°C, the varistor voltage ■ becomes too high, but in the range of 600 to 750°C, the varistor voltage This is because it becomes an appropriate value.
［実施例］ 実験１ ＺｎＯ粉末にＢｉ、Ｓｂ、Ｍｎ、Ｃｏ、Ｎｉ。[Example] Experiment 1 Bi, Sb, Mn, Co, and Ni in ZnO powder.
Ｃｒ、Ｍｇ、ＡｌまたはＳｉから選択された元素の酸化
物を、第１表の試料Ｎｏ３，１５．２７に示す割合で添
加し、これらを充分に混合した後、７２０℃で２時間仮
焼した。An oxide of an element selected from Cr, Mg, Al, or Si was added in the proportion shown in Sample No. 3, 15.27 in Table 1, and after thoroughly mixing these, the mixture was calcined at 720°C for 2 hours. .
次に、この仮焼して得られたものを充分に粉砕し、この
粉砕したものを金型で成型して、外径１２．２５ｍｍ、
内径７．７５ｍｍのリング状の成形体を複数個製造した
。Next, the calcined material was thoroughly ground, and the ground material was molded into a mold with an outer diameter of 12.25 mm.
A plurality of ring-shaped molded bodies having an inner diameter of 7.75 mm were manufactured.
次に、このリング状の成形体をＨ，２，０％十Ｎ２９８
％の還元性雰囲気中において、１１５０℃で２時間焼成
し、その後、空気中において６５０℃で酸化焼成した。Next, this ring-shaped molded body was made of H, 2.0% and N298.
% reducing atmosphere at 1150°C for 2 hours, and then oxidation firing at 650°C in air.
次に、この酸化焼成したものに銀電極を各々焼き付けて
バリスタを形成し、２５℃におけるバリスタ電圧Ｖ、。Next, silver electrodes are baked on each of the oxidized and fired products to form a varistor, and the varistor voltage is V at 25°C.
、と、非直線係数ａを求めた。, and the nonlinear coefficient a was calculated.
結果は第１表に示す通りとなった。The results were as shown in Table 1.
実験２
次に、添加成分を第１表の試料Ｎｏ３７，３８゜３９に
示すようにしたこと、および成形体を酸化性雰囲気中に
おいて加熱温度１１５０℃で１回だけ加熱して酸化焼成
したこと以外は実！１ｉ１と同様にして従来例としての
バリスタを形成し、２５℃におけるバリスタ電圧Ｖ ｌ
ｏ＋ａＡと、非直線係数ａを求めた。Experiment 2 Next, except that the additive components were as shown in Sample Nos. 37 and 38°39 in Table 1, and the molded body was heated only once at a heating temperature of 1150°C in an oxidizing atmosphere and oxidized and fired. Fruit! A varistor as a conventional example was formed in the same manner as 1i1, and the varistor voltage V l at 25°C was
o+aA and the nonlinear coefficient a were determined.
結果は第１表に示す通りとなった。The results were as shown in Table 1.
※
×
※
実験１によれば、バリスタ電圧■１゜、Ａは５〜３５Ｖ
となった。これは実験２の結果、すなわち従来例と比較
して大巾に低下していることがわかる。* × * According to experiment 1, varistor voltage ■1°, A is 5 to 35V
It became. It can be seen that this is a large decrease compared to the results of Experiment 2, that is, the conventional example.
実験１のバリスタ電圧■１゜□が、実験２のバリスタ電
圧Ｖ ｔｏ□よりも大幅に低くなったのは、実験２で得
られた電圧非直線磁器組成物がＢＬ槽構造なっているの
に対して、実験１で得られた電圧非直線磁器組成物が表
面再酸化型の構造になっているためと考えられる。The reason why the varistor voltage ■1゜□ in Experiment 1 was significantly lower than the varistor voltage V to □ in Experiment 2 is because the voltage nonlinear porcelain composition obtained in Experiment 2 had a BL tank structure. On the other hand, this is considered to be because the voltage nonlinear ceramic composition obtained in Experiment 1 has a surface reoxidation type structure.
実験３
次に、第２表の試料Ｎｏ１〜６．１３〜１８゜２５〜３
０に示す組成の成形体を空気中において５５０〜８００
℃の範囲で酸化焼成した以外は実験１と同様にして、２
５℃におけるバリスタ電圧■１゜、Ａと、非直線係数α
を求めた。Experiment 3 Next, sample No. 1-6.13-18°25-3 in Table 2
550 to 800 in air.
Experiment 2 was carried out in the same manner as in Experiment 1 except that the oxidation firing was carried out in the range of °C.
Varistor voltage at 5°C■1°, A, and nonlinear coefficient α
I asked for
結果は第２表に示す通りとなった。The results were as shown in Table 2.
※
※ Ｘ
※ ※
※
実験３の結果から、空気中における酸化焼成において、
加熱温度が５５０℃では、バリスタ電圧Ｖ １ｏｓＡが
０．１〜０．５Ｖ程度、非直線係数αも１程度となって
、満足できる電気的特性のものは得られなかった。※ ※ X ※ ※ ※ From the results of Experiment 3, in oxidation firing in air,
When the heating temperature was 550° C., the varistor voltage V 1osA was about 0.1 to 0.5 V and the nonlinear coefficient α was about 1, so that satisfactory electrical characteristics could not be obtained.
また、空気中における酸化焼成において、加熱温度が８
００℃では、バリスタ電圧Ｖ ＩＯｍＡが３００Ｖ付近
と高くなり過ぎ、満足できる電気的特性のものは得られ
なかった。In addition, in oxidation firing in air, the heating temperature is 8.
At 00° C., the varistor voltage V IOmA was too high, around 300 V, and satisfactory electrical characteristics could not be obtained.
従って、空気中における酸化焼成において、加熱温度は
６００〜７５０℃の範囲が好ましい。Therefore, in the oxidation firing in air, the heating temperature is preferably in the range of 600 to 750°C.
実験４
第３表の試料Ｎｏ７〜１２．１９〜２４．３１〜３６に
示す組成の成形体を先に酸化性雰囲気中において１１５
０℃で加熱して酸化焼成した以外は実験ｌと同様にして
電圧非直線磁器組成物を形成し、この電圧非直線磁器組
成物の２５℃におけるバリスタ電圧と非直線係数ａを求
めた。Experiment 4 Sample Nos. 7 to 12.19 to 24.31 to 36 in Table 3 were first placed in an oxidizing atmosphere at 115%
A voltage nonlinear porcelain composition was formed in the same manner as in Experiment 1 except that it was heated at 0°C and oxidized and fired, and the varistor voltage and nonlinearity coefficient a at 25°C of this voltage nonlinear porcelain composition were determined.
結果は第３表に示す通りとなった。The results were as shown in Table 3.
※
※ ※
× ×
※
上記の結果は、実験１および実験３とほぼ同等になって
おり、成形体を還元焼成させる前にあらかじめ酸化させ
ておいても同様の結果が得られることがわかる。* * * × × * The above results are almost the same as Experiments 1 and 3, and it can be seen that similar results can be obtained even if the compact is oxidized in advance before reduction firing.
［発明の効果］
本発明によれば、コストの安い酸化亜鉛系の材料を使用
して、バリスタ電圧の低い電圧非直線磁器組成物を得る
ことができるという効果がある。[Effects of the Invention] According to the present invention, there is an effect that a voltage nonlinear ceramic composition with a low varistor voltage can be obtained using an inexpensive zinc oxide-based material.
Claims (3)
種以上の金属酸化物を含有する組成物を焼成してなる焼
結体であって、この焼結体は、還元されて半導体の状態
にある半導体部と、この半導体部の上に所定の厚さで被
覆形成された酸化層とからなる電圧非直線磁器組成物。1. Contains zinc oxide as a main component and at least 1 as a subcomponent
This sintered body is formed by firing a composition containing at least one metal oxide, and this sintered body includes a semiconductor portion that has been reduced to a semiconductor state, and a predetermined thickness formed on the semiconductor portion. A voltage non-linear porcelain composition comprising an oxide layer coated with an oxidized layer.
種以上の金属酸化物を含有する組成物を、還元性雰囲気
中において加熱して半導体化させ、次に酸化性雰囲気中
において加熱して表面を酸化させることを特徴とする電
圧非直線磁器組成物の製造方法。2. Contains zinc oxide as a main component and at least 1 as a subcomponent
A voltage nonlinear ceramic composition characterized in that a composition containing one or more metal oxides is heated in a reducing atmosphere to convert it into a semiconductor, and then heated in an oxidizing atmosphere to oxidize the surface. manufacturing method.
種以上の金属酸化物を含有する組成物を、酸化性雰囲気
中において加熱して酸化させ、次に、還元性雰囲気中に
おいて加熱して半導体化させ、次に酸化性雰囲気中にお
いて加熱して表面を再酸化させることを特徴とする電圧
非直線磁器組成物の製造方法。3. Contains zinc oxide as a main component and at least 1 as a subcomponent
A composition containing one or more metal oxides is heated in an oxidizing atmosphere to oxidize it, then heated in a reducing atmosphere to convert it into a semiconductor, and then heated in an oxidizing atmosphere to form a surface. A method for producing a voltage nonlinear porcelain composition, characterized by reoxidizing the composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2076770A JPH0648642B2 (en) | 1990-03-28 | 1990-03-28 | Voltage nonlinear porcelain composition and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2076770A JPH0648642B2 (en) | 1990-03-28 | 1990-03-28 | Voltage nonlinear porcelain composition and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03278402A true JPH03278402A (en) | 1991-12-10 |
| JPH0648642B2 JPH0648642B2 (en) | 1994-06-22 |
Family
ID=13614827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2076770A Expired - Fee Related JPH0648642B2 (en) | 1990-03-28 | 1990-03-28 | Voltage nonlinear porcelain composition and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0648642B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011216877A (en) * | 2010-03-17 | 2011-10-27 | Panasonic Corp | Laminated varistor and manufacturing method of the same |
-
1990
- 1990-03-28 JP JP2076770A patent/JPH0648642B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011216877A (en) * | 2010-03-17 | 2011-10-27 | Panasonic Corp | Laminated varistor and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0648642B2 (en) | 1994-06-22 |
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