JPH03275724A - Flexible printed circuit substrate having low thermal expansion - Google Patents
Flexible printed circuit substrate having low thermal expansionInfo
- Publication number
- JPH03275724A JPH03275724A JP7344790A JP7344790A JPH03275724A JP H03275724 A JPH03275724 A JP H03275724A JP 7344790 A JP7344790 A JP 7344790A JP 7344790 A JP7344790 A JP 7344790A JP H03275724 A JPH03275724 A JP H03275724A
- Authority
- JP
- Japan
- Prior art keywords
- diaminobenzanilide
- thermal expansion
- polyimide film
- low thermal
- aromatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 229920001721 polyimide Polymers 0.000 claims abstract description 25
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 239000011888 foil Substances 0.000 claims abstract description 13
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000004985 diamines Chemical class 0.000 claims abstract description 5
- UDKYPBUWOIPGDY-UHFFFAOYSA-N 3-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=CC(N)=C1 UDKYPBUWOIPGDY-UHFFFAOYSA-N 0.000 claims abstract description 4
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000006068 polycondensation reaction Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 150000004982 aromatic amines Chemical class 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011889 copper foil Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 239000002798 polar solvent Substances 0.000 abstract description 5
- 239000009719 polyimide resin Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000379 polymerizing effect Effects 0.000 abstract 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 abstract 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000002253 acid Substances 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 7
- 229920005575 poly(amic acid) Polymers 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 4
- YDYSEBSNAKCEQU-UHFFFAOYSA-N 2,3-diamino-n-phenylbenzamide Chemical compound NC1=CC=CC(C(=O)NC=2C=CC=CC=2)=C1N YDYSEBSNAKCEQU-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229920003192 poly(bis maleimide) Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012454 non-polar solvent Substances 0.000 description 3
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012661 block copolymerization Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 etc. Polymers 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、低熱膨張で耐熱性が優れたポリイミドフィル
ム及びこのフィルムと金属箔とを接着剤で貼合わせた線
膨弓艮係数の低いフレキシブルプリント回路用基板に関
するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a polyimide film with low thermal expansion and excellent heat resistance, and a flexible film with a low coefficient of linear expansion, which is made by laminating this film and metal foil with an adhesive. This invention relates to a printed circuit board.
(従来技術)
近年、電子電気工業の発展に伴い、通信用、民生用機器
の実装方式の簡略化、小型化、高信頼性が要求され、プ
リント回路板の使用が望まれている。特に軽量で立体的
に実装できるフレキシブルプリント回路板の使用が有利
であり、注目されている。(Prior Art) In recent years, with the development of the electronic and electrical industry, there has been a demand for simpler, smaller, and more reliable packaging methods for communication and consumer equipment, and the use of printed circuit boards has become desirable. In particular, the use of flexible printed circuit boards that are lightweight and can be mounted three-dimensionally is advantageous and is attracting attention.
従来のフレキシブルプリント回路用基板は、銅箔と線膨
張係数20x 1O−6(1/K)以上のポリイミドフ
ィルムとを接着剤で貼合わせたもので、高い線膨張係数
をもったフレキシブルプリント回路用基板であった。そ
のため、パターンの微細加工では寸法変化により不良と
なることが多かった。Conventional flexible printed circuit boards are made by bonding copper foil and polyimide film with a linear expansion coefficient of 20x 1O-6 (1/K) or more with adhesive, and are used for flexible printed circuits with a high linear expansion coefficient. It was the board. For this reason, microfabrication of patterns often results in defects due to dimensional changes.
また金属箔上に直接ポリアミック酸溶液を流延塗布し、
加熱硬化させて接着剤層のないフレキシブル回路用基板
を製造する方法があるが、耐熱性は確保できるものの、
格別の工夫がない限り充分小さな線膨張係数のフレキシ
ブルプリント回路用基板を得ることが困難であった。In addition, by casting a polyamic acid solution directly onto the metal foil,
There is a method of manufacturing a flexible circuit board without an adhesive layer by heating and curing it, but although heat resistance can be ensured,
Unless special measures are taken, it has been difficult to obtain a flexible printed circuit board with a sufficiently small coefficient of linear expansion.
(発明が解決しようとする課題)
本発明は、これまでにかかる欠点を克服すべくlIt意
検討した結果、接着剤を使用して、芳香族ジアミン1こ
ジアミノベンズアニリドを用いた線膨弓長係数の低いポ
リイミドフィルムと金属箔とを貼合わせることで、優れ
た低熱膨張のフレキシブル回路用基板が得られることを
見出し、本発明を完成するに至ったものである。(Problems to be Solved by the Invention) As a result of careful consideration in order to overcome the above-mentioned drawbacks, the present invention provides a linear expansion bow length coefficient using an aromatic diamine diaminobenzanilide using an adhesive. The inventors have discovered that a flexible circuit board with excellent low thermal expansion can be obtained by laminating a polyimide film with a low thermal expansion coefficient and a metal foil, leading to the completion of the present invention.
(課題を解決するための手段)
本発明は、芳香族テトラカルボン酸二無水物と芳香族ジ
アミンとの重縮合反応によって得られるポリイミドフィ
ルムにおいて、酸無水物として芳香族テトラカルボン酸
二無水物(A)の中から選ばれた1種または2種以上の
芳香族テトラカルボン酸二無水物と芳香族ジアミン(B
)として4,4′−ジアミノベンズアニリドおよび/ま
たは3,4′−ジアミノベンズアニリドと4,4′−ジ
アミノジフェニルエーテルの混合物からなり、かつ4,
4′−ジアミノベンズアニリドおよび/または3.4′
−ジアミノベンズアニリドが、芳香族アミン成分の30
〜100モル%からなる芳香族ジアミンからなる線膨張
係数が15X 1O−6(1,/K)以下である低熱膨
弓艮ポリイミドフィルム及びこの低熱膨張ポリイミドフ
ィルムを金属箔と接着剤で貼合わせることにより、金属
箔エツチング後の線膨張係数が15x jO−6(1/
K)以rである低熱膨弓長フレキシブルプリント回路板
である。(Means for Solving the Problems) The present invention provides a polyimide film obtained by a polycondensation reaction of aromatic tetracarboxylic dianhydride and aromatic diamine, in which aromatic tetracarboxylic dianhydride ( One or more aromatic tetracarboxylic dianhydrides selected from A) and aromatic diamine (B
) consists of 4,4'-diaminobenzanilide and/or a mixture of 3,4'-diaminobenzanilide and 4,4'-diaminodiphenyl ether, and 4,
4'-diaminobenzanilide and/or 3.4'
- diaminobenzanilide is the aromatic amine component
A low thermal expansion polyimide film made of aromatic diamine consisting of ~100 mol% and having a linear expansion coefficient of 15X 1O-6 (1,/K) or less, and bonding this low thermal expansion polyimide film with metal foil and an adhesive. Therefore, the coefficient of linear expansion after etching the metal foil is 15x jO-6 (1/
K) It is a low thermal expansion bow length flexible printed circuit board with r.
(作用)
本発明で使用するポリイミドフィルムの芳香族テトラカ
ルボン酸二無水物は、1,2,4.5−ベンゼンテトラ
カルボン酸二無水物、3.3’、4.4’−ビフェニル
テトラカルボン酸二無水物、3.3’、4.4’−ベン
ゾフェノンテトラカルボン酸二無水物、ジフェニルスル
ホン−3,3’、4.4’−テトラカルボン酸二無水物
及び3.3’、4.4”−ジフェニルエーテルテトラカ
ルボン酸二無水物などであり、これらの1神または2種
類以上の混合物を用いることができる。中でも1,2,
4.5−ベンゼンテトラカルボン酸二無水物は剛直な成
分として作用し、3.3’、4.4’−ビフェニルテト
ラカルボン酸二無水物と3.3’ 、4.4’−ジフェ
ニルエーテルテトラカルボン酸二無水物は屈曲性に富む
成分として作用する。本発明で芳香族ジアミン成分とし
て使用するジアミンは、分子内に屈曲性に富むエーテル
結合を持つ4,4′−ジアミノジフェニルエーテルと剛
直な結合を有するジアミノベンズアニリドの2または3
種類のジアミンの混合物である。(Function) The aromatic tetracarboxylic dianhydride of the polyimide film used in the present invention is 1,2,4.5-benzenetetracarboxylic dianhydride, 3.3', 4.4'-biphenyltetracarboxylic dianhydride, Acid dianhydride, 3.3',4.4'-benzophenonetetracarboxylic dianhydride, diphenylsulfone-3,3',4.4'-tetracarboxylic dianhydride and 3.3',4. 4"-diphenyl ether tetracarboxylic dianhydride, etc., and one or a mixture of two or more of these can be used. Among them, 1, 2,
4.5-benzenetetracarboxylic dianhydride acts as a rigid component, and 3.3', 4.4'-biphenyltetracarboxylic dianhydride and 3.3', 4.4'-diphenyl ether tetracarboxylic dianhydride Acid dianhydride acts as a component with high flexibility. The diamine used as the aromatic diamine component in the present invention is 4,4'-diaminodiphenyl ether, which has a highly flexible ether bond in the molecule, and diaminobenzanilide, which has a rigid bond.
It is a mixture of different diamines.
ジアミン成分の構成比は、ジアミノベンズアニリドが芳
香族ジアミンの30〜100モル%の範囲が好ましい。The composition ratio of the diamine component is preferably in the range of 30 to 100 mol % of diaminobenzanilide based on the aromatic diamine.
ジアミノベンズアニリドが30モル%以下では、剛直な
分子+M造を導入する効果が発現しないため、線膨張係
数が大きくなる。If the diaminobenzanilide content is 30 mol % or less, the effect of introducing the rigid molecule + M structure is not exhibited, so the coefficient of linear expansion becomes large.
芳香族テトラカルボン酸二無水物(A)と芳香族ジアミ
ン(B)との反応は、非プロトン性極性溶媒中で行われ
る。非プロトン性極性溶媒は、N、N−ジメチルホルム
アミド(DMF)、N、N−ジメチルアセトアミド(D
MAc)、N−メチル−2−ピロリドン(NMP)、テ
トラヒドロフラン(T HF ) 、ジグライムなどで
ある。非プロトン性極性溶媒は、一種類のみ用いてもよ
いし、二種類以上を混合して用いてもよい。この時、L
記非プロトン性極性溶媒と相溶性がある非極性溶媒を混
合して使用しても良い。特にトルエン、キシレン、ソル
ベントナフサなどの芳香族炭化水素は、塗膜表面を平消
に仕上げる目的で良く使用される。混合溶媒における非
極性溶媒の割合は、30重量%以下であることが好まし
い。これは非極性溶媒が30重量%以上では溶媒の溶解
力が低下しポリアミック酸が析出するためである。本発
明においてもつとも好ましい溶媒は、DMFと比較的沸
点の高い芳香族炭化水素との組合わせである。The reaction between the aromatic tetracarboxylic dianhydride (A) and the aromatic diamine (B) is carried out in an aprotic polar solvent. Aprotic polar solvents include N,N-dimethylformamide (DMF), N,N-dimethylacetamide (D
MAc), N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), diglyme, and the like. Only one type of aprotic polar solvent may be used, or two or more types may be used in combination. At this time, L
A mixture of non-polar solvents that are compatible with the above aprotic polar solvent may be used. In particular, aromatic hydrocarbons such as toluene, xylene, and solvent naphtha are often used for the purpose of flattening the surface of the coating film. The proportion of the nonpolar solvent in the mixed solvent is preferably 30% by weight or less. This is because if the nonpolar solvent exceeds 30% by weight, the solvent's dissolving power decreases and polyamic acid precipitates. The most preferred solvent in the present invention is a combination of DMF and an aromatic hydrocarbon having a relatively high boiling point.
ポリイミドの重縮合反応は、
(イ)全アミン成分を先に溶媒に溶解し、その後酸成分
を添加し反応させるランダム共重合的な方法と、
(ロ)特定の一種類のアミンと酸をまず反応させてアミ
ン末端または酸末端のポリマとし、しかる後にこの末端
を成長させ、残りのアミン成分と酸成分を添加して重合
を完結させるブロック共重合的な方法と、
(ハ)2種類以上の酸、アミンをそれぞれ別に反応させ
て得られたポリアミック酸を化学反応を伴わずに混合す
るブレンド的な方法がある。The polycondensation reaction of polyimide consists of two methods: (a) a random copolymerization method in which all amine components are first dissolved in a solvent, and then an acid component is added and reacted; and (b) a method in which one specific type of amine and an acid are first dissolved. A block copolymerization method in which the polymer is reacted to form an amine-terminated or acid-terminated polymer, which is then grown, and the remaining amine component and acid component are added to complete the polymerization; There is a blending method in which polyamic acids obtained by reacting acids and amines separately are mixed without chemical reaction.
本発明においては、ランダム共重合的な方法、あるいは
ブロック共重合的な方法、ブレンド的な方法とれでも充
分目的に叶う特性の優れたフレキシブル回路用組成物を
得ることができる。したがって本発明では、(イ)(ロ
)(ハ)のどの重合方法も採用することがで゛きる。こ
のようにして得たポリアミック酸溶液をガラス板、ステ
ンレス板等に流延、60°C”−150°Cの温度範囲
で1〜2時間乾燥する。In the present invention, a composition for flexible circuits having excellent properties that satisfies the purpose can be obtained by a random copolymerization method, a block copolymerization method, or a blending method. Therefore, in the present invention, any of the polymerization methods (a), (b), and (c) can be employed. The polyamic acid solution thus obtained is cast onto a glass plate, stainless steel plate, etc., and dried at a temperature ranging from 60°C'' to 150°C for 1 to 2 hours.
その後剥離し、鉄枠で固定した後150°C〜350°
Cの温度範囲で加熱することでポリイミドフィルムが得
られる。After that, peel it off and fix it with an iron frame at 150°C to 350°.
A polyimide film can be obtained by heating in a temperature range of C.
本発明で使用される金属箔は、一般に銅箔が用いられる
が、アルミ箔、ニッケル箔、ステンレス箔、タングステ
ン箔なども用いることができる。The metal foil used in the present invention is generally copper foil, but aluminum foil, nickel foil, stainless steel foil, tungsten foil, etc. can also be used.
金属箔に直接ポリアミック酸溶液を流延塗布した後、加
熱効果させて接着剤層のないフレキシブル回路用基板を
製造する方法があるが、耐熱性は確保できるものの格別
の工夫がない限り充分小さな線膨張係数のフレキシブル
ブ1ノント回路用基板を得ることが困難であった。そこ
で銅箔と低熱膨張のポリイミドフィルムの片面あるいは
両面に接着剤を塗布し、これらを貼合わせることにより
低熱膨張のプリント回路基板ができる。また、ガラスク
ロス等の基材に含浸してプリプレグとすることもできる
。There is a method of casting a polyamic acid solution directly on metal foil and applying a heating effect to produce a flexible circuit board without an adhesive layer, but although heat resistance can be ensured, the wires are sufficiently small unless special measures are taken. It has been difficult to obtain a flexible circuit board with a non-expansion coefficient. Therefore, by applying an adhesive to one or both sides of a copper foil and a low thermal expansion polyimide film and bonding them together, a low thermal expansion printed circuit board can be produced. Moreover, it can also be made into a prepreg by impregnating a base material such as glass cloth.
本発明で使用する接着剤は、NBR/フェノール樹脂、
フェノール樹脂/ブチラール樹脂、NBR/エポキシ樹
脂、ビスマレイミド/アクリル招脂、ポリイミド樹脂等
を挙げることができ、特に耐熱性が要求される用途に対
してはビスマレイミド/アクリル樹脂、ポリイミド樹脂
が望ましい。The adhesive used in the present invention is NBR/phenol resin,
Examples include phenol resin/butyral resin, NBR/epoxy resin, bismaleimide/acrylic resin, polyimide resin, etc., and bismaleimide/acrylic resin and polyimide resin are particularly desirable for applications requiring heat resistance.
以上の接着剤はそのまま使用してもかまわないが、三酸
化アンチモン、水酸化アルミニウム、ホウ酸バリウム、
臭素化エポキシ等の難燃剤あるいはシリカアルミナ、マ
イカ、酸化チタン、ジルコニア、酸化マグネシウム等の
無機フィラーを適当i添加してもかまわない。但し多量
に添加すると接着強度が低下する。The above adhesives can be used as is, but antimony trioxide, aluminum hydroxide, barium borate,
Flame retardants such as brominated epoxy or inorganic fillers such as silica alumina, mica, titanium oxide, zirconia, and magnesium oxide may be added as appropriate. However, if a large amount is added, the adhesive strength will decrease.
以下本発明を合成例及び比較例によりさらに詳細に説明
する。The present invention will be explained in more detail below using synthesis examples and comparative examples.
(合成例)
温度計、撹拌装置、環流コンデンサー及び乾燥窒素ガス
吹き込み口を備えた4つロセパラブルフラスコに精製し
た無水の4.4′−ジアミノベンズアニリド1..70
.4g (アミン成分の75モル%)をとり、これに無
水のN、N−ジメチルホルムアミド80重量%とキシレ
ン2 [1jfi i%の混合溶剤を、全仕込み原料中
の固形分割合が15重量%になるだけの量を加え、窒素
ガスを流しながら溶解した。(Synthesis Example) Purified anhydrous 4,4'-diaminobenzanilide 1. .. 70
.. Take 4 g (75 mol% of the amine component) and add a mixed solvent of 80% by weight of anhydrous N,N-dimethylformamide and 2[1jfii%] of xylene to it until the solid content in the total raw materials is 15% by weight. Add as much as possible and dissolve while flowing nitrogen gas.
次いで精製した 1,2,4.5−ベンゼンテトラカル
ボン酸二無水物152.]、g (酸成分の75モル%
)を攪(↑しながら少量ずつ添加するが発熱反応である
ため、外部水槽に約15°Cの冷水を循環させてこれを
冷却した。添加後、内部温度を20°Cに設定し、5時
間反応した。Then purified 1,2,4,5-benzenetetracarboxylic dianhydride 152. ], g (75 mol% of acid component
) was added little by little while stirring (↑, but since it was an exothermic reaction, it was cooled by circulating cold water at about 15°C in an external water tank. After the addition, the internal temperature was set at 20°C, and Time reacted.
次に精製した無水の4,4”−ジアミノジフェニルエー
テル50.1g (アミン成分の25モル%)を撹拌し
ながら少量ずつ添加し、更に続いて、精製した1、2,
4.5−ベンゼンテトラカルボン酸二無水物50.7g
(酸成分の25モル%)を撹拌しながら少量ずつ添加
した。添加後、内部温度を20°Cに設定し、5時間撹
拌し、反応を終rした。Next, 50.1 g of purified anhydrous 4,4"-diaminodiphenyl ether (25 mol% of the amine component) was added little by little with stirring, and then purified 1, 2,
4.5-benzenetetracarboxylic dianhydride 50.7g
(25 mol % of the acid component) was added little by little with stirring. After the addition, the internal temperature was set at 20°C and stirred for 5 hours to complete the reaction.
反応における酸/アミン(モル比)は0.93であリ、
N、N−ジメチルホルムアミド中0.5重量%溶液の固
有粘度は1.30 (at 30℃)であった。The acid/amine (molar ratio) in the reaction is 0.93,
The intrinsic viscosity of a 0.5% by weight solution in N,N-dimethylformamide was 1.30 (at 30<0>C).
このポリアミック酸溶液をガラス上にフィルムの厚みが
25μmになるように塗布し、80°Cで2時間乾燥さ
せ、その後ガラス上から剥離し、鉄枠で固定し、150
°Cから350°Cまで連続的に昇温加熱し、350°
Cで30分間加熱することにより、低熱膨張のポリイミ
ドフィルムが得られる。このポリイミド7 (/L4)
F?jl1141係数ハ5.5x 1O−6(1/K)
テアッた。This polyamic acid solution was applied onto glass so that the film thickness was 25 μm, dried at 80°C for 2 hours, and then peeled off from the glass and fixed with an iron frame.
Continuous heating from °C to 350 °C, 350 °C
By heating at C for 30 minutes, a polyimide film with low thermal expansion is obtained. This polyimide 7 (/L4)
F? jl1141 coefficient c5.5x 1O-6 (1/K)
Teat it.
(実施例)
ビスマレイミド系接着剤溶液をプレス後の全体の厚みが
30μmとなるように25μmの低熱膨張ポリイミドフ
ィルム上に流延塗布した後、乾燥させ、接着剤を塗布し
た面に厚さ35μmの銅箔を重ね合わせ、フレキシブル
プリント回路用基板を得た。(Example) A bismaleimide adhesive solution was cast onto a 25 μm low thermal expansion polyimide film so that the total thickness after pressing was 30 μm, and then dried, and the adhesive-applied surface was coated with a thickness of 35 μm. A flexible printed circuit board was obtained by overlapping the copper foils.
この片面銅張積層体の180°C引剥がし強さは2.0
kg/cmであり、エツチング後のポリイミドフィルム
の線膨張係数は、7.Ox 1O−6(1/K)であっ
た。The 180°C peel strength of this single-sided copper-clad laminate is 2.0
kg/cm, and the linear expansion coefficient of the polyimide film after etching is 7. Ox 1O-6 (1/K).
(比較f(1)
上記の方法で合成したポリアミック酸溶液を銅箔上に流
延塗布した後、乾燥機に入れ、100℃で30分間、1
50°Cで30分間、200°Cで30分間、250°
Cで20分間、300°Cで10分間それぞれ加熱した
後、90mmφの円筒に巻き付け、300°Cから35
0°Cまで連続的に1時間かけて昇温し、アニールした
。このようにして製造されたフレキシブルプリント回路
用基板の180°C引き剥がし強さは0.7kg/am
であり、エツチング後のポリイミドフィルムの線膨張係
数i、t 20 x 1O−a(1/K) ”Cアラt
=。(Comparison f(1) After casting the polyamic acid solution synthesized by the above method onto copper foil, put it in a dryer and dry it at 100°C for 30 minutes.
50°C for 30 minutes, 200°C for 30 minutes, 250°
After heating at C for 20 minutes and at 300°C for 10 minutes, it was wrapped around a 90mmφ cylinder and heated from 300°C to 35°C.
The temperature was continuously raised to 0°C over 1 hour for annealing. The 180°C peel strength of the flexible printed circuit board manufactured in this way is 0.7 kg/am.
and the linear expansion coefficient i of the polyimide film after etching, t 20 x 1O-a (1/K)
=.
(比較例2)
ビスマレイミド系接着剤溶液をプレス後の全体の厚みが
30μmとなるように25μm市販のポリイミドフィル
ム(カプトン、デュポン社製)上に流延塗布した後、乾
燥させ、接着剤を塗布した面に厚さ35μ黴の銅箔を重
ね合わせ、フレキシブルプリント回路用基板を得た。(Comparative Example 2) A bismaleimide adhesive solution was cast onto a 25 μm commercially available polyimide film (Kapton, manufactured by DuPont) so that the total thickness after pressing was 30 μm, and then dried to remove the adhesive. A 35 μm thick copper foil was superimposed on the coated surface to obtain a flexible printed circuit board.
この片面m張積屠体の180°C引き剥がし強さは1.
5kg/cmであった。エツチング後のポリイミドフィ
ルムの線膨張係数は27x 1O−6(17K)であっ
た。The 180°C peeling strength of this single-sided m-strung carcass is 1.
It was 5 kg/cm. The linear expansion coefficient of the polyimide film after etching was 27 x 1O-6 (17K).
(発明の効果)
本発明により、耐熱性、寸法安定性の優れたカールのな
いフレキシブル回路用基板を得ることができる。(Effects of the Invention) According to the present invention, a curl-free flexible circuit board with excellent heat resistance and dimensional stability can be obtained.
手続補正書 平成2年 6月 14日Procedural amendment June 14, 1990
Claims (2)
ンとの重縮合反応によって得られるポリイミドフィルム
において、 (A)酸無水物として芳香族テトラカルボン酸二無水物
の中から選ばれた1種または2種以上の混合物からなる
芳香族テトラカルボン酸二無水物と、 (B)ジアミンとして4,4’−ジアミノベンズアニリ
ドおよび/または3,4’−ジアミノベンズアニリドと
4,4’−ジアミノジフェニルエーテルの混合物からな
る芳香族ジアミンであり、かつ4,4’−ジアミノベン
ズアニリドおよび/または3,4’−ジアミノベンズア
ニリドが、芳香族アミン成分の30〜100モル%から
なる芳香族ジアミンとを反応させてなる線膨張係数が1
5×10^−^6(1/K)以下である低熱膨張ポリイ
ミドフィルム。(1) In a polyimide film obtained by a polycondensation reaction of an aromatic tetracarboxylic dianhydride and an aromatic diamine, (A) one type selected from aromatic tetracarboxylic dianhydrides as the acid anhydride; or an aromatic tetracarboxylic dianhydride consisting of a mixture of two or more, (B) 4,4'-diaminobenzanilide and/or 3,4'-diaminobenzanilide and 4,4'-diaminodiphenyl ether as diamines; and 4,4'-diaminobenzanilide and/or 3,4'-diaminobenzanilide are reacted with an aromatic diamine consisting of 30 to 100 mol% of the aromatic amine component. The linear expansion coefficient is 1
A polyimide film with a low thermal expansion of 5×10^-^6 (1/K) or less.
フィルムを、金属箔と接着剤で貼合わせることにより、
金属箔エッチング後の線膨張係数が15×10^−^6
(1/K)以下である低熱膨張を特徴とするフレキシブ
ルプリント回路用基板。(2) By laminating the low thermal expansion polyimide film according to claim 1 with metal foil and an adhesive,
Linear expansion coefficient after metal foil etching is 15×10^-^6
A flexible printed circuit board characterized by low thermal expansion of (1/K) or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7344790A JPH03275724A (en) | 1990-03-26 | 1990-03-26 | Flexible printed circuit substrate having low thermal expansion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7344790A JPH03275724A (en) | 1990-03-26 | 1990-03-26 | Flexible printed circuit substrate having low thermal expansion |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03275724A true JPH03275724A (en) | 1991-12-06 |
Family
ID=13518486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7344790A Pending JPH03275724A (en) | 1990-03-26 | 1990-03-26 | Flexible printed circuit substrate having low thermal expansion |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03275724A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043186A1 (en) * | 2010-09-28 | 2012-04-05 | 東レ株式会社 | Resin composition and manufacturing process therefor |
-
1990
- 1990-03-26 JP JP7344790A patent/JPH03275724A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043186A1 (en) * | 2010-09-28 | 2012-04-05 | 東レ株式会社 | Resin composition and manufacturing process therefor |
CN103119085A (en) * | 2010-09-28 | 2013-05-22 | 东丽株式会社 | Resin composition and manufacturing process therefor |
JP5747822B2 (en) * | 2010-09-28 | 2015-07-15 | 東レ株式会社 | Resin composition and method for producing the same |
CN103119085B (en) * | 2010-09-28 | 2015-08-26 | 东丽株式会社 | Resin combination and manufacture method thereof |
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