JPH03268382A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To form vapor-deposition films, having a plurality of kinds of reflectances, inside the same resonator face of laser diodes by a method wherein adhesion-preventing sheets which prevent the vapor-deposition films adhering to parts other than parts to be vapor-deposited are formed at bar holder jigs. CONSTITUTION:Many laser diode bars 1 are set on a bar holder jig 2; they are fixed by using bar clamping bolts 3; after that, adhesion-preventing sheets 10 which have been worked so as to cover desired adhesion-preventing parts are attached to the side of a vapor-deposition source vapor 4 at the bar holder jig 2; then, a vapor deposition operation is executed. Many different kinds of vapor-deposition films can be formed inside the edge face of laser diodes depending on whether the adhesion-preventing sheets 10 exist or not. In addition, when the adhesion-preventing sheets 10 are worked differently, adhesion- preventing regions can be changed. Thereby, the vapor-deposition films having a plurality of kinds of reflectances can be formed in desired regions inside the edge face of the laser diodes situated on the same plane.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor laser device, which forms a vapor deposited film to protect the end face of a semiconductor laser diode or the like and process it to a predetermined reflectance. It is.

[Conventional technology]

FIGS. 2(a) and 2(b) are perspective views showing a conventional vapor deposition method for the interosseous end surface of a semiconductor laser diode. In FIG. 2(a), (1) f-11: semiconductor laser diode bar;
) is a bar holder jig, (3) is a bar tightening pole l-, (
4) indicates the vapor deposition source. In Figure 9(b), (5) is the chip separation groove, and (6) is the resonator end face.

Next, the operation will be explained.

Conventionally, when forming a deposited film on the resonator end face of a semiconductor laser diode, especially when forming a uniform deposited film on a large number of semiconductor laser diode chips at once, the resonator end face of each semiconductor laser diode chip ( 6) form semiconductor laser diode bars (1) lined up on the same plane, set a large number of these semiconductor laser diode bars (1) in a bar holder jig (2), and tighten the bar tightening port (3).
), and a film is formed on the end face (6) of the semiconductor laser diode bar (1) using the vapor deposition source (4).

The thickness of the semiconductor laser diode bar (1) is approximately 10
It is 0 μm.

[Problems to be Solved by the Invention] When a semiconductor laser diode is applied to a compact disc or the like, there is a three-beam system as a tracking mechanism for the disc. In this method, the laser beam is separated into three parts by a diffraction grating, and in addition to the main beam for signal reading, two sub-beams are provided for tracking correction.The tracking state is determined by the intensity of the two sub-beams reflected on the disk. It detects and corrects. In this method, it is unavoidable that one of the sub-beams from the disk returns to the laser diode resonator end face, and the returned light is reflected by the laser diode resonator end face and is irradiated onto the disc again. 1 interferes with the original sub-beam, 2
There was a problem in that the intensity of the two sub-beams was unbalanced, making accurate tracking impossible.

FIG. 3 shows the state in which the sub-beam returns to the end face of the laser diode resonator. In the figure, (7) is a light emitting point, (8) is a sub-beam return point, and (9) is a heat sink. Laser emission point (
The distance from 7) to the sub-beam return point (8) is approximately 50~
For this reason, it was necessary to form a film on the resonator end face with a much lower reflectance near the sub-beam return point than near the light emitting point. However, the conventional deposition method has a problem in that it is impossible to form deposited films having different reflectances within the same resonator plane of a laser chip.

This invention was made in order to solve the above-mentioned problems, and it is possible to improve the performance of laser diodes without impairing the advantage of the conventional technology, which is the ability to form a uniform deposition film on a large number of laser chips at once. An object of the present invention is to obtain a method for manufacturing a semiconductor V-za device that can form deposited films having a plurality of types of reflectance within the same resonator plane.

[Means for Solving the Problems J] A method for manufacturing a semiconductor laser device according to the present invention performs vapor deposition by providing a bar holder jig with an anti-deposition plate that prevents the deposition film from adhering to a portion other than the portion to be vapor-deposited. This is how it was done.

[Function] The vapor deposition method of the present invention forms multiple types of vapor deposited films within the same plane by attaching a deposition prevention plate to a par holder jig so that the vapor deposited film is not formed on parts other than the part to be vapor deposited. be able to.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

In Figure 1, (1) is a laser diode bar, (2
) is a par holder jig, (3) is a bar tightening pole),
(4) is the vapor deposition source vapor, and (10) is the deposition prevention plate.

Next, the operation will be explained.

Similar to the conventional technology, a large number of laser diode bars (1) are set in a rubber holder jig (2), fixed with bar tightening bolts (3), and then processed to cover the desired anti-seize area. The deposition prevention plate (10) is attached to the vapor deposition source vapor (4) side of the par holder jig (2) to perform thin deposition.

Depending on the presence or absence of this deposition prevention plate, it is possible to vary the deposition 1 [t-laser diode end facet] in a wide variety of ways, and by changing the processing of the deposition prevention plate, the deposition prevention area can be changed.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to deposit a vapor deposition film having several types of reflectance in a desired area within the end face of a laser diode that is on the same plane, which facilitates workability and provides a stable laser beam. This has the effect of a diode.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment of the present invention, FIG. 2 (aHb) is a perspective view showing a method for manufacturing a conventional semiconductor laser device, and FIG. 3 is a perspective view showing a method for manufacturing a conventional semiconductor laser device. FIG. 3 is a perspective view showing a light emitting point and a returning light point. In the figure, (1) indicates the laser diode bar, (2) the huber holder jig, and (10) the adhesion prevention plate.

Claims (1)

[Claims] A holder jig in which bars in which the cavity end faces of a plurality of semiconductor laser chips are lined up in the same plane is set so as to be deposited on the cavity end face is equipped with a holder jig that prevents the deposition film from being formed on a desired portion of the cavity end face. A method for manufacturing a semiconductor laser device, characterized by attaching and detaching plates and obtaining two or more types of deposited films.