JPH03268356A - Formation of contact on wall extending to board - Google Patents

Abstract

PURPOSE: To minimize a cell area on a substrate and increase integration density for each cell by a method, wherein cell transistors are formed in a sidewall of a trench provided in the substrate, and a word line and a bit line mutually intersect in an upper part of the trench. CONSTITUTION: A memory cell is formed in a P<+> -type silicon substrate 32 having a P-type epitaxial layer 34 and comprises a bit line 20 composed of an N<+> -type buried layer, a bit line insulating oxide layer 42, a word line 14 composed of N<+> -polysilicon, an N<+> -diffused region 48 forming a channel 44 of transistors, a gate oxide layer 46 and a source region. The memory cell has an N<+> - polysilicon region 50, forming one pole plate when a P<+> -type substrate 32 is used as the other capacitor, namely a grounding side pole plate, and an oxide/ nitride/oxide track 52 forming an insulating layer between both pole plates 32 and 50 of this capacitor. Thereby, an area where a cell occupies the substrate can be reduced.

Description

[Detailed description of the invention]

[0001]

[Industrial application field]

The present invention relates to semiconductor devices, and particularly to dynamic random access memories, or dynamic RAMs (hereinafter referred to as dRAMs). [0002]

[Conventional technology]

The development of large-scale monolithic dRAM poses a number of issues, one of the most important of which is the need to shrink the dimensions of individual cells in order to increase the number of memory cells that can be integrated onto a single chip. The question is what can be done to prevent the incidence of soft chives from increasing. Large-scale dRAM uses silicon as the main S component material, and each memory cell adds charge to one of the above capacitors, whose source is connected to the capacitor, whose drain is connected to the bit line, and whose gate is connected to the word line. It operates so that it becomes a logic 1 when it is not added, and becomes a logic O when it is not added. Conventionally, the cell capacitor in this case is formed by an inversion layer separated from the upper electrode layer by a thin oxide layer and separated from the substrate by a depletion layer. However, in order to maintain stable circuit operation, it is necessary to set the capacitance of the capacitor to a large value that provides a sufficient S/N ratio. It has to be bigger. In addition, such MOS capacitors are susceptible to charges generated in the substrate by alpha particles (a 5 MeV alpha particle can generate more than 200 hemtoclones (fC) of harmful electrons), noise intruding from the substrate, etc. , PN junction leakage over the entire area of the capacitor, and subthreshold leakage (leakage below the threshold voltage) of the MOS FET in the cell. d
The charge stored in one RAM is normally 250 fC, so if the power supply voltage is 5μ, the capacitance of the capacitor needs to be 50 fF, and if the thickness of the physical dioxide for charge storage is 150A. required a capacitor area of approximately 20 microns square. In a memory cell using a conventional two-dimensional structure dRAM, this defines the minimum size of the cell. [0003] One attempt to address these problems is JA by Joly et al.
Dynamic RAM Ce1l in
Recrystallized Polysili
c. nJ (4IEEE Elec, Dev,
Lett, 8.1983), which attempts to form all of the basic elements of the cell, including the access transistor and charge storage capacitor, in a layer of beam-recrystallized polysilicon deposited on an oxide layer on a silicon substrate. . In this case, the bit line is included in the recrystallized polysilicon layer, and turning on the transistor causes charge to flow into the charge storage region. Highly doped recrystallized polysilicon surrounded by thermally grown oxide on the top, bottom and three sides is used as the charge storage region. The charge storage capacity obtained in this way is approximately the same as that of a normal capacitor with an equivalent storage area, because the electrodes above and below the region are separated from the charge storage region in the recrystallized polysilicon by a thin oxide layer. It will be doubled. Moreover, this charge storage region is isolated by the underlying oxide from charges injected into the substrate from circuits around the region, and from charges penetrating into the substrate due to alpha particles and other radiation that causes soft nila. Become. Additionally, the presence of a thick oxide layer below the bit line and complete sidewall oxide isolation may reduce the capacitance of the bit line. However, even if the capacity is twice the normal capacity, it is impossible to make the area occupied by the cell capacitor sufficiently small. [0004] Another attempt to miniaturize dRAM is to extend the capacitor plates into the interior of the substrate. Such a capacitor is called a corrugated capacitor, and is described in “A Corrugated Capacitor” by H. Sunami et al.
Capacitor Ce1l (CCC)f
or Megabit Dynamic MO5
MemoriesJ (IEEE IEDM T
ech, Digest 8061982) and the same (H, Sunami et al. (7) “A Corrugate
d Capacitor Ce1l (CCC)
for Megabit Dynamic MO
S MemoriesJ (4IEEE Ele
c, Dev, Lett. 90.1983), and also Kou, Ito et al. (7) ``
An Expert mental 1Mb D
RAM with 0n-Chip Volta
ge LimterJ (1984 IEEE
l5SCC Digest of Tech. This is described in Paper 282). This corrugated capacitor extends 2.5 microns deep inside the silicon substrate and requires CV
Using a silicon dioxide mask, trenches are created using a conventional CCl4 reactive sputter etch method.
nch), wet etching is performed to remove scratches and dirt caused by dry etching. After forming the trench in this way, silicon dioxide/silicon nitride/
A three-layer charge storage layer of silicon dioxide is formed on the trench walls, and the trench is then finished by filling with LPCVD polysilicon. This is because such a corrugated capacitor, in the case of a three-layer, 7-micron cell with a capacitance of 60 fF, has a capacitance more than seven times that of a normal cell. [0005] A third attempt to reduce the area occupied by a cell capacitor is similar to the method of forming trenches as described above, and is described, for example, in "Submic" by E. Arai.
ron MOS VLSI Process
TechnologiesJ (IEEE IED
M Tech, Digest 19.1983
) JA Submicron by Yani Minegishi et al.
CMO3Megabit Dynamic RA
M Technology Using Dop
ed Face Trench Capacit
or Ce1lJ (IEEE IEDMTec
h, Digest 319.1983) and T.
, -E-Rie et al. “Depletion T
wrench capacitor technology
ogyfor Megabit Level M
OS dRAMJ (4IEEE Elec,
Dev. This is a description of a memory cell having a similar configuration. Such a trench capacitor can have a large capacitance per unit area of the substrate simply by using a deep trench, and according to the three papers mentioned above, it is manufactured as follows. That is, first, a silicon substrate with a crystal orientation of (100) P type and a resistivity of 4-5 ohm cm is coated with a width of 0.4-cm.
A 1.0 micron trench is formed using an electron beam direct writing method. Then about 14mm Torr
etch a 1-3 micron deep trench by reactive ion etching (RIE) with CBrF3 under a pressure of RI is removed from the trench surface by
Remove scratches caused by E treatment. Next PH3/5iH4
PSG (phosphorus silicate glass) is deposited by CVD using a 102 gas system to diffuse phosphorus into the trench surface layer, and the PSG is etched away with hydrofluoric acid. Next, 150-50OA of SiO was applied on the trench surface.
2 was grown in dry oxygen or by CVD.
i3N4 was deposited to a thickness of -g500A, and finally LPGVD
Fill the trench with polysilicon. In this way, the capacitance per unit area of the trench sidewall is comparable to the capacitance per unit area of a normal capacitor, and therefore a capacitor with a large trench depth increases the charge storage area per unit area of the substrate. By doing so, it is possible to reduce the substrate area of the cell. [0006] On the other hand, it is also a well-known technique to perform isolation using trenches, and its research has been widely conducted, for example, as described in "De e p Tre
nch l5olated CMO3Device
sJ (IEEE IEDM Tech, D
237.1982) and “A 5 study of the Tre
nch Inversion Problem
in the trench CMO3Tech
nologyJ (4IEEE Elec, D
ev, Lett, 303.1983) and A
. “U-Groove l5olat” by Hayasaka et al.
ion Technique for High
5peed Bipolar VLSI'
sJ (IEEE IEDM Tech, D
62.1982) and “An l5olation Technolo” by H. Goto et al.
gy for High Performance
Bipolar Memories--I○P-I
IJ (IEEE IEDM Tech, D
igest 58.1982) and “High-3peed Latchup-Fr” by T. Yamaguchi et al.
ee 05-μm-Channel CMO3Us
ing Self-Aligned TiSi
and Deep Trench l5ola
tion TechnologiesJ (IEE
E IEDM Tech, Digest 5
22.1983) and JDir by S. Koyama et al.
ctions in CMO3Technolo
gyJ (IEEE IEDM Tech,
Digest 151.1983) and “Character Ization an
dModelling of the Tr
ench 5surface Problem f
or the Trench Isolated
CMO5TechnologyJ (IEEE I
EDM Tech, Digest 23.19
83) etc. describes this. The isolation trenches described therein are formed in a manner similar to that previously described for the fabrication of trenched corrugated capacitors. i.e., patterning (typically done using an oxide mask), CBrF, CC1, C
Processing procedures such as RIE processing using l2H2, CCl0°, etc., etching processing, thermal oxidation of the sidewall portion (accompanied by formation of a nitride layer by LPGVD), and further embedding with polysilicon are used. [0007]

[Problems to be solved by the invention]

However, using a trench capacitor reduces the dR
This does not completely solve the problem of miniaturizing AM cells, and in any case, such as a vertically arranged FET or a substantially vertically arranged trench capacitor,
At present, the area occupied by the cell on the substrate is still large. [0008]

[Means for Solving the Problems] The present invention forms a cell transistor on the side wall of a trench provided in a substrate in which a cell capacitor is formed, and a word line and a bit line intersect with each other above the trench. The present invention provides a one-transistor idRAM cell structure and an array of such cells, which allows individual cells to be separated by stacking the transistor on top of the capacitor to minimize the cell area on the substrate. This is to increase the integration density. In one embodiment of the invention, one plate of the capacitor and the channel region of the transistor are formed in the bulk sidewall of the trench, and the other plate of the capacitor and the gate region of the transistor are formed in the trench. Formed by filling polysilicon and separated by an oxide layer inside the trench. Note that the signal charge is accumulated in the capacitor plate formed of the polysilicon. [0009]

【Example】

FIG. 1A shows a one-transistor, one-capacitor cell connected to a bit line and a word line as an embodiment of the present invention, and its operation is as described below. That is, the capacitor 12 stores a charge representing one bit of information (for example, a state in which no charge is stored represents a logic O, and a state in which a charge corresponding to a potential of 5 volts between the plates of the capacitor is stored represents a logic 1). ). This one bit of information is accessed (read or write a new bit) each time a voltage is applied to word line 14 connected to gate 16, thereby turning on transistor 18. This transistor 18
When the bit line 20 is turned on, the capacitor 12 is brought into conduction with the bit line 20, and reading or writing is performed. At this time, it is necessary to periodically refresh the charge in order to compensate for the loss of charge stored in the capacitor 12 due to leakage current or other causes, and this is the origin of the name dynamic RAM (dRAM). [0010] FIG. IB is a plan view showing a part of the array in which the memory cells 30 of the above embodiment are not arranged at the intersections of each line in a dRAM array consisting of a word line 14 and a bit line 20, and the bit line 20 is It is formed to pass below the word line 14. The memory cells 30 extend below these lines in the substrate to maximize memory density. As shown in the figure, if the minimum figure size is f and the minimum allowable layer spacing dimension (minimum allowable amount of printing error) is R, then the area of each cell is (2(f+R)
)) becomes. Thus, for example, if the minimum feature size is 1.0 microns and the minimum interlayer alignment tolerance is 0.25 microns, the area of each cell will be approximately 6.25 square microns. [0011] FIG. 2 is a cross-sectional view of the memory cell 30 as an embodiment of the present invention. This memory cell 30 is formed on a P' type silicon substrate 32 having a P type NIP layer 34, and includes a bit line 20 made of an N'' type buried layer, an oxide layer 42 for bit line insulation, and an N type silicon substrate 32. Silicon word line 1
4, a channel 44 of the transistor 18, a gate oxide layer 46 of the transistor 18, an N diffusion region 48 forming the source region of the transistor 18, and the P type substrate 32 connected to one side of the capacitor 12, that is, the ground side. An N polysilicon region 50 that forms the other plate of the capacitor 12, and an oxide/nitride/oxide stack 52 that forms an insulating layer between the plates of this capacitor 12.
and has. The cross-section of memory cell 30 in FIG. 2 corresponds to arrow line 2--2 in FIG. IB, and therefore the cross-sectional structure of trench-formed capacitor 12 and transistor 18 will be clear from FIG. IB. [0012] In the memory cell 30 configured as described above, the capacitor 12 is connected to one of the electrode plates by the regions 48 and 50.
The other plate is formed by a substrate 32 and a shrimp layer 34, respectively. However, in this case, by making the impurity concentration of the shrimp layer 34 much lower than that of the P type substrate 32, the capacitance of the N /P junction between the diffusion region 48 and the shrimp layer 34 and the N' type polysilicon region 50 / The capacitance of the stack 52/P-type NIP layer 34 is much smaller than the capacitance of the N 2 silicon region 50/stack 52/P 2 substrate 32, and is negligible. Further, as explained next, the plate area of the shrimp layer 34 is the same as that of the substrate 3.
For this reason, the capacity of the shrimp layer 34 itself is not a very important factor. In addition, when the cross section of the trench to be formed is 1×1 micron and the depth is 5 microns, this 1 micron depth shall be obtained by the shrimp layer 34 and the bit line 20 layer, and in this case, the pole of the capacitor 12 The plate area will be approximately 17 square microns. Also, the illustrated P' substrate 32 is a ground layer common to all memory cells 30 in the array shown in FIG. IB. [0013] The transistor 18 of each memory cell 30 has a bulk silicon configuration with a polysilicon gate, the channel 44 is part of the PE layer 34, and the source region 48
(which is also part of one plate of capacitor 12) and drain region 20 (which is also bit line 20) are N diffused in P epi layer 34 and gate oxide layer 46.
is grown on the trench face of the P layer 34, and the gate is part of the polysilicon word line 14 layer. Although the insulating oxide layer 42 is of considerable thickness, the word line 14 as a gate still
The structure overlaps the source and drain regions of the transistor. [0014] Next, an embodiment of a method for manufacturing the memory cell 30 having the above configuration will be described, and through this description, the dimensional and material characteristics of the memory cell 30 will also be clarified. FIGS. 3A to 3G show this production procedure. [0015] 1. A P silicon substrate 32 with a crystal orientation of (100) and a resistivity of 1xlO-2 ohm/cm or less has a carrier concentration of 2x1016/cm3 and a final thickness of 2.0cm after all heat treatments are completed. A P epi layer 34 is grown to a thickness of 0 microns. After field oxide layer 36 and p5 channel stop 38 are formed by conventional methods, a stress relief oxide layer is grown and LPVD nitride is deposited on the oxide layer. Next, by patterning and plasma etching the active region (the bit line 20 and the periphery of the cell array), nitride and oxide outside the active region are removed, and boron is implanted using the nitride layer as a mask to remove carriers. Channel stop 38 with a concentration of 1x”1017 pieces/Cm3
After forming the field oxide layer 36 to a depth of 400 Å, the field oxide layer 36 is grown to a thickness of 800 OA. Then, after removing the nitride layer, a portion of the active region where the bit line 20 will be formed is defined by photolithography, and arsenic is implanted so that the carrier concentration is 1×10 20 /cm 3 . These bit lines 20 are formed to a depth of 2000A. Thereafter, the photoresist was removed and a protective film made of oxide was formed. The resulting structure is shown in FIGS. 3A and 3B. Here, FIG. 3A is a cross-sectional view along the bit line 20, and FIG. 3B is a cross-sectional view in a plane perpendicular to the bit line 20. Note that the line width of the bit line 20 is approximately 1.5 mm as described with reference to Figure IB.
Micron. [0016] 2. To form a trench with a cross section of 1 micron, a trench with a thickness of 1
A micron plasma enhanced CVD oxide layer 64 is deposited and patterned. A trench is etched to a depth of 1.25 microns using HCI RIE using patterned oxide layer 64 as a mask. After removing scratches and dirt caused by the RIE process from the walls of the trench thus formed by wet etching with acid, a protective oxide layer 65 is thermally grown on the walls and bottom of the trench, and LPGV is used to treat the sidewalls of the trench.
Deposition of nitride 66 by D is used to protect the oxide layer on the sidewalls to reduce further diffusion during subsequent processing steps. The thickness of the oxide layer 65 is, for example, approximately 20 OA, and the thickness of the nitride layer 66 is, for example, 100 OA. The structure thus obtained is shown in FIG. Note that this FIG. 3C is similar to the following FIGS. 3D to 3G, but all of them are views showing a cross section along the bit line 20. [0017] 3. Next, the RIE process using HCI is performed again to further dig the trench. In this case, the oxide layer 64 is also slightly eroded, but this layer does not cause any particular problem because the initial deposition thickness of this layer is sufficiently large. When the trench is now approximately 5.0 microns deep, the trench is cleaned as described above;
After thermally growing the oxide to form the 100 Å thick insulating layer stack 52 of the capacitor 12, a 75 Å thick nitride is deposited by LPCVD. The nitride layer is then thermally oxidized to complete the dielectric properties, resulting in an initial oxide/nitride/oxide layer stack 52. The trench thus formed is filled with N 2 impurity-implanted polysilicon (region 50) as shown in FIG. 3D. [0018] 4. After planarizing the polysilicon region 50 by, for example, spin coating on photoresist, the surface of the polysilicon region 50 and the inside of the trench 30 are planarized.
Complete plasma etch treatment down to 0OA. In this case, the plasma etch inside the trench is performed from the top of the insulating stack 52 down and over the substrate 32. As will be described later, if the polysilicon region 50 extends slightly below the top end of the stack 52 and above the substrate 32, the top end position of the polysilicon region 50 does not have to be very precise. See Figure 3E. [0019] 5. Remove exposed portions of stack 52 (in this case, nitride layer 66 is much thicker than stack 52;
In removing exposed portions of stack 52, nitride layer 66 is removed.
are not significantly removed). A diffusion region 48 having a thickness of at least 2000 Å is then formed by vapor phase diffusion of phosphorus (FIG. 3F). In addition, in FIG. 3F, the diffusion region 48 is 2
Although they appear to be formed in places, these regions are part of a single annular region surrounding the trench and forming the source of the transistor 18. However, at this time, the gate oxide layer of this transistor 18 has not yet been formed.

6. After N-type polysilicon is deposited by LPGVD, it is planarized, and plasma etched is completely performed on the plane and immediately below the oxide layer 65 and oxide layer 66 in the trench. This N 2 polysilicon layer becomes a part of the polysilicon region 50 and increases its thickness, and is indicated by the same reference numeral as the polysilicon region 50 in the drawing (FIG. 3G). In this case as well, the polysilicon region 50 sufficiently overlaps the diffusion region 48 to provide good electrical contact therebetween, and the oxide layer 66 and nitride layer 65 are fully exposed to form a transistor. If the gate 18 reliably covers its channel region, the position of the upper end of the polysilicon region 50 does not have to be very strict, but this will also be discussed later. [0021] 7. Grow a thermal oxide layer 56 on the exposed portions of polysilicon region 50 and diffusion region 48 to a thickness of approximately 1000 Å. In this case, the oxide layer 65 generates a bird's beak at its lower edge, but growth is inhibited by the nitride layer 66 at other locations. This thermal oxide layer 56 is formed to reduce the source/gate parasitic capacitance of the transistor 18, and may be omitted depending on the case. Next, after etching the nitride layer 66, a wet etch is performed to remove the oxide layer 65 (and a portion of the thermal oxide layer 56, which is much thicker than the core layer), thereby removing the channel 44 and diffusion. A portion of region 48 is exposed. This exposed channel 44
gate oxide layer 46 to a thickness of 250 Å (which increases the thickness of thermal oxide layer 56) and then N
Deposition and patterning of a polysilicon layer 14 to form the word line 14 results in a cell having the cross-sectional structure described in connection with FIG. [0022] Next, a second embodiment of a dRAM according to the present invention (shown as a memory cell 130 in FIG. 4C) and a second embodiment of a fabrication method according to the present invention will be described below with reference to FIGS. 4A to 4D. do. These figures 4A to 4D correspond to figures 2 and 3.
A-FIG. 3G are also similar cross-sectional views. [0023] 1. After growing a thermal oxide layer 135 with a thickness of 100 OA on a P' substrate 132 with a crystal orientation of (100), a thermal oxide layer 135 with a thickness of 1
A micron plasma enhanced CVD acid (tJI layer 137) is deposited. This oxide layer 137 is then patterned to form a trench of 1 square micron in cross-section, followed by HCI using several layers as a mask. A RIE process is performed to etch the trenches to a depth of 5 microns.The trench sidewalls are then cleaned and a capacitor oxide layer 152 is thermally grown on the sidewalls and the trench bottom, followed by a 4 micron arsenic implant. Polysilicon area 1
50 is deposited by sputtering (FIG. 4A). [0024] 2. Perform a wet etch process on each of the above oxide layers. This removes the exposed portion of capacitor oxide layer 152 and lifts off the portion of polysilicon region 150 above oxide layer 137. Next, thickness 2
By depositing a 1-2 ohm cm silicon nitride layer 144 of 000A and performing ion implantation for several layers,
The N hit line 20, a layer 120 that will become the drain of the transistor 18, and a region 148 that will become the source of the transistor 18 are formed (FIG. 4B). In this case, since the region 148 is formed on the upper surface of the polysilicon region 150, it is naturally expected that it will have various defects; Since it is an implanted part, such defects do not pose much of a problem. [0025] By performing 3 and 7 anneal treatments, the region 148 is slightly expanded by promoting diffusion of the implanted impurity. Gate oxide layer 146 is then thermally grown to 250 Å, followed by N 2 polysilicon deposition and patterning to form word line 14 . The structure of the dRAM cell 130 thus obtained is shown in FIG. [0026] Next, a third embodiment of the dRAM according to the present invention will be described. This third embodiment, designated by the reference numeral 160, is a variant of the dRAM cell 130 described above, and is produced by a third method embodiment, which is a variation of the second embodiment of the method according to the invention, as described above. It is something that will be done. In the following description, the same reference numerals as above indicate corresponding items in the above embodiment. [0027] 1. After performing step (1) of the second embodiment, the oxide layer is etched in step (2). [0028] 2. LPCVD polysilicon layer 144 with a thickness of e2000A
By implanting impurities into this, N
Form layers 120 and 148. The resulting configuration is equivalent to that of FIG. 4B, except that in this case regions 120, 144, 150 are polysilicon layers rather than shrimp layers as in the second embodiment [0029] 3. The regions 120 and 144 are converted into a shrimp layer on the substrate 132 by annealing and phase-phase Nipitaxing, but as a result, parts of the regions 148 and 150 become single crystal. The broken waveform line in FIG. 4D is
This conceptually shows such partial single crystallization. However, among such crystallized regions, only the region 144 () (the channel region of the transistor 18) has an effect on the operating characteristics. Note that the high temperature used in this process causes diffusion of impurity ions, causing the region 148 to bulge as shown in FIG. 4D. [0030] The N''J layer 120 is then patterned and etched to form the bit line 20. [0031] 4. After growing the gate oxide layer 146 to a thickness of 250 nm, The N-type polysilicon layer 14 is deposited, patterned and etched to form word lines 14.
form. The cross-sectional structure of the dRAM cell 160 thus obtained is shown in FIG. 4E. [0032] The operations of the dRAM cells 130 and 160 described above are as follows.
The operation is equivalent to that of the cell memory cell 30 described earlier. That is, the drain 20, channel region 144, source 148, and gate 14 of the transistor 18 are all arranged vertically, and one plate of the capacitor 12 is connected to the N+ region 148/150.
The other plate is each formed by a P 2 substrate 132, and a dielectric layer is formed by an oxide layer 152 and a reverse bias junction between region 148 and substrate 132. [0033] Note that the above step (3) of the method for manufacturing the cell 160 is changed,
The N layer 120 may be patterned and etched after solid phase nipitaxing is performed to define and implant channel stop regions between the plurality of bit lines 20. The method for forming the channel stop region in this case is the first method according to the present invention.
The method of forming the channel stop 38 between the bit lines 20 in the embodiment shown in FIG. [0034] Various embodiments of the dRAM and the fabrication method thereof according to the present invention have been described above, but these embodiments differ from each other in terms of each dimension of the deposit, the shape of the trench, the depth of impurity implantation, the type of alternative material, etc. Changes may be made as appropriate, ion diffusion may be used instead of ion implantation, wet etching may be used instead of dry etching, a halogen carbon compound may be used instead of HCI in the RIE method, etc.
Omitting the protective nitride layer 66 and making various other changes will be readily apparent from the foregoing description.

[Brief explanation of drawings]

FIG. 1A and B are a schematic diagram showing an equivalent circuit of a dRAM cell according to the present invention and a plan view showing a cell array using the cell, respectively.

FIG. 2 is a cross-sectional view of a first embodiment of a dRAM cell according to the invention taken along line 2-2 in FIG. IB;

FIGS. 3A to 3G are diagrams showing a series of steps in manufacturing the dRAM cell according to the first example according to the first example of the cell manufacturing method according to the present invention.

4A to 4E are diagrams showing a series of steps when manufacturing dRAM cells according to the second and third embodiments of the cell manufacturing method according to the present invention; be.

[Explanation of symbols]

12 Capacitor 14 Word line 16 Gate 18 Transistor 20 bit line 30.130,160 memory cell 32.132 Board 34.144 Shrimp layer 42 Oxide layer 44 channel 46.146 Gate oxide layer 48 Diffusion area 50.150 Polysilicon area 52.152 Oxide/Nitride/Oxide stack

[Document core]

[Figure 1]

[Figure 2] drawing

[Figure 3]

[Figure 4] E

Claims (1)

[Claims] 1. A method of forming a contact in a wall extending into a substrate substantially perpendicular to a surface of the substrate, comprising: (a) forming an insulating layer on the wall; (b) at least the wall. forming a conductor along a portion of the wall and including a portion of the device; (c) removing the conductor along a portion of the wall; (d) removing a portion of the insulating layer. and (e) forming a contact with the wall in at least a portion of the removed portion of the insulating layer using a conductive material in contact with the conductor. A method of forming contacts on walls that extend into a substrate.