JPH03258002A - Diode phase shifter - Google Patents

Abstract

PURPOSE:To easily absorb the dispersion in the characteristic of a diode by inserting an adjustment sheet made of a dielectric film between a dielectric outer layer board and a conductor line on a dielectric inner layer board. CONSTITUTION:An adjustment sheet 19 inserted between a dielectric upper layer board 14 and a dielectric middle layer board 4 is made of a dielectric film having a same characteristic as that of the dielectric upper layer board 14 and the thickness is adjusted by selecting number of the dielectric film. That is, the thickness of the dielectric upper layer board 14 is selected slightly thinner and the deficient thickness is corrected by using the adjustment sheet 19 made of prescribed number of dielectric films inserted between the dielectric upper layer board 14 and the dielectric middle layer board 4. Thus, the impedance of line conductors 8-10 is varied in matching with the characteristic of a diode 11 and the requested performance is satisfied with excellent yield.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a diode phase shifter in which the thickness of a dielectric outer layer substrate can be equivalently adjusted.

[Conventional technology]

Figure 4 shows a conventional three-plate strip line shown in Japanese Utility Model Publication No. 62-36323, for example.
FIG. 5 is an exploded perspective view of Pitt's diode phase shifter, and FIG. 5 is a cross-sectional view taken along line A-A.

In the figure, 1 is a dielectric lower substrate as one of the dielectric outer layer substrates, and 2 is a ground conductor coated on the entire lower surface thereof. Reference numeral 3 designates a metal case in which the dielectric lower substrate 1 is housed so that the ground conductor 2 is in good electrical contact with it. Reference numeral 4 is placed on the dielectric lower substrate 1, and includes a main line 5, a 3 dB hybrid coupler composed of a coupled line, a red coupler 6, a DC block capacitor 7 for separating the DC bias from the external circuit, and a reflected wave phase converter. Line conductors such as a circuit line 8, a low impedance line 9 having a length of 1/4 wavelength used for a bias circuit, and a high impedance line 10 having a length of 1/4 wavelength used for a bias circuit are formed by photo-etching method, etc. This is a dielectric intermediate layer substrate formed on both sides of the substrate.

Reference numeral 11 denotes a diode connected to the tip of the reflected wave phase conversion circuit line 8 via a gold wire or the like (not shown). This diode includes a PIN diode and a varactor diode, but since the same applies to both, the PIN diode will be described below. 12 is a bias supply terminal formed on the dielectric intermediate substrate 4 together with the front wiring path conductor by photo-etching;
Reference numeral 3 denotes a bias terminal mounted on the metal case 3 and connected to the bias supply terminal 12 via a metal wire (not shown). Reference numeral 14 designates a dielectric upper layer substrate as one of the dielectric outer layer substrates, which is disposed on the dielectric middle layer substrate 4 and has the ground conductor 2 adhered to its entire upper surface. 15 is a dielectric lower layer substrate 1, a dielectric middle layer substrate 4, and a dielectric upper layer substrate 1.
4, and is in good electrical contact with the ground conductor 2 of the dielectric upper layer substrate 14. Reference numeral 16 is a connector for connecting this diode phase shifter to an external circuit.

Next, the operation will be explained. Here, FIG. 6 is a circuit diagram for explaining the operation, and only 1 bin is shown for the sake of simplicity. In the figure, reference numeral 17 denotes a bias circuit consisting of a low impedance line 9 and a high impedance line 10 each having a length of 1/4 wavelength, and serves as a bias means for applying a DC bias to the PIN diode 11;
8 is a reflected wave phase conversion circuit including a 70 PIN diode 11.

Radio waves incident from the main line 5 on the input side pass through a DC block capacitor 7. This DC block capacitor 7 is connected to the PIN diode 1 via a bias circuit 17.
It plays the role of separating the DC bias supplied to 1 from the external circuit.

Next, the radio wave that has passed through the DC block capacitor 7 enters the coupler 6 composed of a coupled line, and is connected to the terminals Tl and T.
The power appears to be divided equally between the two. These terminals 'r1
．． The reflected wave phase conversion circuit 18 connected to T2 is PI
It is designed so that the phase change of the reflected wave obtained by switching the polarity of the DC bias applied to the N diode 11 becomes a predetermined value.

The radio wave reflected by the reflected wave phase conversion circuit 18 passes through the DC blocking capacitor 7 on the output side and appears on the main line 5 on the output side. However, when the polarity of the bias applied to the PIN diode 11 is switched, Since the reflected wave phase conversion circuit 18 is designed as described above, the phase of the output radio wave undergoes a predetermined phase change, thereby forming a diode phase shifter.

In this type of diode phase shifter configured with a triplate strip line, the width W of the metal case perpendicular to the direction of radio wave propagation is designed to be wide enough to allow and interrupt radio wave propagation in waveguide mode. .

In this case, if there are variations in the characteristics of the PIN diode 11 due to manufacturing lofts, etc., the characteristics of the diode phase shifter itself will vary.

Here, the impedance of the reflected wave phase conversion circuit line 8 to which the PIN diode 11 is connected is the dielectric upper layer substrate 1.
4 and the thickness of the dielectric lower substrate 1, and the same applies to the impedance of the low impedance line 9 and the high impedance line 10 that constitute the bias circuit 17. Therefore, the difference in thickness 1. Several types of dielectric upper layer substrates 14 are prepared, and if the assembled diode phase shifter does not satisfy the required performance, the dielectric upper layer substrate 14 can be changed to one with a different thickness. This absorbs variations in the characteristics of the PIN diode 11.

[Problem to be solved by the invention]

Since the conventional diode phase shifter is configured as described above, it is necessary to prepare various kinds of dielectric upper layer substrates 14 with different thicknesses, and it is difficult to control the thickness. Variations also occur, resulting in large material losses.Furthermore, if the characteristics of the PIN diode 11 deviate, the required performance cannot be satisfied, and the pattern itself of each line conductor on the dielectric intermediate substrate 4 must be remade. To? In addition, there were problems such as poor yields.

This invention was made to solve the above-mentioned problems, and aims to provide a diode phase shifter that can easily absorb variations in diode characteristics and has a high yield.

[Means to solve the problem]

The diode phase shifter according to the present invention has an adjustment sheet made of a dielectric film inserted between a dielectric outer layer substrate and a dielectric middle layer substrate.

[For production]

The adjustment sheet in this invention is composed of a dielectric film and is inserted between the dielectric outer layer board and the conductor line on the dielectric inner sound board, and by adjusting the number of dielectric films, the adjustment sheet can be adjusted according to the characteristics of the diode. By changing the impedance of the line conductor, we realize a diode phase shifter that can satisfy the required performance and yield.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is an exploded perspective view showing the diode phase shifter according to this embodiment, and FIG. 2 is a sectional view taken along the line A--A. In the figure, 1 is a dielectric lower layer substrate as one of the dielectric outer layer substrates, 2 is a ground conductor, 3 is a metal case, 4 is a dielectric middle layer substrate, 5 to 10 are main lines as line conductors, couplers, and DC Block capacitor, reflected wave phase conversion circuit line, low impedance line, and high impedance line, 11
is a diode (PIN diode), 12 is a bias supply terminal, 13 is a bias terminal, 14 is a dielectric upper layer substrate as one of the dielectric outer layer substrates, 15 is a metal case top cover,
Reference numeral 16 denotes a stopper seat, which is the same as or corresponds to the conventional ones denoted by the same reference numerals in FIGS. 4 and 5, and therefore a detailed explanation will be omitted.

Further, 19 is an adjustment sheet inserted between the dielectric upper layer substrate 14 and the dielectric middle layer substrate 40.

This adjustment sheet 19 is made of a dielectric film having the same characteristics as the dielectric upper layer substrate 14, and its thickness can be adjusted by changing the number of dielectric films.

Next, the operation will be explained. Here, since the basic operation is the same as that of the conventional diode phase shifter shown in FIGS. 4 and 5, the operation of the adjustment sheet 19 will be mainly explained.

As described above, the impedance of the reflected wave phase conversion circuit line 8, the low impedance line 9, and the high impedance line 10 changes depending on the thickness of the dielectric upper substrate 14 or the dielectric lower substrate 1. On the other hand, since the PIN diode 11 is an active element, its characteristics vary depending on the individual, particularly depending on the manufacturing loft. Therefore, when a diode phase shifter is assembled using such a PIN diode 11, there will be fluctuations in its performance. If a performance test of a diode phase shifter reveals that it does not meet the required performance, readjustment is often required. In such adjustment work, it is desirable to be able to readjust by simply changing some values without significantly changing the current state.

In this embodiment, the thickness of the dielectric upper layer substrate 14 is set to be slightly thinner in advance, and the dielectric upper layer substrate 14 is
The adjustment sheet 19 made of a predetermined number of dielectric films inserted between the substrate and the dielectric intermediate layer substrate 4 makes up for the shortage. That is, when the thickness of the dielectric upper substrate 14 is T, the thickness of the dielectric film is tSvI4, and the number of dielectric films in the alignment sheet 19 is n, the substantial thickness of the dielectric upper substrate 14 is (T+n- t) and 7'c. As a result of the performance test of the diode phase shifter, if the required performance is not satisfied, the thickness of the dielectric upper layer substrate 14 is equivalently adjusted by changing the number of dielectric films of this adjustment sheet 19. are doing. Therefore, the substantial thickness of the dielectric upper substrate 14 can be adjusted in units of t.

In this way, by changing the number of dielectric films of the adjustment sheet 19, the thickness of the dielectric upper layer substrate 14 is equivalently changed, and the reflected wave phase conversion circuit line 8 on the dielectric middle layer substrate 4 has a low impedance. Line 9, high impedance line 1
PIN diode 1 using impedance of 0 etc.
Adjust according to the characteristics of 1. As a result, the performance of the diode phase shifter is readjusted to meet the required performance.

According to this embodiment, since the adjustment sheet is inserted only between the dielectric upper layer substrate 14 and the dielectric middle layer substrate 40, there is no need to remove the connecting wires of the PIN diode 11 during readjustment. Readjustment can be carried out by an extremely simple operation of just removing the metal case top cover 15 and removing the dielectric upper layer substrate 14.

In the above embodiment, the adjustment sheet 19 is inserted over the entire surface of the dielectric upper substrate 14, but the adjustment sheet 19 may be inserted only in a portion thereof. For example, for the purpose of matching only the impedance of the PIN diode 11, the thickness t of the coupler 6 may be left as it is; in such a case, the low impedance line 9 or the high impedance line 10 may be Insert the adjustment sheet 19 only for adjustment.

FIG. 3 is a sectional view showing such an embodiment.

In this case, since a gap is created in the portion of the coupler 60 where the adjustment sheet 19 is not inserted, the ground conductor 2 of the dielectric upper layer substrate 14
and inserting the metal foil 20 between the metal case top lid 150,
It is necessary to prevent voids from forming.

Furthermore, in the above embodiment, the adjustment sheet 19 is inserted only in the part excluding the coupler 6, but the adjustment sheet 19 may be inserted only in the part of the coupler 6. It is also possible to insert the adjustment sheet 19 into both. The procedures and methods for these can be determined in advance through experiments.

〔Effect of the invention〕

As described above, according to the present invention, since the adjustment sheet made of a dielectric film is inserted between the dielectric outer layer substrate and the conductor line on the dielectric inner substrate,
The impedance of the line conductor can be adjusted by the number of dielectric films, and variations in diode characteristics can be easily absorbed, resulting in a high yield of diode phase shifters that meet the required performance. There is.

[Brief explanation of drawings]

FIG. 1 is an exploded perspective view showing a diode phase shifter according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line A-A, and FIG. Figure 4 is an exploded perspective view of a conventional diode phase shifter, and Figure 5 is its A-
The A-line sectional view and FIG. 6 are circuit diagrams for explaining the operation. 1 is a dielectric outer layer substrate (dielectric lower layer substrate), 2 is a ground conductor,
3 is a metal case, 4 is a dielectric intermediate board, and 5 is a line conductor (
6 is the line conductor (coupler), 7 is the line conductor (DC block capacitor), 8 is the line conductor (reflected wave phase conversion circuit line), 9 is the line conductor (low impedance line), 10 is the line conductor Line conductor (high impedance line), 11
is a diode (PIN diode), 14 is a dielectric outer layer substrate (dielectric upper layer substrate), 15 is a metal case (metal case top cover), and 19 is an adjustment sheet. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. 1(

Claims (1)

[Claims] Two dielectric outer layer substrates, one side of which is a ground conductor,
A dielectric middle layer substrate disposed between the dielectric outer layer substrates and having line conductors formed on both sides, a diode connected to the line conductor, and housing the dielectric outer layer substrate, the dielectric middle layer substrate, and the diode. and a metal case for shielding the diode from the outside, and a diode phase shifter having bias means for applying a DC bias to the diode. A diode phase shifter characterized by disposing an adjustment sheet made of film.