JPH03257717A - Manufacture of transparent conductor - Google Patents
Manufacture of transparent conductorInfo
- Publication number
- JPH03257717A JPH03257717A JP5571990A JP5571990A JPH03257717A JP H03257717 A JPH03257717 A JP H03257717A JP 5571990 A JP5571990 A JP 5571990A JP 5571990 A JP5571990 A JP 5571990A JP H03257717 A JPH03257717 A JP H03257717A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparency
- oxygen
- transparent conductor
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims abstract description 45
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 15
- 238000007254 oxidation reaction Methods 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000001771 vacuum deposition Methods 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- -1 polypropylene Polymers 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は基材表面に金属酸化物からなる透明導電性薄膜
が形成された透明導電体の新規な製造法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a novel method for manufacturing a transparent conductor in which a transparent conductive thin film made of a metal oxide is formed on the surface of a base material.
（従来の技（ホｉ〕
ン夜晶デイスプレィ、エレクトロＪレミ矛′ンセンスデ
ィスプレイなどの各種デイスプレィにおける透明電極や
、透明物品の帯電防止、電磁波遮蔽などの用途に用いら
れる透明導電体としては、ガラスあるいはプラスチック
類の基材表面に、酸化インジウム、酸化スズ、酸化イン
ジウムと酸化スズの混合物（以下、ＩＴＯという）など
の金属酸化物からなる透明導電性薄膜を設けた透明導電
体が用いられている。(Conventional techniques) Transparent conductors are used as transparent electrodes in various displays such as night crystal displays and electromagnetic displays, as well as for antistatic purposes in transparent articles, electromagnetic shielding, etc. A transparent conductor is used in which a transparent conductive thin film made of a metal oxide such as indium oxide, tin oxide, or a mixture of indium oxide and tin oxide (hereinafter referred to as ITO) is provided on the surface of a glass or plastic substrate. There is.
このような透明導電体において、基材表面への透明導電
性薄膜の形成には、真空蒸着法あるいはスパックリング
法が採用されている。また、これら方法において、上記
薄膜の導電性、透明性向上のため、薄膜形成中に基材を
高温に保持するか、あるいは薄膜形成後に高温加熱処理
することが好ましいことも知られている。In such transparent conductors, a vacuum evaporation method or a spackling method is employed to form a transparent conductive thin film on the surface of a substrate. It is also known that in these methods, in order to improve the conductivity and transparency of the thin film, it is preferable to maintain the base material at a high temperature during the formation of the thin film, or to perform a high temperature heat treatment after forming the thin film.
ところが、プラスチック基材を用いた場合には、この基
材の軟化点ないし融点以上の温度での加熱は不可能であ
り、したがって導電性、透明性の向上効果が充分に得ら
れなかった。However, when a plastic base material is used, it is impossible to heat the base material at a temperature higher than its softening point or melting point, and therefore, sufficient effects of improving conductivity and transparency cannot be obtained.
また、金属酸化物薄膜の導電性、透明性は、薄膜の酸化
度に大きく影響され、一般に、酸化度が低いと導電性は
高く （低電気抵抗）、一方透明性は低くなる傾向を示
し、逆に酸化度が高いと導電性は低く、透明性は高くな
る傾向を示すことが知られている。In addition, the conductivity and transparency of metal oxide thin films are greatly influenced by the degree of oxidation of the thin film, and generally, the lower the degree of oxidation, the higher the conductivity (low electrical resistance), while the lower the transparency. Conversely, it is known that when the degree of oxidation is high, the conductivity tends to be low and the transparency tends to be high.
透明導電体の用途によっては、透明性は多少低くても導
電性の高いものが望まれたり、あるいは導電性は多少低
くても透明性の高いものが望まれたりすることがある。Depending on the use of the transparent conductor, one may desire something with somewhat low transparency but high conductivity, or one with somewhat low conductivity but high transparency.
このような要求に対応するため、上記したような酸化度
によって導電性と透明性が背反傾向を示す現象を利用し
、金属酸化物薄膜の形成時に、その酸化度を制御するこ
とにより、所望の導電性および透明性を有する透明導電
体を得ることが試みられた。In order to meet these demands, we can utilize the above-mentioned phenomenon in which conductivity and transparency tend to contradict each other depending on the degree of oxidation, and by controlling the degree of oxidation when forming a metal oxide thin film, we can achieve the desired level of oxidation. Attempts have been made to obtain transparent conductors that have electrical conductivity and transparency.
ところが、真空蒸着法やスパッタリング法により金属酸
化物薄膜を形成する際、この薄膜の酸化度の制御は反応
性ガスとしてチャンバー内に導入する酸素の量で行うこ
とになるが、薄膜の酸化度は酸素量の微量変動により大
きく変化し、またその他の蒸着条件の僅かな変動によっ
ても大きく変化するので、所定の酸化度を継続維持する
ことが困難であり、上記試みは実用に至っていない。However, when forming a metal oxide thin film by vacuum evaporation or sputtering, the degree of oxidation of the thin film is controlled by the amount of oxygen introduced into the chamber as a reactive gas; It is difficult to continuously maintain a predetermined degree of oxidation because it changes greatly due to small changes in the amount of oxygen and also due to small changes in other vapor deposition conditions, and the above-mentioned attempts have not been put to practical use.
このように、従来公知の透明導電体の製造法では、導電
性薄膜の形成に際して基材の加熱を必要とするため、プ
ラスチック基材などに対して導電性、透明性にすぐれた
上記薄膜を形成しにくく、また酸化度の制御による導電
性および透明性の調整が難しいという問題を有していた
。In this way, conventionally known transparent conductor manufacturing methods require heating of the base material when forming a conductive thin film, so it is necessary to form the above thin film with excellent conductivity and transparency on a plastic base material, etc. Furthermore, it is difficult to adjust conductivity and transparency by controlling the degree of oxidation.
したがって、本発明の目的の１つは高温加熱を必ずしも
必要とすることなく導電性および透明性のすくれた透明
導電体を提供することにあり、他の目的は金属酸化物薄
膜の酸化度の制御の容易な製造法を提供することにある
。Therefore, one object of the present invention is to provide a transparent conductor with low conductivity and transparency without necessarily requiring high-temperature heating, and another object is to reduce the degree of oxidation of a metal oxide thin film. The objective is to provide a manufacturing method that is easy to control.
本発明者らは、従来技術の有する上記問題を解決するた
め、種々検討の結果、特定状態の酸素を利用することに
より、所期の目的が達成されることを見い出し、本発明
を完成させるに至った。In order to solve the above-mentioned problems of the prior art, the present inventors have conducted various studies and found that the intended purpose can be achieved by using oxygen in a specific state, and have completed the present invention. It's arrived.
すなわち、本発明に係る透明導電体の製造法は、基材表
面に、真空蒸着法あるいはスパッタリング法により金属
酸化物を主体とする透明導電性薄膜を形成する透明導電
体の製造法であって、上記薄膜の形成中あるいは形成後
に、イオン化により加速された酸素を照射することを特
徴とするものである。That is, the method for producing a transparent conductor according to the present invention is a method for producing a transparent conductor in which a transparent conductive thin film mainly composed of a metal oxide is formed on the surface of a base material by a vacuum evaporation method or a sputtering method, This method is characterized in that oxygen accelerated by ionization is irradiated during or after the formation of the thin film.
本発明において用いる基材は、従来の透明導電体のそれ
と同しであってよく、透明なガラスあるいはプラスチッ
ク（ポリエステル、ポリアミド、ポリプロピレン、ポリ
カーボネート、ポリイミドなど）からなるフィルム、シ
ート、板などが広く用いられる。The substrate used in the present invention may be the same as that of conventional transparent conductors, and films, sheets, plates, etc. made of transparent glass or plastic (polyester, polyamide, polypropylene, polycarbonate, polyimide, etc.) are widely used. It will be done.
また、金属酸化物からなる透明導電性薄膜を形成するだ
めの原料も、透明導電体の製造に従来から用いられてい
るインジウム、スズ、パラジウム、金、銀、白金あるい
はこれらの混合物のような金属や、酸化インジウム、酸
化スズ、ＩＴＯのような金属酸化物を使用できる。In addition, the raw materials for forming transparent conductive thin films made of metal oxides are metals such as indium, tin, palladium, gold, silver, platinum, or mixtures thereof, which are conventionally used in the production of transparent conductors. Metal oxides such as indium oxide, tin oxide, and ITO can be used.
このような原料を用い、真空蒸着法やスパッタリング法
により基材表面に金属酸化物薄膜を形成する際には、装
置内に反応性ガスとして酸素を導入するが、本発明にお
いてはイオン化により加速された酸素を用いることが重
要である。When forming a metal oxide thin film on the surface of a substrate using such raw materials by vacuum evaporation or sputtering, oxygen is introduced into the apparatus as a reactive gas, but in the present invention oxygen is accelerated by ionization. It is important to use fresh oxygen.
このイオン化により加速された酸素は化学反応性に冨み
、これを基材表面に形成された金属薄膜または金属酸化
物薄膜に照射することにより、これら薄膜の酸化が促進
され、イオンの運動エネルギーによって薄膜の結晶性、
緻密性が向上し、その結果、導電性および透明性が改良
される。Oxygen accelerated by this ionization becomes chemically reactive, and by irradiating it onto a metal thin film or metal oxide thin film formed on the surface of the base material, the oxidation of these thin films is promoted, and the kinetic energy of the ions crystallinity of thin films,
Density is improved, resulting in improved conductivity and transparency.
つぎに、本発明を図面を参照しながら説明する。Next, the present invention will be explained with reference to the drawings.
第１図において、１は耐圧容器であり、バルブ２を有す
る排気管３が連結されている。この容器１内には蒸着源
４．５およびイオン照射装置６が配置され、さらにこの
照射装置６の対向位置にはガラスあるいはプラスチック
からなる基材７が保持具８によって保持されている。９
．１０は蒸着源４．５の支持台であり、１１および１２
は蒸着源４．５からの蒸着量を各々モニターするための
水晶振動式膜厚モニターである。In FIG. 1, reference numeral 1 denotes a pressure vessel to which an exhaust pipe 3 having a valve 2 is connected. A vapor deposition source 4 . 9
．． 10 is a support stand for the vapor deposition source 4.5, 11 and 12
is a crystal vibration type film thickness monitor for monitoring the amount of vapor deposition from the vapor deposition sources 4.5.
イオン照射装置６において、１３は酸素をイオン化する
イオン源で、酸素がバリアプルリークバルブ１４を通じ
て供給される。酸素はイオン＃１３内でイオン化され、
その時のイオンの電位と基材７との電位差によって加速
され、基材７に照射される。In the ion irradiation device 6, 13 is an ion source that ionizes oxygen, and oxygen is supplied through a barrier pull leak valve 14. Oxygen is ionized within ion #13,
The ions are accelerated by the potential difference between the ions at that time and the base material 7, and the base material 7 is irradiated with the ions.
本発明において使用するイオン源としては、特に限定さ
れないが、比較的大電流、大面積のイオンビームを照射
するのが好ましく、この点からプラズマイオン源と呼ば
れるものを用いるのが好ましい。このプラズマイオン源
とは、プラズマ発生室、プラズマ発生室からイオンを引
き出すための引き出し孔および引き出し電極などを備え
たものである。The ion source used in the present invention is not particularly limited, but it is preferable to irradiate an ion beam with a relatively large current and large area, and from this point of view it is preferable to use what is called a plasma ion source. This plasma ion source is equipped with a plasma generation chamber, an extraction hole for extracting ions from the plasma generation chamber, an extraction electrode, and the like.
このプラズマイオン源の動作は一般に以下のように説明
される。イオン化したい物質をガス状にしてプラズマ発
生室に導入し、直流、高周波あるいはマイクロ波放電、
電子ビーム入射などの手法でこのガスをイオン化する。The operation of this plasma ion source is generally explained as follows. The substance to be ionized is made into a gas and introduced into a plasma generation chamber, and then a direct current, high frequency or microwave discharge is applied.
This gas is ionized using methods such as electron beam injection.
生成したイオンは引き出し電極で作られる電場によって
、プラズマ発生室より引き出し孔を経て引き出されると
共に加速される。イオン照射密度は、プラズマ発生室で
のイオン化効率を変えることなどにより制御できるもの
である。The generated ions are extracted from the plasma generation chamber through the extraction hole and accelerated by an electric field created by the extraction electrode. The ion irradiation density can be controlled by changing the ionization efficiency in the plasma generation chamber.
基材に照射されるイオンの加速エネルギーつまりイオン
化された時のイオンの電位と基材の電位との差は、０．
１〜１００ＫｅＶの範囲が好ましく、０．５〜１０Ｋｅ
Ｖの範囲がさらに好ましい。The acceleration energy of the ions irradiated onto the base material, that is, the difference between the potential of the ions when ionized and the potential of the base material is 0.
The range of 1 to 100 KeV is preferable, and the range is 0.5 to 10 KeV.
A range of V is more preferred.
第１図に示す装置により、透明導電体を製造するには、
バルブ２を開いて排気管３から排気し、容器１内を所定
の真空度に保ち、真空蒸着法あるいはスパッタリング法
により、基材７の表面に蒸着源４および／または５から
原料を蒸発せしめ、金属あるいは金属酸化物の薄膜を形
成する。この薄膜形成時にイオン照射装置６によって加
速されたイオン状の酸素を照射する。この照射により、
金属薄膜は酸化されて導電性および透明性のすくれたも
のとなり、金属酸化物薄膜はより高度に酸化され、これ
もまた導電性および透明性のすぐれたものとなる。To manufacture a transparent conductor using the apparatus shown in FIG.
The valve 2 is opened to exhaust air from the exhaust pipe 3, the inside of the container 1 is maintained at a predetermined degree of vacuum, and the raw material is evaporated from the evaporation source 4 and/or 5 onto the surface of the base material 7 by a vacuum evaporation method or a sputtering method, Forming a thin film of metal or metal oxide. At the time of forming this thin film, accelerated ionic oxygen is irradiated by the ion irradiation device 6. With this irradiation,
Metal thin films are oxidized and become less conductive and transparent; metal oxide thin films are more highly oxidized and also become more conductive and transparent.
また、本発明においては、基材表面に金属薄膜あるいは
金属酸化物薄膜を真空蒸着法あるいはスパッタリング法
により形成したのち、この薄膜にイオン化により加速さ
れた酸素を照射しても上記と同様の結果が得られる。Furthermore, in the present invention, after forming a metal thin film or metal oxide thin film on the surface of the substrate by vacuum evaporation or sputtering, the same results as above can be obtained even if this thin film is irradiated with oxygen accelerated by ionization. can get.
さらに、本発明によれば、照射する酸素イオンのビーム
電流値を変化させることにより、薄膜の酸化度を制御で
きるから、得られる透明導電体の導電性、透明性を自在
に設定できる。Furthermore, according to the present invention, the degree of oxidation of the thin film can be controlled by changing the beam current value of the irradiated oxygen ions, so the conductivity and transparency of the resulting transparent conductor can be freely set.
以上のように、本発明においては、透明導電性薄膜の形
成中あるいは形成後にこの薄膜にイオン化により加速さ
れた酸素を照射するようにしたので、基材の加熱をあえ
て必要とすることなく、導電性および透明性の共にすぐ
れた透明導電体を容易に製造することができる。As described above, in the present invention, the thin film is irradiated with oxygen accelerated by ionization during or after the formation of the transparent conductive thin film. A transparent conductor with excellent properties and transparency can be easily produced.
つぎに、実施例により本発明をより具体的に説明する。 Next, the present invention will be explained in more detail with reference to Examples.
実施例１
第１図に示すのと同し装置を用い、一方の蒸着源として
インジウムを、他方の蒸着源としてスズを、基材として
ガラス板（厚さ１．０ ｍＷ ）を各々用意した。なお
、各蒸着源（エレクトロンビーム蒸着源）からガラス板
までの距離は、いずれも３０ＣＩｎに設定した。Example 1 Using the same apparatus as shown in FIG. 1, indium was prepared as one vapor deposition source, tin was prepared as the other vapor deposition source, and a glass plate (thickness 1.0 mW) was prepared as a substrate. Note that the distance from each evaporation source (electron beam evaporation source) to the glass plate was set to 30 CIn.
つぎに、耐圧容器内の圧力を４ Ｘ Ｉ ０５Ｔｏ ｒ
ｒに維持し、各蒸着源からインジウムとスズをガラス板
表面に蒸着させ薄膜を形成さ・ｕながら、この薄膜にイ
オン照射装置（プラズマイオン源）によりイオン化され
加速された酸素を照射し、厚さ１．０００人のＩＴＯ薄
膜を有する透明導電体を得た。蒸着中、基材は特に加熱
しなかった。Next, reduce the pressure inside the pressure vessel to 4
Indium and tin are evaporated onto the surface of the glass plate from each evaporation source to form a thin film while maintaining the temperature at 100 m.While the temperature is maintained at A transparent conductor having a 1,000-thick ITO thin film was obtained. The substrate was not particularly heated during the deposition.
このとき、水晶振動式膜厚モニターによりインジウムお
よびスズの蒸着量を０．５人／秒および０゜２人／秒に
調整した。なお、酸素イオン照射時のイオン電流密度お
よび加速電圧は５０μＡ ／ ｃｎｌおよびｌ０ＫＶと
した。At this time, the amount of indium and tin deposited was adjusted to 0.5 people/second and 0°2 people/second using a quartz crystal film thickness monitor. Note that the ion current density and acceleration voltage during oxygen ion irradiation were 50 μA/cnl and 10 KV.
このようにして得た透明導電体の比抵抗は５．２ｘ ｌ
Ｑ−３Ω■、光線透過率は８８％であり、導電性およ
び透明性にすくれていた。The specific resistance of the transparent conductor thus obtained was 5.2x l
Q-3Ω■, light transmittance was 88%, and the conductivity and transparency were excellent.
実施例２
酸化インジウム９５重量部と酸化スズ５重量部を混合し
で焼結したものを蒸着源とし、耐圧容器内の圧力をｌＸ
ｌ０−５Ｔｏｒｒに調整した。酸素照射を行わないこと
以外は、実施例１と同様にして、真空蒸着法によりガラ
ス板表面に厚さ１．０００人のＪＴＯ薄膜を形成した。Example 2 A sintered mixture of 95 parts by weight of indium oxide and 5 parts by weight of tin oxide was used as a vapor deposition source, and the pressure in the pressure vessel was adjusted to 1X.
It was adjusted to 10-5 Torr. A JTO thin film with a thickness of 1,000 thick was formed on the surface of a glass plate by vacuum evaporation in the same manner as in Example 1, except that oxygen irradiation was not performed.
つぎに、電流値１．０ ｍ Ａ、加速電圧１０ＫＶの条
件で、酸素イオン照射装置から酸素イオンを照射するこ
とにより、上記薄膜を酸化した。Next, the thin film was oxidized by irradiating oxygen ions from an oxygen ion irradiation device under conditions of a current value of 1.0 mA and an acceleration voltage of 10 KV.
このようにして得られた透明導電体の比抵抗は５．３Ｘ
１０−’Ω―、光線透過率は８９％であり、導電性およ
び透明性が共にすぐれていた。The specific resistance of the transparent conductor thus obtained is 5.3X
10-'Ω-, the light transmittance was 89%, and both the conductivity and transparency were excellent.
比較例１
第１図に示すのと同し装置を用い、実施例２と同様に酸
化インジウム９５重量部と酸化スズ５重量部を混合して
焼結したものを蒸着源とし、耐圧容器内の圧力をＩ Ｘ
１０−’Ｔｏ ｒ ｒに調整した。Comparative Example 1 Using the same apparatus as shown in Fig. 1 and using a sintered mixture of 95 parts by weight of indium oxide and 5 parts by weight of tin oxide as in Example 2 as a vapor deposition source, the mixture was heated in a pressure vessel. Pressure I
Adjusted to 10-'Torr.
その後、０２ガスを容器内の圧力が４ Ｘ １０−’Ｔ
ｏｒｒになるまで導入し、反応性蒸着法によりガラス表
面に厚さｉ、ｏｏｏ人のＩＴＯ薄膜を有する透明導電体
を得た。蒸着中、基材は特に加熱しなかった。Then, the pressure inside the container is 4 x 10-'T.
A transparent conductor having a thin ITO film with a thickness of i and ooo on the glass surface was obtained by a reactive vapor deposition method. The substrate was not particularly heated during the deposition.
上記方法により得られた透明導電体の比抵抗は１．３１
Ｘ１０−’Ωｃｆｆｌ、光線透過率は３５．２％と、導
電性および光線透過率が共に著しく低いものとなった。The specific resistance of the transparent conductor obtained by the above method is 1.31
X10-'Ωcffl, the light transmittance was 35.2%, and both the conductivity and the light transmittance were extremely low.
第１図は本発明の実施に用いる真空蒸着装置の実例を示
す概略図である。FIG. 1 is a schematic diagram showing an example of a vacuum evaporation apparatus used for carrying out the present invention.
Claims (2)
法により金属酸化物を主体とする透明導電性薄膜を形成
する透明導電体の製造法であつて、上記薄膜の形成中あ
るいは形成後に、イオン化により加速された酸素を照射
することを特徴とする透明導電体の製造法。(1) A method for manufacturing a transparent conductor, in which a transparent conductive thin film mainly composed of metal oxide is formed on the surface of a substrate by vacuum evaporation or sputtering, in which ionization is performed during or after the formation of the thin film. A method for producing a transparent conductor, which is characterized by irradiating accelerated oxygen.
酸化スズの混合物からなる透明導電性薄膜を形成する透
明導電体の製造法であつて、上記薄膜の形成中に、イオ
ン化により加速された酸素を照射することを特徴とする
透明導電体の製造法。(2) Indium oxide-
A method for producing a transparent conductor forming a transparent conductive thin film made of a tin oxide mixture, the method comprising irradiating oxygen accelerated by ionization during the formation of the thin film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5571990A JPH03257717A (en) | 1990-03-07 | 1990-03-07 | Manufacture of transparent conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5571990A JPH03257717A (en) | 1990-03-07 | 1990-03-07 | Manufacture of transparent conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03257717A true JPH03257717A (en) | 1991-11-18 |
Family
ID=13006681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5571990A Pending JPH03257717A (en) | 1990-03-07 | 1990-03-07 | Manufacture of transparent conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03257717A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139843A (en) * | 1992-10-21 | 1994-05-20 | Sharp Corp | Formation of transparent conducting film |
-
1990
- 1990-03-07 JP JP5571990A patent/JPH03257717A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139843A (en) * | 1992-10-21 | 1994-05-20 | Sharp Corp | Formation of transparent conducting film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100336621B1 (en) | Method of depositing an io or ito thin film on polymer substrate | |
| JPH03257717A (en) | Manufacture of transparent conductor | |
| JP2002047559A (en) | Ito film, and film deposition method thereof | |
| JPH04198469A (en) | Manufacture of laminated body | |
| JPH11195333A (en) | Manufacture of transparent conductive film and this transparent conductive film | |
| JPS6350463A (en) | Method and apparatus for ion plating | |
| JPH0273963A (en) | Formation of thin film on low-temperature substrate | |
| JPH04206212A (en) | Manufacture of laminated body | |
| JPS61292817A (en) | Formation of transparent conducting metal oxide film | |
| JPS6224505A (en) | Formation of light transmitting conductive film | |
| JP2624778B2 (en) | High-speed production method of ITO transparent conductive film | |
| JPH04141909A (en) | Transparent conductive film and its manufacturing method | |
| JP2003027231A (en) | High-density sputtering utilizing front end of sheet plasma | |
| KR100377376B1 (en) | Ion Beam Assisted Evaporator and evaporating process thereof | |
| JPH02228469A (en) | Ion plating method | |
| JPH03176913A (en) | Manufacture of thin transparent conductive semiconductor film | |
| JP3718866B2 (en) | Method and apparatus for producing metal oxide film | |
| JPS5825090B2 (en) | Toumaid Udensei Himakuoyuusuru Koubunshiseikeibutsunoseizohouhou | |
| JPH0317912A (en) | Manufacture of transparent conductive thin film | |
| JPH03146657A (en) | Formation of transparent conductive film by using activated particle and device for forming transparent conductive film | |
| JPH02239518A (en) | Manufacture of transparent conductive laminated body | |
| JPH01283711A (en) | Formation of transparent conductive pattern and device thereof | |
| JPH07211162A (en) | Manufacture of transparent conductive film | |
| JPH02213463A (en) | Production of transparent electrically conductive film | |
| KR20110076110A (en) | Method for producing transparent conductive film |