JPH03176913A - Manufacture of thin transparent conductive semiconductor film - Google Patents
Manufacture of thin transparent conductive semiconductor filmInfo
- Publication number
- JPH03176913A JPH03176913A JP31494789A JP31494789A JPH03176913A JP H03176913 A JPH03176913 A JP H03176913A JP 31494789 A JP31494789 A JP 31494789A JP 31494789 A JP31494789 A JP 31494789A JP H03176913 A JPH03176913 A JP H03176913A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- target
- conductive semiconductor
- semiconductor film
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ＩＴ○薄膜などの透明導電性半導体薄膜をス
パッタリング法により形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming a transparent conductive semiconductor thin film such as an IT○ thin film by a sputtering method.
災末例挟権
透明導電膜は、マトリックス型の液晶表示素子やタッチ
、センサーなど広範な用途に使用されている。Transparent conductive films are used in a wide range of applications, including matrix-type liquid crystal display elements, touch panels, and sensors.
透明導電膜としては、金などの金属薄膜と、ＩＴＯに代
表される半導体薄膜があるが、透明性、導電性、ガラス
との密着性、耐候性、ニス１−等の１〜−タル的な性能
から、主として後者が用いられている。Transparent conductive films include metal thin films such as gold and semiconductor thin films typified by ITO. The latter is mainly used due to its performance.
透明導電膜としての半導体薄膜は、真空蒸着法、スパッ
タリング法などの方法で形成されているが、膜特性の点
でスパッタリング法が優れており、特に、プラスチック
製基板が用いられることから、低温条件下に高導電度の
透明導電膜を形成する方法の開発が望まれている。Semiconductor thin films as transparent conductive films are formed by methods such as vacuum evaporation and sputtering, but the sputtering method is superior in terms of film properties, and is especially suitable for low-temperature conditions because it uses a plastic substrate. It is desired to develop a method for forming a highly conductive transparent conductive film underneath.
透明導電膜の高導電度化が実現されれば、低電圧駆動が
可能となり、また、同じ電圧駆動をするのであれば、そ
れだけ導電膜の形成膜厚を薄くすることができ、透明化
あるいは成膜コストの低減が可能となる。If a transparent conductive film can be made highly conductive, it will be possible to drive it at a lower voltage, and if the same voltage drive is used, the thickness of the conductive film can be made that much thinner, making it transparent or forming a transparent conductive film. It is possible to reduce membrane costs.
しかしながら、従来のスパッタリング法によるＩＴＯ透
明導電膜の形成においては、その成膜温度、成膜後のア
ニーリング処理の有無あるいは温度、さらには膜厚等に
もよるが、導電度が未だ十分なものではなく、よりいっ
そうの改善が待たれていた。However, when forming an ITO transparent conductive film using the conventional sputtering method, the conductivity is still not sufficient, although it depends on the film formation temperature, the presence or absence of an annealing treatment after film formation, the temperature, and the film thickness. However, further improvements were awaited.
明が しようとする課題
本発明は、透明導電性半導体薄膜の導電性を向上するこ
とを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to improve the conductivity of a transparent conductive semiconductor thin film.
発明の構成
本発明の透明導電性半導体薄膜の製造方法は、スパッタ
リング法により透明導電性薄膜を製造するに際し、ター
ゲットの表面磁場を５００ガウス以上とすることを特徴
とする。Structure of the Invention The method for manufacturing a transparent conductive semiconductor thin film of the present invention is characterized in that the surface magnetic field of the target is set to 500 Gauss or more when manufacturing the transparent conductive thin film by sputtering.
以下、本発明について添付図面に沿ってさらに詳細に説
明する。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第１図は本発明を実施するための装置および方法の一例
を示すための説明図であり、典型的な高速マグネトロン
スパッタリング装置を示している。FIG. 1 is an explanatory diagram showing an example of an apparatus and method for carrying out the present invention, and shows a typical high-speed magnetron sputtering apparatus.
真空槽１１には、スパッタ電極２１が配設されており、
この上にターゲット２５が載置されている。A sputter electrode 21 is arranged in the vacuum chamber 11,
A target 25 is placed on top of this.
また、ターゲット２５と対向して、薄膜を形成すべき基
板３１が配置されている。一方、ターゲット２５の裏面
には磁石装置２３が配設されている。Further, a substrate 31 on which a thin film is to be formed is arranged facing the target 25. On the other hand, a magnet device 23 is arranged on the back surface of the target 25.
磁石装置２３は、Ｓ極をターゲット２５に向けるＳ磁石
と、このＳ磁石を離間して同心温状に囲繞しＮ極をター
ゲット２５面に向けるＮ磁石とから構成されている。Ｎ
極からの磁力線２７は、ターゲット２５面を通過したの
ち再びターゲラ１へ２５面を経てＳ極に入り、磁力線２
７とターゲット２５とにより閉ループが形成される。The magnet device 23 is composed of an S magnet with its S pole directed toward the target 25, and an N magnet that surrounds the S magnet in a concentrically spaced manner and directs its north pole toward the surface of the target 25. N
The magnetic field line 27 from the pole passes through the target 25 surface, then enters the target layer 1 again through the 25 surface, enters the S pole, and becomes the magnetic field line 2.
7 and the target 25 form a closed loop.
スパッタリングに際しては、真空槽１１内に基板３１を
セットしたのち、排気系１３により真空槽１１内を高真
空に排気し、ガスボンベ１５からアルゴンガスあるいは
アルゴンと酸素の混合ガスをバリアプルバルブ１７を介
して真空槽】１内に導入してスパッタリング条件を設定
する。また、必要に応して基板３１をヒータ（図示せず
）等により加熱する。During sputtering, after setting the substrate 31 in the vacuum chamber 11, the vacuum chamber 11 is evacuated to a high vacuum by the exhaust system 13, and argon gas or a mixed gas of argon and oxygen is supplied from the gas cylinder 15 through the barrier pull valve 17. 1 and set the sputtering conditions. Further, the substrate 31 is heated by a heater (not shown) or the like, if necessary.
スパッタリング条件を設定したのち、スパッタ電源１９
によりスパッタ電極２１に電圧を印加する。このとき、
電場の方向と、磁石装置２３による磁場の方向とが直交
し、マグネトロン型放電により、電子が前述の閉ループ
内に閉じ込められて運動し、ターゲット２５をたたいて
スパッタし、基板３１上に薄膜が形成される。After setting the sputtering conditions, turn on the sputtering power supply 19.
A voltage is applied to the sputter electrode 21 by. At this time,
The direction of the electric field and the direction of the magnetic field from the magnet device 23 are perpendicular to each other, and due to the magnetron discharge, the electrons are confined in the aforementioned closed loop and move, hitting the target 25 and sputtering, forming a thin film on the substrate 31. It is formed.
このように、従来からマクネトロンスパッタリングにお
いて、ターゲット２５に対して磁場が印加されていたが
、その目的は電子の封し込めにあった。そこで、その目
的にかなう磁場強度が採用さ九ており、一般にターゲッ
トの表面磁場は３００〜３５０ガウス程度であった。As described above, a magnetic field has conventionally been applied to the target 25 in Macnetron sputtering, but its purpose has been to confine electrons. Therefore, a magnetic field strength suitable for the purpose was adopted, and the surface magnetic field of the target was generally about 300 to 350 Gauss.
本発明者らは、ＩＴＯなどの透明導電性半導体薄膜の電
導性を改善すべく鋭意検討した結果、磁場強度を積極的
に大きくすることにより、この目的が達成されることを
見い出した。すなわち本発明では、透明導電性半導体薄
膜をスパッタリングするに際し、ターゲットの表面磁場
を５００ガウス以上、好ましくは８００ガウス以上、さ
らに好ましくは１０００ガウス以上とすることにより、
得られる薄膜の導電性を改善したものである。表面磁場
の強さは、使用する磁石の選定や、磁石−ターゲット間
の距離の調整により行なうことができる。The inventors of the present invention have conducted extensive studies to improve the conductivity of transparent conductive semiconductor thin films such as ITO, and have found that this objective can be achieved by actively increasing the magnetic field strength. That is, in the present invention, when sputtering a transparent conductive semiconductor thin film, by setting the surface magnetic field of the target to 500 Gauss or more, preferably 800 Gauss or more, and more preferably 1000 Gauss or more,
This improves the conductivity of the resulting thin film. The strength of the surface magnetic field can be controlled by selecting the magnet to be used and adjusting the distance between the magnet and the target.
また、本発明が適用される半導体薄膜とじて−
は、酸化インジウム、酸化スズ、酸化亜鉛、スズ酸カド
ミニウム（ＣＴ Ｏ： Ｃａｄｏｍｉｕｍ Ｔｉｎ０ｘ
ｉｄｅ）等の酸化物に、１〜３種の元素をドープしたも
のなどがあり、代表的にはＩＴＯ（Ｉｎｄｌｕｍ Ｔｉ
ｎ ０ｘｉｄｅ ：スズをドープした酸化インジウム）
である。この場合、ＩＴＯ等の酸化物ターゲットを用い
てもよいし、金属（Ｉｎ−８ｎ等）を用い、酸素ガスを
真空槽内に導入して反応性スパッタリングを行ない、透
明導電性薄膜を形成してもよい。The semiconductor thin film to which the present invention is applied includes indium oxide, tin oxide, zinc oxide, and cadmium stannate (CTO: Cadmium Tin0x).
There are oxides such as ITO (Indlum Ti) doped with one to three elements.
n 0xide: indium oxide doped with tin)
It is. In this case, an oxide target such as ITO may be used, or a metal (In-8n, etc.) may be used and reactive sputtering may be performed by introducing oxygen gas into a vacuum chamber to form a transparent conductive thin film. Good too.
発明の効果
本発明によれば、ターゲットの表面磁場を５００ガウス
以上としてスパッタリングを行なうことにより、得られ
る透明導電性半導体薄膜の電導塵を向上させることがで
きる。Effects of the Invention According to the present invention, by performing sputtering with a target surface magnetic field of 500 Gauss or more, it is possible to improve conductive dust in the obtained transparent conductive semiconductor thin film.
実施例
第１図に示した装置において、磁石装置２３を上下に移
動可能とし、ターゲット２５との距離を調整可能とした
。Embodiment In the apparatus shown in FIG. 1, the magnet device 23 was made vertically movable, and the distance to the target 25 was adjustable.
ターゲット２５としてＩＴＯを、また、基板３１５−
６
としてガラス板をセットし、ターゲット２５と基板３１
との距離を９０ｍｍに設定した。ITO is set as the target 25 and a glass plate is set as the substrate 315-6, and the target 25 and the substrate 31
The distance was set to 90 mm.
ついで、真空槽１１内を排気系１３により］ Ｘ ＩＦ
５ｒｏｒｒまて排気した後、酸素を１．３％含むアルゴ
ンガスをバリアプルバルブ１７から真空槽１１内に供給
し、スパッタ圧力２ Ｘ １０−”Ｔｏｒｒ、スパッタ
電力１．５ｋｔ＋、基板温度２００°Ｃの条件でスパッ
タし、膜厚２０００人のＩＴＯ薄膜を形成した。Then, the inside of the vacuum chamber 11 is exhausted by the exhaust system 13]
After evacuating for 500 m, argon gas containing 1.3% oxygen was supplied into the vacuum chamber 11 from the barrier pull valve 17, sputtering pressure was 2 x 10-'' Torr, sputtering power was 1.5 kt+, and substrate temperature was 200°C. Sputtering was performed under the following conditions to form an ITO thin film with a thickness of 2000 nm.
このとき、ターゲット２５と磁石装置２３との距離を調
整して、ターゲット２５の表面磁場の強さを種々変更し
てスパッタし、その結果を第２図に示した。At this time, the distance between the target 25 and the magnet device 23 was adjusted, and the strength of the surface magnetic field of the target 25 was variously changed for sputtering, and the results are shown in FIG.
第２図より、ターゲット表面磁場が３００ガウスて比抵
抗５Ｘ１０−Ω・ｃｍ前後のものが得られるのに対し、
５００ガウスで３．３ Ｘ １０−’Ω・ｃｍまで低下
し、さらに８００ガウスで３ Ｘ １０−’Ω・ｃｍま
で、１２００ガウスで２．６ Ｘ １０−’Ω・ｃｍま
で低下することが判る。From Figure 2, a target surface magnetic field of 300 Gauss yields a resistivity of around 5 x 10-Ωcm, whereas
It can be seen that it decreases to 3.3 X 10-' Ω・cm at 500 Gauss, further decreases to 3 X 10-' Ω・cm at 800 Gauss, and 2.6 X 10-' Ω・cm at 1200 Gauss. .
第１図は本発明の方法を実施するための装置を示す説明
図である。
第２図は、ターゲット表面磁場と得られるＩＴＯ薄膜の
比抵抗の関係を示すグラフである。
１１ 真空槽
２３・磁石装置
３１・・・基板
２トスバッタ電極
２５・・・ターゲット
−FIG. 1 is an explanatory diagram showing an apparatus for carrying out the method of the present invention. FIG. 2 is a graph showing the relationship between the target surface magnetic field and the specific resistance of the obtained ITO thin film. 11 Vacuum chamber 23・Magnet device 31...Substrate 2 Toss batter electrode 25...Target-
Claims (1)
製造するに際し、ターゲットの表面磁場を５００ガウス
以上とすることを特徴とする透明導電性半導体薄膜の製
造方法。1. 1. A method for manufacturing a transparent conductive semiconductor thin film, which comprises using a target surface magnetic field of 500 Gauss or more when manufacturing the transparent conductive semiconductor thin film by a sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31494789A JPH03176913A (en) | 1989-12-04 | 1989-12-04 | Manufacture of thin transparent conductive semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31494789A JPH03176913A (en) | 1989-12-04 | 1989-12-04 | Manufacture of thin transparent conductive semiconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03176913A true JPH03176913A (en) | 1991-07-31 |
Family
ID=18059575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31494789A Pending JPH03176913A (en) | 1989-12-04 | 1989-12-04 | Manufacture of thin transparent conductive semiconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03176913A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015097588A1 (en) * | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor |
-
1989
- 1989-12-04 JP JP31494789A patent/JPH03176913A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015097588A1 (en) * | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor |
| JP2015143396A (en) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | Manufacturing method of oxide semiconductor |
| US10388520B2 (en) | 2013-12-27 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor |
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