JPH03257091A - Crystal growing device - Google Patents

Crystal growing device

Info

Publication number
JPH03257091A
JPH03257091A JP5705490A JP5705490A JPH03257091A JP H03257091 A JPH03257091 A JP H03257091A JP 5705490 A JP5705490 A JP 5705490A JP 5705490 A JP5705490 A JP 5705490A JP H03257091 A JPH03257091 A JP H03257091A
Authority
JP
Japan
Prior art keywords
moving mechanism
crystal growth
crystal
floating zone
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5705490A
Other languages
Japanese (ja)
Inventor
Takao Yokota
孝夫 横田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP5705490A priority Critical patent/JPH03257091A/en
Publication of JPH03257091A publication Critical patent/JPH03257091A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the mistaking of a moving quantity and to obtain a good crystal by having a time limit control section of a moving mechanism which operates the moving mechanism for a prescribed period of time at a prescribed speed. CONSTITUTION:An operator operates the time limit control section 119 and operates a power source 118 in order to operate the moving mechanism 1 or moving mechanism 2 in such a manner that a floating zone 108 attains an optimum shape by viewing the video of a floating zone 108 projected on a monitor TV 112. The operation is made for the prescribed period of time in this way and the mistaking of the moving quantity by an operation error is obviated. The good quality crystal is thus obtd.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は結晶成長等に利用される結晶成長装置に間し、
特にフローティングゾーン法による結晶成長装置に関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a crystal growth apparatus used for crystal growth, etc.
In particular, it relates to a crystal growth apparatus using the floating zone method.

〔従来の技術〕[Conventional technology]

従来の結晶成長装置は、回転楕円面から成る反射鏡の第
1の焦点部分に熱源を置き、第2の焦点部分に結晶素材
を置いてその赤外線を集中し、結晶素材を加熱溶融して
結晶成長を行なうものである。この装置には、反射鏡が
1個の回転楕円面のみで構成される単楕円型、反射鏡が
2個の回転楕円面の組合せで構成され第2の焦点を共有
する構造の双楕円型、更に反射鏡が3個以上の回転楕円
面の組合わせで構成され第2の焦点を共有する構造の多
積円型がある。
Conventional crystal growth equipment places a heat source at the first focal point of a reflecting mirror made of a spheroidal surface, places a crystal material at the second focal point, concentrates the infrared rays, and heats and melts the crystal material to form a crystal. It is about growth. This device includes a single ellipsoid type in which the reflecting mirror is composed of only one spheroidal surface, a bielliptic type in which the reflecting mirror is composed of a combination of two spheroidal surfaces and shares a second focal point, Furthermore, there is a multi-circular type in which the reflecting mirror is composed of a combination of three or more spheroidal surfaces and shares a second focal point.

次に従来の結晶成長装置について図面を参照して詳細に
説明する。第2図は、結晶成長装置の従来例のうち、単
楕円型の結晶成長装置を示す断面図で、200が回転楕
円反射鏡、201が多結晶素材、202が単結晶素材で
ある。これらの結晶素材はそれぞれ、チャック(上)2
03、チャ・ンク(下)204によってシャフト(上)
205、シャフト(下)206に取り付けられ、キセノ
ンランプ又はハロゲンランプ等の熱源207にエネルギ
を供給し、熱源207から赤外線を発生させると、多結
晶素材201及び単結晶素材202との間即ち結晶成長
装置の第2の焦点部分にフローティングゾーン208が
形成される。209は、多結晶素材201及び単結晶素
材202から発生するガスから回転楕円反射鏡を保護し
、且つ多結晶素材201及び単結晶素材202の周りを
真空にしたり不活性ガス等で満たすための炉芯管である
。210は、フローティングゾーン208を観察するた
め結晶成長装置の一部に開けた観察窓であり、フローテ
ィングゾーン208から発する光は、観察窓210を通
りカメラ211で捕らえ、モニタTV212に映すこと
によりフローティングゾーン208の映像を見ることが
できる。結晶成長は、移動機構(1)213によりフロ
ーテングゾーン208が多結晶素材201の方向に移動
、即ち回転楕円反射鏡200を多結晶素材201の方向
に移動することによって行なわれる。回転機構(上)2
14及び回転機構(下)215は、フローティングゾー
ン208を回転させ、フローティングゾーン208の円
周方向の温度分布を均一にしたりフローティングゾーン
208内部の攪拌を行なうための回転機構、移動機構(
2) 216はフローティングゾーン208の大きさを
調整するための移動機構、217は移動機構(1)21
B、回転機構(上)214、回転機構(下)215、移
動機構(2>216の制御部である。218は熱源20
7にエネルギを供給する電源である。結晶成長を行なう
場合、作業者はモニタTV212に映し出されたフロー
ティングゾーン208の映像を見て、フローティングゾ
ーン208が最適な形状になるように、移動機構(1)
や移動機構(2〉を動作させるため制御部217を操作
したり電源218を操作する。
Next, a conventional crystal growth apparatus will be described in detail with reference to the drawings. FIG. 2 is a sectional view showing a single elliptical crystal growth apparatus among conventional crystal growth apparatuses, in which 200 is a spheroidal reflector, 201 is a polycrystalline material, and 202 is a single crystalline material. Each of these crystal materials is chuck (top) 2
03, Shaft (top) by 204 (bottom)
205, attached to the shaft (lower) 206, supplies energy to a heat source 207 such as a xenon lamp or a halogen lamp, and when the heat source 207 generates infrared rays, crystal growth occurs between the polycrystalline material 201 and the single crystal material 202. A floating zone 208 is formed in the second focal portion of the device. 209 is a furnace for protecting the spheroidal reflector from gas generated from the polycrystalline material 201 and the single-crystalline material 202, and for creating a vacuum around the polycrystalline material 201 and the single-crystalline material 202 or filling it with inert gas or the like. It is a core tube. Reference numeral 210 is an observation window opened in a part of the crystal growth apparatus to observe the floating zone 208. Light emitted from the floating zone 208 passes through the observation window 210, is captured by a camera 211, and is reflected on a monitor TV 212. 208 images can be viewed. Crystal growth is performed by moving the floating zone 208 in the direction of the polycrystalline material 201 by the moving mechanism (1) 213, that is, by moving the spheroidal reflecting mirror 200 in the direction of the polycrystalline material 201. Rotating mechanism (top) 2
14 and rotation mechanism (lower) 215 are rotation mechanisms and moving mechanisms (
2) 216 is a moving mechanism for adjusting the size of the floating zone 208, 217 is a moving mechanism (1) 21
B. Rotation mechanism (top) 214, rotation mechanism (bottom) 215, movement mechanism (2>216 control unit. 218 is the heat source 20
This is a power source that supplies energy to 7. When performing crystal growth, the operator watches the image of the floating zone 208 displayed on the monitor TV 212 and moves the moving mechanism (1) so that the floating zone 208 has an optimal shape.
The controller 217 is operated and the power source 218 is operated in order to operate the moving mechanism (2).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来作業者がモニタTVを見てフローテ
ィングゾーンを最適な形状になるように、移゛動機楕(
1)213や移動機構(2) 216を動作させるため
制御部217を操作する際、予め移動機構(1) 21
3や移動機構(2) 216を移動させたい量がはっき
りしている場合が多いにもかかわらず、制御部217の
操作はスイッチによりオンオフで行なっていた。この場
合作業者の意図するように動作できれば問題無いが、操
作ミスのために移動量を間違えることがあった。そのた
め良質な結晶が得られなかった。
However, in the past, workers had to use a moving machine ellipse (
1) When operating the control unit 217 to operate the movement mechanisms (1) 216 and the movement mechanisms (1) 213,
3 or the moving mechanism (2) 216 is often clear, the control section 217 is operated by turning it on and off using a switch. In this case, there would be no problem if the operation could be performed as intended by the operator, but there were cases where the operator made a mistake in the amount of movement due to an operational error. Therefore, good quality crystals could not be obtained.

本発明の目的は、このような従来の欠点を除去し、良質
な単結晶を成長するための結晶成長装置を提供すること
にある。
An object of the present invention is to eliminate such conventional drawbacks and provide a crystal growth apparatus for growing high-quality single crystals.

〔課題を解決するための手段〕[Means to solve the problem]

第1の発明の結晶成長装置は、移動機構により移動可能
な回転楕円反射鏡の第1の焦点部分に熱源を設け、前記
回転楕円反射鏡の第2の焦点部分に回転機構により回転
可能なシャフトの先端に取り付けられた結晶素材を設け
、前記熱源から発する赤外線を集中して前記結晶素材を
溶融させ結晶を成長させるフローティングゾーン法によ
る結晶成長装置において、前記移動機構を所定の時間、
所定の速度で動作させる移動機構の時限制御部を有する
というものである。
In the crystal growth apparatus of the first invention, a heat source is provided at a first focal point of a spheroidal reflector movable by a moving mechanism, and a shaft rotatable by a rotation mechanism is provided at a second focal point of the spheroidal reflector. In a crystal growth apparatus using a floating zone method, a crystal material attached to the tip of a crystal material is provided, and infrared rays emitted from the heat source are concentrated to melt the crystal material and grow the crystal.
It has a time control section for the moving mechanism that operates at a predetermined speed.

第2の発明の結晶成長装置は、回転機構に所定の時間、
所定の速度で動作させる回転機構の時限制御部を有して
いる。
The crystal growth apparatus of the second invention has a rotating mechanism for a predetermined period of time,
It has a time control section for the rotation mechanism that operates at a predetermined speed.

〔実施例〕〔Example〕

本発明の一実施例を図面を参照して説明する。 An embodiment of the present invention will be described with reference to the drawings.

第1図は本発明による結晶成長装置の一実施例を示す断
面図である0図において、100が回転楕円反射鏡、1
01が多結晶素材、102が単結晶素材である。これら
の結晶素材はそれぞれ、チャック(上)103、チャッ
ク(下)104によってシャフト(上)105、シャフ
ト(下)106に取り付けられ、キセノンランプ又はハ
ロゲンランプ等の熱源107にエネルギを供給し、熱源
107から赤外線を発生させると、多結晶素材101及
び単結晶素材102との間即ち結晶成長装置の第2の焦
点部分にフローティングゾーン108が形成される。1
09は、多結晶素材101及び単結晶素材102から発
生するガスから回転楕円反射鏡を保護し、且つ多結晶素
材101及び単結晶素材102の周りを真空にしたり不
活性ガス等で満たすための炉芯管である。110は、フ
ローティングゾーン108を観察するための結晶成長装
置の一部に開けた観察窓であり、フローティングゾーン
108から発する光は、観察窓110を通りカメラ11
1で捕られ、モニタTV112に映すことによりフロー
ティングゾーン108の映像を見ることができる。結晶
成長は、移動機構(1)113によりフローテングゾー
ン108が多結晶素材101の方向に移動、即ち回転楕
円反射鏡100を多結晶素材101の方向に移動するこ
とによって行なわれる0回転機構(上)114及び回転
機構(下)115は、フローティングゾーン108を回
転させ、フローティングゾーン108の円周方向の温度
分布を均一にしたりフローティングゾーン108内部の
攪拌を行なうための回転機構、移動機構(2)116は
フローティングゾーン108の大きさを調整するための
移動機構、117は移動機構(1)11B、回転機構(
上)114、回転機構(下)115、移動機構(2) 
116の制御部である。118は熱源107にエネルギ
を供給する電源である。119は、制御部117に接続
された移動機構(1)及び移動機構(2)を所定の時間
だけ動作させる時限制御部である。結晶成長を行なう場
合、作業者はモニタTV112に映し出されたフローテ
ィングゾーン108の映像を見て、フローティングゾー
ン108が最適な形状になるように、移動機構(1)や
移動機構(2)を所定の時間だけ動作させるため、時限
制御部119を操作したり電源118を操作する。
FIG. 1 is a sectional view showing an embodiment of a crystal growth apparatus according to the present invention. In FIG.
01 is a polycrystalline material, and 102 is a single-crystalline material. These crystal materials are attached to a shaft (top) 105 and a shaft (bottom) 106 by a chuck (top) 103 and a chuck (bottom) 104, respectively, and supply energy to a heat source 107 such as a xenon lamp or a halogen lamp. When infrared radiation is generated from 107, a floating zone 108 is formed between the polycrystalline material 101 and the single crystal material 102, that is, at the second focal point of the crystal growth apparatus. 1
09 is a furnace for protecting the spheroidal reflector from gas generated from the polycrystalline material 101 and the single-crystalline material 102, and for creating a vacuum around the polycrystalline material 101 and the single-crystalline material 102 or filling it with inert gas or the like. It is a core tube. 110 is an observation window opened in a part of the crystal growth apparatus for observing the floating zone 108, and the light emitted from the floating zone 108 passes through the observation window 110 and reaches the camera 11.
1 and displayed on the monitor TV 112, the image of the floating zone 108 can be viewed. Crystal growth is performed by moving the floating zone 108 in the direction of the polycrystalline material 101 by the moving mechanism (1) 113, that is, by moving the spheroidal reflector 100 in the direction of the polycrystalline material 101. ) 114 and rotation mechanism (bottom) 115 are rotation mechanisms and movement mechanisms (2) for rotating the floating zone 108 to make the temperature distribution in the circumferential direction of the floating zone 108 uniform and for stirring the inside of the floating zone 108. 116 is a moving mechanism for adjusting the size of the floating zone 108, 117 is a moving mechanism (1) 11B, and a rotating mechanism (
Top) 114, rotation mechanism (bottom) 115, movement mechanism (2)
116 control unit. 118 is a power source that supplies energy to the heat source 107; Reference numeral 119 denotes a time control unit that operates the moving mechanism (1) and moving mechanism (2) connected to the control unit 117 for a predetermined time. When performing crystal growth, the operator watches the image of the floating zone 108 displayed on the monitor TV 112 and moves the moving mechanism (1) and moving mechanism (2) in a predetermined manner so that the floating zone 108 has an optimal shape. In order to operate for a certain amount of time, the time control section 119 is operated and the power supply 118 is operated.

なお、ここでは移動機構に時限制御部を有した結晶成長
装置について説明してきたが、回転機構に時限制御部を
有した結晶成長装置についても本発明は同様に実施でき
、移動機構及び回転機構に時限制御部を有した結晶成長
装置についても本発明は同様に実施できる。
Although a crystal growth apparatus having a time control section in the moving mechanism has been described here, the present invention can be implemented in the same way in a crystal growth apparatus having a time control section in the rotating mechanism, and The present invention can be similarly implemented with respect to a crystal growth apparatus having a time control section.

また、ここでは回転楕円反射鏡を移動させて結晶成長を
行なう型の結晶成長装置について説明してきたが、結晶
素材を取り付けているシャフトを移動させて結晶成長を
行なう形式の結晶成長装置についても本発明は同様に実
施できる。さらに、ここでは単槽円型の結晶成長装置に
ついて説明してきたが、双楕円型あるいは多槽円型の結
晶成長装置についても本発明は同様に実施できる。
In addition, although this article has explained a type of crystal growth apparatus that grows crystals by moving a spheroidal reflector, this book also describes a type of crystal growth apparatus that grows crystals by moving a shaft to which a crystal material is attached. The invention can be practiced similarly. Furthermore, although a single-vessel circular crystal growth apparatus has been described here, the present invention can be implemented in the same manner with a bielliptical or multi-vessel circular crystal growth apparatus.

以上の説明で述べた熱源としては、キセノンランプ、ハ
ロゲンランプ等の任意の熱源について本発明は同様に実
施できる。
As the heat source described in the above explanation, the present invention can be implemented in the same manner using any heat source such as a xenon lamp or a halogen lamp.

〔発明の効果〕 本発明による結晶成長装置は、移動機構に所定の時間だ
け動作させる時限制御部を有しており、作業者の意図す
るように所定の時間だけで動作できるため、操作ミスの
ために移動量を間違えることがなくなり良質な結晶が得
ることが可能になった。
[Effects of the Invention] The crystal growth apparatus according to the present invention has a time limit control section in which the moving mechanism operates only for a predetermined period of time, and can operate for only a predetermined period of time as intended by the operator, thereby preventing operational errors. This eliminates the need to make mistakes in the amount of movement, making it possible to obtain high-quality crystals.

第1図は、本発明による結晶成長装置の一実施例を示す
断面図、第2図は、従来例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a crystal growth apparatus according to the present invention, and FIG. 2 is a sectional view showing a conventional example.

100.200・・・回転楕円反射鏡、101゜201
・・・多結晶素材、102,202・・・単結晶素材、
103.203・・・チャック(上)、104゜204
・・・チャック(下>、105,205・・・シャフト
(上)、106,206・・・シャフト(下)、107
.207・・・熱源、108,208・・・フローティ
ングゾーン、109.209・・・炉芯管、11021
0・・・観察窓、111,211・・・カメラ、112
.212・・・モニタTV、113,213・・・移動
機構(1)、114,214・・・回転機構(上)、1
15.215・・・回転機構(下)、116,216・
・・移動機構(2)  117.217・・・制御部、
118.218・・・電源、119・・・時限制御部。
100.200...Spheroidal reflector, 101°201
... Polycrystalline material, 102,202... Single crystal material,
103.203...Chuck (top), 104°204
...Chuck (lower>, 105,205...Shaft (upper), 106,206...Shaft (lower), 107
.. 207...Heat source, 108,208...Floating zone, 109.209...Furnace core tube, 11021
0... Observation window, 111, 211... Camera, 112
.. 212... Monitor TV, 113, 213... Moving mechanism (1), 114, 214... Rotating mechanism (top), 1
15.215... Rotating mechanism (bottom), 116,216.
...Movement mechanism (2) 117.217...Control unit,
118.218...Power supply, 119...Time control section.

Claims (1)

【特許請求の範囲】 1、移動機構により移動可能な回転楕円反射鏡の第1の
焦点部分に熱源を設け、前記回転楕円反射鏡の第2の焦
点部分に回転機構により回転可能なシャフトの先端に取
り付けられた結晶素材を設け、前記熱源から発する赤外
線を集中して前記結晶素材を溶融させ結晶を成長させる
フローティングゾーン法による結晶成長装置において、
前記移動機構を所定の時間、所定の速度で動作させる移
動機構の時限制御部を有することを特徴とする結晶成長
装置。 2、回転機構に所定の時間、所定の速度で動作させる回
転機構の時限制御部を有する請求項1記載の結晶成長装
置。
[Claims] 1. A heat source is provided at a first focal point of a spheroidal reflector that is movable by a moving mechanism, and a tip of a shaft that is rotatable by a rotation mechanism is provided at a second focal point of the spheroidal reflector. In a crystal growth apparatus using a floating zone method, a crystal material attached to the crystal material is provided, and infrared rays emitted from the heat source are concentrated to melt the crystal material and grow the crystal,
A crystal growth apparatus comprising: a time control section for a moving mechanism that operates the moving mechanism at a predetermined speed for a predetermined time. 2. The crystal growth apparatus according to claim 1, further comprising a time control section for the rotation mechanism that causes the rotation mechanism to operate at a predetermined speed for a predetermined time.
JP5705490A 1990-03-07 1990-03-07 Crystal growing device Pending JPH03257091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5705490A JPH03257091A (en) 1990-03-07 1990-03-07 Crystal growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5705490A JPH03257091A (en) 1990-03-07 1990-03-07 Crystal growing device

Publications (1)

Publication Number Publication Date
JPH03257091A true JPH03257091A (en) 1991-11-15

Family

ID=13044733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5705490A Pending JPH03257091A (en) 1990-03-07 1990-03-07 Crystal growing device

Country Status (1)

Country Link
JP (1) JPH03257091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004072333A1 (en) * 2003-02-11 2004-08-26 Topsil Semiconductor Materials A/S An apparatus for and a method of manufacturing a single crystal rod

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004072333A1 (en) * 2003-02-11 2004-08-26 Topsil Semiconductor Materials A/S An apparatus for and a method of manufacturing a single crystal rod
US7335257B2 (en) 2003-02-11 2008-02-26 Topsil Semiconductor Materials A/S Apparatus for and method of manufacturing a single crystal rod

Similar Documents

Publication Publication Date Title
JPH0726817B2 (en) Crystal size measuring device
JP2004086082A (en) Optical system controller for video camera
EP0491284B1 (en) Volume display system and method for inside-out viewing
JPH03257091A (en) Crystal growing device
JPS61289617A (en) Manufacturing device for single-crystal thin film
US3103574A (en) figure
JPH02289489A (en) Device for producing crystal and production thereof
JP3592909B2 (en) Single crystal pulling device
JPH0511497Y2 (en)
JPS61163185A (en) Device for preparing single crystal heated with convergent infrared ray
JP2586320B2 (en) Image furnace
JPS6071592A (en) Manufacture of single crystal
JPH0354186A (en) Floating zone-melting device
JP3723715B2 (en) Single crystal growth equipment
JPS63130272A (en) Observing device for welding
JPS63142339A (en) Projecting device
JPH03188269A (en) Device for melting vapor depositing material of vapor deposition device
JP5752743B2 (en) Observation device
JPS61209984A (en) Device for preparing single crystal provided with convergent infrared ray heating means
JPS6071589A (en) Manufacture of single crystal
JPH0527028B2 (en)
JPH0244927Y2 (en)
JPH1089853A (en) Image furnace
JPH0253399B2 (en)
JPH0541598B2 (en)