JPH0541598B2 - - Google Patents
Info
- Publication number
- JPH0541598B2 JPH0541598B2 JP8449584A JP8449584A JPH0541598B2 JP H0541598 B2 JPH0541598 B2 JP H0541598B2 JP 8449584 A JP8449584 A JP 8449584A JP 8449584 A JP8449584 A JP 8449584A JP H0541598 B2 JPH0541598 B2 JP H0541598B2
- Authority
- JP
- Japan
- Prior art keywords
- half mirror
- infrared
- mirror
- screen
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000004033 diameter control Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、F.Z.装置（赤外線集光加熱結晶製造
装置）に関し、特に結晶育成を自動的に行なう
Ｆ、Z.装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an FZ apparatus (infrared condensed heating crystal production apparatus), and particularly to an F, Z apparatus that automatically grows crystals.
従来、FZ装置での結晶合成に自動制御は行な
われておらず、回転楕円面鏡の一箇所に設けられ
た孔からの、画像をスクリーン上で観察するのみ
であつた。
Conventionally, crystal synthesis in the FZ apparatus was not automatically controlled, and the only way to do so was to observe the image on a screen through a hole provided in one location of the spheroidal mirror.
従つて、結晶育成を行なうためには、常時画像
を監視し、ランプパワーあるいはギヤツプ調整を
手動で行なわなければならなかつた。 Therefore, in order to grow crystals, it was necessary to constantly monitor images and manually adjust the lamp power or gap.
本発明は以上の問題点を解決するもので、その
目的とするところは、長時間（10時間以上）安定
して結晶育成を行なうFZ装置を提供することに
ある。
The present invention solves the above problems, and its purpose is to provide an FZ apparatus that can stably grow crystals for a long time (10 hours or more).
本発明のFZ装置は、回転楕円面鏡の一部に設
けた孔から、レンズ、プリズム、反射鏡を経て、
スクリーンに至る光路の中間にハーフミラーを設
け、該ハーフミラーからの像を光学センサにより
モニターし、結晶の自動育成を行なうもので、特
にハーフミラーの位置合せを任意に行ない、制御
精度が高いことを特徴とする。
The FZ device of the present invention passes through a hole provided in a part of a spheroidal mirror, a lens, a prism, and a reflecting mirror.
A half mirror is installed in the middle of the optical path leading to the screen, and the image from the half mirror is monitored by an optical sensor to automatically grow crystals.In particular, the half mirror can be positioned arbitrarily, and the control accuracy is high. It is characterized by
第１図に従前のFZ装置の概略を示す。 Figure 1 shows an outline of the previous FZ device.
ここで、１は回転楕円面鏡、２はハロゲンラン
プ、３は石英管、４はガス導入口、５はガス排出
口、６は原料棒、７は種結晶、８は溶融帯、９は
上部シヤフト、１０は下部シヤフト、１１はレン
ズ（含プリズム）、１２はスクリーンである。 Here, 1 is a spheroidal mirror, 2 is a halogen lamp, 3 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part 10 is a lower shaft, 11 is a lens (including a prism), and 12 is a screen.
上部シヤフト９に原料棒６をセツトし、下部シ
ヤフト１０に種結晶７をセツトする。 A raw material rod 6 is set on the upper shaft 9, and a seed crystal 7 is set on the lower shaft 10.
ハロゲンランプ２のパワーを投入し、回転楕円
面鏡１より該ハロゲンランプの光を石英管３の中
央部に集光する。 The power of the halogen lamp 2 is turned on, and the light from the halogen lamp is focused onto the center of the quartz tube 3 by the spheroidal mirror 1.
この時、ガス導入口４から雰囲気ガスを導入
し、ガス排出口５から雰囲気ガスを排出する。 At this time, atmospheric gas is introduced through the gas inlet 4 and exhausted through the gas exhaust port 5.
集光部において、原料棒６の先端と種結晶７の
先端とを溶融接触させて、溶融帯８を形成する。
この時、上部シヤフト９及び下部シヤフト１０
は、同方向ないしは逆方向に回転させ、上下のシ
ヤフトが同時に下方へ移動する。 In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8.
At this time, the upper shaft 9 and the lower shaft 10
are rotated in the same direction or in opposite directions, and the upper and lower shafts move downward at the same time.
該集光部の状況をレンズ１１（含プリズム）及
び反射鏡を経て、スクリーン１２上に投映し、常
時、該投映像を監視しつつ、ランプパワーあるい
は原料棒と種結晶の間隔（ギヤツプ）を調節しな
がら、結晶育成を行なう。 The state of the light condensing section is projected onto the screen 12 via the lens 11 (including the prism) and the reflecting mirror, and while constantly monitoring the projected image, the lamp power or the gap between the raw material rod and the seed crystal is adjusted. Crystal growth is performed while making adjustments.
第２図に光学系の概要を示す。ここでａは平面
図、ｂは側面図である。 Figure 2 shows an overview of the optical system. Here, a is a plan view and b is a side view.
２１は溶融帯、２２はレンズ（含プリズム）、
２３は反射鏡、２４はスクリーン、２５はフロン
トパネルである。 21 is a melting zone, 22 is a lens (including a prism),
23 is a reflecting mirror, 24 is a screen, and 25 is a front panel.
第３図に本発明のFZ装置で使用する自動制御
システムのブロツク図を示す。 FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention.
ここで３１は光学系、３２はセンサ部、３３は
コントローラ部、３４はキー入力部、３５はDA
変換器、３６はAD変換器、３７は表示部、３８
はプリンター部、３９はランプパワーコントロー
ル部、４０はギヤツプ調整部である。 Here, 31 is an optical system, 32 is a sensor section, 33 is a controller section, 34 is a key input section, and 35 is a DA
Converter, 36 is an AD converter, 37 is a display unit, 38
39 is a lamp power control section, and 40 is a gap adjustment section.
溶融帯の像は、光学系３１を経て、センサ部３
２に到達し、コントロール部３９でランプパワー
を調節し、溶融帯の温度を制御するか、又はギヤ
ツプ調整部４０で融液の高さを調節する。 The image of the melted zone passes through the optical system 31 and is sent to the sensor section 3.
2, the control section 39 adjusts the lamp power to control the temperature of the melting zone, or the gap adjustment section 40 adjusts the height of the melt.
ランプパワー、あるいはギヤツプは、AD変換
器３６を経て、コントローラ部３３に再度フイー
ドバツクされる。 The lamp power or gap is fed back to the controller section 33 via the AD converter 36.
一方、キー入力部３４では、初期の各種定数を
インプツトし、表示部３７は、その時のランプパ
ワー等を表示する。更にプリンター部３８では、
所定の時間毎に、ランプパワー、溶融帯径、溶融
帯の高さ等をプリントアウトする。 On the other hand, the key input section 34 inputs various initial constants, and the display section 37 displays the lamp power and the like at that time. Furthermore, in the printer section 38,
The lamp power, melting zone diameter, melting zone height, etc. are printed out at predetermined intervals.
以下、本発明について、実施例に基づき詳細に
説明する。
Hereinafter, the present invention will be described in detail based on examples.
実施例 １
第４図に本発明装置の光学系の概要を示す。こ
こでａは平面図、ｂは側面図である。Example 1 FIG. 4 shows an outline of the optical system of the apparatus of the present invention. Here, a is a plan view and b is a side view.
４１は溶融帯、４２はレンズ（含プリズム）、
４３は反射鏡、４４はスクリーン、４５はハーフ
ミラー、４６はセンサ、４７は絞り、４８はフロ
ントパネルである。 41 is a melting zone, 42 is a lens (including a prism),
43 is a reflecting mirror, 44 is a screen, 45 is a half mirror, 46 is a sensor, 47 is an aperture, and 48 is a front panel.
実施例 ２
第５図ａにハーフミラー取り付け部の概要を示
し、ｂにハーフミラーの回転機構を示す。Embodiment 2 FIG. 5a shows an outline of the half mirror attachment part, and FIG. 5b shows the rotation mechanism of the half mirror.
ここで５１はハーフミラー、５２はガイドフレ
ームである。ハーフミラーには取り付け位置調整
用に調整溝５３が設けてあり、ガイドフレームに
もこれに対応する部位に調整溝５４を設ける。 Here, 51 is a half mirror, and 52 is a guide frame. The half mirror is provided with an adjustment groove 53 for adjusting the mounting position, and the guide frame is also provided with an adjustment groove 54 at a corresponding location.
ハーフミラー５１は３重構造になつており、ミ
ラーは内側フレーム５５に保持され、更にこれが
外側フレーム５６に保持されている。 The half mirror 51 has a triple structure, and is held by an inner frame 55, which is further held by an outer frame 56.
かかる構造により、ハーフミラーは、前後、左
右、上下に移動可能となり、しかもミラーの向き
を任意の方向に回転可能となる。 With this structure, the half mirror can be moved back and forth, left and right, and up and down, and the mirror can be rotated in any direction.
以上述べたように、本発明によれば、結晶の育
成状況を観察しつつ、自動育成を可能とするもの
で、特にハーフミラーの位置・向きを任意に調節
可能とすることにより、溶融帯の像を正確にセン
サ部へ送り込む事が可能となり自動制御の精度が
大巾に向上した。
As described above, according to the present invention, it is possible to automatically grow crystals while observing the growth status of the crystal, and in particular, by making it possible to arbitrarily adjust the position and orientation of the half mirror, the molten zone can be grown. It became possible to accurately send the image to the sensor section, and the accuracy of automatic control was greatly improved.
本発明の装置は、ルビー、サフアイア、アレキ
サンドライト等の宝石用単結晶は勿論、YIG、
YAG、GGG等の工業用単結晶の自動育成にも充
分使用可能であり、色ムラ、気泡、欠陥等の無
い、高品質な単結晶を育成できる。 The device of the present invention can be used not only for gemstone single crystals such as ruby, sapphire, and alexandrite, but also for YIG,
It can be fully used for automatic growth of industrial single crystals such as YAG and GGG, and can grow high-quality single crystals without color unevenness, bubbles, defects, etc.
第１図は従前のFZ装置の概要を示す。第２図
は従前のFZ装置の光学系の概要を示す。第３図
は本発明のFZ装置で使用する自動制御システム
のブロツク図を示す。第４図は本発明のFZ装置
の光学系の概要を示す。第５図は本発明のFZ装
置のミラー取り付け部及びハーフミラーの回転機
構を示す。
Figure 1 shows an overview of the conventional FZ device. Figure 2 shows an overview of the optical system of the conventional FZ device. FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention. FIG. 4 shows an outline of the optical system of the FZ device of the present invention. FIG. 5 shows the mirror attachment part and half mirror rotation mechanism of the FZ device of the present invention.
Claims (1)
光を、回転楕円面鏡により、反射・集光し、該集
光部において、原料棒と種結晶とを、溶融帯を仲
介として結合して、フローテイングゾーンを形成
し、該フローテイングゾーンを、一定速度で移動
することにより、前記種結晶上に結晶を析出させ
る赤外線集光加熱単結晶製造装置において、前記
回転楕円面鏡の一部に設けた孔から、レンズ、プ
リズム、反射鏡等を経て、溶融帯の像をスクリー
ン上に投影する光路の中間に、ハーフミラーを設
け、該ハーフミラーからの像を光学センサにより
モニターし、自動直径制御を行なうことを特徴と
する赤外線集光加熱単結晶製造装置。 ２ ハーフミラーの位置を前後・左右・上下方向
に移動可能とし、且つハーフミラーの向きを任意
の方向に回転可能であることを特徴とする、特許
請求範囲第１項記載の赤外線集光加熱単結晶製造
装置。[Claims] 1. Light emitted from a high-temperature light source such as a halogen lamp is reflected and focused by a spheroidal mirror, and in the light focusing section, a raw material rod and a seed crystal are connected via a melting zone. In the infrared condensed heating single crystal manufacturing apparatus, the infrared condensed heating single crystal manufacturing apparatus deposits a crystal on the seed crystal by moving the floating zone at a constant speed. A half mirror is installed in the middle of the optical path that projects an image of the melted zone onto a screen through a hole made in a part of the screen, through lenses, prisms, reflectors, etc., and the image from the half mirror is monitored by an optical sensor. An infrared condensed heating single crystal production device characterized by automatic diameter control. 2. The infrared condensing heating unit according to claim 1, characterized in that the position of the half mirror can be moved back and forth, left and right, and up and down, and the direction of the half mirror can be rotated in any direction. Crystal manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449584A JPS60226488A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449584A JPS60226488A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226488A JPS60226488A (en) | 1985-11-11 |
| JPH0541598B2 true JPH0541598B2 (en) | 1993-06-23 |
Family
ID=13832223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8449584A Granted JPS60226488A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226488A (en) |
-
1984
- 1984-04-26 JP JP8449584A patent/JPS60226488A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226488A (en) | 1985-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |