JPH0541599B2 - - Google Patents
Info
- Publication number
- JPH0541599B2 JPH0541599B2 JP8449684A JP8449684A JPH0541599B2 JP H0541599 B2 JPH0541599 B2 JP H0541599B2 JP 8449684 A JP8449684 A JP 8449684A JP 8449684 A JP8449684 A JP 8449684A JP H0541599 B2 JPH0541599 B2 JP H0541599B2
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- image
- zone
- optical sensor
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、FZ装置（赤外線集光加熱端結晶製
造装置）に関し、特に結晶育成を自動的に行なう
FZ装置に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to an FZ device (infrared condensed heating edge crystal manufacturing device), and in particular a device for automatically growing crystals.
Regarding FZ equipment.
従来、FZ装置での結晶合成に自動制御は行な
われておらず、回転楕円面鏡の一箇所に設けられ
た孔からの、画像をスクリーン上で観察するのみ
であつた。
Conventionally, crystal synthesis in the FZ apparatus was not automatically controlled, and the only way to do so was to observe the image on a screen through a hole provided in one location of the spheroidal mirror.
従つて、結晶育成を行なうためには、常時画像
を監視し、ランプパワーあるいはギヤツプ調整を
手動で行なわなければならなかつた。 Therefore, in order to grow crystals, it was necessary to constantly monitor images and manually adjust the lamp power or gap.
本発明は以上の問題点を解決するもので、その
目的とするところは、長時間（10時間以上）安定
して結晶育成を行なうFZ装置を提供することに
ある。
The present invention solves the above problems, and its purpose is to provide an FZ apparatus that can stably grow crystals for a long time (10 hours or more).
本発明のFZ装置は、回転楕円面鏡の一部に設
けた孔から、レンズ、プリズム、ハーフミラーを
透過した溶融帯の像を、直接光学センサ上に結像
させ、該光学センサからの信号を用いて結晶の自
動育成を行ない、同時に前記ハーフミラーからの
反射像を、反射鏡を経てスクリーン上に投影し、
画像観察を行なうもので、光学センサへの像の取
り込み精度が高く、結晶の自動制御精度が高いこ
とを特徴とする。
The FZ device of the present invention forms an image of the molten zone that has passed through a lens, a prism, and a half mirror directly onto an optical sensor through a hole provided in a part of a spheroidal mirror, and receives a signal from the optical sensor. to automatically grow crystals using a mirror, and at the same time project the reflected image from the half mirror onto a screen via a reflecting mirror,
It performs image observation, and is characterized by high accuracy in capturing images into the optical sensor and high accuracy in automatic crystal control.
第１図に従前のFZ装置の概要を示す。 Figure 1 shows an overview of the previous FZ device.
ここで、１は回転楕円面鏡、２はハロゲンラン
プ、３は石英管、４はガス導入口、５はガス排出
口、６は原料棒、７は種結晶、８は溶融帯、９は
上部シヤフト、１０は下部シヤフト、１１はレン
ズ（含プリズム）、１２はスクリーンである。 Here, 1 is a spheroidal mirror, 2 is a halogen lamp, 3 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part 10 is a lower shaft, 11 is a lens (including a prism), and 12 is a screen.
上部シヤフト９に原料棒６をセツトし、下部シ
ヤフト１０に種結晶７をセツトする。 A raw material rod 6 is set on the upper shaft 9, and a seed crystal 7 is set on the lower shaft 10.
ハロゲンランプ２のパワーを投入し、回転楕円
面鏡１により該ハロゲンランプの光を石英管３の
中央部に集光する。 The power of the halogen lamp 2 is turned on, and the spheroidal mirror 1 focuses the light from the halogen lamp onto the center of the quartz tube 3.
この時、ガス導入口４から雰囲気ガスを導入
し、ガス排出口５から雰囲気ガスを排出する。 At this time, atmospheric gas is introduced through the gas inlet 4 and exhausted through the gas exhaust port 5.
集光部において、原料棒６の先端と種結晶７の
先端とを溶融接触させて、溶融帯８を形成する。
この時、上部シヤフト９及び下部シヤフト１０は
同方向ないしは逆方向に回転させ、上下のシヤフ
トが同時に下方へ移動する。 In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8.
At this time, the upper shaft 9 and the lower shaft 10 are rotated in the same direction or in opposite directions, and the upper and lower shafts simultaneously move downward.
該集光部の状況をレンズ１１（含プリズム）及
び反射鏡を経て、スクリーン１２上に投映し、常
時、該投映像を監視しつつ、ランプパワーあるい
は原料棒と種結晶の間隔（ギヤツプ）を調節しな
がら、結晶育成を行なう。 The state of the light condensing section is projected onto the screen 12 via the lens 11 (including the prism) and the reflecting mirror, and while constantly monitoring the projected image, the lamp power or the gap between the raw material rod and the seed crystal is adjusted. Crystal growth is performed while making adjustments.
第２図に光学系の概要を示す。ここでａは平面
図、ｂは側面図である。 Figure 2 shows an overview of the optical system. Here, a is a plan view and b is a side view.
２１は溶融帯、２２はレンズ（含プリズム）、
２３は反射鏡、２４はスクリーン、２５はフロン
トパネルである。 21 is a melting zone, 22 is a lens (including a prism),
23 is a reflecting mirror, 24 is a screen, and 25 is a front panel.
第３図に本発明のFZ装置で使用する自動制御
システムのブロツク図を示す。 FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention.
ここで３１は光学系、３２はセンサ部、３３は
コントローラ部、３４はキー入力部、３５はDA
変換器、３６はAD変換器、３７は表示部、３８
はプリンター部、３９はランプパワーコントロー
ル部、４０はギヤツプ調整部である。 Here, 31 is an optical system, 32 is a sensor section, 33 is a controller section, 34 is a key input section, and 35 is a DA
Converter, 36 is an AD converter, 37 is a display unit, 38
39 is a lamp power control section, and 40 is a gap adjustment section.
溶融帯の像は、光学系３１を経て、センサ部３
２に到達し、コントロール部３９でランプパワー
を調節し、溶融帯の温度を制御するか、又はギヤ
ツプ調整部４０で融液の高さを調節する。 The image of the melted zone passes through the optical system 31 and is sent to the sensor section 3.
2, the control section 39 adjusts the lamp power to control the temperature of the melting zone, or the gap adjustment section 40 adjusts the height of the melt.
ランプパワー、あるいはギヤツプは、AD変換
器３６を経て、コントローラ部３３に再度フイー
ドバツクされる。 The lamp power or gap is fed back to the controller section 33 via the AD converter 36.
一方、キー入力部３４では、初期の各種定数を
インプツトし、表示部３７は、その時のランプパ
ワー等を表示する。更にプリンター部３８では、
所定の時間毎に、ランプパワー、溶融帯径、溶融
帯の高さ等をプリントアウトする。 On the other hand, the key input section 34 inputs various initial constants, and the display section 37 displays the lamp power and the like at that time. Furthermore, in the printer section 38,
The lamp power, melting zone diameter, melting zone height, etc. are printed out at predetermined intervals.
以下、本発明について、実施例に基づき詳細に
説明する。
Hereinafter, the present invention will be described in detail based on examples.
第４図に本発明装置の光学系の概要を示す。こ
こでａは平面図、ｂは側面図である。 FIG. 4 shows an outline of the optical system of the apparatus of the present invention. Here, a is a plan view and b is a side view.
４１は溶融帯、４２はレンズ（含プリズム）、
４３はハーフミラー、４４は光学センサ、４５は
反射鏡、４６はスクリーン、４７はフロントパネ
ルである。 41 is a melting zone, 42 is a lens (including a prism),
43 is a half mirror, 44 is an optical sensor, 45 is a reflecting mirror, 46 is a screen, and 47 is a front panel.
溶融帯の像をハーフミラーからの透過で、光学
センサに導入している為、ハーフミラーの位置、
向きが多少変動しても、常に光学センサの中心に
画像を位置させられる為、極めて制御精度が高い
利点を有する。 Since the image of the molten zone is transmitted through the half mirror and introduced into the optical sensor, the position of the half mirror,
Even if the orientation changes somewhat, the image can always be positioned at the center of the optical sensor, so it has the advantage of extremely high control accuracy.
以上述べたように、本発明によれば、スクリー
ン上で結晶の育成状況を観察しつつ、結晶の自動
育成を可能とするもので、特にハーフミラーの調
節に神経を使う必要が無く、長時間安定して結晶
育成が行なえる。
As described above, according to the present invention, it is possible to automatically grow crystals while observing the crystal growth status on the screen, and there is no need to be particularly careful in adjusting the half mirror, and it is possible to grow crystals over a long period of time. Crystal growth can be performed stably.
本発明の装置は、ルビー、サフアイア、アレキ
サンドライト等の宝石用単結晶は勿論、YIG、
YAG、GGG等の工業用単結晶の自動育成にも使
用可能であり、色ムラ、気泡、欠陥等の無い、高
品質な単結晶を育成できる。 The device of the present invention can be used not only for gemstone single crystals such as ruby, sapphire, and alexandrite, but also for YIG,
It can also be used to automatically grow industrial single crystals such as YAG and GGG, and can grow high-quality single crystals without color unevenness, bubbles, defects, etc.
第１図は従前のFZ装置の概要を示す。第２図
ａ，ｂは従前のFZ装置の光学系の概要を示す。
第３図は本発明のFZ装置で使用する自動制御シ
ステムのブロツク図を示す。第４図は本発明の
FZ装置の光学系の概要を示す。
ａは平面図、ｂは側面図である。
Figure 1 shows an overview of the conventional FZ device. Figures 2a and 2b show an overview of the optical system of a conventional FZ device.
FIG. 3 shows a block diagram of the automatic control system used in the FZ device of the present invention. Figure 4 shows the present invention.
An overview of the optical system of the FZ device is shown. A is a plan view, and b is a side view.
Claims (1)
光を、回転楕円面鏡により、反射・集光し、該集
光部において、原料棒と種結晶とを、溶融帯を仲
介として結合して、フローテイングゾーンを形成
し、該フローテイングゾーンを一定速度で移動す
ることにより、前記種結晶上に結晶を析出させる
赤外線集光加熱単結晶製造装置において、前記回
転楕円面鏡の一部に設けた孔から、レンズ、プリ
ズム、ハーフミラーを透過して、溶融帯の像を直
接光学センサ上に結像させ、該光学センサからの
信号を用いて結晶の自動育成を行なうと同時に、
前記ハーフミラーからの反射像を反射鏡を経て、
スクリーン上に投影し、画像観察を行なうことを
特徴とする赤外線集光加熱単結晶製造装置。1. Light emitted from a high-temperature light source, such as a halogen lamp, is reflected and focused by a spheroidal mirror, and in the focusing section, the raw material rod and the seed crystal are combined via the molten zone to create a flow In an infrared condensed heating single crystal production apparatus for depositing crystals on the seed crystal by forming a floating zone and moving the floating zone at a constant speed, a hole provided in a part of the spheroidal mirror is provided. The image of the molten zone is directly formed on an optical sensor by passing through a lens, prism, or half mirror, and the signal from the optical sensor is used to automatically grow a crystal.
The reflected image from the half mirror passes through a reflecting mirror,
An infrared condensed heating single crystal manufacturing device characterized by projecting images onto a screen and performing image observation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449684A JPS60226489A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8449684A JPS60226489A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226489A JPS60226489A (en) | 1985-11-11 |
| JPH0541599B2 true JPH0541599B2 (en) | 1993-06-23 |
Family
ID=13832251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8449684A Granted JPS60226489A (en) | 1984-04-26 | 1984-04-26 | Single crystal preparation apparatus heated by focused infrared radiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226489A (en) |
-
1984
- 1984-04-26 JP JP8449684A patent/JPS60226489A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226489A (en) | 1985-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |