JPH03256358A - Semiconductor memory device and manufacturing method - Google Patents

Semiconductor memory device and manufacturing method

Info

Publication number
JPH03256358A
JPH03256358A JP2054533A JP5453390A JPH03256358A JP H03256358 A JPH03256358 A JP H03256358A JP 2054533 A JP2054533 A JP 2054533A JP 5453390 A JP5453390 A JP 5453390A JP H03256358 A JPH03256358 A JP H03256358A
Authority
JP
Japan
Prior art keywords
bit line
capacity section
film
accumulated
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2054533A
Other languages
Japanese (ja)
Other versions
JP2898686B2 (en
Inventor
Kazunari Torii
Toru Kaga
Eiji Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2054533A priority Critical patent/JP2898686B2/en
Publication of JPH03256358A publication Critical patent/JPH03256358A/en
Application granted granted Critical
Publication of JP2898686B2 publication Critical patent/JP2898686B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a fine memory cell which uses a thin ferroelectric film for accumulated electrodes by covering an offset induced by a separation oxide layer between a word line, a bit line and components with an insulation material so as to make the surface flat and then forming an accumulated capacity section which uses the ferroelectric thin film on the flattened surface.
CONSTITUTION: An accumulated capacity section is not directly formed on an offset induced by a separation oxide layer 2 between a word line 4, a bit line 8 and components, but the capacity section, which comprises a lower part of electrode, a thin ferroelectric film 15 and a plate electrode 16, is formed on a flattened surface covered with an insulation film 12 after having formed a switching transistor and the bit line 8.
COPYRIGHT: (C)1991,JPO&Japio
JP2054533A 1990-03-06 1990-03-06 Semiconductor memory device and method of manufacturing the same Expired - Lifetime JP2898686B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2054533A JP2898686B2 (en) 1990-03-06 1990-03-06 Semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2054533A JP2898686B2 (en) 1990-03-06 1990-03-06 Semiconductor memory device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH03256358A true JPH03256358A (en) 1991-11-15
JP2898686B2 JP2898686B2 (en) 1999-06-02

Family

ID=12973309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2054533A Expired - Lifetime JP2898686B2 (en) 1990-03-06 1990-03-06 Semiconductor memory device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2898686B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296262A (en) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp Semiconductor memory cell
US5365095A (en) * 1992-02-18 1994-11-15 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and process
US5382817A (en) * 1992-02-20 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a ferroelectric capacitor with a planarized lower electrode
US5418388A (en) * 1993-06-18 1995-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor with an adhesion layer
US5442213A (en) * 1993-06-23 1995-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with high dielectric capacitor having sidewall spacers
US5486713A (en) * 1993-01-05 1996-01-23 Nec Corporation Semiconductor device having a capacitor
US5567964A (en) * 1993-06-29 1996-10-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP0744772A1 (en) * 1995-05-24 1996-11-27 Siemens Aktiengesellschaft DRAM storage cell with vertical transistor and method for production thereof
US5661319A (en) * 1992-06-18 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device having capacitor
US5923062A (en) * 1994-10-11 1999-07-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device incorporating capacitors
US6271559B1 (en) 1997-11-04 2001-08-07 Hitachi, Ltd Semiconductor memory with information storage capacitance including an electrode containing precious metal and an added element
US6288931B1 (en) 1999-06-28 2001-09-11 Hyundai Electronics Industries Co., Ltd. Ferroelectric memory device having cell groups containing capacitors commonly coupled to transistor
US6822276B1 (en) 1998-09-10 2004-11-23 Renesas Technology Corp. Memory structure with a ferroelectric capacitor
EP2905809A1 (en) 2014-02-05 2015-08-12 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296262A (en) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp Semiconductor memory cell
US5365095A (en) * 1992-02-18 1994-11-15 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and process
US5449934A (en) * 1992-02-18 1995-09-12 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and process
US5382817A (en) * 1992-02-20 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a ferroelectric capacitor with a planarized lower electrode
US5661319A (en) * 1992-06-18 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device having capacitor
US5486713A (en) * 1993-01-05 1996-01-23 Nec Corporation Semiconductor device having a capacitor
US5418388A (en) * 1993-06-18 1995-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor with an adhesion layer
US5652186A (en) * 1993-06-23 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
US5534458A (en) * 1993-06-23 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers
US5442213A (en) * 1993-06-23 1995-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with high dielectric capacitor having sidewall spacers
US5668041A (en) * 1993-06-23 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a capacitor
US5567964A (en) * 1993-06-29 1996-10-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5693553A (en) * 1993-06-29 1997-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method of the same
US5923062A (en) * 1994-10-11 1999-07-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device incorporating capacitors
US5736761A (en) * 1995-05-24 1998-04-07 Siemens Aktiengesellschaft DRAM cell arrangement and method for its manufacture
EP0744772A1 (en) * 1995-05-24 1996-11-27 Siemens Aktiengesellschaft DRAM storage cell with vertical transistor and method for production thereof
US6271559B1 (en) 1997-11-04 2001-08-07 Hitachi, Ltd Semiconductor memory with information storage capacitance including an electrode containing precious metal and an added element
US6822276B1 (en) 1998-09-10 2004-11-23 Renesas Technology Corp. Memory structure with a ferroelectric capacitor
US6288931B1 (en) 1999-06-28 2001-09-11 Hyundai Electronics Industries Co., Ltd. Ferroelectric memory device having cell groups containing capacitors commonly coupled to transistor
EP2905809A1 (en) 2014-02-05 2015-08-12 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same
US9373626B2 (en) 2014-02-05 2016-06-21 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same
US9773794B2 (en) 2014-02-05 2017-09-26 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2898686B2 (en) 1999-06-02

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