JPH03254949A - Aperture electrode and manufacture thereof - Google Patents
Aperture electrode and manufacture thereofInfo
- Publication number
- JPH03254949A JPH03254949A JP5335190A JP5335190A JPH03254949A JP H03254949 A JPH03254949 A JP H03254949A JP 5335190 A JP5335190 A JP 5335190A JP 5335190 A JP5335190 A JP 5335190A JP H03254949 A JPH03254949 A JP H03254949A
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- ceramic insulating
- control electrode
- insulating substrate
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 8
- 238000001259 photo etching Methods 0.000 abstract description 4
- 229910003460 diamond Inorganic materials 0.000 abstract description 2
- 239000010432 diamond Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、トナージェット記録装置等において、帯電し
たｌ・ナーを変調するアパチャー電極とその製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an aperture electrode that modulates charged l-toner in a toner jet recording device and the like, and a method for manufacturing the same.
［従来技術］
従来、アパチャー電極は次に述べるように製造されてい
た。まず、１００μｍ（マイクロ・メートル）前後の厚
さの高分子絶縁フィルム（ポリエステル、ポリイミド、
ポリエチレンなと）の両面に１０μｍ程度の厚さの金属
箔（ステンレス、銅など）を接着剤によって張り付けた
多層膜に、エキシマレーザ−加工によって、−列にアパ
チャー（穴若しくはスリット）をあける。そして、フォ
トエツチング法によって、高分子絶縁フィルムの一方の
面の前記アパチャーの周りに金属箔を独立にバターニン
グして多数の制御電極層を形成していた。[Prior Art] Conventionally, aperture electrodes have been manufactured as described below. First, a polymer insulation film (polyester, polyimide,
Apertures (holes or slits) are made in rows by excimer laser processing in a multilayer film in which metal foil (stainless steel, copper, etc.) with a thickness of about 10 μm is attached to both sides of a polyethylene film using an adhesive. Then, a large number of control electrode layers were formed by independently patterning metal foil around the apertures on one side of the polymer insulating film using a photoetching method.
［発明が解決しようとする課題］
しかしながら、」二連したような製造方法では、アパチ
ャー電極の絶縁層と基準電極層及び制御電極層との接合
に接着剤を用いているので、アパチャーに接着剤が露出
することがあり、そこにトナーが吸着されてアパチャー
が詰まってしまい、記録不能になる虞れがあるという問
題点があった。[Problems to be Solved by the Invention] However, in the double manufacturing method, an adhesive is used to bond the insulating layer of the aperture electrode to the reference electrode layer and the control electrode layer. There was a problem in that the toner could be exposed and the aperture would be clogged with toner adsorbed there, making it impossible to record.
また、このアパチャー電極は、トナー担持体と対向電極
との１ｍｍ （ミリ・メートル）以下のギャップに接触
しないように設けられており、しかも、このアパチャー
電極は１００μｍ前後の高分子絶縁フィルムと１０μｍ
前後の二枚の金属箔からなる多層膜によって主に構成さ
れているので、その剛性が低く、僅かな力が加わっても
変形してしまい、トナー担持体あるいは対向電極に接触
してしまうことがあった。このため高電圧のかかってい
るトナー担持体や対向電極とこのアパチャー電極との間
で異常放電が起こって、その電気ノイズによって装置の
誤動作を起こす虞れがあるという問題点があった。Furthermore, this aperture electrode is provided so as not to come into contact with a gap of 1 mm (millimeter) or less between the toner carrier and the counter electrode.
Since it is mainly composed of a multilayer film consisting of two metal foils on the front and back, its rigidity is low, and it deforms even when a slight force is applied, preventing it from coming into contact with the toner carrier or counter electrode. there were. Therefore, there is a problem in that abnormal discharge occurs between the toner carrier or counter electrode to which a high voltage is applied and the aperture electrode, and the resulting electrical noise may cause malfunction of the apparatus.
本発明は、」二連した問題点を解決するためになされた
ものであり、記録不能や誤動作の起こらない品質の優れ
たアパチャー電極及びその製造方法を提供することを目
的としている。The present invention has been made to solve the two problems, and aims to provide an aperture electrode of excellent quality that does not cause recording failure or malfunction, and a method for manufacturing the same.
［課題を解決するための手段］
この目的を達成するために、本発明のアパチャー電極は
、極薄のセラミクス絶縁基板と、該セラミクス絶縁基板
の一方の面に薄膜形成法によって設けられた基準電極膜
と、前記セラミクス基板の他方の面に薄膜形成法によっ
て独立に設けられた多数の制御電極膜と、該制御電極膜
各々の略中心に設けられ、且つ前記セラミクス絶縁基板
を貫通しているアパチャーとから構成されている。[Means for Solving the Problems] In order to achieve this object, the aperture electrode of the present invention comprises an extremely thin ceramic insulating substrate and a reference electrode provided on one surface of the ceramic insulating substrate by a thin film forming method. a film, a large number of control electrode films independently provided on the other surface of the ceramic substrate by a thin film formation method, and an aperture provided approximately at the center of each of the control electrode films and penetrating the ceramic insulating substrate. It is composed of.
又、この目的を達成するために、本発明のアパチャー電
極の製造方法は、極薄のセラミクス絶縁基板の一方の面
にスパッタリングなどの薄膜形成法により金属膜を形成
する基準電極膜形成工程と、前記セラミクス絶縁基板の
他方の面に薄膜形成法などによって独立した多数の金属
膜のパターンを形成する制御電極膜パターン形成工程と
、これらの工程の後、両面に金属膜の形成された前記セ
ラミクス絶縁基板を貫くように、前記制御電極膜パター
ンの独立した多数の金属膜各々の略中心にアパチャーを
設けるアパチャー形成工程とからなる。In addition, in order to achieve this object, the method for manufacturing an aperture electrode of the present invention includes a reference electrode film forming step of forming a metal film on one surface of an ultra-thin ceramic insulating substrate by a thin film forming method such as sputtering; A control electrode film pattern forming step of forming a large number of independent metal film patterns on the other surface of the ceramic insulating substrate by a thin film forming method, etc., and after these steps, the ceramic insulating substrate with metal films formed on both sides. The step of forming an aperture is to provide an aperture approximately at the center of each of the plurality of independent metal films of the control electrode film pattern so as to penetrate through the substrate.
［作用］
」二記の構成を有する本発明によれば、このアパチャー
電極はセラミクス絶縁基板に接着剤を用いずに薄膜形成
法を用いて基準電極膜及び制御電極膜を形成しであるの
で、アパチャー内にトナーが吸着されることがなくなる
。また、前記アパチャー電極は高分子絶縁フィルムに比
べて超越した剛性を持っているセラミクス絶縁基板をベ
ースとしであるので、トナー担持体と対向電極との小さ
なギャップに配置されて、少々の外力が加わっても、そ
れらに接触することが無い。[Function] According to the present invention having the configuration described in the following two sections, the aperture electrode has a reference electrode film and a control electrode film formed on a ceramic insulating substrate using a thin film forming method without using an adhesive. Toner is no longer adsorbed within the aperture. Furthermore, since the aperture electrode is based on a ceramic insulating substrate that has superior rigidity compared to polymeric insulating films, it is placed in a small gap between the toner carrier and the counter electrode, so that it is not subject to a slight external force. However, there is no contact with them.
［実施例］
以下、本発明を具体化した一実施例を図面を参照して説
明する。[Example] Hereinafter, an example embodying the present invention will be described with reference to the drawings.
最初に第１図を参照して本発明により製造されるアパチ
ャー電極の構成を説明する。First, the structure of an aperture electrode manufactured according to the present invention will be explained with reference to FIG.
アパチャー電極１はそれを貫く一列のアパチャー２が設
けられており、セラミクス絶縁基板３と、そのセラミク
ス絶縁基板３の一側面に設けられた基準電極層４と、そ
の反対面に前記アパチャー２の周りに電気的に独立して
設けられた制御電極層５から構成されている。セラミク
ス絶縁基板３はたいへん剛性のあるもので、アパチャー
電極１は変形することがほとんどなく、これをトナージ
ェット記録装置等に適用したとき、高電圧のかかってい
るトナー担持体や対向電極に接触することがなくなり、
接触による異常放電からくる電気ノイズによる装置の誤
動作が起こることがなくなる。The aperture electrode 1 is provided with a row of apertures 2 passing through it, and has a ceramic insulating substrate 3, a reference electrode layer 4 provided on one side of the ceramic insulating substrate 3, and a surrounding area of the apertures 2 on the opposite side. The control electrode layer 5 is provided electrically independently from the control electrode layer 5. The ceramic insulating substrate 3 is very rigid, and the aperture electrode 1 is hardly deformed. When this is applied to a toner jet recording device, etc., it comes into contact with a toner carrier or a counter electrode to which a high voltage is applied. There will be no more
Malfunctions of the device due to electrical noise caused by abnormal discharge due to contact will no longer occur.
次に、第２図を参照してこのアパチャー電極１の製造方
法について説明する。Next, a method of manufacturing this aperture electrode 1 will be explained with reference to FIG.
第２図（ａ）に示すような厚さ５０μｍ（２０μｍ〜３
００μｍ位までの適当な厚さでよい。）の極薄セラミク
ス絶縁基板３（例えば（株）脂化 ５
６
成Ｒナルタス、アルミナまたはジルコニアの基板）をベ
ースとして、第２図（ｂ）に示すように、スパッタリン
グ等の薄膜形成法を用いてセラミクス絶縁基板３の両面
に１μｍの厚みの銅膜６．７を形成する。次に、第２図
（ｃ）に示すように、前記銅膜６をフォトエツチング法
によってバターニングしてやり、制御電極層パターン８
を形成する。The thickness is 50 μm (20 μm to 3 μm) as shown in Figure 2(a).
An appropriate thickness of up to about 00 μm may be sufficient. ) is used as a base, using a thin film forming method such as sputtering, as shown in FIG. A copper film 6.7 with a thickness of 1 μm is formed on both sides of the ceramic insulating substrate 3. Next, as shown in FIG. 2(c), the copper film 6 is patterned by a photoetching method to form a control electrode layer pattern 8.
form.
フォトエツチング法とは、フォトレジストによってポジ
パターン形成後、塩化第二鉄溶液によって非マスク部の
銅を除去することによりパターンを形成する方法である
。次に、第２図（ｄ）に示すように、制御電極層パター
ン８のそれぞれにダイヤモンドドリルによって穴（アパ
チャー）９をあけてアパチャー電極１を完成する。The photo-etching method is a method in which a pattern is formed by forming a positive pattern using a photoresist and then removing copper in non-masked areas using a ferric chloride solution. Next, as shown in FIG. 2(d), holes (apertures) 9 are drilled in each of the control electrode layer patterns 8 using a diamond drill to complete the aperture electrodes 1.
ここで、スパッタリング等の薄膜形成は、接着剤を用い
ることなく、基板上に密着性のよい膜を形成できる方法
であって、これによって製造されたアパチャー電極１は
トナージェット装置に適用されたとき、アパチャー２の
内部には従来のような接着層はない。その結果、アパチ
ャーを通過するトナーがアパチャーに何着堆積すること
がなくなり、アパチャーずまりによる装置の記録不能が
起こらない。Here, thin film formation such as sputtering is a method that can form a film with good adhesion on a substrate without using an adhesive, and when the aperture electrode 1 manufactured by this method is applied to a toner jet device. , there is no conventional adhesive layer inside the aperture 2. As a result, toner passing through the aperture does not accumulate on the aperture, and the apparatus does not become unable to record due to aperture clogging.
本発明は、以上詳述した実施例に限定されるものでなく
、その趣旨を逸脱しない範囲において種々の変更を加え
ることができる。The present invention is not limited to the embodiments detailed above, and various changes can be made without departing from the spirit thereof.
例えば、セラミクス絶縁基板３の両面に形成する膜は、
銅に限らず導電性の材料であるアルミ、ステンレス、な
ど導電性のある金属を用いてもよい。For example, the films formed on both sides of the ceramic insulating substrate 3 are
In addition to copper, conductive metals such as aluminum and stainless steel may also be used.
また、その膜形成法は、スパッタリングの他、蒸着、イ
オンプレイティング、ＣＶＤあるいは、スクリーン印刷
法でもよい。In addition to sputtering, the film forming method may be vapor deposition, ion plating, CVD, or screen printing.
また、穴９の加工には、ドリルによって機械的に行なう
他に、エキシマレーザ−によって行なうこともできる。Further, the hole 9 can be machined not only mechanically with a drill but also with an excimer laser.
このエキシマレーザ−加工によれば、ＹＡＧやＣＯ２に
比べて、被加工物すなわちアルミナなどのセラミクス絶
縁基板を加熱することなくそこに数十μｍ径の微細な穴
なとをきれいにあけることができる。According to this excimer laser processing, compared to YAG or CO2, it is possible to neatly drill fine holes with a diameter of several tens of micrometers in the workpiece, ie, a ceramic insulating substrate such as alumina, without heating it.
［発明の効果コ
以上詳述したことから明らかなように、本発明によれば
、薄膜形成法を用いる事により接着剤無しで基準電極層
及び制御電極層を形成することができるので、トナーが
アパチャーに付着堆積してそこに詰まることがなくなり
、装置の記録不能を起こすことがなくなる。更に、アパ
チャー電極が変形することがないため、アパチャー電極
か高電圧の印加されであるトナー担持体や対向電極に接
触することがなく、異常放電を起こしてその電気ノイズ
によって装置を誤動作させることもなくなるアパチャー
電極及びその製造方法を提供できるという産業上著しい
効果を奏する。[Effects of the Invention] As is clear from the detailed description above, according to the present invention, the reference electrode layer and the control electrode layer can be formed without an adhesive by using the thin film formation method, so that the toner can be There is no longer any possibility that the apertures will be deposited and clogged, causing the device to be unable to record. Furthermore, since the aperture electrode does not deform, the aperture electrode does not come into contact with the toner carrier or counter electrode to which high voltage is applied, which may cause abnormal discharge and cause the device to malfunction due to electrical noise. This has an industrially significant effect in that it can provide an aperture electrode that does not disappear and a method for manufacturing the same.
第１図と第２図は本発明を具体化した実施例を示すもの
で、第１図はアパチャー電極の斜視図、第２図はアパチ
ャー電極の製造方法の工程順序を示す図である。
図中、１はアパチャー電極、２はアパチャー３はセラミ
クス絶縁基板、４は基準電極層、５は制御電極層、６．
７は銅膜、８は制御電極層パターン、９は穴（アパチャ
ー）である。1 and 2 show an embodiment embodying the present invention. FIG. 1 is a perspective view of an aperture electrode, and FIG. 2 is a diagram showing the sequence of steps in a method for manufacturing an aperture electrode. In the figure, 1 is an aperture electrode, 2 is an aperture 3 is a ceramic insulating substrate, 4 is a reference electrode layer, 5 is a control electrode layer, 6.
7 is a copper film, 8 is a control electrode layer pattern, and 9 is a hole (aperture).
Claims (1)
設けられた基準電極膜と、 前記セラミクス基板の他方の面に薄膜形成法によって独
立に設けられた多数の制御電極膜と、該制御電極膜各々
の略中心に設けられ、且つ前記セラミクス絶縁基板を貫
通しているアパチャーと から構成されていることを特徴とするアパチャー電極。 ２、極薄のセラミクス絶縁基板の一方の面にスパッタリ
ングなどの薄膜形成法により金属膜を形成する基準電極
膜形成工程と、 前記セラミクス絶縁基板の他方の面に薄膜形成法などに
よって独立した多数の金属膜のパターンを形成する制御
電極膜パターン形成工程と、これらの工程の後、両面に
金属膜の形成された前記セラミクス絶縁基板を貫くよう
に、前記制御電極膜パターンの独立した多数の金属膜各
々の略中心にアパチャーを設けるアパチャー形成工程と
から成るアパチャー電極の製造方法。[Scope of Claims] 1. An extremely thin ceramic insulating substrate; a reference electrode film provided on one surface of the ceramic insulating substrate by a thin film forming method; and an independent reference electrode film provided on the other surface of the ceramic substrate by a thin film forming method. 1. An aperture electrode comprising a large number of control electrode films provided on the substrate, and an aperture provided substantially at the center of each control electrode film and penetrating the ceramic insulating substrate. 2. A reference electrode film forming step in which a metal film is formed on one surface of an ultra-thin ceramic insulating substrate by a thin film forming method such as sputtering, and a large number of independent metal films are formed on the other surface of the ceramic insulating substrate by a thin film forming method, etc. A control electrode film pattern forming step of forming a metal film pattern, and after these steps, a large number of independent metal films of the control electrode film pattern are formed so as to penetrate through the ceramic insulating substrate on which metal films are formed on both sides. A method for manufacturing an aperture electrode comprising the step of forming an aperture approximately at the center of each aperture.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5335190A JP3010672B2 (en) | 1990-03-05 | 1990-03-05 | Aperture electrode and method of manufacturing the same |
| US08/008,567 US5256246A (en) | 1990-03-05 | 1993-01-22 | Method for manufacturing aperture electrode for controlling toner supply operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5335190A JP3010672B2 (en) | 1990-03-05 | 1990-03-05 | Aperture electrode and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03254949A true JPH03254949A (en) | 1991-11-13 |
| JP3010672B2 JP3010672B2 (en) | 2000-02-21 |
Family
ID=12940362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5335190A Expired - Fee Related JP3010672B2 (en) | 1990-03-05 | 1990-03-05 | Aperture electrode and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3010672B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6336712B1 (en) * | 1993-05-14 | 2002-01-08 | Brother Kogyo Kabushiki Kaisha | Image formation apparatus having a toner flow control member with a protection layer |
-
1990
- 1990-03-05 JP JP5335190A patent/JP3010672B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6336712B1 (en) * | 1993-05-14 | 2002-01-08 | Brother Kogyo Kabushiki Kaisha | Image formation apparatus having a toner flow control member with a protection layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3010672B2 (en) | 2000-02-21 |
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