JPH03238808A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve device characteristics while coping with manufacture of a variety of devices by patterning the same layer using a plurality of exposure systems and lithography systems. CONSTITUTION:A semiconductor chip is designed to divide its chip into functional cells, which form standard cell sections 1, 3, 4 and 5, and a custom cell section 2. The standard cell sections are patterned quickly through exposure with an i-line stepper; the custom cell section 2 covered with the same resist is patterned by lithography using an Ar laser (3638Angstrom harmonic). In other words, the different sections on the same layer are individually subjected to lithographic processes using light sources capable of emitting light to which the same resist layer is sensitive. According to this method, it is possible to improve characteristics without a decrease in throughput and to provide custom devices so that many kinds of devices in small volume can be manufactured efficiently.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention has been made regarding a manufacturing method for semiconductors, display devices, etc., and is achieved by using a plurality of exposure devices and drawing devices in the pattern forming process of the same layer. This makes it possible to improve characteristics and respond to diversification.

[Prior art] In the pattern forming process of conventional semiconductor devices, masks,
It is common to use an exposure device that uses a reticle, etc., and a writing device that uses an electron beam, etc. has a low throughput, so it is used for prototyping ultra-fine patterns and devices in a very small amount, and both techniques are used at the same time. There was no.

Further, since conventional exposure equipment and drawing equipment each use resists with different photosensitive areas, it is impractical to use the same layer overlappingly.

[Problems to be solved by the invention] As the scope of use of semiconductor devices and display devices expands, demands for improved characteristics and customization of devices increase, and element dimensions become finer (the entire pattern becomes finer). ) and smaller lots, and when conventional exposure equipment is used, there are limits to resolution and a significant drop in equipment efficiency.
When the B lithography system was used, the problem was that the throughput was low because the entire wafer surface was scribed.

[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and involves dividing exposure and drawing of the same layer using an exposure device and a drawing device having light sources that are sensitive to the same resist. The present invention is intended to improve characteristics and customize the device without reducing throughput.The details of the present invention will be described below with reference to Examples.

[Example 1 (Example 1)] FIG. 1 shows a chip layout diagram of a semiconductor device using the manufacturing method according to Example 1 of the present invention.

In the figure, 2 shows a mask ROM which is a custom part of the chip.
There is a standard cell part.

When designing a semiconductor device, the inside of the chip is divided into cells for each function and divided into a standard pattern part (1=3#4#5) and a customized part (2), and in the pattern creation process, one line is used for the standard pattern part. High-speed patterning was performed using an exposure method using a stepper.

Furthermore, using the same resist layer, a customized portion (2) was drawn using a laser drawing device using harmonics (3638X) of an Ar laser.

In this example, a positive resist corresponding to one line was used as the resist.

Since the Ar laser beam of 3638' irradiates well the i-line compatible positive resist, it was possible to pattern it at a relatively high speed.

For alignment between the patterned part by the stepper and the patterned part by the drawing device, it is possible to use the alignment pattern of the underlying substrate, or it is possible to perform multiple exposure by developing after exposure by the stepper and aligning using that pattern. there were.

(Example 2) FIG. 2 shows an outline diagram of an electrode pattern of a liquid crystal display device manufactured using the manufacturing method according to Example 2 of the present invention.

In this example, the pixel control transistor section and the peripheral circuit section shown in (7) are patterned using a batch transfer exposure device using a resist for g and i lines, and then a patterning section (8) for dividing each pixel is formed. Drawing was performed using an Ar laser drawing device.

In liquid crystal displays, as the panel area becomes larger, the gap between each pixel tends to narrow in order to improve the film stability, so large-area exposure equipment is required, and exposure patterns are becoming increasingly finer. .

In this embodiment, the peripheral circuit section and the control transistor section are
While it is around 0μ, patterning for pixel division needs to be around 2μ.

An exposure apparatus that satisfies both requirements at the same time has been unrealistic from a cost and throughput standpoint.

[Effects of the invention] By using the method described in the above embodiment to pattern the same layer using different exposure devices or drawing devices according to the characteristics required by the pattern, it is possible to create a highly efficient device without sacrificing throughput. I was able to create it.

In Example 1, efficient production of a wide variety of products in small quantities was achieved, and in Example 2, efficient coexistence of large-area turns and fine patterns was achieved.

[Brief explanation of drawings]

FIG. 1 is a cell layout diagram of an engineered C chip according to a first embodiment of the present invention. FIG. 2 is an electrode pattern diagram of a liquid crystal display device according to a second embodiment of the present invention. 1...Peripheral circuit section 2...ROM section 3...A/D conversion circuit section 4...
......CPU section 5......Engineer 10 section 6...Pixel electrode section 7...Pixel control transistor section 8...・
・・・・・・Pixel dividing line

Claims (1)

[Claims] In semiconductor devices, display devices, etc., the pattern formation process for the same layer can be performed using multiple exposure and drawing devices, such as using both an exposure device using a mask and a drawing device controlled by CAD data, etc. A method for manufacturing a featured semiconductor device.