JPH0323651Y2 - - Google Patents
Info
- Publication number
- JPH0323651Y2 JPH0323651Y2 JP11843886U JP11843886U JPH0323651Y2 JP H0323651 Y2 JPH0323651 Y2 JP H0323651Y2 JP 11843886 U JP11843886 U JP 11843886U JP 11843886 U JP11843886 U JP 11843886U JP H0323651 Y2 JPH0323651 Y2 JP H0323651Y2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- sample holder
- lead wire
- semiconductor
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000001073 sample cooling Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 239000010979 ruby Substances 0.000 claims description 4
- 229910001750 ruby Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11843886U JPH0323651Y2 (ko) | 1986-08-01 | 1986-08-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11843886U JPH0323651Y2 (ko) | 1986-08-01 | 1986-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6325456U JPS6325456U (ko) | 1988-02-19 |
JPH0323651Y2 true JPH0323651Y2 (ko) | 1991-05-23 |
Family
ID=31004889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11843886U Expired JPH0323651Y2 (ko) | 1986-08-01 | 1986-08-01 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0323651Y2 (ko) |
-
1986
- 1986-08-01 JP JP11843886U patent/JPH0323651Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6325456U (ko) | 1988-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100315605B1 (ko) | 고양된 온도에서의 반도체 소자의 급속테스팅장치및방법 | |
WO2017038293A1 (ja) | 回路検査方法および試料検査装置 | |
Tweet | Properties of grain boundaries in gold-doped germanium | |
JPH0323651Y2 (ko) | ||
US4962294A (en) | Method and apparatus for causing an open circuit in a conductive line | |
JPH0697246A (ja) | 低温における半導体材料の性質を試験する装置および方法 | |
Green et al. | Measurement of thermal diffusivity of semiconductors by Ångström's method | |
Strunk et al. | Nonmonotonic superconducting transitions in mesoscopic Al structures induced by radio-frequency radiation | |
Kiss et al. | Low temperature scanning laser microscopy of YBCO coated IBAD tapes | |
Goetz et al. | The thermoanalysis of metal single crystals and a new thermoelectric effect of bismuth crystals grown in magnetic fields | |
Raven | Charge transport and conductance oscillations in gold island films | |
Reshamwala et al. | A coaxial DTA cell for the study of liquid crystalline transitions at elevated pressures | |
KR20030075746A (ko) | 탐침형 깊은 준위 과도 전기 용량 분광기 | |
JP2020126039A (ja) | Hts超伝導体の電気特性を評価する方法 | |
Stuckes | Measurement of thermal conductivity of semiconductors at high temperatures | |
Trakalo et al. | Apparatus for measuring Seebeck coefficients of high‐resistance semiconducting films | |
Vila et al. | Thermally induced EMF in unirradiated MI cables | |
JP3610000B2 (ja) | 熱電気測定装置の電極押さえユニット及び試料支持装置並びに熱電気測定装置 | |
JP2000252331A (ja) | 電気特性評価装置 | |
Eichele et al. | Low-temperature scanning electron microscopy of superconducting microbridges | |
Daibo et al. | Examination of relationship between resistivity and photocurrent induced magnetic field in silicon wafers using laser SQUID | |
JPH02253172A (ja) | 物性測定装置 | |
Wen et al. | Imaging spatial variations in resistance along electrical conductors | |
JPH06331308A (ja) | 走査トンネル顕微鏡用試料冷却保持装置 | |
SU767870A1 (ru) | Устройство дл измерени эдс поперечного эффекта нернста-этингсгаузена в полупроводниковых материалах |